Composite Transistors XN5531 Silicon NPN epitaxial planer transistor Unit: mm For high frequency oscillation and mixing +0.2 2.8 –0.3 +0.25 3 (Ta=25˚C) Symbol Ratings Unit Collector to base voltage VCBO 15 V Rating Collector to emitter voltage of Emitter to base voltage element Collector current VCEO 10 V VEBO 3 V IC 50 mA PT 200 mW Total power dissipation Overall Junction temperature Storage temperature Tj 150 ˚C Tstg –55 to +150 ˚C 1 : Collector (Tr1) 2 : Emitter (Tr2) 3 : Collector (Tr2) 4 : Base (Tr2) 5 : Base (Tr1) 6 : Emitter (Tr1) EIAJ : SC–74 Mini Type Package (6–pin) Marking Symbol: 5M Internal Connection 6 Tr1 4 ■ Electrical Characteristics Parameter 1 2 5 Tr2 3 (Ta=25˚C) Symbol Conditions min typ max Unit Collector to emitter voltage VCEO IC = 2mA, IB = 0 10 V Emitter to base voltage VEBO IE = 10µA, IC = 0 3 V ICBO VCB = 10V, IE = 0 1 µA ICEO VCE = 10V, IB = 0 10 µA Forward current transfer ratio hFE1 VCE = 4V, IC = 5mA 75 200 Forward current transfer hFE ratio hFE (small/large)*1 VCE = 4V, IC = 5mA 0.5 0.99 hFE2/hFE1 ratio hFE2/hFE1 Collector cutoff current *1 +0.1 +0.1 0 to 0.05 0.4±0.2 ■ Absolute Maximum Ratings 1.45±0.1 +0.1 4 0.1 to 0.3 Parameter 0.5 –0.05 2 0.16–0.06 0.95 +0.2 2SC3130 × 2 elements 5 0.95 2.9 –0.05 1.1–0.1 +0.2 ■ Basic Part Number of Element ● 1.9±0.1 Two elements incorporated into one package. Reduction of the mounting area and assembly cost by one half. 0.8 ● 0.65±0.15 1 6 ■ Features ● 1.5 –0.05 0.3 –0.05 0.65±0.15 VCE = 4V, IC = 100µA VCE = 4V, IC = 5mA 0.75 1.6 Collector to emitter saturation voltage VCE(sat) IC = 20mA, IB = 4mA Collector output capacitance Cob VCB = 4V, IE = 0, f = 1MHz 0.5 V 1.1 pF Transition frequency fT VCB = 4V, IE = –5mA, f = 200MHz Collector to base parameter rbb'·CC VCB = 4V, IE = –5mA, f = 30MHz 1.9 2.5 GHz 11.8 13.5 ps Common base reverse transfer capacitance Crb VCB = 4V, IE = 0, f = 1MHz 0.25 0.35 pF 0.9 1.4 400 Ratio between 2 elements 1 XN5531 Composite Transistors PT — Ta IC — VCE 240 IC — VBE 80 60 160 120 80 60 IB=500µA 400µA 40 300µA 200µA 20 100µA 40 40 80 120 0 160 2 3 1 Ta=75˚C 25˚C –25˚C 1 0.3 3 10 30 100 Cob — VCB Collector output capacitance Cob (pF) 1.6 f=1MHz IE=0 Ta=25˚C 1.2 1.0 0.8 0.6 0.4 0.2 0 1 3 10 6 8 10 12 0 0.4 30 100 Collector to base voltage VCB (V) 0.8 1.2 1.6 2.0 Base to emitter voltage VBE (V) fT — I E 4.0 300 Ta=75˚C 240 25˚C 180 –25˚C 120 60 VCB=4V Ta=25˚C 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0.1 0.3 1 3 10 30 Collector current IC (mA) Collector current IC (mA) 1.4 20 VCE=4V Forward current transfer ratio hFE Collector to emitter saturation voltage VCE(sat) (V) 10 0.01 0.1 30 hFE — IC 30 0.03 4 360 IC/IB=10 0.1 40 Collector to emitter voltage VCE (V) VCE(sat) — IC 100 –25˚C 0 0 Ambient temperature Ta (˚C) 0.3 Ta=75˚C 10 Transition frequency fT (GHz) 0 Collector current IC (mA) 50 Collector current IC (mA) Total power dissipation PT (mW) 200 0 2 VCE=4V 25˚C Ta=25˚C 100 0 –0.1 –0.3 –1 –3 –10 –30 Emitter current IE (mA) –100