Stand-Alone Linear Li-Ion / Li-Polymer Charge Management Controller Data Sheet

MCP73833/4
Stand-Alone Linear Li-Ion / Li-Polymer Charge
Management Controller
Features
Description
• Complete Linear Charge Management Controller
- Integrated Pass Transistor
- Integrated Current Sense
- Integrated Reverse Discharge Protection
• Constant Current / Constant Voltage Operation
with Thermal Regulation
• High Accuracy Preset Voltage Regulation:
- 4.2V, 4.35V, 4.4V, or 4.5V, + 0.75%
• Programmable Charge Current: 1A Maximum
• Preconditioning of Deeply Depleted Cells
- Selectable Current Ratio
- Selectable Voltage Threshold
• Automatic End-of-Charge Control
- Selectable Current Threshold
- Selectable Safety Time Period
• Automatic Recharge
- Selectable Voltage Threshold
• Two Charge Status Outputs
• Cell Temperature Monitor
• Low-Dropout Linear Regulator Mode
• Automatic Power-Down when Input Power
Removed
• Under Voltage Lockout
• Numerous Selectable Options Available for a
Variety of Applications:
- Refer to Section 1.0 “Electrical
Characteristics” for Selectable Options
- Refer to the Product Identification System for
Standard Options
• Available Packages:
- DFN-10 (3 mm x 3 mm)
- MSOP-10
The MCP73833/4 is a highly advanced linear charge
management controller for use in space-limited, cost
sensitive applications. The MCP73833/4 is available in
a 10-Lead, 3 mm x 3 mm DFN package or a 10-Lead,
MSOP package. Along with its small physical size, the
low number of external components required makes
the MCP73833/4 ideally suited for portable
applications. For applications charging from a USB
port, the MCP73833/4 can adhere to all the
specifications governing the USB power bus.
The MCP73833/4 employs a constant current/constant
voltage charge algorithm with selectable preconditioning and charge termination. The constant voltage
regulation is fixed with four available options: 4.20V,
4.35V, 4.40V, or 4.50V, to accomodate new, emerging
battery charging requirements. The constant current
value is set with one external resistor. The MCP73833/
4 limits the charge current based on die temperature
during high power or high ambient conditions. This
thermal regulation optimizes the charge cycle time
while maintaining device reliability.
Several options are available for the preconditioning
threshold, preconditioning current value, charge
termination value, and automatic recharge threshold.
The preconditioning value and charge termination
value are set as a ratio, or percentage, of the
programmed constant current value. Preconditioning
can be set to 100%. Refer to Section 1.0 “Electrical
Characteristics” for available options and the
“Product Indentification System” for standard
options.
The MCP73833/4 is fully specified over the ambient
temperature range of -40°C to +85°C.
Package Types
DFN-10
VDD 1
VDD 2
Applications
•
•
•
•
•
•
•
Lithium-Ion / Lithium-Polymer Battery Chargers
Personal Data Assistants
Cellular Telephones
Digital Cameras
MP3 Players
Bluetooth Headsets
USB Chargers
© 2009 Microchip Technology Inc.
STAT1 3
STAT2 4
VSS 5
MSOP-10
VDD
1
10 VBAT
EP
11
9 VBAT
8 THERM
7 PG(TE)
6 PROG
10
VBAT
VDD
2
9
VBAT
STAT1
3
8
THERM
STAT2
4
7
PG(TE)
VSS
5
6
PROG
DS22005B-page 1
MCP73833/4
Typical Application
1A Li-Ion Battery Charger
1,2 V
DD
VIN
VBAT
9,10
1 µF
1 µF
3
470Ω
4
470Ω
470Ω
STAT1 THERM
STAT2
7 PG
PROG
VSS
+ Single
- Li-Ion
Cell
8
6
5
1 kΩ
T 10 kΩ
MCP73833
Functional Block Diagram
VDD
Direction
Control
10 µA
VBAT
6 µA
CURRENT
+ LIMIT
-
G=0.001
1 kΩ
G=0.001
PROG
Reference
Generator
+
-
111 kΩ
VREF (1.21V)
310 kΩ
72.7 kΩ
CA
10 kΩ
+
-
PRECONDITION
470.6 kΩ
6 µA
+
-
6 kΩ
+
-
48 kΩ
TERMINATIO N
CHARG E
+
-
157.3 kΩ
VA
50 µA
+
-
175 kΩ
+
-
54 kΩ
VSS
+
-
121 kΩ
470.6kΩ
THERM
+
+
-
1 MΩ
DS22005B-page 2
SHDN
LDO
UVLO
Charge
Control,
Timer,
and
Status
Logic
STAT1
STAT2
PG (TE)
HTVT
LTVT
121 kΩ
© 2009 Microchip Technology Inc.
MCP73833/4
1.0
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings
VDD........................................................................ 7.0V
All Inputs and Outputs w.r.t. VSS .....-0.3 to (VDD+0.3)V
*Notice: Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of
the device at those or any other conditions above those
indicated in the operational listings of this specification
is not implied. Exposure to maximum rating conditions
for extended periods may affect device reliability.
Maximum Junction Temperature, TJ . Internally Limited
Storage temperature .......................... -65°C to +150°C
ESD protection on all pins:
Human Body Model (HBM)
(1.5 kΩ in Series with 100 pF)............................... ≥ 4 kV
Machine Model (MM)
(200 pF, No Series Resistance) ........................... 300V
DC CHARACTERISTICS
Electrical Specifications: Unless otherwise specified, all limits apply for VDD= [VREG(Typical)+0.3V] to 6V, TA=-40°C to 85°C.
Typical values are at +25°C, VDD= [VREG(Typical)+1.0V]
Parameters
Sym
Min
Typ
Max
Units
Conditions
Supply Input
Supply Voltage
Supply Current
VDD
ISS
3.75
—
6
V
Charging
VREG(Typical)+0.3V
—
6
V
Charge Complete, Standby
—
2000
3000
µA
Charging
—
150
300
µA
Charge Complete
—
100
300
µA
Standby (No Battery or PROG
Floating)
—
50
100
µA
Shutdown (VDD < VBAT, or
VDD < VSTOP)
UVLO Start Threshold
VSTART
3.4
3.55
3.7
V
VDD Low-to-High
UVLO Stop Threshold
VSTOP
3.3
3.45
3.6
V
VDD High-to-Low
UVLO Hysteresis
VHYS
—
100
—
mV
4.168
4.20
4.232
V
VDD=[VREG(Typical)+1V]
4.318
4.35
4.382
V
IOUT=10 mA
TA=-5°C to +55°C
Voltage Regulation (Constant Voltage Mode, System Test Mode)
Regulated Output Voltage
VREG
4.367
4.40
4.433
V
4.467
4.50
4.533
V
Line Regulation
|(ΔVBAT/VBAT)
/ΔVDD|
—
0.10
0.30
%/V
Load Regulation
|ΔVBAT/ VBAT|
—
0.10
0.30
%
IOUT=10 mA to 100 mA
VDD=[VREG(Typical)+1V]
PSRR
—
58
—
dB
IOUT=10 mA, 10Hz to 1 kHz
—
47
—
dB
IOUT=10 mA, 10Hz to 10 kHz
—
25
—
dB
IOUT=10 mA, 10Hz to 1 MHz
PROG = 10 kΩ
Supply Ripple Attenuation
VDD=[VREG(Typical)+1V] to
6V, IOUT=10 mA
Current Regulation (Fast Charge Constant Current Mode)
Fast Charge Current Regulation
IREG
90
100
110
mA
900
1000
1100
mA
PROG = 1.0 kΩ
TA=-5°C to +55°C
Maximum Output Current Limit
© 2009 Microchip Technology Inc.
IMAX
—
1200
—
mA
PROG < 833Ω
DS22005B-page 3
MCP73833/4
DC CHARACTERISTICS (CONTINUED)
Electrical Specifications: Unless otherwise specified, all limits apply for VDD= [VREG(Typical)+0.3V] to 6V, TA=-40°C to 85°C.
Typical values are at +25°C, VDD= [VREG(Typical)+1.0V]
Parameters
Sym
Min
Typ
Max
Units
Conditions
Preconditioning Current Regulation (Trickle Charge Constant Current Mode)
Precondition Current Ratio
Precondition Voltage Threshold
Ratio
IPREG / IREG
VPTH / VREG
7.5
10
12.5
%
PROG = 1.0 kΩ to 10 kΩ
15
20
25
%
TA=-5°C to +55°C
30
40
50
%
—
100
—
%
64
66.5
70
%
VBAT Low-to-High
69
71.5
75
%
VPHYS
—
100
—
mV
ITERM / IREG
3.75
5
6.25
%
PROG = 1.0 kΩ to 10 kΩ
TA=-5°C to +55°C
Precondition Hysteresis
VBAT High-to-Low
Charge Termination
Charge Termination Current Ratio
5.6
7.5
9.4
%
7.5
10
12.5
%
15
20
25
%
—
94.0
—
%
—
96.5
—
%
RDSON
—
300
—
mΩ
VDD = 3.75V
TJ = 105°C
IDISCHARGE
—
0.15
2
µA
PROG Floating
—
0.25
2
µA
VDD < VBAT
—
0.15
2
µA
VDD < VSTOP
—
-5.5
-15
µA
Charge Complete
mA
Automatic Recharge
Recharge Voltage Threshold Ratio
VRTH / VREG
VBAT High-to-Low
Pass Transistor ON-Resistance
ON-Resistance
Battery Discharge Current
Output Reverse Leakage Current
Status Indicators - STAT1, STAT2, PG
Sink Current
ISINK
—
15
25
Low Output Voltage
VOL
—
0.4
1
V
ISINK = 4 mA
Input Leakage Current
ILK
—
0.01
1
µA
High Impedance, 6V on pin
PROG Input
Charge Impedance Range
RPROG
1
—
20
kΩ
Standy Impedance
RPROG
70
—
200
kΩ
Minimum Impedance for
Standby
ITHERM
47
50
53
µA
2 kΩ < RTHERM < 50 kΩ
VTHERM Low-to-High
Thermistor Bias
Thermistor Current Source
Thermistor Comparator
Upper Trip Threshold
Upper Trip Point Hysteresis
Lower Trip Threshold
Lower Trip Point Hysteresis
VT1
1.20
1.23
1.26
V
VT1HYS
—
-50
—
mV
VT2
0.235
0.25
0.265
V
VT2HYS
—
50
—
mV
VTHERM High-to-Low
System Test (LDO) Mode
VIH
(VDD-0.1)
—
—
V
THERM Input Sink Current
ISINK
3
6
20
µA
Stand-by or system test mode
Bypass Capacitance
CBAT
1
—
—
µF
IOUT < 250 mA
4.7
—
—
µF
IOUT > 250 mA
Input High Voltage Level
DS22005B-page 4
© 2009 Microchip Technology Inc.
MCP73833/4
DC CHARACTERISTICS (CONTINUED)
Electrical Specifications: Unless otherwise specified, all limits apply for VDD= [VREG(Typical)+0.3V] to 6V, TA=-40°C to 85°C.
Typical values are at +25°C, VDD= [VREG(Typical)+1.0V]
Parameters
Sym
Min
Typ
Max
Units
Conditions
VPD
—
VBAT +
50 mV
—
V
2.3V < VBAT < VREG
VDD Falling
VPDEXIT
—
VBAT +
150 mV
—
V
2.3V < VBAT < VREG
VDD Rising
Input High Voltage Level
VIH
2.0
—
—
V
Input Low Voltage Level
VIL
—
—
0.6
V
Input Leakage Current
ILK
—
0.01
1
µA
TSD
—
150
—
°C
TSDHYS
—
10
—
°C
Automatic Power Down
Automatic Power Down Entry
Threshold
Automatic Power Down Exit Threshold
Timer Enable Input (TE)
VTE = 6V
Thermal Shutdown
Die Temperature
Die Temperature Hysteresis
AC CHARACTERISTICS
Electrical Specifications: Unless otherwise specified, all limits apply for VDD= [VREG(Typical)+0.3V] to 6V, TA=-40°C to 85°C.
Typical values are at +25°C, VDD= [VREG(Typical)+1.0V]
Parameters
Sym
Min
Typ
Max
Units
tSTART
—
—
5
ms
VDD Low-to-High
tDELAY
—
—
1
ms
VBAT<VPTH to VBAT>VPTH
tRISE
—
—
1
ms
IOUT Rising to 90% of IREG
tPRECON
0.4
1.3
3.2
ms
Average VBAT Rise/Fall
tTERM
0.4
1.3
3.2
ms
Average IOUT Falling
Charge Comparator Filter Time
tCHARGE
0.4
1.3
3.2
ms
Average VBAT Falling
Thermistor Comparator Filter Time
tTHERM
0.4
1.3
3.2
ms
Average THERM Rise/Fall
UVLO Start Delay
Conditions
Current Regulation
Transition Time Out of Preconditioning
Current Rise Time Out of Preconditioning
Preconditioning Comparator Filter Time
Termination Comparator Filter Time
Elapsed Timer
Elapsed Timer Period
tELAPSED
0
0
0
Hours
3.6
4.0
4.4
Hours
5.4
6.0
6.6
Hours
7.2
8.0
8.8
Hours
Timer Disabled
Status Indicators
Status Output turn-off
tOFF
—
—
200
µs
ISINK = 1 mA to 0 mA
Status Output turn-on
tON
—
—
200
µs
ISINK = 0 mA to 1 mA
TEMPERATURE SPECIFICATIONS
Electrical Specifications: Unless otherwise specified, all limits apply for VDD= [VREG(Typical)+0.3V] to 6V.
Typical values are at +25°C, VDD= [VREG(Typical)+1.0V]
Parameters
Symbol
Min
Typ
Max
Units
Conditions
Specified Temperature Range
TA
-40
—
+85
°C
Operating Temperature Range
TA
-40
—
+125
°C
Storage Temperature Range
TA
-65
—
+150
°C
Thermal Resistance, MSOP-10
θJA
—
113
—
°C/W
4-Layer JC51-7 Standard
Board, Natural Convection
Thermal Resistance, DFN-10, 3 mm x 3 mm
θJA
—
41
—
°C/W
4-Layer JC51-7 Standard
Board, Natural Convection
Temperature Ranges
Thermal Package Resistances
© 2009 Microchip Technology Inc.
DS22005B-page 5
MCP73833/4
NOTES:
DS22005B-page 6
© 2009 Microchip Technology Inc.
MCP73833/4
2.0
TYPICAL PERFORMANCE CURVES
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
4.210
1000
MCP73833
4.205
Charge Current (mA)
Battery Regulation Voltage
(V)
Note: Unless otherwise indicated, VDD = 5.2V, VREG = 4.20V, IOUT = 10 mA and TA= +25°C, Constant-voltage mode.
IOUT = 10 mA
4.200
4.195
IOUT = 100 mA
4.190
4.185
IOUT = 500 mA
4.180
IOUT = 900 mA
4.175
100
10
4.170
4.50
4.75
5.00
5.25
5.50
5.75
1
6.00
Charge Current (mA)
IOUT = 100 mA
4.200
4.190
IOUT = 500 mA
IOUT = 900 mA
Charge Current (mA)
Output Leakage Current (PA)
+85°C
-40°C
+25°C
0.15
0.10
0.05
3.20
3.40
3.60
3.80
4.00
4.20
Battery Regulation Voltage (V)
FIGURE 2-3:
Output Leakage Current
(IDISCHARGE) vs. Battery Regulation Voltage
(VBAT).
© 2009 Microchip Technology Inc.
19
21
102
101
100
99
98
97
4.75
5.00
5.25
5.50
1004
0.00
3.00
17
5.75
6.00
FIGURE 2-5:
Charge Current (IOUT) vs.
Supply Voltage (VDD).
0.40
0.20
15
Supply Voltage (V)
FIGURE 2-2:
Battery Regulation Voltage
(VBAT) vs. Ambient Temperature (TA).
0.25
13
RPROG = 10 k:
Ambient Temperature (°C)
0.30
11
103
96
4.50
80
70
60
50
40
30
20
0
10
-10
-20
-30
4.160
0.35
9
FIGURE 2-4:
Charge Current (IOUT) vs.
Programming Resistor (RPROG).
IOUT = 10 mA
4.210
4.170
7
104
MCP73833
-40
Battery Regulation Voltage (V)
FIGURE 2-1:
Battery Regulation Voltage
(VBAT) vs. Supply Voltage (VDD).
4.180
5
Programming Resistor (k:)
Supply Voltage (V)
4.220
3
RPROG = 1 k:
1002
1000
998
996
994
992
990
988
986
4.50
4.75
5.00
5.25
5.50
5.75
6.00
Supply Voltage (V)
FIGURE 2-6:
Charge Current (IOUT) vs.
Supply Voltage (VDD).
DS22005B-page 7
MCP73833/4
TYPICAL PERFORMANCE CURVES (Continued)
49.0
48.5
Junction Temperature (°C)
0
RPROG = 1 k:
-10
1000
Attenuation (dB)
Charge Current (mA)
80
70
60
50
FIGURE 2-10:
Thermistor Bias Current
(ITHRERM) vs. Ambient Temperature (TA).
800
600
400
200
-20
VAC = 100 mVp-p
IOUT = 10 mA
COUT = 4.7 µF, X7R
Ceramic
-30
-40
-50
-60
-70
0.01
155
145
135
125
115
105
95
85
75
65
55
45
35
25
0
0.1
Junction Temperature (°C)
0
51.5
-10
Attenuation (dB)
51.0
50.5
50.0
49.5
49.0
48.5
4.75
5.00
5.25
5.50
5.75
6.00
Supply Voltage (V)
FIGURE 2-9:
Thermistor Bias Current
(ITHRERM) vs. Supply Voltage (VDD).
DS22005B-page 8
10
100
1000
FIGURE 2-11:
Power Supply Ripple
Rejection (PSRR).
52.0
48.0
4.50
1
Frequency (kHz)
FIGURE 2-8:
Charge Current (IOUT) vs.
Junction Temperature (TJ).
Thermistor Bias Current (PA)
40
Ambient Temperature (°C)
FIGURE 2-7:
Charge Current (IOUT) vs.
Junction Temperature (TJ).
1200
30
48.0
155
145
135
125
115
95
105
85
75
65
55
45
35
25
0
49.5
20
20
50.0
0
40
50.5
10
60
51.0
-10
80
51.5
-20
100
52.0
-30
RPROG = 10 k:
-40
Charge Current (mA)
120
Thermistor Bias Current (µA)
Note: Unless otherwise indicated, VDD = 5.2V, VREG = 4.20V, IOUT = 10 mA and TA= +25°C, Constant-voltage mode.
-20
VAC = 100 mVp-p
IOUT = 100 mA
COUT = 4.7 µF, X7R
Ceramic
-30
-40
-50
-60
0.01
0.1
1
10
100
1000
Frequency (kHz)
FIGURE 2-12:
Power Supply Ripple
Rejection (PSRR).
© 2009 Microchip Technology Inc.
MCP73833/4
TYPICAL PERFORMANCE CURVES (Continued)
0.10
1.20
0.05
10
0.00
1.00
0.00
8
-0.05
0.80
-0.05
6
-0.10
0.60
-0.10
4
-0.15
0.40
-0.15
-0.25
-0.30
2
-0.20
IOUT = 100 mA
COUT = 4.7 µF, X7R
Ceramic
-0.25
1.0
0.25
0.00
0.20
-0.02
0.15
-0.04
0.10
-0.06
0.05
-0.08
COUT = 4.7 µF, X7R
Ceramic
-0.10
200
180
160
140
120
100
80
60
40
20
-0.12
0
-0.05
Time (µs)
Load Transient Response.
© 2009 Microchip Technology Inc.
200
180
160
140
120
5.0
200
4.0
160
3.0
120
2.0
80
MCP73833-FCI/MF
VDD = 5.2V
RPROG = 10.0 k:
1.0
0.0
40
Charge Current (A)
0.02
FIGURE 2-17:
Complete Charge Cycle
(180 mA Li-Ion Battery).
Battery Voltage (V)
0.04
0.30
Output Ripple (V)
Output Current (A)
Line Transient Response.
0.35
FIGURE 2-15:
80
Time (Minutes)
Time (µs)
0.00
40
0
0
200
180
160
140
120
100
80
60
40
0
80
MCP73833-FCI/MF
VDD = 5.2V
RPROG = 10.0 k:
0.0
-0.30
20
-2
2.0
Charge Current (A)
-0.15
120
210
4
3.0
180
-0.10
160
150
-0.05
6
4.0
120
8
200
90
0.00
5.0
60
10
Load Transient Response.
30
0.05
FIGURE 2-16:
Battery Voltage (V)
0.10
12
Output Ripple (V)
Source Voltage (V)
14
FIGURE 2-14:
100
60
40
-0.30
Time (µs)
Line Transient Response.
0
-0.25
-0.20
Time (µs)
FIGURE 2-13:
-0.20
COUT = 4.7 µF, X7R
Ceramic
0.00
200
180
160
80
100
60
40
0
20
-2
140
0
0.20
20
-0.20
IOUT = 10 mA
COUT = 4.7 µF, X7R
Ceramic
0
2
Output Ripple (V)
1.40
0.05
Output Current (A)
0.10
12
Output Ripple (V)
14
120
Source Voltage (V)
Note: Unless otherwise indicated, VDD = 5.2V, VREG = 4.20V, IOUT = 10 mA and TA= +25°C, Constant-voltage mode.
0
0
2
4
6
8
10
Time (Minutes)
FIGURE 2-18:
Charge Cycle Start Preconditioning (180 mAh Li-Ion Battery).
DS22005B-page 9
MCP73833/4
NOTES:
DS22005B-page 10
© 2009 Microchip Technology Inc.
MCP73833/4
3.0
PIN DESCRIPTIONS
Descriptions of the pins are listed in Table 3-1.
TABLE 3-1:
PIN FUNCTION TABLE
Pin No.
Symbol
Function
DFN-10
MSOP-10
1
1
VDD
2
2
VDD
3
3
STAT1
Charge Status Output
4
4
STAT2
Charge Status Output
5
5
VSS
6
6
PROG
Current Regulation Set and Charge Control Enable
7
7
PG, TE
MCP73833: Power Good output, MCP73834: Timer Enable input
8
8
THERM
Thermistor input
9
9
VBAT
10
10
VBAT
11
—
EP
3.1
Battery Management Input Supply
Battery Management Input Supply
Battery Management 0V Reference
Battery Charge Control Output
Battery Charge Control Output
Exposed Thermal Pad (EP); must be connected to VSS.
Battery Management Input Supply
(VDD)
A supply voltage of [VREG (typical) + 0.3V] to 6V is
recommended. Bypass to VSS with a minimum of 1 µF.
3.2
Charge Status Outputs (STAT1,
STAT2)
STAT1 and STAT2 are open-drain logic outputs for connection to a LED for charge status indication.
Alternatively, a pull-up resistor can be applied for
interfacing to a host microcontroller.
3.3
Battery Management 0V Reference
(VSS)
Connect to negative terminal of battery and input
supply.
3.4
3.6
The timer enable (TE) input option is used to enable or
disable the internal timer. A low signal on this pin
enables the internal timer and a high signal disables
the internal timer. The TE input can be used to disable
the timer when the charger is supplying current to
charge the battery and power the system load. The TE
input is compatible with 1.8V logic.
3.7
Thermistor Input (THERM)
An internal 50 µA current source provides the bias for
most common 10 kΩ negative-temperature coefficient
thermistors (NTC). The MCP73833/4 compares the
voltage at the THERM pin to factory set thersholds of
1.20V and 0.25V, typically.
3.8
Current Regulation Set (PROG)
Preconditioning, fast charge, and termination currents
are scaled by placing a resistor from PROG to VSS.
Timer Enable Input (TE)
MCP73834 Only
Battery Charge Control Output
(VBAT)
The charge management controller can be disabled by
allowing the PROG input to float.
Connect to positive terminal of battery. Drain terminal
of internal P-channel MOSFET pass transistor. Bypass
to VSS with a minimum of 1 µF to ensure loop stability
when the battery is disconnected.
3.5
3.9
Power Good Indication (PG)
MCP73833 Only
The power good (PG) option is a pseudo open-drain
output. The PG output can sink current, but not source
current. However, there is a diode path back to the
input, and, as such, the PG output should only be
pulled up to the input. The PG output is low whenever
the input to the MCP73833 is above the UVLO
threshold and greater than the battery voltage.
© 2009 Microchip Technology Inc.
Exposed Thermal Pad (EP)
There is an internal electrical connection between the
Exposed Thermal Pad (EP) and the VSS pin; they must
be connected to the same potential.
DS22005B-page 11
MCP73833/4
NOTES:
DS22005B-page 12
© 2009 Microchip Technology Inc.
MCP73833/4
4.0
FUNCTIONAL DESCRIPTION
The MCP73833/4 is a highly advanced linear charge
management controller. Refer to the functional block
diagram and Figure 4-1 that depicts the operational
flow algorithm from charge initiation to completion and
automatic recharge.
SHUTDOWN MODE *
VDD < VUVLO
VDD < VBAT
STAT1 = HI-Z
STAT2 = HI-Z
PG = HI-Z
SYSTEM TEST (LDO) MODE
VTHERM > (VDD - 100 mv)
PROG > 20 kΩ
STAT1 = LOW
STAT2 = LOW
PG = LOW
Timer Suspended
* Continuously Monitored
STANDBY MODE *
VBAT (VREG + 100 mv)
PROG > 200 kΩ
STAT1 = HI-Z
STAT2 = HI-Z
PG = LOW
VBAT < VPTH
PRECONDITIONING MODE
Charge Current (IPREG
STAT1 = LOW
STAT2 = Hi-Z
PG = LOW
Timer Reset
VBAT > VPTH
VBAT > VPTH
TEMPERATURE FAULT
No Charge Current
STAT1 = Hi-Z
STAT2 = Hi-Z
PG = LOW
Timer Suspended
FAST CHARGE MODE
Charge Current (IREG
STAT1 = LOW
STAT2 = Hi-Z
PG = LOW
Timer Enabled
Timer Expired
VBAT < VRTH
TIMER FAULT
No Charge Current
STAT1 = Hi-Z
STAT2 = Hi-Z
PG = LOW
Timer Suspended
VBAT = VREG
CONSTANT VOLTAGE MODE
Charge Voltage (VREG
STAT1 = LOW
STAT2 = Hi-Z
PG = LOW
VBAT < ITERM
Timer Expired
CHARGE COMPLETE MODE
No Charge Current
STAT1 = HI-Z
STAT2 = LOW
PG = LOW
Timer Reset
FIGURE 4-1:
Flow Chart.
© 2009 Microchip Technology Inc.
DS22005B-page 13
MCP73833/4
4.1
Under Voltage Lockout (UVLO)
An internal under voltage lockout (UVLO) circuit
monitors the input voltage and keeps the charger in
shutdown mode until the input supply rises above the
UVLO threshold. The UVLO circuitry has a built-in
hysteresis of 100 mV.
In the event a battery is present when the input power
is applied, the input supply must rise +150 mV above
the battery voltage before the MCP73833/4 becomes
operational.
The UVLO circuit places the device in shutdown mode
if the input supply falls to within +50 mV of the battery
voltage.
The UVLO circuit is always active. At any time the input
supply is below the UVLO threshold or within +50 mV
of the voltage at the VBAT pin, the MCP73833/4 is
placed in a shutdown mode.
During any UVLO condition, the battery reverse
discharge current shall be less than 2 µA.
4.2
Charge Qualification
For a charge cycle to begin, all UVLO conditions must
be met and a battery or output load must be present.
A charge current programming resistor must be
connected from PROG to VSS. If the PROG pin is open
or floating, the MCP73833/4 is disabled and the battery
reverse discharge current is less than 2 µA. In this
manner, the PROG pin acts as a charge enable and
can be used as a manual shutdown.
If the input supply voltage is above the UVLO
threshold, but below VREG(Typical)+0.3V, the
MCP73833/4 will pulse the STAT1 and PG outputs as
the device determines if a battery is present.
4.3
Preconditioning
If the voltage at the VBAT pin is less than the
preconditioning threshold, the MCP73833/4 enters a
preconditioning or trickle charge mode. The
preconditioning threshold is factory set. Refer to
Section 1.0
“Electrical
Characteristics”
for
preconditioning threshold options.
In this mode, the MCP73833/4 supplies a percentage
of the charge current (established with the value of the
resistor connected to the PROG pin) to the battery. The
percentage or ratio of the current is factory set. Refer to
Section 1.0
“Electrical
Characteristics”
for
preconditioning current options.
When the voltage at the VBAT pin rises above the preconditioning threshold, the MCP73833/4 enters the
constant current or fast charge mode.
DS22005B-page 14
4.4
Constant Current - Fast Charge
Mode
During the constant current mode, the programmed
charge current is supplied to the battery or load. The
charge current is established using a single resistor
from PROG to VSS. The program resistor and the
charge current are calculated using Equation 4-1:
EQUATION 4-1:
1000VI REG = ---------------R PROG
Where:
RPROG
=
kilo-ohms
IREG
=
milliampere
Constant current mode is maintained until the voltage
at the VBAT pin reaches the regulation voltage, VREG.
When constant current mode is invoked, the internal
timer is reset.
4.4.1
TIMER EXPIRED DURING
CONSTANT CURRENT - FAST
CHARGE MODE
If the internal timer expires before the recharge voltage
threshold is reached, a timer fault is indicated and the
charge cycle terminates. The MCP73833/4 remains in
this condition until the battery is removed, the input
power is removed, or the PROG pin is opened. If the
battery is removed or the PROG pin is opened, the
MCP73833/4 enters the Standby mode where it
remains until a battery is reinserted or the PROG pin is
reconnected. If the input power is removed, the
MCP73833/4 is in Shutdown. When the input power is
reapplied, a normal start-up sequence ensues.
4.5
Constant Voltage Mode
When the voltage at the VBAT pin reaches the
regulation voltage, VREG, constant voltage regulation
begins. The regulation voltage is factory set to 4.20V,
4.35V, 4.40V, or 4.50V with a tolerance of ± 0.75%.
4.6
Charge Termination
The charge cycle is terminated when, during constant
voltage mode, the average charge current diminishes
below a percentage of the programmed charge current
(established with the value of the resistor connected to
the PROG pin) or the internal timer has expired. A 1 ms
filter time on the termination comparator ensures that
transient load conditions do not result in premature
charge cycle termination. The percentage or ratio of the
current is factory set. The timer period is factory set
and can be disabled. Refer to Section 1.0 “Electrical
Characteristics” for charge termination current ratio
and timer period options.
The charge current is latched off and the MCP73833/4
enters a charge complete mode.
© 2009 Microchip Technology Inc.
MCP73833/4
4.7
Automatic Recharge
4.9
The MCP73833/4 continuously monitors the voltage at
the VBAT pin in the charge complete mode. If the
voltage drops below the recharge threshold, another
charge cycle begins and current is once again supplied
to the battery or load. The recharge threshold is factory
set. Refer to Section 1.0 “Electrical Characteristics”
for recharge threshold options.
4.8
Thermal Shutdown
The MCP73833/4 suspends charge if the die
temperature exceeds +150°C. Charging will resume
when the die temperature has cooled by approximately
+10°C. The thermal shutdown is a secondary safety
feature in the event that there is a failure within the
thermal regulation circuitry.
Thermal Regulation
The MCP73833/4 limits the charge current based on
the die temperature. The thermal regulation optimizes
the charge cycle time while maintaining device
reliability. Figure 4-2 depicts the thermal regulation for
the MCP73833/4.
Charge Current (mA)
1200
RPROG = 1 kΩ
1000
800
600
400
200
155
145
135
125
115
95
105
85
75
65
55
45
35
25
0
Junction Temperature (°C)
FIGURE 4-2:
Thermal Regulation.
© 2009 Microchip Technology Inc.
DS22005B-page 15
MCP73833/4
NOTES:
DS22005B-page 16
© 2009 Microchip Technology Inc.
MCP73833/4
5.0
DETAILED DESCRIPTION
5.1
Analog Circuitry
5.1.1
BATTERY MANAGEMENT INPUT
SUPPLY (VDD)
The VDD input is the input supply to the MCP73833/4.
The MCP73833/4 automatically enters a Power-down
mode if the voltage on the VDD input falls below the
UVLO voltage (VSTOP). This feature prevents draining
the battery pack when the VDD supply is not present.
5.1.2
CURRENT REGULATION SET
(PROG)
Fast charge current regulation can be scaled by placing
a programming resistor (RPROG) from the PROG input
to VSS. The program resistor and the charge current
are calculated using the Equation 5-1:
EQUATION 5-1:
1000VI REG = ---------------R PROG
Where:
RPROG
=
kilo-ohms
IREG
=
milliampere
pass transistor and holding the timer value. The charge
cycle resumes when the voltage at the THERM pin
returns to the normal range.
If temperature monitoring is not required, place a
standard 10 kΩ resistor from THERM to VSS.
5.1.4.1
The MCP73833/4 can be placed in a system test mode.
In this mode, the MCP73833/4 operates as a low
dropout linear regulator (LDO). The output voltage is
regulated to the factory set voltage regulation option.
The available output current is limitted to the
programmed fast charge current. For stability, the VBAT
output must be bypassed to VSS with a minimum
capacitance of 1 µF for output currents up to 250 mA.
A minimum capacitance of 4.7 µF is required for output
currents above 250 mA.
The system test mode is entered by driving the THERM
input greater than (VDD-100 mV) with no battery
connected to the output. In this mode, the MCP73833/
4 can be used to power the system without a battery
present.
Note 1: ITHERM is disabled during shutdown,
stand-by, and system test modes.
2: A pull-down current source on the
THERM input is active only in stand-by
and system test modes.
The preconditioning trickle-charge current and the
charge termination current are ratiometric to the fast
charge current based on the selected device options.
5.1.3
5.1.4
3: During system test mode, the PROG
input sets the available output current
limit.
BATTERY CHARGE CONTROL
OUTPUT (VBAT)
The battery charge control output is the drain terminal
of an internal P-channel MOSFET. The MCP73833/4
provides constant current and voltage regulation to the
battery pack by controlling this MOSFET in the linear
region. The battery charge control output should be
connected to the positive terminal of the battery pack.
TEMPERATURE QUALIFICATION
(THERM)
The MCP73833/4 continuously monitors battery
temperature during a charge cycle by measuring the
voltage between the THERM and VSS pins. An internal
50 µA current source provides the bias for most
common 10 kΩ negative-temperature coefficient
(NTC) or positive-temperature coefficient (PTC)
thermistors.The current source is controlled, avoiding
measurement sensitivity to fluctuations in the supply
voltage (VDD). The MCP73833/4 compares the voltage
at the THERM pin to factory set thersholds of 1.20V
and 0.25V, typically. Once a volage outside the
thresholds is detected during a charge cycle, the
MCP73833/4 immediately suspends the charge cycle.
The MCP73833/4 suspends charge by turning off the
System Test (LDO) Mode
4: System test mode shall be exited by
releasing the THERM input or cycling
input power.
5.2
Digital Circuitry
5.2.1
STATUS INDICATORS AND POWER
GOOD (PG - OPTION)
The charge status outputs have two different states:
Low (L), and High Impedance (Hi-Z). The charge status
outputs can be used to illuminate LEDs. Optionally, the
charge status outputs can be used as an interface to a
host microcontroller. Table 5-1 summarize the state of
the status outputs during a charge cycle.
TABLE 5-1:
Charge Cycle State
STAT1
STAT2
PG
Shutdown
Hi-Z
Hi-Z
Hi-Z
Standby
Hi-Z
Hi-Z
L
L
Hi-Z
L
Hi-Z
L
L
Charge in Progress
Charge Complete (EOC)
Temperature Fault
Hi-Z
Hi-Z
L
Timer Fault
Hi-Z
Hi-Z
L
L
L
L
System Test Mode
© 2009 Microchip Technology Inc.
STATUS OUTPUTS
DS22005B-page 17
MCP73833/4
5.2.2
POWER GOOD (PG) OPTION
The power good (PG) option is a pseudo open-drain
output. The PG output can sink current, but not source
current. However, there is a diode path back to the
input, and as such, the PG output should only be pulled
up to the input. The PG output is low whenever the
input to the MCP73833 is above the UVLO threshold
and greater than the battery voltage. If the supply
voltage is above the UVLO, but below
VREG(Typical)+0.3V, the MCP73833 will pulse the PG
output as the device determines if a battery is present.
5.2.3
5.2.4
DEVICE DISABLE (PROG)
The current regulation set input pin (PROG) can be
used to terminate a charge at any time during the
charge cycle, as well as to initiate a charge cycle or
initiate a recharge cycle.
Placing a programming resistor from the PROG input to
VSS enables the device. Allowing the PROG input to
float or by applying a logic-high input signal, disables
the device and terminates a charge cycle. When
disabled, the device’s supply current is reduced to
100 µA, typically.
TIMER ENABLE (TE) OPTION
The timer enable (TE) input option is used to enable or
disable the internal timer. A low signal on this pin
enables the internal timer and a high signal disables
the internal timer. The TE input can be used to disable
the timer when the charger is supplying current to
charge the battery and power the system load. The TE
input is compatible with 1.8V logic.
DS22005B-page 18
© 2009 Microchip Technology Inc.
MCP73833/4
6.0
APPLICATIONS
The MCP73833/4 is designed to operate in conjunction
with a host microcontroller or in stand-alone
applications. The MCP73833/4 provides the preferred
charge algorithm for Lithium-Ion and Lithium-Polymer
cells Constant-current followed by Constant-voltage.
Figure 6-1 depicts a typical stand-alone application
circuit, while Figures 6-2 and 6-3 depict the
accompanying charge profile.
Li-Ion Battery Charger
1,2
CIN
LED
LED
3
RLED
4
RLED
7
RLED
STAT1 THERM
STAT2
2.00
4.0
1.60
3.0
1.20
2.0
0.80
MCP73833-FCI/MF
VDD = 5.2V
RPROG = 1.00 k:
0.40
160
140
120
100
80
60
40
20
0.00
0
0.0
Charge Current (A)
Battery Voltage (V)
Time (Minutes)
5.0
2.00
4.0
1.60
3.0
1.20
2.0
0.80
MCP73833-FCI/MF
VDD = 5.2V
RPROG = 1.00 k:
1.0
10
8
6
4
0.00
2
0.0
0.40
Charge Current (A)
FIGURE 6-2:
Typical Charge Profile with
Thermal Regulation (1700 mAh Li-Ion Battery).
0
PROG
VSS
PG
8
RT1
6
5
RPROG
RT2
T 10 kΩ
MCP73833
6.1
Battery Voltage (V)
+ Single
Li-Ion
- Cell
COUT
Typical Application Circuit.
5.0
1.0
VBAT 9,10
LED
Regulated
Wall Cube
FIGURE 6-1:
VDD
Time (Minutes)
Application Circuit Design
Due to the low efficiency of linear charging, the most
important factors are thermal design and cost, which
are a direct function of the input voltage, output current
and thermal impedance between the battery charger
and the ambient cooling air. The worst-case scenario is
when the device has transitioned from the
Preconditioning mode to the Constant-current mode. In
this situation, the battery charger has to dissipate the
maximum power. A trade-off must be made between
the charge current, cost and thermal requirements of
the charger.
6.1.1
COMPONENT SELECTION
Selection of the external components in Figure 6-1 is
crucial to the integrity and reliability of the charging
system. The following discussion is intended as a guide
for the component selection process.
6.1.1.1
Current Programming Resistor
(RPROG)
The preferred fast charge current for Lithium-Ion cells
is at the 1C rate, with an absolute maximum current at
the 2C rate. For example, a 500 mAh battery pack has
a preferred fast charge current of 500 mA. Charging at
this rate provides the shortest charge cycle times
without degradation to the battery pack performance or
life.
FIGURE 6-3:
Typical Charge Cycle Start
with Thermal Regulation (1700 mAh Li-Ion
Battery).
© 2009 Microchip Technology Inc.
DS22005B-page 19
MCP73833/4
6.1.1.2
Thermal Considerations
The worst-case power dissipation in the battery charger occurs when the input voltage is at the maximum
and the device has transitioned from the
Preconditioning mode to the Constant-current mode. In
this case, the power dissipation is:
PowerDissipation = ( V DDMAX – V PTHMIN ) × I REGMAX
Where:
VDDMAX
=
the maximum input voltage
IREGMAX
=
the maximum fast charge current
VPTHMIN
=
the minimum transition threshold
voltage
Power dissipation with a 5V, ±10% input voltage source
is:
PowerDissipation = ( 5.5V – 2.7V ) × 550mA = 1.54W
This power dissipation with the battery charger in the
MSOP-10 package will cause thermal regulation to be
entered as depicted in Figure 6-3. Alternatively, the
DFN-10 (3 mm x 3 mm) package could be utilized to
reduce charge cycle times.
6.1.1.3
External Capacitors
The MCP73833/4 is stable with or without a battery
load. In order to maintain good AC stability in the
Constant-voltage mode, a minimum capacitance of
4.7 µF is recommended to bypass the VBAT pin to VSS.
This capacitance provides compensation when there is
no battery load. In addition, the battery and
interconnections appear inductive at high frequencies.
These elements are in the control feedback loop during
Constant-voltage mode. Therefore, the bypass
capacitance may be necessary to compensate for the
inductive nature of the battery pack.
Virtually any good quality output filter capacitor can be
used, independent of the capacitor’s minimum
Effective Series Resistance (ESR) value. The actual
value of the capacitor (and its associated ESR)
depends on the output load current. A 4.7 µF ceramic,
tantalum or aluminum electrolytic capacitor at the
output is usually sufficient to ensure stability for output
currents up to a 500 mA.
6.1.1.4
6.1.1.5
Charge Inhibit
The current regulation set input pin (PROG) can be
used to terminate a charge at any time during the
charge cycle, as well as to initiate a charge cycle or
initiate a recharge cycle.
Placing a programming resistor from the PROG input to
VSS enables the device. Allowing the PROG input to
float or by applying a logic-high input signal, disables
the device and terminates a charge cycle. When
disabled, the device’s supply current is reduced to
100 µA, typically.
6.1.1.6
Temperature Monitoring
The charge temperature window can be set by placing
fixed value resistors in series-parallel with a thermistor.
The resistance values of RT1 and RT2 can be
calculated with the following equations in order to set
the temperature window of interest.
For NTC thermistors:
R T2 × R COLD
24k Ω = R T1 + -------------------------------R T2 + R COLD
R T2 × R HOT
5k Ω = R T1 + ---------------------------R T2 + R HOT
Where:
RT1
=
the fixed series resistance
RT2
=
the fixed parallel resistance
RCOLD
=
the thermistor resistance at the
lower temperature of interest
RHOT
=
the thermistor resistance at the
upper temperature of interest
For example, by utilizing a 10 kΩ at 25C NTC
thermistor with a sensitivity index, β, of 3892, the
charge temperature range can be set to 0C - 50C by
placing a 1.54 kΩ resistor in series (RT1), and a
69.8 kΩ resistor in parallel (RT2) with the thermistor as
depicted in Figure 6-1.
6.1.1.7
Charge Status Interface
A status output provides information on the state of
charge. The output can be used to illuminate external
LEDs or interface to a host microcontroller. Refer to
Table 5-1 for a summary of the state of the status
output during a charge cycle.
Reverse-Blocking Protection
The MCP73833/4 provides protection from a faulted or
shorted input. Without the protection, a faulted or
shorted input would discharge the battery pack through
the body diode of the internal pass transistor.
DS22005B-page 20
© 2009 Microchip Technology Inc.
MCP73833/4
6.2
PCB Layout Issues
For optimum voltage regulation, place the battery pack
as close as possible to the device’s VBAT and VSS pins,
recommended to minimize voltage drops along the
high current-carrying PCB traces.
If the PCB layout is used as a heatsink, adding many
vias in the heatsink pad can help conduct more heat to
the backplane of the PCB, thus reducing the maximum
junction temperature. Figures 6-4 and 6-5 depict a
typical layout with PCB heatsinking.
MCP73833
VSS
CIN
COUT
VDD
VBAT
STAT1
THERM
STAT2
PG
RPROG
FIGURE 6-4:
Typical Layout (Top).
VSS
VDD
FIGURE 6-5:
VBAT
Typical Layout (Bottom).
© 2009 Microchip Technology Inc.
DS22005B-page 21
MCP73833/4
NOTES:
DS22005B-page 22
© 2009 Microchip Technology Inc.
MCP73833/4
7.0
PACKAGING INFORMATION
7.1
Package Marking Information
10-Lead DFN (3x3)
Example:
Part Number *
XXXX
YYWW
NNN
Marking
Code
Part Number *
MCP73833-AMI/MF
AAAA
MCP73833-BZI/MF
AAAB
MCP73833-FCI/MF
AAAC
MCP73834-FCI/MF
MCP73833-GPI/MF
AAAD
MCP73834-GPI/MF
MCP73833-NVI/MF
AAAF
MCP73834-NVI/MF
MCP73833-6SI/MF
AAAH
MCP73834-6SI/MF
MCP73833-CNI/MF
AAAK
MCP73834-CNI/MF
* Consult Factory for Alternative Device Options.
Marking
Code
BAAC
BAAD
BAAF
BAAH
BAAK
Example:
10-Lead MSOP
Part Number *
XXXXXX
YWWNNN
Marking
Code
Part Number *
MCP73833-AMI/UN
833AMI
MCP73833-BZI/UN
833BZI
MCP73833-FCI/UN
833FCI MCP73834-FCI/UN
MCP73833-GPI/UN
833GPI MCP73834-GPI/UN
MCP73833-NVI/UN
833NVI MCP73834-NVI/UN
MCP73833-CNI/UN
833CNI MCP73834-CNI/UN
* Consult Factory for Alternative Device Options.
Legend: XX...X
Y
YY
WW
NNN
e3
*
Note:
AAAA
0918
256
Marking
Code
834FCI
834GPI
834NVI
834CNI
833AMI
918256
Customer-specific information
Year code (last digit of calendar year)
Year code (last 2 digits of calendar year)
Week code (week of January 1 is week ‘01’)
Alphanumeric traceability code
Pb-free JEDEC designator for Matte Tin (Sn)
This package is Pb-free. The Pb-free JEDEC designator ( e3 )
can be found on the outer packaging for this package.
In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.
© 2009 Microchip Technology Inc.
DS22005B-page 23
MCP73833/4
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DS22005B-page 24
© 2009 Microchip Technology Inc.
MCP73833/4
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© 2009 Microchip Technology Inc.
DS22005B-page 25
MCP73833/4
NOTES:
DS22005B-page 26
© 2009 Microchip Technology Inc.
MCP73833/4
APPENDIX A:
REVISION HISTORY
Revision B (May 2009)
The following is the list of modifications:
1.
2.
3.
4.
Added
the
MCP73833-6SI/MF
and
MCP73834-6SI/MF10-lead DFN packages.
Updated DFN pinout.
Updated Package Outline Drawings.
Updated Appendix A Revision History.
Revision A (September 2006)
• Original Release of this Document.
© 2009 Microchip Technology Inc.
DS22005B-page 27
MCP73833/4
NOTES:
DS22005B-page 28
© 2009 Microchip Technology Inc.
MCP73833/4
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
PART NO.
Device
XX
Examples: * *
XX
X/
Output Temp. Package
Options*
Device:
Output Options * *
MCP73833: 1A Fully Integrated Charger,
PG function on pin 7
MCP73833T: 1A Fully Integrated Charger,
PG function on pin 7
(Tape and Reel)
MCP73834: 1A Fully Integrated Charger,
TE function on pin 7
MCP73834T: 1A Fully Integrated Charger,
TE function on pin 7
(Tape and Reel)
a)
b)
c)
d)
e)
f)
g)
MCP73833-AMI/UN:
MCP73833-BZI/UN:
MCP73833-CNI/MF:
MCP73833-FCI/UN:
MCP73833-GPI/UN:
MCP73833-NVI/MF:
MCP73833-6SI/MF:
10-lead MSOP pkg.
10-lead MSOP pkg.
10-lead DFN pkg.
10-lead MSOP pkg.
10-lead MSOP pkg.
10-lead DFN pkg.
10-lead DFN pkg.
a)
b)
c)
d)
e)
MCP73834-CNI/MF:
MCP73834-FCI/UN:
MCP73834-GPI/UN:
MCP73834-NVI/MF:
MCP73834-6SI/MF:
10-lead DFN pkg.
10-lead MSOP pkg.
10-lead MSOP pkg.
10-lead DFN pkg.
10-lead DFN pkg.
* Refer to table below for different operational options.
* * Consult Factory for Alternative Device Options
* * Consult Factory for Alternative Device Options.
Temperature:
I
= -40°C to +85°C
Package Type:
MF = Plastic Dual Flat No Lead (DFN)
(3x3x0.9 mm Body), 10-lead
UN = Plastic Micro Small Outline Package (MSOP),
10-lead
Part Number
VREG
IPREG/IREG
VPTH/VREG
ITERM/IREG
VRTH/VREG
Timer Period
MCP73833-AMI/MF
4.20V
10%
71.5%
7.5%
96.5%
0 hours
MCP73833-BZI/MF
4.20V
100%
N/A
7.5%
96.5%
0 hours
MCP73833-CNI/MF
4.20V
10%
71.5%
20%
94%
4 hours
MCP73833-FCI/MF
4.20V
10%
71.5%
7.5%
96.5%
6 hours
MCP73833-GPI/MF
4.20V
100%
N/A
7.5%
96.5%
6 hours
MCP73833-NVI/MF
4.35V
10%
71.5%
7.5%
96.5%
6 hours
MCP73833-6SI/MF
4.50V
10%
71.5%
7.5%
96.5%
6 hours
MCP73833-AMI/UN
4.20V
10%
71.5%
7.5%
96.5%
0 hours
MCP73833-FCI/UN
4.20V
10%
71.5%
7.5%
96.5%
6 hours
MCP73834-BZI/MF
4.20V
100%
N/A
7.5%
96.5%
0 hours
MCP73834-CNI/MF
4.20V
10%
71.5%
20%
94%
4 hours
MCP73834-FCI/MF
4.20V
10%
71.5%
7.5%
96.5%
6 hours
MCP73834-NVI/MF
4.35V
10%
71.5%
7.5%
96.5%
6 hours
MCP73834-6SI/MF
4.50V
10%
71.5%
7.5%
96.5%
6 hours
MCP73834-FCI/UN
4.20V
10%
71.5%
7.5%
96.5%
6 hours
© 2009 Microchip Technology Inc.
DS22005B-page 29
MCP73833/4
NOTES:
DS22005B-page 30
© 2009 Microchip Technology Inc.
Note the following details of the code protection feature on Microchip devices:
•
Microchip products meet the specification contained in their particular Microchip Data Sheet.
•
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
•
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
•
Microchip is willing to work with the customer who is concerned about the integrity of their code.
•
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Information contained in this publication regarding device
applications and the like is provided only for your convenience
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR
WARRANTIES OF ANY KIND WHETHER EXPRESS OR
IMPLIED, WRITTEN OR ORAL, STATUTORY OR
OTHERWISE, RELATED TO THE INFORMATION,
INCLUDING BUT NOT LIMITED TO ITS CONDITION,
QUALITY, PERFORMANCE, MERCHANTABILITY OR
FITNESS FOR PURPOSE. Microchip disclaims all liability
arising from this information and its use. Use of Microchip
devices in life support and/or safety applications is entirely at
the buyer’s risk, and the buyer agrees to defend, indemnify and
hold harmless Microchip from any and all damages, claims,
suits, or expenses resulting from such use. No licenses are
conveyed, implicitly or otherwise, under any Microchip
intellectual property rights.
Trademarks
The Microchip name and logo, the Microchip logo, Accuron,
dsPIC, KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro,
PICSTART, rfPIC, SmartShunt and UNI/O are registered
trademarks of Microchip Technology Incorporated in the
U.S.A. and other countries.
FilterLab, Hampshire, Linear Active Thermistor, MXDEV,
MXLAB, SEEVAL, SmartSensor and The Embedded Control
Solutions Company are registered trademarks of Microchip
Technology Incorporated in the U.S.A.
Analog-for-the-Digital Age, Application Maestro, CodeGuard,
dsPICDEM, dsPICDEM.net, dsPICworks, dsSPEAK, ECAN,
ECONOMONITOR, FanSense, In-Circuit Serial
Programming, ICSP, ICEPIC, Mindi, MiWi, MPASM, MPLAB
Certified logo, MPLIB, MPLINK, mTouch, nanoWatt XLP,
PICkit, PICDEM, PICDEM.net, PICtail, PIC32 logo, PowerCal,
PowerInfo, PowerMate, PowerTool, REAL ICE, rfLAB, Select
Mode, Total Endurance, TSHARC, WiperLock and ZENA are
trademarks of Microchip Technology Incorporated in the
U.S.A. and other countries.
SQTP is a service mark of Microchip Technology Incorporated
in the U.S.A.
All other trademarks mentioned herein are property of their
respective companies.
© 2009, Microchip Technology Incorporated, Printed in the
U.S.A., All Rights Reserved.
Printed on recycled paper.
Microchip received ISO/TS-16949:2002 certification for its worldwide
headquarters, design and wafer fabrication facilities in Chandler and
Tempe, Arizona; Gresham, Oregon and design centers in California
and India. The Company’s quality system processes and procedures
are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping
devices, Serial EEPROMs, microperipherals, nonvolatile memory and
analog products. In addition, Microchip’s quality system for the design
and manufacture of development systems is ISO 9001:2000 certified.
© 2009 Microchip Technology Inc.
DS22005B-page 31
WORLDWIDE SALES AND SERVICE
AMERICAS
ASIA/PACIFIC
ASIA/PACIFIC
EUROPE
Corporate Office
2355 West Chandler Blvd.
Chandler, AZ 85224-6199
Tel: 480-792-7200
Fax: 480-792-7277
Technical Support:
http://support.microchip.com
Web Address:
www.microchip.com
Asia Pacific Office
Suites 3707-14, 37th Floor
Tower 6, The Gateway
Harbour City, Kowloon
Hong Kong
Tel: 852-2401-1200
Fax: 852-2401-3431
India - Bangalore
Tel: 91-80-3090-4444
Fax: 91-80-3090-4080
India - New Delhi
Tel: 91-11-4160-8631
Fax: 91-11-4160-8632
Austria - Wels
Tel: 43-7242-2244-39
Fax: 43-7242-2244-393
Denmark - Copenhagen
Tel: 45-4450-2828
Fax: 45-4485-2829
India - Pune
Tel: 91-20-2566-1512
Fax: 91-20-2566-1513
France - Paris
Tel: 33-1-69-53-63-20
Fax: 33-1-69-30-90-79
Japan - Yokohama
Tel: 81-45-471- 6166
Fax: 81-45-471-6122
Germany - Munich
Tel: 49-89-627-144-0
Fax: 49-89-627-144-44
Atlanta
Duluth, GA
Tel: 678-957-9614
Fax: 678-957-1455
Boston
Westborough, MA
Tel: 774-760-0087
Fax: 774-760-0088
Chicago
Itasca, IL
Tel: 630-285-0071
Fax: 630-285-0075
Cleveland
Independence, OH
Tel: 216-447-0464
Fax: 216-447-0643
Dallas
Addison, TX
Tel: 972-818-7423
Fax: 972-818-2924
Detroit
Farmington Hills, MI
Tel: 248-538-2250
Fax: 248-538-2260
Kokomo
Kokomo, IN
Tel: 765-864-8360
Fax: 765-864-8387
Los Angeles
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Tel: 949-462-9523
Fax: 949-462-9608
Santa Clara
Santa Clara, CA
Tel: 408-961-6444
Fax: 408-961-6445
Toronto
Mississauga, Ontario,
Canada
Tel: 905-673-0699
Fax: 905-673-6509
Australia - Sydney
Tel: 61-2-9868-6733
Fax: 61-2-9868-6755
China - Beijing
Tel: 86-10-8528-2100
Fax: 86-10-8528-2104
China - Chengdu
Tel: 86-28-8665-5511
Fax: 86-28-8665-7889
Korea - Daegu
Tel: 82-53-744-4301
Fax: 82-53-744-4302
China - Hong Kong SAR
Tel: 852-2401-1200
Fax: 852-2401-3431
Korea - Seoul
Tel: 82-2-554-7200
Fax: 82-2-558-5932 or
82-2-558-5934
China - Nanjing
Tel: 86-25-8473-2460
Fax: 86-25-8473-2470
Malaysia - Kuala Lumpur
Tel: 60-3-6201-9857
Fax: 60-3-6201-9859
China - Qingdao
Tel: 86-532-8502-7355
Fax: 86-532-8502-7205
Malaysia - Penang
Tel: 60-4-227-8870
Fax: 60-4-227-4068
China - Shanghai
Tel: 86-21-5407-5533
Fax: 86-21-5407-5066
Philippines - Manila
Tel: 63-2-634-9065
Fax: 63-2-634-9069
China - Shenyang
Tel: 86-24-2334-2829
Fax: 86-24-2334-2393
Singapore
Tel: 65-6334-8870
Fax: 65-6334-8850
China - Shenzhen
Tel: 86-755-8203-2660
Fax: 86-755-8203-1760
Taiwan - Hsin Chu
Tel: 886-3-6578-300
Fax: 886-3-6578-370
China - Wuhan
Tel: 86-27-5980-5300
Fax: 86-27-5980-5118
Taiwan - Kaohsiung
Tel: 886-7-536-4818
Fax: 886-7-536-4803
China - Xiamen
Tel: 86-592-2388138
Fax: 86-592-2388130
Taiwan - Taipei
Tel: 886-2-2500-6610
Fax: 886-2-2508-0102
China - Xian
Tel: 86-29-8833-7252
Fax: 86-29-8833-7256
Thailand - Bangkok
Tel: 66-2-694-1351
Fax: 66-2-694-1350
Italy - Milan
Tel: 39-0331-742611
Fax: 39-0331-466781
Netherlands - Drunen
Tel: 31-416-690399
Fax: 31-416-690340
Spain - Madrid
Tel: 34-91-708-08-90
Fax: 34-91-708-08-91
UK - Wokingham
Tel: 44-118-921-5869
Fax: 44-118-921-5820
China - Zhuhai
Tel: 86-756-3210040
Fax: 86-756-3210049
03/26/09
DS22005B-page 32
© 2009 Microchip Technology Inc.