4758

SHD115513
SHD115513B
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 4758, REV. F
HERMETIC SCHOTTKY RECTIFIER
Very Low Forward Voltage Drop
Features:






Soft Reverse Recovery at Low and High Temperature
Very Low Forward Voltage Drop
Low Power Loss, High Efficiency
High Surge Capacity
Guard Ring for Enhanced Durability and Long Term Reliability
Guaranteed Reverse Avalanche Characteristics
Maximum Ratings
Characteristics
Peak Inverse Voltage
Max. Average Forward Current
Symbol
VRWM
IF(AV)
Max. Average Forward Current
IF(AV)
Max. Peak One Cycle NonRepetitive Surge Current
Non-Repetitive Avalanche Energy
IFSM
Repetitive Avalanche Current
IAR
Maximum Thermal Resistance
(per leg)
RJC
Max. Junction Temperature
Max. Storage Temperature
TJ
Tstg
EAS
Condition
50% duty cycle, rectangular
wave form (Single)
50% duty cycle, rectangular
wave form (Common Cathode)
8.3 ms, half Sine wave
(per leg)
TJ = 25 C, IAS = 3.0 A,
L = 4.4 mH (per leg)
IAS decay linearly to 0 in 1 s
 limited by TJ max VA=1.5VR
DC operation
-
Max.
60
60
Units
V
A
60
A
860
A
20
mJ
3.0
A
0.7
C/W
-65 to +175
-65 to +175
C
C
Max.
0.70
0.67
6
Units
V
V
mA
420
mA
2400
pF
Electrical Characteristics
Characteristics
Max. Forward Voltage Drop
(per leg)
Max. Reverse Current
Symbol
VF1
VF2
IR1
(per leg)
IR2
Max. Junction Capacitance
(per leg)
CT
Condition
@ 60A, Pulse, TJ = 25 C
@ 60A, Pulse, TJ = 125 C
@VR = 60V, Pulse,
TJ = 25 C
@VR = 60V, Pulse,
TJ = 125 C
@VR = 5V, TC = 25 C
fSIG = 1MHz,
VSIG = 50mV (p-p)
©2006 Sensitron Semiconductor  221 WEST INDUSTRY COURT  DEER PARK, NY 11729-4681
PHONE (631) 586-7600 FAX (631) 242-9798  www.sensitron.com  [email protected]
SHD115513
SHD115513B
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 4758, REV. F
MECHANICAL DIMENSIONS: In Inches / mm
.465±.020
(11.8±.508)
.315±.010
(8.00±.254)
.315±.010
(8.00±.254)
.315±.010
(8.00±.254)
.150±.010
(3.81±.254)
.315±.010
(8.00±.254)
.015±.005
(.381±.127)
Copper Anode
.020±.005 R
(.508±.127 )
.090 (2.29) Max
Alumina Ring
.075 (1.91) Max
Moly Lid
.015±.002
(.381±.051)
Moly Base
(Cathode)
Alumina Ring
.060±.010
(1.52±.254)
Moly Base
SHD-2
SHD-2B
Note: The Vf curves shown are for the unpackaged die only.
Typical Forward Characteristics
Typical Reverse Characteristics
3
2
10
Instantaneous Reverse Current - I R (mA)
1
10
125 °C
2
10
125 °C
1
10
100 °C
75 °C
0
10
50 °C
-1
10
25 °C
-2
10
0
25 °C
0
10
10
20
30
40
Reverse Voltage - V R (V)
50
60
Typical Junction Capacitance
Junction Capacitance - CT (pF)
Instantaneous Forward Current - I F (A)
10
-1
10
0.0
0.2
0.4
0.6
Forw ard Voltage Drop - V F (V)
0.8
2500
2300
2100
1900
1700
1500
1300
1100
900
700
500
0
10
20
30
40
Reverse Voltage - V R (V)
50
60
©2006 Sensitron Semiconductor  221 WEST INDUSTRY COURT  DEER PARK, NY 11729-4681
PHONE (631) 586-7600 FAX (631) 242-9798  www.sensitron.com  [email protected]
SENSITRON
SEMICONDUCTOR
SHD115513
SHD115513B
TECHNICAL DATA
DATA SHEET 4758, REV. F
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of
the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement .
3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation
of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or
any other problems that may result from applications of information, products or circuits described in the datasheets.
4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from use
at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of
Sensitron Semiconductor.
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When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations.
©2006 Sensitron Semiconductor  221 WEST INDUSTRY COURT  DEER PARK, NY 11729-4681
PHONE (631) 586-7600 FAX (631) 242-9798  www.sensitron.com  [email protected]