IDW20G120C5B Data Sheet (588 KB, EN)

Silicon Carbide Schottky Diode
IDW20G120C5B
5th Generation thinQ!™ 1200 V SiC Schottky Diode
Final Da ta sheet
Rev. 2.0 2014-06-10
Indust rial Po wer C o ntrol
IDW20G120C5B
5th Generation thinQ!™ 1200 V SiC Schottky Diode
thinQ!TM SiC Schottky Diode
1
Features:
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CASE
2
3
Revolutionary semiconductor material - Silicon Carbide
No reverse recovery current / No forward recovery
Temperature independent switching behavior
Low forward voltage even at high operating temperature
Tight forward voltage distribution
Excellent thermal performance
Extended surge current capability
Specified dv/dt ruggedness
1)
Qualified according to JEDEC for target applications
Pb-free lead plating; RoHS compliant
Benefits
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System efficiency improvement over Si diodes
Enabling higher frequency / increased power density solutions
System size/cost savings due to reduced heatsink requirements and smaller magnetics
Reduced EMI
Highest efficiency across the entire load range
Robust diode operation during surge events
High reliability
RelatedLinks: www.infineon.com/sic
Applications
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Solar inverters
Uninterruptable power supplies
Motor drives
Power Factor Correction
Package pin definitions
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Pin 1 – anode 1
Pin 2 and backside – cathode
Pin 3 – anode 2
Key Performance and Package Parameters (leg/device)
Type
IDW20G120C5B
VDC
IF
QC
Tj,max
Marking
Package
1200V
10A / 20A
53nC / 106nC
175°C
D2012B5
PG-TO247-3
1) J-STD20 and JESD22
Final Data Sheet
2
Rev. 2.0, 2014-06-10
IDW20G120C5B
5th Generation thinQ!™ 1200 V SiC Schottky Diode
Table of Contents
Description…. ............................................................................................................................................. 2
Table of Contents ........................................................................................................................................ 3
Maximum ratings ......................................................................................................................................... 4
Thermal Resistances .................................................................................................................................. 4
Electrical Characteristics............................................................................................................................. 5
Electrical Characteristics diagram .............................................................................................................. 6
Package Drawings ...................................................................................................................................... 9
Revision History ........................................................................................................................................ 10
Disclaimer…. ............................................................................................................................................. 10
Final Data Sheet
3
Rev. 2.0, 2014-06-10
IDW20G120C5B
5th Generation thinQ!™ 1200 V SiC Schottky Diode
Maximum ratings
Parameter
Symbol
Repetitive peak reverse voltage
VRRM
Continuous forward current for Rth(j-c,max)
TC = 153°C, D=1
TC = 135°C, D=1
TC = 25°C, D=1
Surge non-repetitive forward current, sine halfwave
TC=25°C, tp=10ms
TC=150°C, tp=10ms
Non-repetitive peak forward current
TC = 25°C, tp=10 µs
i²t value
TC = 25°C, tp=10 ms
TC = 150°C, tp=10 ms
Diode dv/dt ruggedness
VR=0...960 V
Power dissipation for Rth(j-c,max)
TC = 25°C
Operating and storage temperature
Soldering temperature,
wavesoldering only allowed at leads
1.6mm (0.063 in.) from case for 10 s
Mounting torque
M3 and M4 screws
Value (leg/device)
Unit
1200
V
10 / 20
14 / 29
31 / 62
IF
A
IF,SM
95 / 190
90 / 180
A
IF,max
887 / 1774
A
∫ i²dt
45 / 180
41 / 162
A²s
dv/dt
80
V/ns
Ptot
125 / 250
W
Tj;Tstg
-55…175
°C
Tsold
260
°C
M
0.7
Nm
Thermal Resistances
Parameter
Value (leg/device)
Symbol Conditions
min.
typ.
max.
Unit
Characteristic
Diode thermal resistance,
junction – case
Thermal resistance,
junction – ambient
Final Data Sheet
Rth(j-c)
Rth(j-a)
leaded
-
4
0.9/0.45
-
1.2/0.6
K/W
62
K/W
Rev. 2.0, 2014-06-10
IDW20G120C5B
5th Generation thinQ!™ 1200 V SiC Schottky Diode
Electrical Characteristics
Static Characteristic, at Tj=25°C, unless otherwise specified
Parameter
Symbol Conditions
DC blocking voltage
VDC
Diode forward voltage
VF
Reverse current
IR
Value (leg/device)
Tj = 25°C
IF= 10/20 A, Tj=25°C
IF= 10/20 A, Tj=150°C
VR=1200V, Tj=25°C
VR=1200V, Tj=150°C
min.
typ.
max.
1200
-
1.4
1.7
6 / 12
29 / 58
1.65
2.30
83 / 166
420 / 840
Unit
V
V
µA
Dynamic Characteristics, at Tj=25°C, unless otherwise specified
Parameter
Value (leg/device)
Symbol Conditions
Unit
min.
typ.
max.
-
53 / 106
-
nC
-
684 /1368
48 / 96
38 / 76
-
pF
VR = 800V, Tj=150° C & 25°C
Total capacitive charge
QC
VR
QC   C (V )dV
0
Total Capacitance
Final Data Sheet
C
VR=1 V, f=1 MHz
VR=400 V, f=1 MHz
VR=800 V, f=1 MHz
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Rev. 2.0, 2014-06-10
IDW20G120C5B
5th Generation thinQ!™ 1200 V SiC Schottky Diode
Electrical Characteristics diagrams
120
140
Per leg
Per leg
120
D= 0.30
100
D= 0.50
D= 0.70
100
80
IF [A]
80
P [W]
D= 0.10
60
D= 1.00
60
40
40
20
20
0
0
25
50
75
25
100 125 150 175
50
75
Tc [°C]
Figure 1. Power dissipation per leg as function
of case temperature, Ptot=f(TC),
Rth(j-c),max
150
175
Figure 2. Diode forward current per leg as function
of temperature, parameter: Tj≤175°C, Rth(j-c),max,
D=duty cycle, Vth, Rdiff @ Tj=175°C
20
100
Per leg
18
Per leg
90
-55 C
16
-55 C
80
25 C
25 C
14
12
70
60
100 C
10
IF [A]
IF [A]
100 125
Tc [°C]
150 C
8
100 C
50
40
175 C
6
30
4
20
2
10
0
150 C
175 C
0
0
0.5
1
1.5
VF [V]
2
2.5
0
Figure 3. Typical forward characteristics per leg,
IF=f(VF), tp= 10 µs, parameter: Tj
Final Data Sheet
1
2
3
VF [V]
4
5
6
Figure 4. Typical forward characteristics in surge
current per leg, IF=f(VF), tp= 10 µs,
parameter: Tj
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Rev. 2.0, 2014-06-10
IDW20G120C5B
5th Generation thinQ!™ 1200 V SiC Schottky Diode
60
1.E-04
Per leg
50
1.E-05
Per leg
40
IR [A]
QC [nC]
1.E-06
30
1.E-07
175 C
20
150 C
1.E-08
10
100 C
0
100
400
700
dIF/dt [A/µs]
1.E-09
200
1000
Figure 5. Typical capacitive charge per leg as
1
function of current slope , QC=f(dIF/dt), Tj=150°C
400
-55 C
25 C
600
800
VR [V]
1000
1200
Figure 6. Typical reverse characteristics per leg,
IR=f(VR), parameter: Tj
1) guaranteed by design.
900
800
Per leg
Per leg
1
600
500
C [pF]
Zthjc [K/W]
700
D= 0.50
D= 0.20
0.1
400
300
D= 0.10
200
D= 0.05
D= 0.02
100
D= 0.01
Single Pulse
0.01
1E-6
0
1E-3
tp [s]
0
1E0
10
100
1000
VR [V]
Figure 7. Max. transient thermal impedance per leg,
Zth,j-c=f(tP), parameter: D=tP/T
Final Data Sheet
1
Figure 8. Typical capacitance per leg as function of
reverse voltage, C=f(VR); Tj=25°C; f=1 MHz
7
Rev. 2.0, 2014-06-10
IDW20G120C5B
5th Generation thinQ!™ 1200 V SiC Schottky Diode
35
Per leg
30
EC [µJ]
25
20
15
10
5
0
0
200
400
600 800
VR [V]
1000 1200
Figure 9. Typical capacitively stored energy as
function of reverse voltage, per leg, EC=f(VR)
Final Data Sheet
8
Rev. 2.0, 2014-06-10
IDW20G120C5B
5th Generation thinQ!™ 1200 V SiC Schottky Diode
Package Drawings
Final Data Sheet
9
Rev. 2.0, 2014-06-10
IDW20G120C5B
5th Generation thinQ!™ 1200 V SiC Schottky Diode
Revision History
IIDW20G120C5B
Revision: 2014-06-10, Rev. 2.0
Previous Revision:
Revision
Date Subjects (major changes since last version)
2.0
Final data sheet
Disclaimer
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Published by
Infineon Technologies AG
81726 Munich, Germany
© 2014 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all
warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual
property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or
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failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or
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human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to
assume that the health of the user or other persons may be endangered.
Final Data Sheet
10
Rev. 2.0, 2014-06-10