T PL IA N M CO Features Applications ■ 3 kA, 8/20 µs surge capability ■ High power DC bus protection *R oH S ■ Low clamping voltage under surge ■ Bidirectional TVS ■ Excellent performance over temperature Model PTVS3-015C-TH High Current TVS Diode General Information The Model PTVS3-015C-TH high current bidirectional TVS diode is designed for use in high power DC bus clamping applications. This device offers bidirectional port protection. The device is RoHS* compliant and halogen free**. It also meets IEC 61000-4-5 8/20 μs current surge requirements. Absolute Maximum Ratings (@ TA = 25 °C Unless Otherwise Noted) Rating Symbol Value Repetitive Standoff Voltage VWM 15 V Peak Current Rating per 8/20 μs IEC 61000-4-5 IPPM 3 kA Operating Junction Temperature Range TJ -40 to +125 °C Storage Temperature Range TS -55 to +150 °C 260 °C Lead Temperature, Soldering (10 s) Unit Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted) Parameter ID Test Conditions Standby Current IBR = 10 mA Clamping Voltage (1) per IEC61000-4-5 (8/20 μs current waveform) IPP = 3 kA V(BR) Temperature Coefficient C Capacitance Typ. Max. Unit 10 μA 16 17.5 19 V VD = VWM V(BR) Breakdown Voltage VC Min. F = 10 kHz, Vd = 1 Vrms 28 V 0.1 %/°C 7.5 nF (1) V measured at the time which is coincident with the peak surge current. C Asia-Pacific: Tel: +886-2 2562-4117 • Fax: +886-2 2562-4116 EMEA: Tel: +36 88 520 390 • Fax: +36 88 520 211 The Americas: Tel: +1-951 781-5500 • Fax: +1-951 781-5700 www.bourns.com * RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011. **Bourns considers a product to be “halogen free” if (a) the Bromine (Br) content is 900 ppm or less; (b) the Chlorine (Cl) content is 900 ppm or less; and (c) the total Bromine (Br) and Chlorine (Cl) content is 1500 ppm or less. Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications. Model PTVS3-015C-TH High Current TVS Diode Performance Graphs Percentage VBR Change vs. Junction Temperature VBR Change vs. Temperature (%) V-I Characteristic 12 10 8 Normalized to 25 °C 6 4 2 0 -2 -4 -6 -8 -10 -12 -40 -20 0 20 40 60 80 100 120 140 Junction Temperature (°C) Typical Surge Current Derating Percent of Rated Value 120 110 100 90 80 70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 175 Ambient Temperature (°C) This graph shows the typical device surge current derating versus ambient temperature when subjected to the 8/20 µs current waveform per the IEC 61000-4-5 specification. This device is not intended for continuous operation at temperatures above 125 °C. Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications. Model PTVS3-015C-TH High Current TVS Diode Product Dimensions Epoxy encapsulation materials conform to UL 94V-0. Silver plated lead finish conforms to the solderability requirements of JESD22-B102, Pb free solder. Package dimensions are shown below: G Dim. F A B D C C D H E F B E DIMENSIONS: A MM (INCHES) G H Typical Part Marking PTVS3-015C-TH 24.15 ± 0.72 (0.951 ± 0.028) 2.40 ± 0.50 (0.094 ± 0.020) 1.75 ± 1.25 (0.069 ± 0.049) 10.80 Max. (0.425) 1.25 ± 0.05 (0.049 ± 0.002) 9.30 Max. (0.366) 4.00 Max. (0.157) 6.00 ± 1.00 (0.236 ± 0.039) How to Order PTVS 3 - 015 C - T H PTVS3-015C-TH .......................................................................3015 Series PTVS = Power TVS High Current Diode Peak Current Rating 3 = 3 kA Repetitive Standoff Voltage 015 = 15 V Suffix C = Bidirectional Device Package T = Through-Hole Temperature H = High Temperature Series 11/15 Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications.