1N5221-1N5281 SILICON ZENER DIODES High-reliability discrete products and engineering services since 1977 FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. Part numbers listed indicate a tolerance of ±20% with guaranteed limits on only, VZ, IR and VF. Devices with guaranteed limits on all six parameters are indicated by suffix A for ±10% tolerance, suffix B for a ±5% tolerance, suffix C for a 2% tolerance and suffix D for a 1% tolerance. MAXIMUM RATINGS Operating and Storage Temperature DC Power Dissipation Power Derating Forward Voltage @ 200mA -65°C to + 200°C 500 mW 3.33 mW/C° above 25°C 1.1 Volts ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Part Number (1) 1N5221 1N5222 1N5223 1N5224 1N5225 1N5226 1N5227 1N5228 1N5229 1N5230 1N5231 1N5232 1N5233 1N5234 1N5235 1N5236 1N5237 1N5238 1N5239 1N5240 1N5241 1N5242 1N5243 1N5244 1N5245 1N5246 1N5247 1N5248 1N5249 1N5250 1N5251 1N5252 1N5253 1N5254 1N5255 1N5256 1N5257 1N5258 1N5259 1N5260 Nominal Zener Voltage VZ @ IZT Volts 2.4 2.5 2.7 2.8 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.0 6.2 6.8 7.5 8.2 8.7 9.1 10 11 12 13 14 15 16 17 18 19 20 22 24 25 27 28 30 33 36 39 43 Test Current IZT mA 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 9.5 9.0 8.5 7.8 7.4 7.0 6.6 6.2 5.6 5.2 5.0 4.6 4.5 4.2 3.8 3.4 3.2 3.0 Max Reverse Leakage Current Max Zener Impedance (2) A&B Suffix Only ZZT @ IZT Ohms ZZT @ IZK=0.25mA Ohms 30 30 30 30 29 28 24 23 22 19 17 11 7.0 7.0 5.0 6.0 8.0 8.0 10 17 22 30 13 15 16 17 19 21 23 25 29 33 35 41 44 49 58 70 80 93 1200 1250 1300 1400 1600 1600 1700 1900 2000 1900 1600 1600 1600 1000 750 500 500 600 600 600 600 600 600 600 600 600 600 600 600 600 600 600 600 600 600 600 700 700 800 900 A, B, & D Suffix Only IR VR µA @ Volts 100 100 75 75 50 25 15 10 5.0 5.0 5.0 5.0 5.0 5.0 3.0 3.0 3.0 3.0 3.0 3.0 2.0 1.0 0.5 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 A B,C &D 0.95 0.95 0.95 0.95 0.95 0.95 0.95 0.95 0.95 1.9 1.9 2.9 3.3 3.8 4.8 5.7 6.2 6.2 6.7 7.6 8.0 8.7 9.4 9.5 10.5 11.4 12.4 13.3 13.3 14.3 16.2 17.1 18.1 20 20 22 24 26 29 31 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 2.0 2.0 3.0 3.5 4.0 5.0 6.0 6.5 6.5 7.0 8.0 8.4 9.1 9.9 10 11 12 13 14 14 15 17 18 19 21 21 23 25 27 30 33 Non Suffix IR @ VR Used For Suffix A µA Max Zener Voltage Temp. Coeff. (A&B Suffix Only) αVZ (%/°C)(3) 200 200 150 150 100 100 100 75 50 50 50 50 50 50 30 30 30 30 30 30 30 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 -0.085 -0.085 -0.080 -0.080 -0.075 -0.070 -0.065 -0.060 ±0.055 ±0.030 ±0.030 +0.038 +0.038 +0.045 +0.050 +0.058 +0.062 +0.065 +0.068 +0.075 +0.076 +0.077 +0.079 +0.082 +0.082 +0.083 +0.084 +0.085 +0.086 +0.086 +0.087 +0.088 +0.089 +0.090 +0.091 +0.091 +0.092 +0.093 +0.094 +0.095 Rev. 20120712 1N5221-1N5281 SILICON ZENER DIODES High-reliability discrete products and engineering services since 1977 Part Number (1) 1N5261 1N5262 1N5263 1N5264 1N5265 1N5266 1N5267 1N5268 1N5269 1N5270 1N5271 1N5272 1N5273 1N5274 1N5275 1N5276 1N5277 1N5278 1N5279 1N5280 1N5281 Nominal Zener Voltage VZ @ IZT Volts 47 51 56 60 62 68 75 82 87 91 100 110 120 130 140 150 160 170 180 190 200 Test Current IZT mA 2.7 2.5 2.2 2.1 2.0 1.8 1.7 1.5 1.4 1.4 1.3 1.1 1.0 0.95 0.90 0.85 0.80 0.74 0.68 0.66 0.65 Max Reverse Leakage Current Max Zener Impedance A&B Suffix Only(2) ZZT @ IZT Ohms ZZT @ IZK=0.25mA Ohms 105 125 150 170 185 230 270 330 370 400 500 750 900 1100 1300 150 170 190 2200 2400 2500 1000 1100 1300 1400 1400 1600 1700 2000 2200 2300 2600 3000 4000 4500 4500 5000 5500 5500 6000 6500 7000 IR µA 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 A, B, & D Suffix Only VR @ Volts Non Suffix IR @ VR Used For Suffix A µA A B,C&D 34 37 41 44 45 49 53 59 65 66 72 80 86 94 101 108 116 123 130 137 144 36 39 43 46 47 52 56 62 68 69 76 84 91 99 106 114 122 129 137 144 152 Max Zener Voltage Temp. Coeff. (A&B Suffix Only) αVZ (%/°C)(3) 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 +0.095 +0.096 +0.096 +0.097 +0.097 +0.097 +0.098 +0.098 +0.099 +0.099 +0.110 +0.110 +0.110 +0.110 +0.110 +0.110 +0.110 +0.110 +0.110 +0.110 +0.110 NOTE 1: The electrical characteristics are measured after allowing the device to stabilize for 20 seconds when mounted with a 3/8” minimum lead length from the case. NOTE 2: The zener impedance is derived from the 60HZ ac voltage, which results when an ac current having an r.m.s. value equal to 10% of the DC zener current (IZT or I ZK) is superimposed on IZT or I ZK. Zener impedance is measured at two points to insure a sharp knee on the breakdown curve, thereby eliminating unstable units. NOTE 3: Temperature coefficient (αVZ). Test conditions for temperature coefficient are a follows: a. IZT = 7.5 mA, T1 = 25°C, T2 = 125°C (1N5221A, thru 1N5242A, B.) b. IZT = Rated IZT, T1 = 25°C, T2 = 125°C (1N5243A, B thru 1N5281A, B.) Device to be temperature stabilized with current applied prior to reading breakdown voltage at the specified ambient temperature. Rev. 20120712 High-reliability discrete products and engineering services since 1977 1N5221-1N5281 SILICON ZENER DIODES MECHANICAL CHARACTERISTICS Case: DO-35 Marking: Body painted, alpha-numeric Polarity: Cathode band Rev. 20120712 High-reliability discrete products and engineering services since 1977 1N5221-1N5281 SILICON ZENER DIODES Rev. 20120712