350mA Axial Leaded Schottky Barrier Diode

BAT48
350mA Axial Leaded Schottky Barrier Diode
Features
· For general purpose applications
· These diodes feature very low turn-on voltage and
fast switching. These devices are protected by a
PN junction guard ring against excessive voltage,
such as electrostatic discharges
· This diode is also available in the Mini-MELF case
with type designations LL48
· Pb / RoHS Free
B
A
A
C
D
DO-35
Mechanical Data
· Case: DO-35 Glass Case
· Weight: approx. 0.13g
Dim
Min
Max
A
25.40
¾
B
¾
4.00
C
¾
0.60
D
¾
2.00
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
Parameter
@ TA = 25°C unless otherwise specified
Symbol
Value
Unit
VRRM
40
V
Repetitive Peak Reverse Voltage
IF
Continuous Forward Current
350
(1)
mA
Repetitive Peak Forward Current at tp < 1s,
IFRM
1(1)
A
Forward Surge Current at tp < 10 ms,
IFSM
7.5(1)
A
Power Dissipation ,Ta = 65 °C
PD
330(1)
Thermal Resistance Junction to Ambient Air
RθJA
TJ
Junction Temperature
Ambient Operating Temperature Range
Ta
TS
Storage temperature range
Parameter
Reverse Breakdown Voltage
Reverse Current
Pulse Test tp <300µs , δ <2%
300
Test Condition
Symbol
V(BR)R
IR
Forward Voltage
Pulse Test tp <300µs , δ <2%
VF
Diode Capacitance
Cd
IR = 100 µA (pulsed)
VR = 10 V
VR = 20 V
VR = 40 V
IF = 1mA
IF = 10mA
IF = 30mA
IF = 100mA
IF = 500mA
VR = 1V, f = 1MHz
Note: (1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature.
1 of 2
mW
°C/W
(1)
125
°C
-65 to + 125
°C
-65 to + 150
°C
Min
Typ
Max
Unit
40
-
12
2
5
25
0.30
0.40
0.50
0.75
0.90
-
V
µA
V
pF
Typical Forward Characteristicss
500
1000
400
100
Forward Current , IF (mA)
Power Dissipation , PD (mW)
Admissible Power Dissipation
vs. Ambient Temperature
300
200
10
1
0.1
100
0
0.01
0
100
200
0
Typical Reverse Characteristics
100
TJ = 60°C
10
1
TJ = 25°C
0.1
0
20
40
60
80
0.2
0.4
0.6
0.8
1.0
Forward Voltage , VF (V)
Ambient Temperature , Ta (°C)
Reverse Current , IR (µA)
TJ = 25°C
100
Percent of Voltage , (%)
2of2
1.2