PANASONIC PNZ109F

Phototransistors
PNZ109F
Silicon NPN Phototransistor
Unit : mm
ø4.6±0.15
Features
Flat window design which is suited to optical systems
Built-in filter to cutoff visible light for reducing ambient light noise
Peak sensitivity wavelength matched with infrared light emitting
devices : λp = 900 nm (typ.)
12.7 min.
4.5±0.2
For optical control systems
Glass window
3-ø0.45±0.05
2.54±0.25
Fast response : tr = 8 µs (typ.)
0
1.
.2
±0
45±
0±
0.
15
Long lifetime, high reliability
1.
3˚
3
2 1
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Symbol
Ratings
Unit
Collector to emitter voltage
VCEO
20
V
Collector to base voltage
VCBO
30
V
Emitter to collector voltage
VECO
3
V
Emitter to base voltage
VEBO
5
V
Collector current
IC
30
mA
Collector power dissipation
PC
150
mW
Operating ambient temperature
Topr
–25 to +85
˚C
Storage temperature
Tstg
–30 to +100
˚C
1: Emitter
2: Base
3: Collector
ø5.75 max.
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Symbol
Dark current
ICEO
Collector photo current
Peak sensitivity wave length
Acceptance half angle
*2
VCE = 10V, L = 100
lx*1
min
typ
max
Unit
0.05
2
µA
0.3
mA
λP
VCE = 10V
900
nm
θ
Measured from the optical axis to the half power point
40
deg.
8
µs
Rise time
tr*2
VCC = 10V, ICE(L) = 1mA
Fall time
tf*2
RL = 100Ω
Collector saturation voltage
*1
ICE(L)
Conditions
VCE = 10V
VCE(sat)
µs
9
ICE(L) = 1mA, L = 1000 lx*1
0.3
0.6
V
Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.
Switching time measurement circuit
Sig.IN
VCC
(Input pulse)
Sig.OUT
RL
,,,,
,,
50Ω
(Output pulse)
90%
10%
td
tr
tf
td : Delay time
tr : Rise time (Time required for the collector photo current to
increase from 10% to 90% of its final value)
tf : Fall time (Time required for the collector photo current to
decrease from 90% to 10% of its initial value)
1
Phototransistors
PNZ109F
PC — Ta
ICE(L) — VCE
120
80
40
20
40
60
Ambient temperature
80
800 lx
700 lx
600 lx
8
500 lx
6
400 lx
4
300 lx
200 lx
2
0
100
900 lx
L = 1000 lx
Ta (˚C )
0
4
8
12
ICEO — Ta
10 –2
Ambient temperature
80
Ta (˚C )
10˚
50
40
30
20
80
80
60
40
50˚
60˚
800
900
1000 1100 1200
tf — ICE(L)
VCC = 10V
Ta = 25˚C
VCC = 10V
Ta = 25˚C
10 4
10 3
10 2
RL = 1kΩ
500Ω
10
10 2
RL = 1kΩ
500Ω
10
100Ω
70˚
80˚
700
Wavelength λ (nm)
Ta (˚C )
tf (µs)
40˚
10 4
VCE = 10V
Ta = 25˚C
0
600
120
10 3
tr (µs)
60
30˚
10 3
L (lx)
Spectral sensitivity characteristics
tr — ICE(L)
20˚
Rise time
70
40
10 4
Relative sensitivity S (%)
90
80
0
Ambient temperature
100
10 2
10
20
10 –1
– 40
100
1
100
1
Directivity characteristics
0˚
10 –1
Illuminance
Relative sensitivity
10 –1
60
1
VCE (V)
S (%)
ICE(L) (mA)
1
Collector photo current
ICEO (µA)
10
40
10
10 –2
VCE = 10V
L = 100 lx
T = 2856K
VCE = 10V
20
10 2
ICE(L) — Ta
10
0
16
Collector to emitter voltage
10 2
10 –3
– 20
100 lx
50 lx
10 lx
20
24
ICE(L) (mA)
10
VCE = 10V
Ta = 25˚C
T = 2856K
10 3
Fall time
0
Ta = 25˚C
T = 2856K
Collector photo current
ICE(L) (mA)
160
0
– 20
Dark current
ICE(L) — L
12
Collector photo current
Collector power dissipation
PC (mW)
200
100Ω
1
1
90˚
10 –1
10 –2
10 –1
1
Collector photo current
2
10
10 2
ICE(L) (mA)
10 –1
10 –2
10 –1
1
Collector photo current
10
10 2
ICE(L) (mA)