SHD118513 SHD118513A SHD118513B SENSITRON SEMICONDUCTOR TECHNICAL DATA DATASHEET 4765, REV. D HERMETIC SCHOTTKY RECTIFIER Very Low Forward Voltage Drop Features: Soft Reverse Recovery at Low and High Temperature Very Low Forward Voltage Drop Low Power Loss, High Efficiency High Surge Capacity Guard Ring for Enhanced Durability and Long Term Reliability Guaranteed Reverse Avalanche Characteristics Maximum Ratings Characteristics Peak Inverse Voltage Max. Average Forward Current Symbol VRWM IF(AV) Max. Average Forward Current IF(AV) Max. Peak One Cycle NonRepetitive Surge Current Non-Repetitive Avalanche Energy IFSM Repetitive Avalanche Current IAR Maximum Thermal Resistance (per leg) RJC DC operation Max. Junction Temperature Max. Storage Temperature TJ Tstg - EAS Condition 50% duty cycle, rectangular wave form (Single) 50% duty cycle, rectangular wave form (Common Cathode) 8.3 ms, half Sine wave (per leg) TJ = 25 C, IAS = 3.0 A, L = 4.4 mH (per leg) IAS decay linearly to 0 in 1 s limited by TJ max VA=1.5VR Max. 60 60 Units V A 120 A 500 A 20 mJ 3.0 A 1.20 C/W -65 to +175 -65 to +175 C C Max. 0.70 0.67 6 Units V V mA 420 mA 2400 pF Electrical Characteristics Characteristics Max. Forward Voltage Drop (per leg) Max. Reverse Current Symbol VF1 VF2 IR1 (per leg) IR2 Max. Junction Capacitance (per leg) CT Condition @ 60A, Pulse, TJ = 25 C @ 60A, Pulse, TJ = 125 C @VR = 60V, Pulse, TJ = 25 C @VR = 60V, Pulse, TJ = 125 C @VR = 5V, TC = 25 C fSIG = 1MHz, VSIG = 50mV (p-p) ©2014 Sensitron Semiconductor 221 WEST INDUSTRY COURT DEER PARK, NY 11729-4681 PHONE (631) 586-7600 FAX (631) 242-9798 www.sensitron.com [email protected] SHD118513 SHD118513A SHD118513B SENSITRON SEMICONDUCTOR TECHNICAL DATA DATASHEET 4765, REV. D MECHANICAL DIMENSIONS: In Inches / mm .520±.020 SHD-5B (13.2±.508) .510±.020 SHD-5A (12.9±.508) .370±.010 (9.40±.254) .370±.010 (9.40±.254) .370±.010 (9.40±.254) 2 .125±.010 (3.17±.254) .030±.010 (.762±.254) .090±.010 (2.29±.254) 2 2 .610±.010 (15.5±.254) .030±.010 (.762±.254) .030±.010 (.762±.254) 3 .320±.010 (8.13±.254) .610±.010 (15.5±.254) .320±.010 (8.13 ±.254) .610±.010 (15.5±.254) 3 3 .110 (2.80) Max Alumina Ring .110 (2.79) Max Moly Lid Terminal 1 .020±.005 R (.508±.127 ) Copper Terminals .130 (3.30) Max Moly Lid Alumina Ring .020±.005 R (.508±.127 ) Alumina Ring .020±.002 (.508±.051) Moly Base Terminal 1 .060±.010 (1.52±.254) .060±.010 (1.52±.254) 1 2 3 PINOUT TABLE DEVICE TYPE PIN 1 DUAL RECTIFIER, COMMON CATHODE (P) COMMON CATHODE Note: The Vf curves shown are for the SD200SA60 unpackaged die only. Typical Forw ard Characteristics PIN 3 ANODE Typical Rev erse Characteristics 10 (mA) R Instantaneous Reverse Current - I (A) 1 10 125 °C 2 10 125 °C 1 10 100 °C 75 °C 0 10 50 °C -1 10 25 °C -2 10 0 25 °C 0 10 10 20 30 40 Reverse Voltage - V R (V) 50 60 Typical Junction Capacitance Junction Capacitance - C T (pF) F Instantaneous Forward Current - I PIN 2 ANODE 3 2 10 -1 10 0.0 0.2 0.4 0.6 Forward Voltage Drop - V F (V) 0.8 2500 2300 2100 1900 1700 1500 1300 1100 900 700 500 0 .015±.002 (.381±.051) Moly Base Terminal 1 10 20 30 40 Reverse Voltage - V R (V) 50 60 ©2014 Sensitron Semiconductor 221 WEST INDUSTRY COURT DEER PARK, NY 11729-4681 PHONE (631) 586-7600 FAX (631) 242-9798 www.sensitron.com [email protected] SENSITRON SEMICONDUCTOR SHD118513 SHD118513A SHD118513B TECHNICAL DATA DATASHEET 4765, REV. D DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of Sensitron Semiconductor. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations. ©2014 Sensitron Semiconductor 221 WEST INDUSTRY COURT DEER PARK, NY 11729-4681 PHONE (631) 586-7600 FAX (631) 242-9798 www.sensitron.com [email protected]