SR820

SR820 THRU SR8200(SINGLE CHIP)
R
SCHOTTKY BARRIER RECTIFIER
Reverse Voltage - 20 to 200 Volts
Forward Current - 8.0Amperes
S E M I C O N D U C T O R
FEATURES
TO-252
Plastic package has Underwriters Laboratory Flammability Classification 94V-0
Metal silicon junction ,majority carrier conduction
Guard ring for overvoltage protection
(DPAK)
J
SR F
82
0
Low power loss ,high efficiency
High current capability ,Low forward voltage drop
Single rectifier construction
0.265(6.73)
High surge capability
0.215(5.46)
For use in low voltage ,high frequency inverters,
0.205(5.21)
0.104(2.65)
0.244(6.20)
0.085(2.15)
0.023(0.58)
0.017(0.42)
free wheeling ,and polarity protection applications
High temperature soldering guaranteed:260 C/10 seconds,
0.050(1.27)
0.25"(6.35mm)from case
0.245(6.22)
Component in accordance to RoHS 2002/95/EC and
0.220(5.60)
0.035(0.88)
0.403(10.24)
1
K
0.354(9.00)
2
WEEE 2002/96/EC
MECHANICAL DATA
0.039(1.00)
MIN.
0.094(2.40)
Case: JEDEC TO-252 molded plastic body
0.023(0.58)
0.017(0.42)
0.026(0.66)
0.084(2.14)
0.018(0.46)
Terminals: Solderable per MIL-STD-202,method 208
Dimensions in inches and (milimeters)
Polarity: As marked
Mounting Position: Any
Weight: 0.014ounce, 0.4 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Ratings at 25 C ambient temperature unless otherwise specified ,Single phase ,half wave ,resistive or inductive
load. For capacitive load,derate by 20%.)
Symbols
SR
880
SR
8100
SR
8150
60
80
100
150
200
42
56
70
105
140
60
80
100
150
200
SR
820
SR
830
SR
840
SR
850
SR
860
20
30
40
50
14
21
28
35
20
30
40
50
SR
8200
Units
Maximum DC blocking voltage
VRRM
VRMS
VDC
Maximum average forward rectified current
(see Fig.1)
I(AV)
8.0
Amps
Peak forward surge current 8.3ms single half
sine-wave superimposed on rated load
(JEDEC method)
IFSM
150.0
Amps
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum instantaneous forward voltage
at 8.0 A(Notes 1 )
Maximum instantaneous reverse
current at rated DC blocking
voltage(Notes 1)
T A =25 C
T A =125 C
VF
IR
Typical thermal resistance (Notes 2)
R
Operating junction temperature range
TJ
TSTG
Storage temperature range
Notes: 1.Pulse test: 300
0.60
0.85
0.75
0.90
0.95
0.2
15
JC
50
mA
2.5
C/W
C
-65 to+150
C
s pulse width,1% duty cycle
1-70
Volts
-65 to+150
2.Thermal resistance from junction to case
JINAN JINGHENG ELECTRONICS CO., LTD.
Volts
Volts
Volts
HTTP://WWW.JINGHENGGROUP.COM
RATINGS AND CHARACTERISTIC CURVES SR820 THRU SR8200(SINGLE CHIP)
FIG.2-TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
40
10
INSTANTANEOUS FORWARD CURRENT( AMPERES)
AVERAGE FORWARD CURRENT AMPERES
FIG.1-FORWARD CURRENT DERATING CURVE
8.0
6.0
4.0
SINGLE PHASE
HALF WAVE 50Hz
2.0
INDUCTIVE OR
RESISTIVE LOAD
0
0
50
100
150
LEAD TEMPERATURE ( C)
FIG.4-TYPICAL JUNCTION CAPACITANCE
SR820-SR840
10
SR850-SR8200
1.0
TJ=25 C
PULSE WIDTH=300 S
1% DUTY CYCLE
0.1
4000
0.2
CAPACITANCE(pF)
0.3
0.4
0.5
0.6
0.7
0.8
SR850-SR8200
2000
INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
SR820-SR840
1000
FIG.3-TYPICAL REVERSE CHARACTERISTICS
10
200
TC=150 C
100
0.1
0.4
1.0
10
40 60
100
INSTANTANEOUS REVERSE CURRENT
(mA)
REVERSE VOLTAGE (VOLTS)
FIG.5-MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
PEAK FORWARD SURGE
CURRENT(AMPERES)
150
145
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
140
135
TC=125 C
1.0
TC=75 C
0.1
TC=25 C
0.01
130
SR820-SR840
SR850-SR8200
125
1.0
2.0
5.0
10
20
50
0.001
100
20
40
60
80
100
120
140
NUMBER OF CYCLES AT 60Hz
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
JINAN JINGHENG ELECTRONICS CO., LTD.
1-71
HTTP://WWW.JINGHENGGROUP.COM
0.9
1