BAT48 350mA Axial Leaded Schottky Barrier Diode Features · For general purpose applications · These diodes feature very low turn-on voltage and fast switching. These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges · This diode is also available in the Mini-MELF case with type designations LL48 · Pb / RoHS Free B A A C D DO-35 Mechanical Data · Case: DO-35 Glass Case · Weight: approx. 0.13g Dim Min Max A 25.40 ¾ B ¾ 4.00 C ¾ 0.60 D ¾ 2.00 All Dimensions in mm Maximum Ratings and Electrical Characteristics Parameter @ TA = 25°C unless otherwise specified Symbol Value Unit VRRM 40 V Repetitive Peak Reverse Voltage IF Continuous Forward Current 350 (1) mA Repetitive Peak Forward Current at tp < 1s, IFRM 1(1) A Forward Surge Current at tp < 10 ms, IFSM 7.5(1) A Power Dissipation ,Ta = 65 °C PD 330(1) Thermal Resistance Junction to Ambient Air RθJA TJ Junction Temperature Ambient Operating Temperature Range Ta TS Storage temperature range Parameter Reverse Breakdown Voltage Reverse Current Pulse Test tp <300µs , δ <2% 300 Test Condition Symbol V(BR)R IR Forward Voltage Pulse Test tp <300µs , δ <2% VF Diode Capacitance Cd IR = 100 µA (pulsed) VR = 10 V VR = 20 V VR = 40 V IF = 1mA IF = 10mA IF = 30mA IF = 100mA IF = 500mA VR = 1V, f = 1MHz Note: (1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature. 1 of 2 mW °C/W (1) 125 °C -65 to + 125 °C -65 to + 150 °C Min Typ Max Unit 40 - 12 2 5 25 0.30 0.40 0.50 0.75 0.90 - V µA V pF Typical Forward Characteristicss 500 1000 400 100 Forward Current , IF (mA) Power Dissipation , PD (mW) Admissible Power Dissipation vs. Ambient Temperature 300 200 10 1 0.1 100 0 0.01 0 100 200 0 Typical Reverse Characteristics 100 TJ = 60°C 10 1 TJ = 25°C 0.1 0 20 40 60 80 0.2 0.4 0.6 0.8 1.0 Forward Voltage , VF (V) Ambient Temperature , Ta (°C) Reverse Current , IR (µA) TJ = 25°C 100 Percent of Voltage , (%) 2of2 1.2