4555

SENSITRON
SEMICONDUCTOR
SHD115522
SHD115522B
TECHNICAL DATA
DATA SHEET 4555, REV. B
Formerly part number SHD1152/B
HERMETIC SCHOTTKY RECTIFIER
Very Low Forward Voltage Drop
Features:
Soft Reverse Recovery at Low and High Temperature
Very Low Forward Voltage Drop
Low Power Loss, High Efficiency
High Surge Capacity
Guard Ring for Enhanced Durability and Long Term Reliability
Guaranteed Reverse Avalanche Characteristics
Maximum Ratings
Characteristics
Peak Inverse Voltage
Max. Average Forward Current
Symbol
VRWM
IF(AV)
Max. Average Forward Current
IF(AV)
Max. Peak One Cycle NonRepetitive Surge Current
Non-Repetitive Avalanche Energy
IFSM
Repetitive Avalanche Current
IAR
EAS
Maximum Thermal Resistance
R
Max. Junction Temperature
Max. Storage Temperature
TJ
Tstg
JC
Condition
50% duty cycle, rectangular
wave form (Single)
50% duty cycle, rectangular
wave form (Common Cathode)
8.3 ms, half Sine wave
(per leg)
TJ = 25 C, IAS = 3.0 A,
L = 4.4 mH (per leg)
IAS decay linearly to 0 in 1 s
limited by TJ max VA=1.5VR
DC operation
-
Max.
45
60
Units
V
A
120
A
860
A
20
mJ
3.0
A
0.7
C/W
-65 to +175
-65 to +175
C
C
Electrical Characteristics
Characteristics
Max. Forward Voltage Drop
(per leg)
Max. Reverse Current
Symbol
VF1
VF2
IR1
(per leg)
IR2
Max. Junction Capacitance
(per leg)
CT
Condition
@ 60A, Pulse, TJ = 25 C
@ 60A, Pulse, TJ = 125 C
@VR = 45V, Pulse,
TJ = 25 C
@VR = 45V, Pulse,
TJ = 125 C
@VR = 5V, TC = 25 C
fSIG = 1MHz,
VSIG = 50mV (p-p)
Max.
0.66
0.59
1.2
Units
V
V
mA
45
mA
2400
pF
© 2012 Sensitron Semiconductor 221 WEST INDUSTRY COURT DEER PARK, NY 11729-4681
PHONE (631) 586-7600 FAX (631) 242-9798 www.sensitron.com [email protected]
SENSITRON
SEMICONDUCTOR
SHD115522
SHD115522B
TECHNICAL DATA
DATA SHEET 4555, REV. B
MECHANICAL DIMENSIONS: In Inches / mm
.465±.020
(11.8±.508)
.315±.010
(8.00±.254)
.315±.010
(8.00±.254)
.315±.010
(8.00±.254)
.150±.010
(3.81±.254)
.315±.010
(8.00±.254)
.015±.005
(.381±.127)
Copper Anode
.090 (2.29) Max
.075 (1.91) Max
Moly Lid
Alumina Ring
Moly Base
(Cathode)
Alumina Ring
Moly Base
SHD-2
.020±.005 R
(.508±.127 )
.015±.002
(.381±.051)
.060±.010
(1.52±.254)
SHD-2B
© 2012 Sensitron Semiconductor 221 WEST INDUSTRY COURT DEER PARK, NY 11729-4681
PHONE (631) 586-7600 FAX (631) 242-9798 www.sensitron.com [email protected]
SHD115522
SHD115522B
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 4555, REV. B
Note: The Vf curves shown are for the unpackaged die only.
Typical Forward Characteristics
Typical Reverse Characteristics
3
2
10
Instantaneous Reverse Current - IR (mA)
10
125 °C
150 °C
1
10
125 °C
100 °C
100
75 °C
10-1
50 °C
10-2
25 °C
10-3
0
101
0.2
0.3
0.4
0.5
0.6
0.7
Forward Vol tage Drop -FV(V)
10
20
30
Reverse Vol tage - R
V (V)
40
50
Typical Junction Capacitance
25 °C
0.8
Junction Capacitance - CT (pF)
Instantaneous Forward Current - IF (A)
175 °C
175 °C
102
2500
2000
1500
1000
500
0
10
20
30
Reverse Vol tage - R
V (V)
40
50
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characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the
datasheet(s).
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equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’
fail-safe precautions or other arrangement .
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the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any
other problems that may result from applications of information, products or circuits described in the datasheets.
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a value exceeding the absolute maximum rating.
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© 2012 Sensitron Semiconductor 221 WEST INDUSTRY COURT DEER PARK, NY 11729-4681
PHONE (631) 586-7600 FAX (631) 242-9798 www.sensitron.com [email protected]