H V SC AV ER OM AI SIO PL LA N IA BL S NT E TISP8250D *R o UNIDIRECTIONAL P-GATE THYRISTOR OVERVOLTAGE AND OVERCURRENT PROTECTOR TISP8250D Overvoltage and Overcurrent Protector Telecommunication System 30 A 10/1000 Protector 8-SOIC Package (Top View) Ion-Implanted Breakdown Region - Precise and Stable Voltage G 1 8 A V(BO) NC 2 7 A V V NC 3 6 A 250 340 K 4 5 A VDRM Device Name TISP8250D MD8XAAA NC - No internal connection Rated for International Surge Wave Shapes IPPSM Wave Shape Standard 2/10 GR-1089-CORE 75 0.5/700 CNET I 31-24 40 A 10/700 ITU-T K.20/21 40 10/1000 GR-1089-CORE 30 Device Symbol A Functional Replacement for TPP25011 G .............................................. UL Recognized Component SD8XAA K Description The TISP8250D is a P-gate reverse-blocking thyristor (SCR) designed for the protection of telecommunications equipment against overvoltages and overcurrents on the telephone line caused by lightning, a.c. power contact and induction. The fixed voltage and current triggered modes make the TISP8250D particularly suitable for the protection of ungrounded customer premise equipment. Connected across the d.c. side of a telephone set polarity bridge, in fixed voltage mode these devices can protect the ringer in the on-hook condition. In an off-hook condition, either the fixed voltage or current triggered modes can protect the following telephone electronics. Without external gate activation, the TISP8250D is a fixed voltage protector. The maximum working voltage without clipping is 250 V and the protection voltage is 340 V. Lower values of protection voltage may be set by connecting an avalanche breakdown diode of less than 250 V between the TISP8250D gate and anode (see Figure 2.) By connecting a small value resistor in series with the line conductor and connecting the TISP8250D gate cathode terminals in parallel with the resistor, conductor overcurrents can gate trigger the TISP8250D into conduction. Overvoltages are initially clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. Overcurrents develop sufficient voltage across the external gate-cathode resistor to trigger the device into a low-voltage on state. This low-voltage on state causes the current resulting from the overstress to be safely diverted through the device. The high crowbar holding current prevents d.c. latchup as the diverted current subsides. How To Order Device TISP8250D Package 8-SOIC Carrier For Standard Termination Finish Order As For Lead Free Termination Finish Order As Embossed Tape Reeled TISP8250DR TISP8250DR-S Tube TISP8250D TISP8250D-S *RoHS Directive 2002/95/EC Jan 27 2003 including Annex JULY 2000 - REVISED MARCH 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. Marking Code Standard Quantity 2500 8250 1500 TISP8250D Overvoltage and Overcurrent Protector Absolute Maximum Ratings, TA = 25 °C (Unless Otherwise Noted) Rating Repetitive peak off-state voltage (see Note 1) Symbol Value Unit VDRM 250 V IPPSM 75 40 40 40 30 A ITSM 5 3.5 0.7 A TJ -40 to +150 °C Tstg -65 to +150 °C Non-repetitive peak impulse current (see Notes 2, 3 and 4) 2/10 µs (Telcordia GR-1089-CORE, 2/10 µs waveshape) 0.2/310 (CNET I 31-24, 0.5/700 µs waveshape) 5/310 µs (ITU-T K.20/21, 10/700 µs voltage waveshape) 5/310 µs (FTZ R12, 10/700 µs voltage waveshape) 10/1000 µs (Telcordia GR-1089-CORE, 10/1000 µs voltage waveshape) Non-repetitive peak on-state current, 50 Hz (see Notes 2, 3 and 4) 10 ms half sine wave 1s rectified sine wave 1000 s rectified sine wave Junction temperature Storage temperature range NOTES: 1. 2. 3. 4. For voltage values at lower temperatures, derate at 0.13 %/°C. Initially the device must be in thermal equilibrium, with TJ = 25 °C. The surge may be repeated after the device returns to its initial conditions. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A printed wiring track widths. Derate current values at -0.61 %/°C for ambient temperatures above 25 °C. Electrical Characteristics, TA = 25 °C (Unless Otherwise Noted) Parameter Test Conditions Min Typ Max Unit TA = 25 °C TA = 85 °C IDRM Repetitive peak off-state current V(BO) Breakover voltage dv/dt = 250 V/ms, RSOURCE = 300 Ω I(BO) Breakover current dv/dt = 250 V/ms, RSOURCE = 300 Ω 15 VD = VDRM IH Holding current IT = 5 A, di/dt = -30 mA/ms 180 VGK Gate-cathode voltage IG = 30 mA 0.6 IGT Gate trigger current VAK = 100 V ID Off-state current CO Off-state capacitance VD = 60 V f = 1 MHz, Vd = 1 V rms, VD = 5 V 5 10 µA 340 V 200 mA mA 1.2 V 40 mA 5 µA 100 pF Thermal Characteristics, TA = 25 °C (Unless Otherwise Noted) Parameter RθJA NOTE Junction to ambient thermal resistance Test Conditions EIA/JESD51-3 PCB, IT = ITSM(1000) (see Note 5) Min Typ Max Unit 170 °C/W 5. EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5A rated printed wiring track widths. JULY 2000 - REVISED MARCH 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP8250D Overvoltage and Overcurrent Protector Parameter Measurement Information +i Quadrant I Anode Positive Switching Characteristic V(BO) IH I(BO) ID -v IDRM VD +v VDRM Quadrant III Anode Negative Reverse Characteristic PM8XAAA -i Figure 1. Voltage-Current Characteristic for A and K Terminals All Measurements are Referenced to the K Terminal Avalanche diode V(BR) < 250 V A TISP8250D G K AI8XACAa Figure 2. Overvoltage Protection Circuit JULY 2000 - REVISED MARCH 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. 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