IDH10SG60C Data Sheet (541 KB, EN)

IDH10SG60C
3rd Generation thinQ!TM SiC Schottky Diode
Features
Product Summary
• Revolutionary semiconductor material - Silicon Carbide
VDC
600
V
• No reverse recovery / No forward recovery
QC
16
nC
• Temperature independent switching behavior
IF; TC< 130 °C
10
A
• Switching behavior benchmark
• High surge current capability
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target applications
• Breakdown voltage tested at 20mA2)
• Optimized for high temperature operation
• Lowest Figure of Merit QC/IF
thinQ! 3G Diode designed for fast switching applications like:
• SMPS e.g.; CCM PFC
• Motor Drives; Solar Applications; UPS
Type
Package
Marking
Pin 1
Pin 2
IDH10SG60C
PG-TO220-2
D10G60C
C
A
Maximum ratings
Parameter
Symbol Conditions
Continuous forward current
IF
Value
T C<130 °C
10
Surge non-repetitive forward current, I F,SM
sine halfwave
T C=25 °C, t p=10 ms
51
T C=150 °C, t p=10 ms
44
I F,max
T C=25 °C, t p=10 µs
410
∫i 2dt
T C=25 °C, t p=10 ms
13
T C=150 °C, t p=10 ms
10
Non-repetitive peak forward current
Unit
A
A2s
i ²t value
Repetitive peak reverse voltage
V RRM
T j=25 °C
600
V
Diode dv/dt ruggedness
dv/ dt
VR= 0….480 V
50
V/ns
Power dissipation
P tot
T C=25 °C
120
W
Operating and storage temperature
T j, T stg
-55 ... 175
°C
Soldering temperature,
wavesoldering only allowed at leads
T sold
Mounting torque
Rev. 2.4
1.6mm (0.063 in.)
from case for 10s
260
M3 and M3.5 screws
60
page 1
Ncm
2012-12-12
IDH10SG60C
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
-
1.25
-
-
62
600
-
-
Thermal characteristics
Thermal resistance, junction - case
R thJC
Thermal resistance,
junction - ambient
R thJA
Thermal resistance,
junction- ambient,
leaded
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
DC blocking voltage
V DC
I R=0.05 mA, T j=25 °C
Diode forward voltage
VF
I F=10 A, T j=25 °C
-
1.8
2.1
I F=10 A, T j=150 °C
-
2.2
-
V R=600 V, T j=25 °C
-
0.8
90
V R=600 V, T j=150 °C
-
3.3
860
-
16
-
nC
-
-
<10
ns
pF
Reverse current
IR
V
µA
AC characteristics
Total capacitive charge
Qc
Switching time3)
tc
V R=400 V,I F≤I F,max,
di F/dt =200 A/µs,
T j=150 °C
Total capacitance
C
V R=1 V, f =1 MHz
-
290
-
V R=300 V, f =1 MHz
-
40
-
V R=600 V, f =1 MHz
-
40
-
1)
J-STD20 and JESD22
2)
All devices tested under avalanche conditions, for a time periode of 10ms, at 20mA.
3)
tc is the time constant for the capacitive displacement current waveform (independent from T j, ILOAD and
di/dt), different from trr which is dependent on Tj, ILOAD and di/dt. No reverse recovery time constant trr due
to absence of minority carrier injection.
4)
Under worst case Zth conditions.
5)
Only capacitive charge occuring, guaranteed by design.
Rev. 2.4
page 2
2012-12-12
IDH10SG60C
1 Power dissipation
2 Diode forward current
P tot=f(T C); parameter: RthJC(max)
I F=f(T C)4); T j≤175 °C; parameter: D = t p/T
120
80
70
0.1
100
60
80
IF [A]
Ptot [W]
50
60
40
0.3
30
0.5
40
0.7
1
20
20
10
0
25
50
75
100
125
150
0
175
25
50
75
TC [°C]
100
125
150
175
TC [°C]
3 Typ. forward characteristic
4 Typ. forward characteristic in surge current
mode
I F=f(VF); t p=400 µs; parameter:T j
I F=f(VF); t p=400 µs; parameter: T j
20
80
-55 °C
25 °C
100 °C
15
60
150 °C
IF [A]
IF [A]
-55 °C
10
175 °C
40
25 °C
100 °C
5
20
150 °C
175 °C
0
0
0
1
2
3
4
VF[V]
Rev. 2.4
0
2
4
6
8
VF [V]
page 3
2012-12-12
IDH10SG60C
5 Typ. capacitance charge vs. current slope
6 Typ. reverse current vs. reverse voltage
5)
Q C=f(di F/dt ) ; I F≤I F,max
I R=f(VR); parameter: T j
101
20
100
15
IR [µA]
Qc [nC]
10-1
10
175 °C
10-2
150 °C
100 °C
5
25 °C
10-3
-55 °C
10-4
0
100
400
700
100
1000
200
diF/dt [A/µs]
300
400
500
600
VR [V]
7 Typ. transient thermal impedance
8 Typ. capacitance vs. reverse voltage
Z thJC=f(t p); parameter: D = t P/T
C =f(V R); T C=25 °C, f =1 MHz
101
350
300
250
100
200
C [pF]
ZthJC [K/W]
0.5
0.2
150
0.1
10-1
100
0.05
0.02
50
0.01
0
0
10-2
10-6
10-5
10-4
10-3
10-2
10-1
100
101
102
103
VR [V]
tp [s]
Rev. 2.4
10-1
page 4
2012-12-12
IDH10SG60C
9 Typ. C stored energy
E C=f(V R)
10
8
Ec [µJ]
6
4
2
0
0
200
400
600
VR [V]
Rev. 2.4
page 5
2012-12-12
IDH10SG60C
PG-TO220-2: Outline
Dimensions in mm/inches
Rev. 2.4
page 6
2012-12-12
IDH10SG60C
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2012 Infineon Technologies AG
All Rights Reserved.
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The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
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on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
and/or automotive, aviation and aerospace applications or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support , automotive, aviation and
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Life support systems are intended to be implanted in the human body and/or maintain
and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
Rev. 2.4
page 7
2012-12-12