T PL IA N M CO *R oH S Features This series is currently available but not recommended for new designs. ■ High-speed switching ■ Surge withstand ■ RoHS compliant* CDSOT23-S2004 - Switching Diode Array General Information The Bourns® Model CDSOT23-S2004 device is a high-speed switching diode array offering a Working Peak Reverse Voltage of 240 V and a Minimum Breakdown Voltage of 300 V. The SOT23 packaged device will mount directly onto the industry standard SOT23 footprint. Bourns® Chip Diodes conform to JEDEC standards, are easy to handle with standard pick and place equipment and their flat configuration minimizes roll away. 3 1 2 Maximum Ratings (@ TA = 25 °C Unless Otherwise Noted) Parameter Symbol CDSOT23-S2004 Unit Peak Repetitive Peak Reverse Voltage VRRM 300 V Working Peak Reverse Voltage VRWM 240 V DC Blocking Voltage VR 240 V RMS Reverse Voltage VR (RMS) 170 V Forward Continuous Current (Note 2) IFM 225 mA Peak Repetitive Forward Current (Note 2) IFRM 625 mA Peak Forward Surge Current @ t = 1.0 μs @ t = 1.0 s IFSM 4.0 1.0 A PD 350 mW Storage Temperature TSTG -55 to +150 °C Operating Temperature TOPR -55 to +150 °C Power Dissipation (Note 2) Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted) Parameter Reverse Breakdown Voltage (Note 1) @ IR = 100 μA Symbol Min. VBR 300 Reverse Leakage Current (Note 1) @ VR = 240 V IR Forward Voltage @ IF = 20 mA @ IF = 100 mA VF Diode Capacitance @ VR = 0 V, f = 1 MHz CT Thermal Resistance, Junction to Ambient (Note 2) Reverse Recovery Time @ IF = IR = 30 mA, IRR = 3.0 mA, RL = 100 Ω Typ. Max. Unit V 100 nA 0.50 0.75 0.87 1.00 V 3 5 pF RθJA 357 °C/W trr 50 ns Notes: 1. Short duration pulse test used to minimize self-heating effect. 2. Part mounted on FR-4 board with recommended pad layout. *RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011. Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications. Applications ■ Personal Digital Assistants (PDAs) ■ Mobile phones and accessories ■ Memory card protection ■ SIM card port protection ■ Portable electronics CDSOT23-S2004 - Switching Diode Array Product Dimensions Recommended Footprint This is an RoHS compliant molded JEDEC SOT23 package with 100 % Matte Sn on the lead frame. It weighs approximately 8 mg and has a flammability rating of UL 94V-0. A B A B C 3 J C 1 D 2 I E E D F DIMENSIONS = MILLIMETERS (INCHES) DIMENSIONS = MILLIMETERS (INCHES) G Dimensions H Dimensions A 0.95 (0.037) B 0.95 (0.037) A 2.80 - 3.04 (0.1102 - 0.1197) C B 0.89 - 1.02 (0.0350 - 0.0401) 2.00 (0.079) D C 1.20 - 1.40 (0.0472 - 0.0551) 0.85 (0.033) E D 2.10 - 2.50 (0.0830 - 0.0984) 0.85 (0.033) E 1.78 - 2.04 (0.0701 - 0.0807) F 0.45 - 0.60 (0.0177 - 0.0236) G 0.89 - 1.11 (0.035 - 0.044) H 0.34 - 0.50 (0.0150 - 0.0200) I 0.45 - 0.60 (0.0180 - 0.0236) J 0.085 - 0.177 (0.0034 - 0.0070) How to Order CD SOT23 - S 2004 Common Diode Chip Diode Package SOT23 = SOT23 Package Model S = Switching Diode Working Peak Reverse Voltage 2004 = 240 VRWM (Volts) Typical Part Marking CDSOT23-S2004.......................................................................... S6 Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications. CDSOT23-S2004 - Switching Diode Array Performance Graphs Forward Current Characteristics Reverse Current Characteristics 1,000.0000 100.0 10.0 +150 °C +125 °C +100 °C +75 °C 1.0 0.1 0.0 0.0 0.2 0.4 0.8 0.6 1.0 +50 °C +25 °C -25 °C -40 °C 1.2 Reverse Current (μA) Forward Current (mA) 1000.0 100.0000 10.0000 1.000 0.1000 0.0010 0.001 1.4 1 51 101 Forward Voltage (V) 251 +50 °C +25 °C -25 °C -40 °C 0.4 0.3 0.2 0.1 0.0 0 100 200 300 400 500 VZ (V) 0 25 50 75 100 Ta (°C) Typical Capacitance 2.0 1.6 Capacitance of Diodes (pF) 201 Power Derating Curve IF (A) IR (μA) +150 °C +125 °C +100 °C +75 °C 151 Reverse Voltage (V) Reverse Voltage Characteristics 500 450 400 350 300 250 200 150 100 50 0 +50 °C +25 °C -25 °C -40 °C +150 °C +125 °C +100 °C +75 °C 0.0100 1.2 0.8 0.4 0.0 0 5 10 15 20 25 30 35 Reverse Voltage (V) Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications. 125 150 175 CDSOT23-S2004 - Switching Diode Array Packaging Information The product is packaged in a 12 mm x 8 mm tape and reel format per EIA-481-A standard. P 0 P 1 Index Hole d E T 120 ° F D2 W B D1 P A Trailer ....... ....... End C Device ....... ....... D Leader ....... ....... ....... ....... W1 Start DIMENSIONS: 10 pitches (min.) 10 pitches (min.) MM (INCHES) Direction of Feed Item Symbol SOT23 Carrier Width A 2.25 ± 0.10 (0.088 ± 0.004) Carrier Length B 2.34 ± 0.10 (0.092 ± 0.004) Carrier Depth C 1.22 ± 0.10 (0.048 ± 0.004) Sprocket Hole d 1.55 ± 0.05 (0.061 ± 0.002) Reel Outside Diameter D 178 (7.008) Reel Inner Diameter D1 50.0 MIN. (1.969) Feed Hole Diameter D2 13.0 ± 0.20 (0.512 ± 0.008) Sprocket Hole Position E 1.75 ± 0.10 (0.069 ± 0.004) Punch Hole Position F 3.50 ± 0.05 (0.138 ± 0.002) Punch Hole Pitch P 4.00 ± 0.10 (0.157 ± 0.004) Sprocket Hole Pitch P0 4.00 ± 0.10 (0.157 ± 0.004) Embossment Center P1 2.00 ± 0.05 (0.079 ± 0.002) Overall Tape Thickness T 0.20 ± 0.10 (0.008 ± 0.004) Tape Width W 8.00 ± 0.20 (0.315 ± 0.008) Reel Width Quantity per Reel W1 -- 14.4 MAX. (0.567) 3,000 REV. 12/15 Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications.