IDB10S60C Data Sheet (514 KB, EN)

IDB10S60C
2nd Generation thinQ!TM SiC Schottky Diode
Features
• Revolutionary semiconductor material - Silicon Carbide
• Switching behavior benchmark
Product Summary
VDC
600
V
Qc
24
nC
IF
10
A
• No reverse recovery/ No forward recovery
• No temperature influence on the switching behavior
• High surge current capability
D2PAK (PG-TO263-3-2)
• Pb-free lead plating; RoHs compliant
• Qualified according to JEDEC1) for target applications
• Breakdown voltage tested at 5mA2)
thinQ! 2G Diode designed for fast switching applications like:
• CCM PFC
• Motor Drives
Type
Package
Marking
Pin 2
Pin 3
IDB10S60C
D2PAK (PG-TO263-3-2)
D10S60C
C
A
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol Conditions
Continuous forward current
IF
T C<135 °C
10
RMS forward current
I F,RMS
f =50 Hz
15
T C=25 °C, t p=10 ms
76
Surge non-repetitive forward current,
I F,SM
sine halfwave
Unit
A
Repetitive peak forward current
I F,RM
T j=150 °C,
T C=100 °C, D =0.1
32
Non-repetitive peak forward current
I F,max
T C=25 °C, t p=10 µs
350
i²t value
∫i 2dt
T C=25 °C, t p=10 ms
29
A2s
Repetitive peak reverse voltage
V RRM
600
V
Diode ruggedness dv/dt
dv/ dt
VR=0…480V
50
V/ns
Power dissipation
P tot
T C=25 °C
83
W
Operating and storage temperature
T j, T stg
-55 ... 175
°C
Rev. 2.3
page 1
2014-10-15
IDB10S60C
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
-
1.8
-
-
62
-
35
-
-
-
260
°C
600
-
-
V
Thermal characteristics
Thermal resistance, junction - case
R thJC
R thJA
Thermal resistance,
junction - ambient
Soldering temperature,
reflowsoldering @ 10sec.
T sold
SMD version, device
on PCB, minimal
Footprint
SMD version, device
on PCB, 6 cm2 cooling
area3)
reflow MSL1
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
DC blocking voltage
V DC
I R=0.14 mA
Diode forward voltage
VF
I F=10 A, T j=25 °C
-
1.5
1.7
I F=10 A, T j=150 °C
-
1.7
2.1
V R=600 V, T j=25 °C
-
1.4
140
V R=600 V, T j=150 °C
-
5
1400
-
24
-
nC
-
-
<10
ns
pF
Reverse current
IR
µA
AC characteristics
Total capacitive charge
Qc
Switching time4)
tc
V R=400 V, I F≤I F,max,
di F/dt =200 A/µs,
T j=150 °C
Total capacitance
C
V R=1 V, f =1 MHz
-
480
-
V R=300 V, f =1 MHz
-
60
-
V R=600 V, f =1 MHz
-
60
-
1)
J-STD20 and JESD22
2)
All devices tested under avalanche conditions, for a time periode of 5ms, at 5mA.
3)
Device on 40mm*40mm*1.5mm epox PCB FR4 with 6cm 2 (one layer, 70µm thick) copper area for drain
connection. PCB is vertikal with out blown air.
4)
tc is the time constant for the capacitive displacement current waveform (independent from T j, ILOAD and
di/dt), different from trr, which is dependent on Tj, ILOAD, di/dt. No reverse recovery time constant trr due to
absence of minority carrier injection.
5)
Only capacative charge occuring, guaranteed by design.
Rev. 2.3
page 2
2014-10-15
IDB10S60C
1 Power dissipation
2 Diode forward current
P tot=f(T C)
I F=f(T C); T j≤175 °C
25
80
20
60
15
IF [A]
Ptot [W]
100
40
10
20
5
0
0
25
50
75
100
125
150
175
200
25
50
75
100
TC [°C]
125
150
175
TC [°C]
3 Typ. forward characteristic
4 Typ. forward characteristic in surge current
I F=f(V F); t p=400 µs
mode
parameter: T j
I F=f(V F); t p=400 µs; parameter: T j
30
120
100 °C
-55 °C
175°C
100
25 °C
150 °C
20
80
IF [A]
IF [A]
175°C
60
25 °C
10
40
100 °C
20
150 °C
-55 °C
0
0
0
1
2
3
4
VF [V]
Rev. 2.3
0
2
4
6
8
VF [V]
page 3
2014-10-15
IDB10S60C
5 Typ. forward power dissipation vs.
6 Typ. reverse current vs. reverse voltage
average forward current
I R=f(V R)
P F,AV=f(I F), T C=100 °C, parameter: D =t p/T
parameter: T j
102
50
0.1
0.5
101
40
1
0.2
100
IR [µA]
PF(AV) [W]
30
20
10-1
10
10-2
175 °C
100 °C
150 °C
-55 °C
25 °C
10-3
0
0
5
10
15
20
100
25
200
300
400
500
600
VR [V]
IF(AV) [A]
7 Transient thermal impedance
8 Typ. capacitance vs. reverse voltage
Z thJC=f(t p)
C =f(V R); T C=25 °C, f =1 MHz
parameter: D =t p/T
101
600
500
100
400
C [pF]
ZthJC [K/W]
0.5
0.2
0.1
10-1
300
200
0.02
0.01
100
single pulse
10-2
0
10-5
10-4
10-3
10-2
10-1
100
tP [s]
Rev. 2.3
10-1
100
101
102
103
VR [V]
page 4
2014-10-15
IDB10S60C
9 Typ. C stored energy
10 Typ. Capacitive charge vs. current slope
E C=f(V R)
Q C=f(di F/dt )5); T j=150 °C; I F≤I F,max
14
25
12
20
15
8
Qc [nC]
Ec [µC]
10
6
10
4
5
2
0
0
0
200
400
600
VR [V]
Rev. 2.3
100
400
700
1000
diF/dt [A/µs]
page 5
2014-10-15
IDB10S60C
PG-TO263-3-2 (D2PAK): Outline
Dimensions in mm/inches
Rev. 2.3
page 6
2014-10-15
IDB10S60C
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2007 Infineon Technologies AG
All Rights Reserved.
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conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
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including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
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on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 2.3
page 7
2014-10-15