Phototransistors PNZ109F Silicon NPN Phototransistor Unit : mm ø4.6±0.15 Features Flat window design which is suited to optical systems Built-in filter to cutoff visible light for reducing ambient light noise Peak sensitivity wavelength matched with infrared light emitting devices : λp = 900 nm (typ.) 12.7 min. 4.5±0.2 For optical control systems Glass window 3-ø0.45±0.05 2.54±0.25 Fast response : tr = 8 µs (typ.) 0 1. .2 ±0 45± 0± 0. 15 Long lifetime, high reliability 1. 3˚ 3 2 1 Absolute Maximum Ratings (Ta = 25˚C) Parameter Symbol Ratings Unit Collector to emitter voltage VCEO 20 V Collector to base voltage VCBO 30 V Emitter to collector voltage VECO 3 V Emitter to base voltage VEBO 5 V Collector current IC 30 mA Collector power dissipation PC 150 mW Operating ambient temperature Topr –25 to +85 ˚C Storage temperature Tstg –30 to +100 ˚C 1: Emitter 2: Base 3: Collector ø5.75 max. Electro-Optical Characteristics (Ta = 25˚C) Parameter Symbol Dark current ICEO Collector photo current Peak sensitivity wave length Acceptance half angle *2 VCE = 10V, L = 100 lx*1 min typ max Unit 0.05 2 µA 0.3 mA λP VCE = 10V 900 nm θ Measured from the optical axis to the half power point 40 deg. 8 µs Rise time tr*2 VCC = 10V, ICE(L) = 1mA Fall time tf*2 RL = 100Ω Collector saturation voltage *1 ICE(L) Conditions VCE = 10V VCE(sat) µs 9 ICE(L) = 1mA, L = 1000 lx*1 0.3 0.6 V Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source. Switching time measurement circuit Sig.IN VCC (Input pulse) Sig.OUT RL ,,,, ,, 50Ω (Output pulse) 90% 10% td tr tf td : Delay time tr : Rise time (Time required for the collector photo current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector photo current to decrease from 90% to 10% of its initial value) 1 Phototransistors PNZ109F PC — Ta ICE(L) — VCE 120 80 40 20 40 60 Ambient temperature 80 800 lx 700 lx 600 lx 8 500 lx 6 400 lx 4 300 lx 200 lx 2 0 100 900 lx L = 1000 lx Ta (˚C ) 0 4 8 12 ICEO — Ta 10 –2 Ambient temperature 80 Ta (˚C ) 10˚ 50 40 30 20 80 80 60 40 50˚ 60˚ 800 900 1000 1100 1200 tf — ICE(L) VCC = 10V Ta = 25˚C VCC = 10V Ta = 25˚C 10 4 10 3 10 2 RL = 1kΩ 500Ω 10 10 2 RL = 1kΩ 500Ω 10 100Ω 70˚ 80˚ 700 Wavelength λ (nm) Ta (˚C ) tf (µs) 40˚ 10 4 VCE = 10V Ta = 25˚C 0 600 120 10 3 tr (µs) 60 30˚ 10 3 L (lx) Spectral sensitivity characteristics tr — ICE(L) 20˚ Rise time 70 40 10 4 Relative sensitivity S (%) 90 80 0 Ambient temperature 100 10 2 10 20 10 –1 – 40 100 1 100 1 Directivity characteristics 0˚ 10 –1 Illuminance Relative sensitivity 10 –1 60 1 VCE (V) S (%) ICE(L) (mA) 1 Collector photo current ICEO (µA) 10 40 10 10 –2 VCE = 10V L = 100 lx T = 2856K VCE = 10V 20 10 2 ICE(L) — Ta 10 0 16 Collector to emitter voltage 10 2 10 –3 – 20 100 lx 50 lx 10 lx 20 24 ICE(L) (mA) 10 VCE = 10V Ta = 25˚C T = 2856K 10 3 Fall time 0 Ta = 25˚C T = 2856K Collector photo current ICE(L) (mA) 160 0 – 20 Dark current ICE(L) — L 12 Collector photo current Collector power dissipation PC (mW) 200 100Ω 1 1 90˚ 10 –1 10 –2 10 –1 1 Collector photo current 2 10 10 2 ICE(L) (mA) 10 –1 10 –2 10 –1 1 Collector photo current 10 10 2 ICE(L) (mA)