SENSITRON SEMICONDUCTOR SHD118512 SHD118512A SHD118512B TECHNICAL DATA DATA SHEET 4601, REV. A HERMETIC SCHOTTKY RECTIFIER Very Low Forward Voltage Drop Features: Soft Reverse Recovery at Low and High Temperature Very Low Forward Voltage Drop Low Power Loss, High Efficiency High Surge Capacity Guard Ring for Enhanced Durability and Long Term Reliability Guaranteed Reverse Avalanche Characteristics Maximum Ratings Characteristics Peak Inverse Voltage Max. Average Forward Current Symbol VRWM IF(AV) Max. Average Forward Current IF(AV) Max. Peak One Cycle NonRepetitive Surge Current Non-Repetitive Avalanche Energy IFSM Repetitive Avalanche Current IAR EAS Maximum Thermal Resistance R Max. Junction Temperature Max. Storage Temperature TJ Tstg JC Condition 50% duty cycle, rectangular wave form (Single) 50% duty cycle, rectangular wave form (Common Cathode) 8.3 ms, half Sine wave (per leg) TJ = 25 C, IAS = 3.0 A, L = 4.4 mH (per leg) IAS decay linearly to 0 in 1 s limited by TJ max VA=1.5VR DC operation Max. 45 60 Units V A 120 A 860 A 20 mJ 3.0 A 7.07 C/W - -65 to +150 -65 to +150 C C Electrical Characteristics Characteristics Max. Forward Voltage Drop (per leg) Max. Reverse Current Symbol VF1 VF2 IR1 (per leg) IR2 Max. Junction Capacitance (per leg) CT Condition @ 60A, Pulse, TJ = 25 C @ 60A, Pulse, TJ = 125 C @VR = 45V, Pulse, TJ = 25 C @VR = 45V, Pulse, TJ = 125 C @VR = 5V, TC = 25 C fSIG = 1MHz, VSIG = 50mV (p-p) Max. 0.60 0.57 4.5 Units V V mA 210 mA 2400 pF ©2012 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 www.sensitron.com [email protected] SHD118512 SHD118512A SHD118512B SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4601, REV. A MECHANICAL DIMENSIONS: In Inches / mm .520±.020 SHD-5B (13.2±.508) .510±.020 SHD-5A (12.9±.508) .370±.010 (9.40±.254) .370±.010 (9.40±.254) .370±.010 (9.40±.254) 2 .125±.010 (3.17±.254) .030±.010 (.762±.254) .090±.010 (2.29±.254) 2 .610±.010 (15.5±.254) 2 .030±.010 (.762±.254) .030±.010 (.762±.254) 3 .110 (2.80) Max .320±.010 (8.13±.254) .610±.010 (15.5±.254) .320±.010 (8.13 ±.254) .610±.010 (15.5±.254) 3 3 Alumina Ring .110 (2.79) Max Moly Lid Terminal 1 .020±.005 R (.508±.127 ) Copper Terminals .130 (3.30) Max Alumina Ring .060±.010 (1.52±.254) 1 2 3 PINOUT TABLE DEVICE TYPE PIN 1 DUAL RECTIFIER, COMMON CATHODE (P) COMMON CATHODE Note: The Vf curves shown are for the SD200SA45 unpackaged die only. Typical Forward Characteristics PIN 2 ANODE PIN 3 ANODE Typical Reverse Characteristics 103 Instantaneous Reverse Current - I R (mA) 150 °C 101 102 150 °C 125 °C 101 100 °C 100 75 °C 50 °C 10-1 125 °C 25 °C 10-2 0 25 °C 100 Junction Capacitance - C T (pF) Instantaneous Forward Current - I F (A) .015±.002 (.381±.051) Moly Base Terminal 1 .060±.010 (1.52±.254) 102 10-1 0.0 0.2 0.4 0.6 Forward Voltage Drop -FV(V) 0.8 10 20 30 40 Reverse Voltage - RV (V) 50 Typical Junction Capacitance 2500 2300 2100 1900 1700 1500 1300 1100 900 700 500 0 .020±.005 R (.508±.127 ) Alumina Ring .020±.002 (.508±.051) Moly Base Terminal 1 Moly Lid 10 20 30 40 Reverse Voltage - RV (V) 50 ©2012 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 www.sensitron.com [email protected] SENSITRON SEMICONDUCTOR SHD118512 SHD118512A SHD118512B TECHNICAL DATA DATA SHEET 4601, REV. 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