Composite Transistors XN5501 Silicon NPN epitaxial planer transistor Unit: mm For general amplification +0.2 2.8 –0.3 +0.25 3 (Ta=25˚C) Symbol Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage Rating Emitter to base voltage of element Collector current VCEO 50 V VEBO 7 V IC 100 mA Peak collector current ICP 200 mA Total power dissipation PT 300 mW Overall Junction temperature Tj 150 ˚C Tstg –55 to +150 ˚C Storage temperature 1 : Collector (Tr1) 2 : Emitter (Tr2) 3 : Collector (Tr2) ■ Electrical Characteristics Parameter Collector to base voltage 4 : Base (Tr2) 5 : Base (Tr1) 6 : Emitter (Tr1) EIAJ : SC–74 Mini Type Package (6–pin) Marking Symbol: 5L Internal Connection 6 Tr1 1 2 5 4 Tr2 3 (Ta=25˚C) Symbol Conditions min typ max Unit VCBO IC = 10µA, IE = 0 60 V Collector to emitter voltage VCEO IC = 2mA, IB = 0 50 V Emitter to base voltage VEBO IE = 10µA, IC = 0 7 V Collector cutoff current *1 +0.1 +0.1 0 to 0.05 0.4±0.2 ■ Absolute Maximum Ratings 1.45±0.1 +0.1 4 0.1 to 0.3 Parameter 0.5 –0.05 0.95 2 0.16–0.06 2SD601A × 2 elements 5 0.95 +0.2 2.9 –0.05 1.1–0.1 ● +0.2 ■ Basic Part Number of Element 1.9±0.1 Two elements incorporated into one package. Reduction of the mounting area and assembly cost by one half. 0.8 ● 0.65±0.15 1 6 ■ Features ● 1.5 –0.05 0.3 –0.05 0.65±0.15 ICBO VCB = 20V, IE = 0 0.1 µA ICEO VCE = 10V, IB = 0 100 µA Forward current transfer ratio hFE VCE = 10V, IC = 2mA 160 Forward current transfer hFE ratio hFE (small/large)*1 VCE = 10V, IC = 2mA 0.5 460 0.99 Collector to emitter saturation voltage VCE(sat) IC = 100mA, IB = 10mA 0.1 Transition frequency fT VCB = 10V, IE = –2mA, f = 200MHz 150 0.3 MHz V Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz 3.5 pF Ratio between 2 elements 1 XN5501 Composite Transistors PT — Ta IC — VCE IB — VBE 60 500 1200 200 100 1000 140µA 40 120µA 100µA 30 80µA 20 60µA 40µA 10 600 400 200 0 40 80 120 160 0 0 2 4 6 8 10 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) IC — VBE IC — I B 240 0 Collector to emitter saturation voltage VCE(sat) (V) Collector current IC (mA) 25˚C 120 Ta=75˚C –25˚C 80 40 160 120 80 40 0 0 0.4 0.8 1.2 1.6 0 Base to emitter voltage VBE (V) 200 400 hFE — IC 600 1000 300 –25˚C 200 100 1 3 0.3 10 30 Collector current IC (mA) 100 25˚C 0.1 Ta=75˚C –25˚C 0.03 0.3 1 3 10 30 100 NV — IC 240 240 Noise voltage NV (mV) Transition frequency fT (MHz) 25˚C 0.3 1 Collector current IC (mA) VCB=10V Ta=25˚C Ta=75˚C 400 IC/IB=10 3 fT — I E VCE=10V 0 0.1 800 300 500 1.0 10 Base current IB (µA) 600 0.8 30 0.01 0.1 0 2.0 0.6 100 200 160 0.4 VCE(sat) — IC VCE=10V Ta=25˚C 200 0.2 Base to emitter voltage VBE (V) 240 VCE=10V Collector current IC (mA) 800 20µA 0 Forward current transfer ratio hFE Base current IB (µA) 300 0 2 VCE=10V Ta=25˚C 50 400 Collector current IC (mA) Total power dissipation PT (mW) Ta=25˚C IB=160µA 180 120 60 VCE=10V GV=80dB Function=FLAT 200 Ta=25˚C 160 Rg=100kΩ 120 80 22kΩ 4.7kΩ 40 0 –0.1 –0.3 –1 –3 –10 –30 Emitter current IE (mA) –100 0 10 20 30 50 100 200 300 500 1000 Collector current IC (µA)