IDB06S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery VDC 600 V Qc 15 nC IF 6 A • No temperature influence on the switching behavior • High surge current capability D2PAK (PG-TO263-3-2) • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target applications • Breakdown voltage tested at 5mA2) thinQ! 2G Diode designed for fast switching applications like: • CCM PFC • Motor Drives Type Package Marking Pin 2 Pin 3 IDB06S60C D2PAK (PG-TO263-3-2) D06S60C C A Maximum ratings, at T j=25 °C, unless otherwise specified Value Parameter Symbol Conditions Continuous forward current IF T C<135 °C 6 RMS forward current I F,RMS f =50 Hz 9 T C=25 °C, t p=10 ms 46 Surge non-repetitive forward current, I F,SM sine halfwave Unit A Repetitive peak forward current I F,RM T j=150 °C, T C=100 °C, D =0.1 24 Non-repetitive peak forward current I F,max T C=25 °C, t p=10 µs 210 i ²t value ∫i 2dt T C=25 °C, t p=10 ms 10 A2s Repetitive peak reverse voltage V RRM 600 V Diode ruggedness dv/dt dv/ dt VR=0…480V 50 V/ns Power dissipation P tot T C=25 °C 52 W Operating and storage temperature T j, T stg -55 ... 175 °C Rev. 2.3 page 1 2014-10-15 IDB06S60C Parameter Values Symbol Conditions Unit min. typ. max. - - 2.9 - - 62 - 35 - - - 260 °C 600 - - V Thermal characteristics Thermal resistance, junction - case R thJC R thJA Thermal resistance, junction - ambient Soldering temperature, reflowsoldering @ 10sec T sold SMD version, device on PCB, minimal Footprint SMD version, device on PCB, 6 cm2 cooling area3) reflow MSL1 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics DC blocking voltage V DC I R=0.08 mA Diode forward voltage VF I F=6 A, T j=25 °C - 1.5 1.7 I F=6 A, T j=150 °C - 1.7 2.1 V R=600 V, T j=25 °C - 0.7 80 V R=600 V, T j=150 °C - 3 800 - 15 - nC - - <10 ns pF Reverse current IR µA AC characteristics Total capacitive charge Qc Switching time4) tc V R=400 V, I F≤I F,max, di F/dt =200 A/µs, T j=150 °C Total capacitance C V R=1 V, f =1 MHz - 280 - V R=300 V, f =1 MHz - 35 - V R=600 V, f =1 MHz - 35 - 1) J-STD20 and JESD22 2) All devices tested under avalanche conditions, for a time periode of 5ms at 5mA. 3) Device on 40mm*40mm*1.5mm epox PCB FR4 with 6cm 2 (one layer, 70µm thick) copper area for drain connection. PCB is vertikal with out blown air. 4) t c is the time constant for the capacitive displacement current waveform (independent from T j, ILOAD and di/dt), different from trr, which is dependent on Tj, ILOAD, di/dt. No reverse recovery time constant trr due to absence of minority carrier injection. 5) Only capacitive charge occuring, guaranteed by design. Rev. 2.3 page 2 2014-10-15 IDB06S60C 1 Power dissipation 2 Diode forward current P tot=f(T C) I F=f(T C); T j≤175 °C 16 60 14 50 12 40 IF [A] Ptot [W] 10 30 8 6 20 4 10 2 0 0 25 50 75 100 125 150 175 25 200 50 75 TC [°C] 100 125 150 175 TC [°C] 3 Typ. forward characteristic 4 Typ. forward characteristic in surge current I F=f(V F); t p=400 µs mode parameter: T j I F=f(V F); t p=400 µs; parameter Tj 70 18 100 °C 175 °C 175 °C 16 60 25 °C 150 °C 14 -55 °C 50 12 40 25 °C IF [A] IF [A] 10 8 30 100 °C 6 20 150 °C 4 10 2 -55 °C 0 0 0 1 2 3 4 VF [V] Rev. 2.3 0 2 4 6 8 VF [V] page 3 2014-10-15 IDB06S60C 5 Typ. forward power dissipation vs. 6 Typ. reverse current vs. reverse voltage average forward current I R=f(V R) P F,AV=f(I F), T C=100 °C, parameter: D =t p/T parameter: T j 101 30 0.1 1 25 100 0.2 20 IR [µA] PF(AV) [W] 0.5 15 10-1 175 °C 10 100 °C 150 °C 10-2 25 °C 5 -55 °C 10-3 0 0 5 10 100 15 200 IF(AV) [A] 300 400 500 600 VR [V] 7 Transient thermal impedance 8 Typ. capacitance vs. reverse voltage Z thJC=f(t p) C =f(V R); T C=25 °C, f =1 MHz parameter: D =t p/T 101 400 300 0.5 100 C [pF] ZthJC [K/W] 0.2 0.1 0.05 200 0.02 10-1 0.01 100 single pulse 10-2 0 10-5 10-4 10-3 10-2 10-1 tP [s] Rev. 2.3 10-1 100 101 102 103 VR [V] page 4 2014-10-15 IDB06S60C 9 Typ. C stored energy 10 Typ. capacitance charge vs. current slope E C=f(V R) Q C=f(di F/dt )5); T j=150 °C; I F≤I F,max 8 20 7 6 15 Qc [nC] Ec [µC] 5 4 10 3 2 5 1 0 0 0 200 400 600 VR [V] Rev. 2.3 100 400 700 1000 diF/dt [A/µs] page 5 2014-10-15 IDB06S60C PG-TO263-3-2 (D2Pak): Outline Dimensions in mm/inches Rev. 2.3 page 6 2014-10-15 IDB06S60C Published by Infineon Technologies AG 81726 Munich, Germany © 2007 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.3 page 7 2014-10-15