PL IA N T Features CO M ■ RoHS compliant* *R oH S ■ SMA package ■ Surface mount ■ Very low forward voltage drop CD214A-B220 ~ B260 Schottky Barrier Rectifier Chip Diode General Information The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly smaller electronic components. Bourns offers Schottky Rectifier Diodes for rectification applications, in compact chip package DO-214AC (SMA) size format, which offer PCB real estate savings and are considerably smaller than competitive parts. The Schottky Rectifier Diodes offer a forward current of 2 A with a choice of repetitive peak reverse voltage of 20 V up to 60 V. Bourns® Chip Diodes conform to JEDEC standards, are easy to handle on standard pick and place equipment and their flat configuration minimizes roll away. Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted) Parameter Forward Voltage (Max.) (lf = 2 A) Typical Junction Capacitance** Reverse Current (Max.) at Rated VR) Symbol VF B220 B230 B240 0.5 0.5 0.5 CD214AB240L 0.43 CT IR B250 B260 0.7 0.7 200 0.5 0.5 0.5 Unit V pF 2.0 0.5 0.5 B250 B260 mA ** Measured at 1.0 MHz and applied reverse voltage of 4.0 VDC. Absolute Ratings (@ TA = 25 °C Unless Otherwise Noted) Parameter Repetitive Peak Reverse Voltage Reverse Voltage Maximum RMS Voltage Avg. Forward Current Forward Current, Surge Peak (60 Hz, 1 cycle) Typical Thermal Resistance*** Storage Temperature Symbol CD214AB240L Unit B220 B230 B240 VRRM 20 30 40 40 50 60 V VR 20 30 40 40 50 60 V VRMS 14 21 28 28 35 42 V IO 2 A Isurge 50 50 50 25 50 50 A RƟJL 15 15 15 18 15 15 °C/W TSTG Junction Temperature TJ *** Thermal resistance junction to lead. -55 to +150 °C -55 to +125 °C How to Order CD 214A - B 2 40 L LF Asia-Pacific: Tel: +886-2 2562-4117 • Fax: +886-2 2562-4116 EMEA: Tel: +36 88 520 390 • Fax: +36 88 520 211 The Americas: Tel: +1-951 781-5500 • Fax: +1-951 781-5700 www.bourns.com *RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011. Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications. Common Code Chip Diode Package 214A = SMA/DO-214AC Model B = Schottky Barrier Series Average Forward Current (IO) Code 2 = 2 A (Code x 1000 mA = Average Forward Current) Reverse Voltage (VR) Code 30 = 30 V 40 = 40 V 60 = 60 V Forward Voltage Suffix (Applies to -B240L only) L = Low Forward Voltage Vf (-B240L only) No Space in P/N = Not Low Forward Voltage Terminations LF = 100 % Sn (RoHS Compliant*) CD214A-B220 ~ B260 Schottky Barrier Rectifier Chip Diode Product Dimensions Recommended Pad Layout A A B C B C G F H D Dimension SMA (DO-214AC) A 2.90 (0.114) B 2.40 (0.094) C 2.30 (0.091) E Dimension SMA (DO-214AC) A 4.06 - 4.57 (0.160 - 0.180) B 2.29 - 2.92 (0.090 - 0.115) C 1.27 - 1.63 (0.050 - 0.064) D 0.15 - 0.31 (0.006 - 0.110) E 4.83 - 5.59 (0.190 - 0.220) F 0.05 - 0.20 (0.002 - 0.008) G 2.01 - 2.62 (0.080 - 0.103) H 0.76 - 1.52 (0.030 - 0.060) DIMENSIONS: MM (INCHES) DIMENSIONS: MM (INCHES) Physical Specifications Case ...........................................................................Molded plastic Polarity.................................................... Indicated by cathode band Weight .................................................. 0.002 ounces / 0.064 grams Typical Part Marking CD214A-B220 .....................................................................B CD214A-B230 .....................................................................B CD214A-B240 .....................................................................B CD214A-B240L ...................................................................B CD214A-B250 .....................................................................B CD214A-B260 .....................................................................B 220A 230A 240A 240LA 250A 260A Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications. CD214A-B220 ~ B260 Schottky Barrier Rectifier Chip Diode Rating and Characteristic Curves: CD214A-B220, CD214A-B230, CD214A-B240, CD214A-B250 & CD214A-B260 Forward Characteristics Reverse Characteristics 10 100 10 B250 to B260 Reverse Current (mAmps) Forward Current (Amps) B220 to B240 1 0.1 Tj=125 °C Tj=100 °C 1 0.1 0.01 Tj=25 °C Tj=25 °C PULSEWIDTH 300μs 0.01 0.001 0.2 0.0 0.4 0.6 0.8 1.0 0 20 Forward Voltage (Volts) 40 60 80 120 140 Percent of Rated Peak Reverse Voltage (%) Derating Curve Capacitance Between Terminals 2.50 1000 900 2.00 F = 1 MHz Ta = 25 °C 800 700 1.50 Capacitance (pF) Average Forward Current (Amps) 100 1.00 600 500 400 300 0.50 200 Single Phase Half Wave 60 Hz Resistive or Inductive Load 100 0.00 0 25 50 75 100 Lead Temperature (°C) 125 150 0 20 40 60 Reverse Voltage (Volts) Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications. 80 100 CD214A-B220 ~ B260 Schottky Barrier Rectifier Chip Diode Rating and Characteristic Curves: CD214A-B240L Forward Characteristics Reverse Characteristics 10 1000 1 Reverse Current (mAmps) C Forward Current (Amps) 100 Tj=25 °C Tj=125 °C Tj=100 °C 10 1 Tj=25 °C 0.1 Tj=125 °C PULSEWIDTH 300μs Tj=100 °C 0.1 0.01 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 0.55 0.60 0.65 0 0 5 10 Forward Voltage (Volts) 15 20 25 30 40 45 Rated Peak Reverse Voltage (V) Derating Curve Capacitance Between Terminals 2.50 1000 F = 1 MHz Ta = 25 °C 900 2.00 800 700 Capacitance (pF) Average Forward Current (Amps) 35 1.50 1.00 600 500 400 300 200 0.50 Single Phase Half Wave 60 Hz Resistive or Inductive Load 100 0 0.00 25 50 75 100 Lead Temperature (°C) 125 150 0 20 40 60 80 100 Reverse Voltage (Volts) Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications. 3312 - 2 mm~ B260 SMDSchottky Trimming Potentiometer CD214A-B220 Barrier Rectifier Chip Diode Packaging Information The product is dispensed in tape and reel format (see diagram below). P 0 P 1 d T E Index Hole Pin 1 Location 120 ° F D2 W B D1 D P A Trailer ....... ....... End C Device ....... ....... Leader ....... ....... ....... ....... W1 Start DIMENSIONS: 10 pitches (min.) MM (INCHES) 10 pitches (min.) Direction of Feed Item Symbol SMA (DO-214AC) Carrier Width A 2.90 ± 0.10 (0.114 ± 0.004) Carrier Length B 5.59 ± 0.10 (0.220 ± 0.004) Carrier Depth C 2.36 ± 0.10 (0.093 ± 0.004) Sprocket Hole d 1.55 ± 0.05 (0.061 ± 0.002) Reel Outside Diameter D 3.30 (12.992) Reel Inner Diameter D1 Feed Hole Diameter D2 13.0 ± 0.20 (0.512 ± 0.008) Sprocket Hole Position E 1.75 ± 0.10 (0.069 ± 0.004) Punch Hole Position F 5.50 ± 0.05 (0.217 ± 0.002) Punch Hole Pitch P 4.00 ± 0.10 (0.157 ± 0.004) Sprocket Hole Pitch P0 4.00 ± 0.10 (0.157 ± 0.004) Embossment Center P1 2.00 ± 0.05 (0.079 ± 0.002) Overall Tape Thickness T 0.30 ± 0.10 (0.012 ± 0.004) Tape Width W 12.00 ± 0.20 (0.472 ± 0.008) Reel Width W1 Quantity per Reel -- Devices are packed in accordance with EIA standard RS-481-A and specifications shown here. 50.0 MIN. (1.969) 18.4 MAX. (0.724) 5,000 REV. 09/15 Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications.