BL LS2012B0E1

 SMD LED LAMP
BL-LS2012B0E1
Features:
Ø
Ø
Ø
Ø
Ø
Ø
Ø
2.0mmx1.25mm SMD, 0.8mm THICKNESS
Mono-color type
Compatible with automatic placement equipment
WIDE VIEWING ANGLE.
IDEAL FOR BACKLIGHT AND INDICATOR.
PACKAGE: 4KPCS/REEL
RoHs Compliance
n
Electrical-optical characteristics: (Ta=25°C)
(Test Condition: IF=20mA)
Chip
Part Number
Emitted Color
λP
(nm)
Material
Luminous
Intensity
(Iv)
Unit:mcd
Forward
Voltage(VF)
Unit:V
Lens
Type
Typ
Max
Min.
Typ.
BL-LS2012B0E1HC
Red
GaP
700
2.2
2.7
0.3
0.9
BL-LS2012B0E1SRC
Super Red
AlGaAs
660
1.85
2.30
5
13
BL-LS2012B0E1LRC
Super Red
AlGaAs
660
1.85
2.30
10
28
BL-LS2012B0E1EC
Red
GaAsP
640
2.10
2.70
1
6
BL-LS2012B0E1YC
Yellow
GaAsP
583
2.15
2.70
1
6
BL-LS2012B0E1GC
Green
GaP
568
2.30
2.70
6
15
E
Y
n
Water
Clear
Viewi
ng
Angle
2?1/2
(deg)
130
Absolute maximum ratings (Ta=25°C)
Parameter
H
Forward Current IF
Power Dissipation Pd
Reverse Voltage VR
Peak Forward Current IPF
(Duty 1/10 @1KHZ)
Operation Temperature TOPR
Storage Temperature TSTG
Lead Soldering Temperature
T SOL
SR
LR
UR
G
Unit
mA
30
65
5
30
78
5
30
78
5
30
78
5
30
65
5
30
65
5
30
65
5
mW
100
100
100
100
100
100
100
mA
V
-30 to +80
-40 to +85
°C
Max.260±5 °C for 3 sec Max.
(1.6mm from the base of the epoxy bulb)
°C
APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS
REV NO: V.2
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°C
SMD LED LAMP
BL-LS2012B0E1
n
Electrical-optical characteristics: (Ta=25°C)
(Test Condition: IF=20mA)
Chip
Part Number
Emitted Color
λP
(n
m)
Material
Forward
Voltage(VF)
Unit:V
Lens
Type
Luminous
Intensity
(Iv)
Unit:mcd
Max
Min.
Typ.
Ultra Red
AlGaAs
655
2.10
2.50
22
55
BL-LS2012B0E1UHR
Ultra Red
AlGaAs
645
2.10
2.60
30
80
BL-LS2012B0E1UEC
Ultra Red
AlGaAs
630
2.10
2.50
30
70
BL-LS2012B0E1UHD
Ultra Red
AlGaAs
618
2.10
2.60
50
110
BL-LS2012B0E1UYO
Ultra Amber
AlGaInP
610
2.10
2.60
30
70
BL-LS2012B0E1UYC
Ultra Yellow
AlGaInP
593
2.10
2.60
25
75
BL-LS2012B0E1UGC
Ultra Green
AlGaInP
575
2.20
2.70
10
45
BL-LS2012B0E1PGC
Ultra Pure Green
InGaN
525
3.50
4.20
50
100
BL-LS2012B0E1BGC
Ultra
Green
InGaN
505
3.50
4.20
50
110
BL-LS2012B0E1DNB
Blue
InGaN
470
3.50
4.20
10
38
BL-LS2012B0E1UBC
Ultra Blue
InGaN
470
3.50
4.20
10
30
BL-LS2012B0E1UWC
Ultra White
InGaN
/
3.50
4.20
40
200
n
Bluish
ng
Typ
BL-LS2012B0E1UDR
Water
Clear
Viewi
Angle
2?1/2
(deg)
130
Absolute maximum ratings (Ta=25°C)
Parameter
UDR
Forward Current IF
Power Dissipation Pd
Reverse Voltage VR
Peak Forward Current IPF
(Duty 1/10 @1KHZ)
Operation Temperature TOPR
Storage Temperature TSTG
Lead Soldering Temperature
T SOL
UHR
UE
UHD
UYO
UY
UG
PG
BG
DNB
UB
UW
Unit
mA
30
78
5
30
78
5
30
78
5
30
78
5
30
78
5
30
78
5
30
78
5
30
78
5
30
78
5
30
78
5
30
78
5
30
78
5
mW
100
100
100
100
100
100
100
100
100
100
100
100
mA
V
-30 to +80
-40 to +85
°C
Max.260±5 °C for 3 sec Max.
(1.6mm from the base of the epoxy bulb)
°C
APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS
REV NO: V.2
Page 2 of 6
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EMAIL: [email protected] , [email protected]
°C
SMD LED LAMP
BL-LS2012B0E1
n
Package configuration & Internal circuit diagram
Notes:
1. All dimensions are in millimeters (inches)
2. Tolerance is ±0.25(0.01")unless otherwise noted.
3. Specifications are subject to change without notice.
APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS
REV NO: V.2
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SMD LED LAMP
BL-LS2012B0E1
n
Tape Specifications
Unit:mm
Tolerance:±0.1
4.00±0.10
2.00±0.05
1.75±0.10
Cathode mark
3.50±0.05
1.40±0.10
0.23±0.05
5
2.30±0.10
1.10±0.10
1.00±0.01
13.5±0.5
4.00±0.10
8.00±0.20
1.50+0.10/-0
PS
60+0.5/-0
178±1.0
9
9.0±0.5
Label sticking position
12.0±0.15
APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS
REV NO: V.2
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SMD LED LAMP
BL-LS2012B0E1
n
Typical electrical-optical characteristics curves:
(A)
1.0
(B)
(C)
(D)
(2)
(3)
(8)
(4)
(1) (6)
(5)
(9)
(10)
0.5
0
350
400
450
500
550
600
650
700
750
800
850
900
950
1000
Wavelength(nm)
RELATIVE INTENSITY Vs WAVELENGTH(? p )
(1) - GaAsP/GaAs 655nm/Red
(9) - GaAlAs 880nm
(2) - GaP 570nm/Yellow Green
(3) - GaAsP/GaP 585nm/Yellow
(10) - GaAs/GaAs & GaAlAs/GaAs 940nm
(A) - GaN/SiC 430nm/Blue
(4) - GaAsp/GaP 635nm/Orange & Hi-Eff Red
(5) - GaP 700nm/Bright Red
(B) - InGaN/SiC 470nm/Blue
(C) - InGaN/SiC 505nm/Ultra Green
(6) - GaAlAs/GaAs 660nm/Super Red
(D) - InGaAl/SiC 525nm/Ultra Green
(8) - GaAsP/GaP 610nm/Super Red
8
64 5
2 3
40
30
20
10
0
1.2
1.6
2.0
2.4
2.6
3.0
4.0
3.0
2.0
1.0
0
20
60
80
40
30
20
1
6
2,4,8,A
3
5
10
0
100
20
0.2
4
3
2
-20
-10
0
10
20
30
40
50
60
80
100
4
3
2
70
1
AMBIENT TEMPERATURE Ta(℃ )
60
30KHz
3KHz
300Hz
100KHz
10KHz 1KHz
100Hz
10
9
8
7
6
5
Ipeak M AX.
IDC MAX.
0.5
40
AMBIENT TEMPERATURE Ta(℃)
FORWARD CURRENT VS. AMBIENT
TEMPERATURE
3KHz
300KHz
1KHz
100KHz F-REFRESH RATE
10 10KHz
9
8
7
6
5
1
5
4
2
3
0.1
-30
40
FORWARD CURRENT (mA)
RELATIVE LUMINOUS
INTENSITY VS. FORWARD
CURRENT
Ipeak MAX.
IDC MAX.
REL ATIVE LUMIN OU S IN TENSITY
1
5
B
FORWARD VOLTAGE (Vf)
FORWARD CURRENT VS.
FORWARD VOLTAGE
3
2
50
1
FORWARD CURRENT(mA)
FORWARD CURRENT(mA)
RELATIVE LUMINOUS INTENSITY
1
50
1
10
100
1000
tp-PULSE DURATION uS
(1,2,3,4,6,8,B.D.J.K)
10,000
1
1
10
100
1000
tp-PULSE DURATION uS
(5)
NOTE:25℃ free air temperature unless otherwise specified
APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS
REV NO: V.2
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10,000
SMD LED LAMP
BL-LS2012B0E1
n
Packing and weighting
4000pcs/Reel
1 Reel/Bag
Maximum
10
Bags/Inner Box
3 Inner
Box/Box
9 Inner
Box/Box
APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS
REV NO: V.2
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