PANASONIC ON2170

Reflective Photosensors (Photo Reflectors)
CNB1302
Reflective Photosensor
Unit : mm
Overview
9.0±1.0
CNB1302 is a small, thin reflective photosensor consisting of a
high efficiency GaAs infrared light emitting diode which is integrated
with a high sensitivity Si phototransistor in a single resin package.
2.0±0.2
Mark for indicating
anode side
C0.5
1
3
Chip
center
2.7±0.2
0.4
Features
9.0±1.0
Visible light cutoff resin is used
Fast response : tr, tf = 20µs (typ.)
4-0.7
2.0±0.2
Ultraminiature, thin type : 2.7 × 3.4 mm (height : 1.5 mm)
4-0.5
±0.1
Easy interface for control circuit
2
0.5
0.15
4
Applications
Control of motor and other rotary units
Detection of position and edge
Detection of paper, film and cloth
3.4±0.3
,,
,,
1.5±0.2
1.8
1
Start, end mark detection of magnetic tape
2 3
4
Pin connection
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Symbol Ratings
Reverse voltage (DC)
Unit
VR
3
V
IF
50
mA
PD*1
75
mW
IC
20
mA
Output (Photo Collector to emitter voltage
transistor)
Emitter to collector voltage
VCEO
30
V
VECO
5
V
Collector power dissipation
PC
*2
50
mW
Operating ambient temperature
Topr
–25 to +85
˚C
Storage temperature
Tstg –30 to +100
˚C
Input (Light
Forward current (DC)
emitting diode)
Power dissipation
Collector current
Temperature
*1
Input power derating ratio is
1.0 mW/˚C at Ta ≥ 25˚C.
*2 Output power derating ratio is
0.67 mW/˚C at Ta ≥ 25˚C.
Electrical Characteristics (Ta = 25˚C)
Paramwter
Symbol
Forward voltage (DC)
Input
Reverse current (DC)
characteristics
Capacitance between terminals
Output characteristics Collector cutoff current
typ
max
Unit
VF
IF = 50mA
1.3
1.5
V
IR
VR = 3V
0.01
10
µA
Ct
VR = 0V, f = 1MHz
ICEO
Conditions
min
30
VCE = 10V
IC*1, *2 VCC = 5V, IF = 10mA, RL = 100Ω, d = 1mm
Collector current
Leakage current
Transfer
characteristics Response time
ID
90
VCC = 5V, IF = 10mA, RL = 100Ω
tr*3 , tf*4 VCC = 5V, IC = 0.1mA, RL = 100Ω
Class
Q
R
S
IC (µA)
90 to 220
180 to 440
360 to 880
200
nA
µs
0.4
*2 Output
classifications
nA
µA
V
,,,
,,,
,,,
,,,
,,,,
C
200
880
20
Collector to emitter saturation voltage VCE(sat) IF = 20mA, IC = 0.1mA
*1 I
pF
current measurement method
Evaporated Al
Glass plate
(t = 1mm)
required for the output current to increase from 10% to 90% of its final value I
F
*4 Time required for the output current to decrease from 90% to 10% of its initial value
IC RL
,,
,
*3 Time
VCC
1
CNB1302
Reflective Photosensors (Photo Reflectors)
IF , IC — Ta
IF — VF
1.6
Ta = 25˚C
30
IC
10
VF (V)
IF (mA)
40
20
IF = 50mA
50
IF
40
Forward voltage
50
30
20
20
40
60
80
0
100
0
0.4
10mA
1mA
0.8
0.4
0.8
1.2
1.6
2.0
0
– 40 – 20
2.4
Forward voltage VF (V)
IC — IF
0
IC — VCE
800
600
VCE = 5V
Ta = 25˚C
RL = 100Ω
d = 1mm
200
60
80
100
IC — Ta
d = 1mm
Ta = 25˚C
VCC = 5V
IF = 10mA
RL = 100Ω
IF = 20mA
IC (%)
IC (µA)
Collector current
400
40
160
500
600
20
Ambient temperature Ta (˚C )
120
400
Relative output current
0
Ambient temperature Ta (˚C )
IC (µA)
1.2
10
0
– 25
Collector current
VF — Ta
60
Forward current
Forward current, collector current
IF , IC (mA)
60
15mA
300
10mA
200
8mA
6mA
100
80
40
4mA
2mA
8
16
0
24
Forward current IF (mA)
0
2
4
6
Collector to emitter voltage VCE (V)
ICEO — Ta
tr , tf — IC
10 –2
10 –3
10 –4
– 40 – 20
0
20
40
60
80
Ambient temperature Ta (˚C )
100
60
80
100
VCC = 5V
Ta = 25˚C
IF = 10mA
VCC = 5V
Ta = 25˚C
: tr
: tf
10 2
RL = 2kΩ
1kΩ
10
100Ω
1
10 –1
10 –2
40
IC — d
10 –1
1
Collector current IC (mA)
10
IC (%)
tr , tf (µs)
Rise time , fall time
ICEO (µA)
Dark current
10 –1
20
100
VCE = 10V
1
0
Ambient temperature Ta (˚C )
10 3
10
2
0
– 40 – 20
8
80
60
,,
,
0
Relative output current
0
d
40
20
0
0
2
4
6
Distance d (mm)
8
10