PL IA N T Features CO M ■ RoHS compliant* ■ For use in low voltage high frequency inverters, free wheeling and polarity protection applications *R oH S ■ Reverse voltage from 20 to 60 V ■ Forward current of 1 A ■ High current capability CD214B-B120 ~ B160 Schottky Barrier Rectifier Chip Diode General Information The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly smaller electronic components. Bourns offers Schottky Rectifier Diodes for rectification applications, in compact chip package DO-214AA (SMB) size format, which offer PCB real estate savings and are considerably smaller than most competitive parts. The Schottky Rectifier Diodes offer a forward current of 1 A with a choice of repetitive peak reverse voltage of 20 V up to 60 V. Bourns® Chip Diodes conform to JEDEC standards, are easy to handle with standard pick and place equipment and their flat configuration minimizes roll away. Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted) Parameter Symbol Maximum Repetitive Peak Reverse Voltage Maximum RMS Voltage CD214B- Unit B120 B130 B140 B150 B160 VRRM 20 30 40 50 60 V VRMS 14 21 28 35 42 V Maximum DC Blocking Voltage VDC 20 30 40 50 60 V Maximum Average Forward Rectified Current1 I(AV) 1 A DC Reverse Current @ Rated DC Blocking Voltage (@TA = 25 °C) IR 0.5 mA DC Reverse Current @ Rated DC Blocking Voltage (@TA = 100 °C) IR 10 mA Typical Junction Capacitance CJ 110 pF 2 Maximum Instantaneous Forward Voltage @ 1 A Typical Thermal Resistance VF 3 Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load (JEDEC Method) 0.5 0.7 V RθJA 22 °C/W IFSM 30 A Notes: 1 See Forward Derating Curve. 2 Measured at 1 MHz and an applied reverse voltage of 4.0 V. 3 Thermal resistance from junction to ambient and from junction to lead P.C.B. mounted on 0.2 x 0.2 ˝ (5.0 x 5.0 mm) copper pad areas. Thermal Characteristics (@ TA = 25 °C Unless Otherwise Noted) Parameter Operating Temperature Range Storage Temperature Range Symbol TJ TSTG CD214BB120 B130 B140 -55 to +125 B150 B160 -55 to +150 -55 to +150 *RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011. Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications. Unit °C °C CD214B-B120 ~ B160 Schottky Barrier Rectifier Chip Diode Product Dimensions Recommended Pad Layout A A B B C DIMENSIONS: G F H MM (INCHES) Dimension SMA (DO-214AC) A 2.90 (0.114) B 3.00 (0.118) C 2.30 (0.091) D E Dimension A B C D E F G H SMB (DO-214AA) 4.06 - 4.57 (0.160 - 0.180) 3.30 - 3.94 (0.130 - 0.155) 1.96 - 2.21 (0.078 - 0.087) 0.15 - 0.31 (0.006 - 0.112) 5.21 - 5.59 (0.205 - 0.220) 0.05 - 0.20 (0.002 - 0.008) 2.01 - 2.62 (0.080 - 0.103) 0.76 - 1.52 (0.030 - 0.060) C Physical Specifications Case ........................................................................... Molded plastic Polarity ...................................................Indicated by cathode band Weight ...................................................0.003 ounces / 0.093 grams Typical Part Marking CD214B-B120 ...................................................................... 120B CD214B-B130 ...................................................................... 130B CD214B-B140 ...................................................................... 140B CD214B-B150 ...................................................................... 150B CD214B-B160 ...................................................................... 160B How To Order MM DIMENSIONS: (INCHES) CD 214B - B 1 30 LF Common Code Chip Diode Package • 214B = SMB/DO-214AA Model B = Schottky Barrier Series Average Forward Current (Io) Code 1 = 1 A (Code x 1000 mA = Average Forward Current) Reverse Voltage (VR) Code 20 = 20 V 30 = 30 V 40 = 40 V 50 = 50 V 60 = 60 V Terminations LF = 100 % Sn (RoHS Compliant) Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications. CD214B-B120 ~ B160 Schottky Barrier Rectifier Chip Diode Rating and Characteristic Curves Forward Current Derating Curve Maximum Non-Repetitive Surge Current Peak Forward Surge Current (Amps) Average Forward Current (Amps) 1.00 0.75 0.50 0.25 Single Phase Half Wave 60 Hz Resistive or Inductive Load 0.00 20 40 60 80 100 120 30 20 10 Pulse Width 8.3 ms Single Half Sine-Wave (JEDEC Method) 0 140 1 2 Lead Temperature (°C) Typical Forward Characteristics 10 20 100 1000 B120 to B140 1.0 Capacitance (pF) Ta = 25 °C Pulsewidth: 300 µs B150 to B160 0.1 100 F = 1 MHz TJ = 25 °C .01 0 0.4 0.2 0.6 0.8 1.0 0 0.1 Instantaneous Forward Voltage (Volts) 1.0 4.0 100 10 Ta = 125 °C 1.0 Ta = 100 °C 0.1 0.01 Ta = 25 °C 0.001 0 20 40 60 10.0 Reverse Voltage (Volts) Typical Reverse Characteristics Instantaneous Reverse Current (mA) 50 Typical Junction Capacitance 10 Instantaneous Forward Current (Amps) 5 Number of Cycles at 60 Hz 80 100 120 140 Percent of Rated Peak Reverse Voltage (%) Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications. 100 CD214B-B120 ~ B160 Schottky Barrier Rectifier Chip Diode Packaging Information The product will be dispensed in Tape and Reel format (see diagram below). P 0 P 1 d T E Index Hole 120 ° F D2 W B D1 D P A Trailer End C Device Leader ....... ....... ....... ....... ....... ....... ....... ....... W1 Start DIMENSIONS: 10 pitches (min.) 10 pitches (min.) Devices are packed in accordance with EIA standard RS-481-A and specifications shown here. Direction of Feed Item MM (INCHES) Symbol Carrier Width A Carrier Length B Carrier Depth C Sprocket Hole d Reel Outside Diameter D Reel Inner Diameter D1 Feed Hole Diameter D2 Sprocket Hole Position E Punch Hole Position F Punch Hole Pitch P Sprocket Hole Pitch P0 Embossment Center P1 Overall Tape Thickness T Tape Width W Reel Width W1 SMB (DO-214AA) 4.94 ± 0.10 (0.194 ± 0.004) 5.57 ± 0.10 (0.219 ± 0.004) 2.36 ± 0.10 (0.093 ± 0.004) 1.55 ± 0.05 (0.061 ± 0.002) 330 (12.992) 50.0 MIN. (1.969) 13.0 ± 0.20 (0.512 ± 0.008) 1.75 ± 0.10 (0.069 ± 0.004)) 5.50 ± 0.05 (0.217 ± 0.002) 4.00 ± 0.10 (0.157 ± 0.004) 4.00 ± 0.10 (0.157 ± 0.004) 2.00 ± 0.05 (0.079 ± 0.002) 0.30 ± 0.10 (0.012 ± 0.004) 12.00 ± 0.20 (0.472 ± 0.008) 18.4 MAX. (0.724) Quantity per Reel -- 3,000 REV. 09/15 Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications.