CO M PL IA NT TICC107M *R oH S SILICON CONTROLLED RECTIFIER TICC107M Silicon Controlled Rectifier 1 A RMS On-State Current Glass Passivated Wafer 600 V Off-State Voltage IGT 50 µA min, 200 µA max. SOT-223 Package (Top View) Description The TICC107M is a sensitive gate SCR designed for switching loads up to 1 Amp RMS. With a maximum gate trigger current of 200 µA the TICC107M can be controlled from very simple logic circuits and analog driver circuits. Applications for this device include capacitive discharge flash guns, ignitors and standby power supplies. (Cathode) K 1 (Anode) A 2 (Gate) G 3 A (Anode) 4 MD-SOT223-001-a Device Symbol E T E L O S B O A G SD8XAA K How to Order Device Package TICC107M SOT-223 Carrier Order As Marking Code Standard Quantity Embossed Tape Reeled TICC107MR-S 107M 2500 Absolute Maximum Ratings over Operating Junction Temperature (Unless Otherwise Noted) Symbol Value Unit Repetitive peak off-state voltage (see Note 1) Rating VDRM 600 V Repetitive peak reverse voltage VRRM 600 V RMS on-state current at (or below) 55 °C ambient temperature, 180 ° conduction angle (see Note 2) IT(RMS) 1 A Non-repetitive peak on-state current at (or below) 25 °C ambient temperature (see Note 3) ITSM 22.5 A Critical rate of rise of on-state current at 110 °C (see Note 4) di/dt 100 A/µs Peak positive gate current (pulse width ≤ 300 µs) IGM 0.2 A Junction temperature TJ -40 to +110 °C Tstg -40 to +125 °C Storage temperature range NOTES: 1. 2. 3. 4. This value applies when the gate-cathode resistance R GK = 1 kΩ. Device mounted to achieve a junction to ambient thermal resistance of 70 °C/W. This value applies for one 50 Hz half-sine-wave. The surge may be repeated when the device returns to its initial conditions . Rate of rise of on-state current after triggering with IG = 10 mA, diG/dt = 1 A/µs . *RoHS Directive 2002/95/EC Jan 27 2003 including Annex APRIL 2005 — REVISED JANUARY 2007 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. 1 TICC107M Silicon Controlled Rectifier Electrical Characteristics, TA = 25 °C (Unless Otherwise Noted) Parameter Test Conditions Typ Max Unit Repetitive peak off-state current VD = VDRM, RGK = 1 kΩ 20 µA IRRM Repetitive peak reverse current VR = VRRM, IG = 0 200 µA µA IGT Gate trigger current VAA = 12 V, RL = 100 Ω, tp(g) ≥ 20 µs 50 200 VGT Gate trigger voltage VAA = 12 V, RL = 100 Ω, tp(g) ≥ 20 µs 0.4 1 V IH Holding current VAA = 12 V, Initiating IT = 10 mA 2 mA On-state voltage IT = 2 A (see Note 5) 1.4 V VT NOTE: 5. This parameter must be measured using pulse techniques, tp = 1 ms, duty cycle ≤ 2 %, with voltage sensing-contacts separate from the current carrying contacts. Thermal Characteristics E T E L O S B O Parameter RθJA NOTE 2 Min IDRM Min Junction to ambient thermal resistance (see Note 6) Typ 70 Max Unit °C/W 6. FR4 test board (single-sided), 1.6mm thickness. Terminal 4 (tab) connected to copper of area 5 cm2, thickness 35 µm. Test board mounted vertically. APRIL 2005 — REVISED JANUARY 2007 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. Bourns Sales Offices Region Phone Fax The Americas: Europe: Asia-Pacific: +1-951-781-5500 +41-41-7685555 +886-2-25624117 +1-951-781-5700 +41-41-7685510 +886-2-25624116 Phone Fax +1-951-781-5500 +41-41-7685555 +886-2-25624117 +1-951-781-5700 +41-41-7685510 +886-2-25624116 E T E L O S B O Technical Assistance Region The Americas: Europe: Asia-Pacific: www.bourns.com Bourns® products are available through an extensive network of manufacturer’s representatives, agents and distributors. To obtain technical applications assistance, a quotation, or to place an order, contact a Bourns representative in your area. Reliable Electronic Solutions “TISP” is a trademark of Bourns, Ltd., a Bourns Company, and is Registered in U.S. Patent and Trademark Office. “Bourns” is a registered trademark of Bourns, Inc. in the U.S. and other countries.