LL48

R
LL48
SMALL SIGNAL SCHOTTKY DIODES
S E M I C O N D U C T O R
FEATURES
For general purpose applications
MiniMELF
These diodes features very low turn-on voltage and fast switching
These devices are protected by a PN junction guard ring
against excessive voltage, such as electrostatic discharges.
This diode is also available in the DO-35 case with type designation BAT48.
0.063(1.6)
0.055(1.4)
High temperature soldering guaranteed:260℃/10 seconds at terminals
Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
MECHANICAL DATA
0.019(0.48)
0.011(0.28)
0.142(3.6)
0.126(3.2)
Case: MiniMELF glass case(SOD-80)
Weight: Approx. 0.05 gram
ABSOLUTE RATINGS(LIMITING VALUES)
Repetitive Peak Reveres Voltage
Forward Continuous Current at TA=25 C
Repetitive Peak Forward Current at tp<1s, d < 0.5,
Surge forward current at tp <10ms ,
Power Dissipation at
TA=25 C
TA=25 C
TA=65 C
Junction temperature
Ambient Operating temperature Range
Storage Temperature Range
Dimensions in inches and (millimeters)
Symbols
Value
VRRM
IF
IFRM
IFSM
Ptot
TJ
TA
TSTG
40
Units
1
V
mA
1)
350
1)
7.5
330
A
A
mW
1)
1)
125
C
C
-65 to+125
-65 to+150
C
1) Valid provided that electrodes are kept at ambient temperature
ELECTRICAL CHARACTERISTICS
Symbols
Reverse Breakdown Voltage Tested with 100mA Pulses
Min.
V(BR)R
Typ.
Max.
Unis
V
40
Forward voltage
Pulse Test tp< 300ms, d < 2%
at IF=0.1mA,
at IF=10mA,
at IF=250mA
VF
VF
VF
0.25
0.45
0.90
V
V
V
Leakage current
pulse test tp < 300ms ,d <2%
at VR=10V
at VR=10V, TJ=60 C
at VR=20V
at VR=20V, TJ=60 C
at VR=40V
at VR=40V, TJ=60 C
IR
IR
IR
IR
IR
IR
2
15
5
25
25
50
mA
mA
mA
mA
mA
mA
Junction Capacitance at VR=1V ,f=1MHz
Thermal resistance junction to ambient Air
1) Valid provided that electrodes are kept at ambient temperature
JINAN JINGHENG ELECTRONICS CO., LTD.
CJ
RqJA
pF
2
300 1)
2-59
K/W
HTTP://WWW.JINGHENGGROUP.COM
RATINGS AND CHARACTERISTIC CURVES LL48
Figure 1. Forward current versus forward voltage
at different temperatures(typical values)
Figure 2. Forward current versus forward voltage
(typical values)
IF(mA)
10
3
10
2
IF(mA)
500
Tj= 25 C
400
300
10
Tamb=100 C
Tamb= 25 C
Tamb= -55 C
1
10
-1
10
-2
200
100
0
0.2
0.4
0.6
0.8
1
0
1.2
0.2
VF(V)
0.4
0.6
0.8
1
VF(V)
Figure 3.Reverse current versus ambient
temperatures
10
IR(mA)
3
90% confidence
VR=20V
10
2
max.
10
typ.
1
10
-1
10
-2
0
25
50
75
100
125
Tamb=( C)
JINAN JINGHENG ELECTRONICS CO., LTD.
2-60
HTTP://WWW.JINGHENGGROUP.COM
RATINGS AND CHARACTERISTIC CURVES LL48
Figure 4.Reverse current versus continuous
Reverse voltage(typical values)
10
IR(mA)
3
125 C
10
100 C
2
75 C
60 C
10
50 C
1
25 C
10
-1
10
-2
VR=(V)
0
10
30
20
40
Figure 5.Capacitance CJ versus reverse applied
voltage VR (typical values)
CJ(pF)
18
Tamb= 25 C
16
12
8
4
0
10
JINAN JINGHENG ELECTRONICS CO., LTD.
20
30
2-61
40
VR(V)
HTTP://WWW.JINGHENGGROUP.COM