Silicon C a rbide Sc h ottk y Dio d e IDW10G120C5B 5th Generation thinQ!™ 1200 V SiC Schottky Diode Final Da ta sheet Rev. 2.0 2014-06-10 Indust rial Po wer C o ntrol IDW10G120C5B 5th Generation thinQ!™ 1200 V SiC Schottky Diode thinQ!TM SiC Schottky Diode 1 Features: CASE 2 3 Revolutionary semiconductor material - Silicon Carbide No reverse recovery current / No forward recovery Temperature independent switching behavior Low forward voltage even at high operating temperature Tight forward voltage distribution Excellent thermal performance Extended surge current capability Specified dv/dt ruggedness 1) Qualified according to JEDEC for target applications Pb-free lead plating; RoHS compliant Benefits System efficiency improvement over Si diodes Enabling higher frequency / increased power density solutions System size/cost savings due to reduced heatsink requirements and smaller magnetics Reduced EMI Highest efficiency across the entire load range Robust diode operation during surge events High reliability RelatedLinks: www.infineon.com/sic Applications Solar inverters Uninterruptable power supplies Motor drives Power Factor Correction Package pin definitions Pin 1 – anode 1 Pin 2 and backside – cathode Pin 3 – anode 2 Key Performance and Package Parameters (leg/device) Type IDW10G120C5B VDC IF QC Tj,max Marking Package 1200 V 5 / 10 A 28 / 57 nC 175°C D1012B5 PG-TO247-3 1) J-STD20 and JESD22 Final Data Sheet 2 Rev. 2.0, 2014-06-10 IDW10G120C5B 5th Generation thinQ!™ 1200 V SiC Schottky Diode Table of Contents SiC Schottky Diode ................................................................................................................................................ 2 Table of Contents .................................................................................................................................................. 3 Maximum ratings ................................................................................................................................................... 4 Thermal Resistances ............................................................................................................................................. 4 Electrical Characteristics ...................................................................................................................................... 5 Electrical Characteristics diagrams ..................................................................................................................... 6 Package Drawings ................................................................................................................................................. 9 Revision History .................................................................................................................................................. 10 Disclaimer …………………………………………………………………………………………………………………10 Final Data Sheet 3 Rev. 2.0, 2014-06-10 IDW10G120C5B 5th Generation thinQ!™ 1200 V SiC Schottky Diode Maximum ratings Parameter Symbol Repetitive peak reverse voltage VRRM Continuous forward current for Rth(j-c,max) TC = 156°C, D=1 TC = 135°C, D=1 TC = 25°C, D=1 Surge non-repetitive forward current, sine halfwave TC=25°C, tp=10ms TC=150°C, tp=10ms Non-repetitive peak forward current TC = 25°C, tp=10 µs i²t value TC = 25°C, tp=10 ms TC = 150°C, tp=10 ms Diode dv/dt ruggedness VR=0...960 V Power dissipation for Rth(j-c,max) TC = 25°C Operating and storage temperature Soldering temperature, wavesoldering only allowed at leads 1.6mm (0.063 in.) from case for 10 s Mounting torque M3 and M4 screws Value (leg/device) Unit 1200 V 5 / 10 8 / 16 17 / 34 IF A IF,SM 70 / 140 65 / 130 A IF,max 530 / 1070 A ∫ i²dt 25 / 98 21 / 84 A²s dv/dt 80 V/ns Ptot 74 / 148 W Tj;Tstg -55…175 °C Tsold 260 °C M 0.7 Nm Thermal Resistances Parameter Value (leg/device) Symbol Conditions min. typ. max. Unit Characteristic Diode thermal resistance, junction – case Thermal resistance, junction – ambient Final Data Sheet Rth(j-c) Rth(j-a) leaded - 4 1.6/0.8 - 2.0/1.0 K/W 62 K/W Rev. 2.0, 2014-06-10 IDW10G120C5B 5th Generation thinQ!™ 1200 V SiC Schottky Diode Electrical Characteristics Static Characteristic, at Tj=25°C, unless otherwise specified Parameter Symbol Conditions DC blocking voltage VDC Diode forward voltage VF Reverse current IR Value (leg/device) Tj = 25°C IF= 5/10 A, Tj=25°C IF= 5/10 A, Tj=150°C VR=1200 V, Tj=25°C VR=1200 V, Tj=150°C min. typ. max. 1200 - 1.4 1.7 3/6 14 / 28 1.65 2.30 40 / 80 210 / 420 Unit V V µA Dynamic Characteristics, at Tj=25°C, unless otherwise specified Parameter Value (leg/device) Symbol Conditions Unit min. typ. max. - 28 / 57 - nC - 365 / 730 26 / 51 20 / 41 - pF VR = 800 V, Tj=150°C & 25°C Total capacitive charge QC VR QC C (V )dV 0 Total Capacitance Final Data Sheet C VR=1 V, f=1 MHz VR=400 V, f=1 MHz VR=800 V, f=1 MHz 5 Rev. 2.0, 2014-06-10 IDW10G120C5B 5th Generation thinQ!™ 1200 V SiC Schottky Diode Electrical Characteristics diagrams Per leg Per leg Figure 1. Power dissipation per leg as function of case temperature, Ptot=f(TC), Rth(j-c),max Figure 2. Diode forward current per leg as function of case temperature, IF=f(TC), Tj≤175°C, Rth(j-c),max, parameter D=duty cycle, Vth, Rdiff @ Tj=175°C Per leg Per leg Figure 3. Typical forward characteristics per leg, IF=f(VF), tp= 10 µs, parameter: Tj Final Data Sheet Figure 4. Typical forward characteristics in surge current per leg, IF=f(VF), tp= 10 µs, parameter: Tj 6 Rev. 2.0, 2014-06-10 IDW10G120C5B 5th Generation thinQ!™ 1200 V SiC Schottky Diode 1.E-04 Per leg 1.E-05 Per leg IR [A] 1.E-06 1.E-07 175 C 150 C 1.E-08 100 C 1.E-09 200 Figure 5. Typical capacitive charge per leg as 1 function of current slope , QC=f(dIF/dt), Tj=150°C -55 C 600 800 VR [V] 1000 1200 Figure 6. Typical reverse characteristics per leg, IR=f(VR), parameter: Tj 1) guaranteed by design. Per leg Per leg Figure 7. Max. transient thermal impedance per leg, Zth,j-c=f(tP), parameter: D=tP/T Final Data Sheet 400 25 C Figure 8. Typical capacitance per leg as function of reverse voltage, C=f(VR); Tj=25°C; f=1 MHz 7 Rev. 2.0, 2014-06-10 IDW10G120C5B 5th Generation thinQ!™ 1200 V SiC Schottky Diode 18 16 Per leg 14 EC [µJ] 12 10 8 6 4 2 0 0 200 400 600 800 VR [V] 1000 1200 Figure 9. Typical capacitively stored energy as function of reverse voltage, per leg, EC=f(VR) Final Data Sheet 8 Rev. 2.0, 2014-06-10 IDW10G120C5B 5th Generation thinQ!™ 1200 V SiC Schottky Diode Package Drawings Final Data Sheet 9 Rev. 2.0, 2014-06-10 IDW10G120C5B 5th Generation thinQ!™ 1200 V SiC Schottky Diode Revision History IIDW10G120C5B Revision: 2014-06-10, Rev. 2.0 Previous Revision: Revision Date Subjects (major changes since last version) 2.0 Final data sheet Disclaimer We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: [email protected] Published by Infineon Technologies AG 81726 Munich, Germany © 2014 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Final Data Sheet 10 Rev. 2.0, 2014-06-10