CO M PL IA NT TISP61089BSD *R oH S DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS TISP61089BSD High Voltage Ringing SLIC Protector Dual Voltage-Programmable Protectors - Supports Battery Voltages Down to -155 V - Low 5 mA max. Gate Triggering Current - High 150 mA min. Holding Current 8-SOIC Package (Top View) (Tip) K1 1 8 NC (Gate) G 2 7 A (Ground) NC 3 6 A (Ground) K2 4 5 NC Rated for LSSGR ‘1089 Conditions 2/10 Overshoot Voltage Specified (Ring) Impulse Waveshape '1089 Test ITSP Section Test # 4.5.7 4 4.5.8 1 10/360 4.5.7 2, 5 30 10/1000 4.5.7 1,3 30 2/10 60 Hz Power 120 '1089 Test Section Test # A 0.5 s 4.5.12 9 6.5 1s 4.5.12 3, 4, 8 4.6 2s 4.5.12 7 3.4 4.5.12 5 4.5.13 2, 3 30 s 900 s Device Symbol K1 ITSM Fault Time 5s MD6XBE NC - No internal connection Terminal typical application names shown in parenthesis A 4.5.12 6 4.5.12 1, 2 4.5.13 1, 4, 5 A G A K2 2.3 SD6XAU 1.3 Rated for ITU-T K.20, K.21 and K.45 0.73 Waveshape 4.5.15/16 Element ITSP Voltage Current A 10/700 5/310 40 ITM = 100 A, di/dt = 80 A/µs V Diode 10 SCR 12 ..................................................UL Recognized Component How to Order Device Package Carrier Order As Marking Code Standard Quantity TISP61089BSD 8-SOIC Embossed Tape Reeled TISP61089BSDR-S 1089BS 2500 Description The TISP61089BSD is a dual forward-conducting buffered p-gate thyristor (SCR) overvoltage protector. It is designed to protect monolithic SLICs (Subscriber Line Interface Circuits) against overvoltages on the telephone line caused by lightning, a.c. power contact and induction. The TISP61089BSD limits voltages that exceed the SLIC supply rail voltage. The TISP61089BSD parameters are specified to allow equipment compliance with Telcordia GR-1089-CORE, Issue 3 and ITU-T recommendations K.20, K.21 and K.45. *RoHS Directive 2002/95/EC Jan 27 2003 including Annex SEPTEMBER 2005 - REVISED MAY 2007 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP61089BSD High Voltage Ringing SLIC Protector Description (Continued) The SLIC line driver section is typically powered from 0 V (ground) and a negative voltage in the region of -20 V to -150 V. The protector gate is connected to this negative supply. This references the protection (clipping) voltage to the negative supply voltage. The protection voltage will then track the negative supply voltage and the overvoltage stress on the SLIC is minimized. Positive overvoltages are clipped to ground by diode forward conduction. Negative overvoltages are initially clipped close to the SLIC negative supply rail value. If sufficient current is available from the overvoltage, then the protector SCR will switch into a low voltage on-state condition. As the overvoltage subsides the high holding current of TISP61089BSD SCR helps prevent d.c. latchup. The TISP61089BSD is intended to be used with a series combination of a 40 Ω or higher resistance and a suitable overcurrent protector. Power fault compliance requires the series overcurrent element to open-circuit or become high impedance (see Applications Information). For equipment compliant to ITU-T recommendations K.20 or K.21 or K.45 only, the series resistor value is set by the coordination requirements. For coordination with a 400 V limit GDT, a minimum series resistor value of 10 Ω is recommended. These monolithic protection devices are fabricated in ion-implanted planar vertical power structures for high reliability and in normal system operation they are virtually transparent. The TISP61089BSD buffered gate design reduces the loading on the SLIC supply during overvoltages caused by power cross and induction. The TISP61089BSD is available in 8-pin plastic small-outline surface mount package. Absolute Maximum Ratings, -40 °C ≤ TJ ≤ 85 °C (Unless Otherwise Noted) Symbol Value Unit Repetitive peak off-state voltage, VGK = 0 Rating VDRM -170 V Repetitive peak gate-cathode voltage, VKA = 0 VGKRM -167 V Non-repetitive peak on-state pulse current (see Notes 1 and 2) 10/1000 µs (Telcordia GR-1089-CORE, Issue 3, October 2002, Section 4) 30 5/320 µs (ITU-T K.20, K.21& K.45, K.44 open-circuit voltage wave shape 10/700 µs) 10/360 µs (Telcordia GR-1089-CORE, Issue 3, October 2002, Section 4) 40 ITSP 1.2/50 µs (Telcordia GR-1089-CORE, Issue 3, October 2002, Section 4) 2/10 µs (Telcordia GR-1089-CORE, Issue 3, October 2002, Section 4) 40 A 100 120 TJ = 25 °C 170 Non-repetitive peak on-state current, 60 Hz (see Notes 1, 2 and 3) 0.5 s 6.5 1s 4.6 ITSM 2s 5s 3.4 30 s 1.3 900 s 0.73 Non-repetitive peak gate current,1/2 µs pulse, cathodes commoned (see Notes 1 and 2) Operating free-air temperature range Junction temperature Storage temperature range A 2.3 IGSM +40 A TA -40 to +85 °C TJ -40 to +150 °C Tstg -40 to +150 °C NOTES: 1. Initially the protector must be in thermal equilibrium with -40 °C ≤ T J ≤ 85 °C. The surge may be repeated after the device returns to its initial conditions. 2. The rated current values may be applied either to the Ring to Ground or to the Tip to Ground terminal pairs. Additionally, both terminal pairs may have their rated current values applied simultaneously (in this case the Ground terminal current will be twice the rated current value of an individual terminal pair). Above 85 °C, derate linearly to zero at 150 °C lead temperature. 3. Values for V GG = -100 V. For values at other voltages see Figure 2. SEPTEMBER 2005 - REVISED MAY 2007 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP61089BSD High Voltage Ringing SLIC Protector Recommended Operating Conditions Component CG RS Min Typ TISP61089BSD gate decoupling capacitor 100 220 TISP61089BSD series resistor for GR-1089-CORE first-level and second-level surge survival 40 Ω TISP61089BSD series resistor for GR-1089-CORE intra-building port surge survival 8 Ω 10 Ω TISP61089BSD series resistor for K.20, K.21 and K.45 coordination with a 400 V primary protector Max Unit nF Electrical Characteristics, TJ = 25 °C (Unless Otherwise Noted) Parameter Test Conditions Max Unit TJ = 25 °C -5 µA TJ = 85 °C -50 µA -112 V 12 V IF = 5 A, tw = 200 µs 3 V 2/10 µs, IF = 100 A, di/dt = 80 A/µs, RS = 50 Ω, (see Note 4) 10 V ID Off-state current V(BO) Breakover voltage 2/10 µs, ITM = -100 A, di/dt = -80 A/µs, RS = 50 Ω, VGG = -100 V Gate-cathode impulse 2/10 µs, ITM = -100 A, di/dt = -80 A/µs, RS = 50 Ω, VGG = -100 V, VGK(BO) VF VFRM breakover voltage Forward voltage Peak forward recovery voltage VD = VDRM, VGK = 0 Min (see Note 4) IH Holding current IGKS Gate reverse current VGG = VGK = VGKRM, VKA = 0 Gate trigger current IGT VGT CKA Gate-cathode trigger voltage Cathode-anode offstate capacitance Typ IT = -1 A, di/dt = 1A/ms, VGG = -100 V -150 mA TJ = 25 °C -5 µA TJ = 85 °C -50 µA IT = -3 A, tp(g) ≥ 20 µs, VGG = -100 V 5 mA IT = -3 A, tp(g) ≥ 20 µs, VGG = -100 V 2.5 V f = 1 MHz, Vd = 1 V, IG = 0, (see Note 5) VD = -3 V 100 pF VD = -48 V 50 pF NOTES: 4. The diode forward recovery and the thyristor gate impulse breakover (overshoot) are not strongly dependent of the gate supply voltage value (V GG ). 5. These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The unmeasured device terminals are a.c. connected to the guard terminal of the bridge. Thermal Characteristics Parameter RθJA Junction to free air thermal resistance SEPTEMBER 2005 - REVISED MAY 2007 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. Test Conditions TA = 25 °C, EIA/JESD51-3 PCB, EIA/ JESD51-2 environment, PTOT = 1.7 W Min Typ Max Unit 120 °C/W TISP61089BSD High Voltage Ringing SLIC Protector Parameter Measurement Information +i Quadrant I IFSP (= |ITSP|) Forward Conduction Characteristic IFSM (= |ITSM |) IF VF V GK(BO) V GG -v VD +v ID I(BO) IH IS V(BO) VS VT IT ITSM Quadrant III Switching Characteristic ITSP -i PM6XAAA Figure 1. Voltage-Current Characteristic Unless Otherwise Noted, All Voltages are Referenced to the Anode SEPTEMBER 2005 - REVISED MAY 2007 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP61089BSD High Voltage Ringing SLIC Protector Thermal Information ITSM — Peak Non-Recurrent 50 Hz Current — A 20 TI61AF RING AND TIP TERMINALS: Equal ITSM values applied simultaneously GROUND TERMINAL: Current twice ITSM value 15 10 8 7 6 5 4 EIA /JESD51 Environment and PCB, TA = 25 °C 3 VGG = -80 V V GG = -60 V 2 1.5 1 0.8 0.7 0.6 0.5 0.01 VGG = -100 V V GG = -120 V 0.1 1 10 100 t — Current Duration — s Figure 2. Non-Repetitive Peak On-State Current against Duration SEPTEMBER 2005 - REVISED MAY 2007 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. 1000 20 ITSM — Peak Non-Recurrent 50 Hz Current — A PEAK NON-RECURRING AC vs CURRENT DURATION TYPICAL PEAK NON-RECURRING AC vs CURRENT DURATION TI61DA RING AND TIP TERMINALS: Equal ITSM values applied simultaneously GROUND TERMINAL: Current twice ITSM value Typical PCB Mounting, TA = 25 °C 15 10 8 7 6 5 4 VGG = -80 V 3 VGG = -60 V 2 1.5 1 0.8 0.7 0.6 0.5 0.01 VGG = -100 V VGG = -120 V 0.1 1 10 100 t — Current Duration — s 1000 Figure 3. Typical Non-Repetitive Peak On-state Current against Duration TISP61089BSD High Voltage Ringing SLIC Protector APPLICATIONS INFORMATION Operation of Ringing SLICs using Multiple Negative Voltage Supply Rails Figure 4 shows a typical powering arrangement for a multi-supply rail SLIC. VBATL is a lower (smaller) voltage supply than VBATH. With supply switch S1 in the position shown, the line driver amplifiers are powered between 0 V and VBATL. This mode minimizes the power consumption for short loop transmission. For long loops and to generate ringing, the driver voltage is increased by operating S1 to connect VBATH. These conditions are shown in Figure 5. SLIC 0V S1 V BATL V BATH LINE LINE DRIVERS SUPPLY SWITCH AI6XCC Figure 4. SLIC with Voltage Supply Switching 0V 0V 0V V SLICG V PKRING/2 V BATL V PKRING/2 V BATH V DCRING V PKRING/2 V PKRING/2 V SLICH V BATH SHORT LOOP LONG LOOP V BATH RINGING AI6XCD Figure 5. Driver Supply Voltage Levels Conventional ringing is typically unbalanced ground or battery backed. To minimize the supply voltage required, most multi-rail SLICs use balanced ringing as shown in Figure 5. The ringing has d.c., VDCRING, and a.c., VPKRING, components. A 70 V r.m.s. a.c. sinusoidal ring signal has a peak value, VPKRING, of 99 V. If the d.c. component was 20 V, then the total voltage swing needed would be 99 + 20 = 119 V. There are internal losses in the SLIC from ground, VSLICG, and the negative supply, VSLICH. The sum of these two losses generally amounts to a total of 10 V. This makes a total, VBATH, supply rail value of 119 + 10 = 129 V. In some cases a trapezoidal a.c. ring signal is used. This would have a peak to r.m.s ratio (crest factor) of about 1.25, increasing the r.m.s. a.c. ring level by 13 %. The d.c. ring voltge may be lowered for short loop applications. SEPTEMBER 2005 - REVISED MAY 2007 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP61089BSD High Voltage Ringing SLIC Protector SLIC Parameter Values The table below shows some details of HV SLICs using multiple negative supply rails. Manufacturer INFINEON‡ LEGERITY™‡ SLIC Series SLIC-P‡ ISLIC™‡ SLIC # PEB 4266 79R241 79R101 79R100 Data Sheet Issue 14/02/2001 -/08/2000 -/07/2000 -/07/2000 Short Circuit Current 110 150 150 150 mA Unit VBATH max. -155 -104 -104 -104 V VBATL max. -150 -104 VBATH VBATH V AC Ringing for: 85 45† 50† 55† V rms Crest Factor 1.4 1.4 1.4 1.25 VBATH -70 -90 -99 -99 V VBATR -150 -36 -24 -24 V R or T Power Max. < 10 ms 10 W R or T Overshoot < 10 ms TBD TBD R or T Overshoot < 1 ms -10 +10 R or T Overshoot < 1 µs -10 +30 R or T Overshoot < 250 ns Line Feed Resistance -5 5 -10 5 -10 5 -10 10 -15 8 -15 8 15 -20 12 -20 V -15 20 + 30 V 50 50 12 50 V V Ω † Assumes -20 V battery voltage during ringing. ‡ Legerity, the Legerity logo and ISLIC are the trademarks of Legerity, Inc. (formerly AMD's Communication Products Division). Other product names used in this publication are for identification purposes only and may be trademarks of their respective companies. From the table, the maximum supply voltage, VBATH, is -155 V. In terms of minimum voltage overshoot limits, -10 V and +8 V are needed for 1 µs and -15 V, +12 V are needed for 250 ns. To maintain these voltage limits over the temperature range, 25 °C values of -12 V, +10 V are needed for 250 ns. It is important to define the protector overshoot under the actual circuit current conditions. For example, if the series line feed resistor was 40 Ω, R1 in Figure 12, and Telcordia GR-1089-CORE 2/10 and 10/1000 first level impulses were applied, the peak protector currents would be 56 A and 20 A. At the second level, the 2/10 impulse current would be 100 A. Therefore, the protector voltage overshoot should be guaranteed to not exceed the SLIC voltage ratings at 100 A, 2/10 and 20 A, 10/1000. In practice, as the 2/10 waveshape has the highest current (100 A) and fastest di/dt (80 A/µs) the overshoot level testing can restricted to the be 2/10 waveshape. Using the table values for maximum battery voltage and minimum overshoot gives a protection device requirement of -170 V and +12 V from the output to ground. There needs to be temperature guard banding for the change in protector characteristics with temperature. To cover down to -40 °C the 25 °C protector minimum values of become -185 V (VDRM) on the cathode and -182 V (VGKS) on the gate. Gated Protectors This section covers four topics. Firstly, it is explained why gated protectors are needed. Second, the voltage limiting action of the protector is described. Third, how the withstand voltages of the TISP61089BSD junctions are set. Fourth, an example application circuit is described. Purpose of Gated Protectors Fixed voltage thyristor overvoltage protectors have been used since the early 1980s to protect monolithic SLICs (Subscriber Line Interface Circuits) against overvoltages on the telephone line caused by lightning, a.c. power contact and induction. As the SLIC was usually powered from a fixed voltage negative supply rail, the limiting voltage of the protector could also be a fixed value. The TISP1072F3 is a typical example of a fixed voltage SLIC protector. SEPTEMBER 2005 - REVISED MAY 2007 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP61089BSD High Voltage Ringing SLIC Protector Gated Protectors (Continued) SLICs have become more sophisticated. To minimize power consumption, some designs automatically adjust the driver supply voltage to a value that is just sufficient to drive the required line current. For short lines the supply voltage would be set low, but for long lines, a higher supply voltage would be generated to drive sufficient line current. The optimum protection for this type of SLIC would be given by a protection voltage which tracks the SLIC supply voltage. This can be achieved by connecting the protection thyristor gate to the SLIC VBATH supply, Figure 6. This gated (programmable) protection arrangement minimizes the voltage stress on the SLIC, no matter what value of supply voltage. TIP WIRE 600 Ω TISP61089BSD SLIC R1 40 Ω V BATL GENERATOR SOURCE RESISTANCE SWITCHING MODE POWER SUPPLY Tx R2 40 Ω 600 Ω ISLIC RING WIRE A.C. GENERATOR 0 - 600 V r.m.s. C2 IG C1 220 nF IBATH V BATH D1 AI6XCCa Figure 6. TISP61089BSD Buffered Gate Protector ('1089 Section 4.5.12 Testing) SLIC PROTECTOR IF Th5 IK SLIC PROTECTOR SLIC V BATH Th5 TISP 61089BSD TISP IG 61089BSD AI6XAHBa SLIC C1 220 nF Figure 7. Negative Overvoltage Condition V BATH AI6XAIBa C1 220 nF Figure 8. Positive Overvoltage Condition Operation of Gated Protectors Figure 7 and Figure 8 show how the TISP61089BSD limits negative and positive overvoltages. Positive overvoltages (Figure 8) are clipped by the antiparallel diode of Th5 and the resulting current is diverted to ground. Negative overvoltages (Figure 7) are initially clipped close to the SLIC negative supply rail value (VBATH). If sufficient current is available from the overvoltage, then Th5 will switch into a low voltage on-state condition. As the overvoltage subsides the high holding current of Th5 prevents d.c. latchup. The protection voltage will be the sum of the gate supply (VBATH) and the peak gate-cathode voltage (VGK(BO)). The protection voltage will be increased if there is a long connection between the gate decoupling capacitor, C1, and the gate terminal. During the initial rise of a fast impulse, the gate current (IG) is the same as the cathode current (IK). Rates of 80 A/µs can cause inductive voltages of 0.8 V in 2.5 cm of printed wiring track. To minimize this inductive voltage increase of SEPTEMBER 2005 - REVISED MAY 2007 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP61089BSD High Voltage Ringing SLIC Protector Gated Protectors (Continued) protection voltage, the length of the capacitor to gate terminal tracking should be minimized. Inductive voltages in the protector cathode wiring will also increase the protection voltage. These voltages can be minimized by routing the SLIC connection through the protector as shown in Figure 6. Figure 9, which has a 10 A/µs rate of impulse current rise, shows a positive gate charge (QGS) of about 0.1 µC. With the 0.1 µF gate decoupling capacitor used, the increase in gate supply is about 1 V (= QGS/C1). This change is just visible on the -72 V gate voltage, VBATH. But, the voltage increase does not directly add to the protection voltage as the supply voltage change reaches a maximum at 0.4 µs, when the gate current reverses polarity, and the protection voltage peaks earlier at 0.3 µs. In Figure 9, the peak clamping voltage (V(BO)) is -77.5 V, an increase of 5.5 V on the nominal gate supply voltage. This 5.5 V increase is the sum of the supply rail increase at that time, (0.5 V), and the protection circuit’s cathode diode to supply rail breakover voltage (5 V). In practice, use of the recommended 220 nF gate decoupling capacitor would give a supply rail increase of about 0.3 V and a V(BO) value of about -77.3 V. 0 Voltage - V -20 VK -40 VBATH -60 -80 0.0 0.5 1.0 1.5 Time - µs AI6XDE 1 QGS IG Current - A 0 -1 -2 IK -3 -4 -5 0.0 0.5 1.0 1.5 Time - µs Figure 9. Protector Fast Impulse Clamping and Switching Waveforms Voltage Stress Levels on the TISP61089BSD Figure 10 shows the protector electrodes. The package terminal designated gate, G, is the transistor base, B, electrode connection and so is marked as B (G). The following junctions are subject to voltage stress: Transistor EB and CB, SCR AK (off state) and the antiparallel diode (reverse blocking). This clause covers the necessary testing to ensure the junctions are good. Testing transistor CB and EB: The maximum voltage stress level for the TISP61089BSD is VBATH with the addition of the short term antiparallel diode voltage overshoot, VFRM. The current flowing out of the G terminal is measured at VBATH plus VFRM. The SCR K terminal is shorted to the common (0 V) for this test (see Figure 10). The measured current, IGKS, is the sum of the junction currents ICB and IEB. SEPTEMBER 2005 - REVISED MAY 2007 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP61089BSD High Voltage Ringing SLIC Protector Gated Protectors (Continued) 0V ICB V BATH + VFRM B (G) K IGKS IEB TISP 61089BSD AI6XCEc Figure 10. Transistor CB AND EB Verification Testing transistor CB, SCR AK off state and diode reverse blocking: The highest AK voltage occurs during the overshoot period of the protector. To make sure that the SCR and diode blocking junctions do not break down during this period, a d.c. test for off-state current, ID, can be applied at the overshoot voltage value. To avoid transistor CB current amplification by the transistor gain, the transistor base-emitter is shorted during this test (see Figure 11). 0V 0V ICB V (BO) TISP 61089BSD IR B (G) ID(I) A K ID ID(I) is the internal SCR value of ID AI6XCFc Figure 11. Off-State Current Verification Summary: Two tests are need to verify the protector junctions. Maximum current values for IGKS and ID are required at the specified applied voltage conditions. OVERCURRENT PROTECTION TIP WIRE RING/TEST PROTECTION TEST RELAY RING RELAY SLIC RELAY Th1 R1a SLIC PROTECTOR S3a S1a SLIC Th4 S2a Th3 RING WIRE R1b Th5 Th2 TISP 3xxxF3 OR 7xxxF3 S3b S1b TISP 61089BSD S2b V BATH TEST EQUIPMENT RING GENERATOR C1 220 nF AI6XAJBa Figure 12. Typical Application Circuit SEPTEMBER 2005 - REVISED MAY 2007 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP61089BSD High Voltage Ringing SLIC Protector Application Circuit Figure 12 shows a typical TISP61089BSD SLIC card protection circuit. The incoming line conductors, Ring (R) and Tip (T), connect to the relay matrix via the series overcurrent protection. Fusible resistors, fuses and positive temperature coefficient (PTC) resistors can be used for overcurrent protection. Resistors will reduce the prospective current from the surge generator for both the TISP61089BSD and the ring/test protector. The TISP7xxxF3 protector has the same protection voltage for any terminal pair. This protector is used when the ring generator configuration may be ground or battery-backed. For dedicated ground-backed ringing generators, the TISP3xxxF3 gives better protection as its inter-conductor protection voltage is twice the conductor to ground value. Relay contacts 3a and 3b connect the line conductors to the SLIC via the TISP61089BSD protector. The protector gate reference voltage comes from the SLIC negative supply (VBATH). A 220 nF gate capacitor sources the high gate current pulses caused by fast rising impulses. LSSGR 1089 GR-1089-CORE, “1089”, covers electromagnetic compatibility and electrical safety generic criteria for US network telecommunication equipment. It is a module in Volume 3 of LSSGR (LATA (Local Access Transport Area) Switching Systems Generic Requirements, FR-NWT-000064). In ‘1089 surge and power fault immunity tests are done at two levels. After first-level testing the equipment shall not be damaged and shall continue to operate correctly. Under second level testing the equipment shall not become a safety hazard. The equipment is permitted to fail as a result of second-level testing. When the equipment is to be located on customer premises, second-level testing includes a wiring simulator test, which requires the equipment to reduce the power fault current below certain values. The following clauses reference the ‘1089 section and calculate the protector stress levels. The TISP61089BSD needs a 40 Ω series resistor to survive second level surge testing. ‘1089 Section 4.5.5 - Test Generators The generic form of test generator is shown in Figure 13. It emphasizes that multiple outputs must be independent, i.e. the loading condition of one output must not affect the waveforms of the other outputs. It is a requirement that the open-circuit voltage and short circuit current waveforms be recorded for each generator output used for testing. The fictive impedance of a generator output is defined as the peak opencircuit voltage divided by the peak short-circuit current. Specified impulse waveshapes are maximum rise and minimum decay times. Thus the 10/1000 waveshape should be interpreted as <10/>1000 and not the usually defined nominal values which have a tolerance. Z Output 1 Z Output 2 Z Output n Z Output n + 1 or Z is the fictive current-limiting impedance in each output feed Return Generic Lightning or AC Test Generator Figure 13. '1089 Test Generators SEPTEMBER 2005 - REVISED MAY 2007 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. AI6XCJ TISP61089BSD High Voltage Ringing SLIC Protector ‘1089 Section 4.5.5 - Test Generators (Continued) The exception to these two conditions of independence and limit waveshape values is the alternative IEEE C.62.41, 1.2/50-8/20 combination wave generator, which may be used for testing in ‘1089 Sections 4.5.7, 4.5.8 and 4.5.9. Here, the quoted waveshape values are nominal with defined tolerance. The open-circuit voltage waveshape is 1.2 µs ±0.36 µs front time and 50 µs ±10 µs duration. The short-circuit current waveshape is 8 µs +1.0 µs, -2.5 µs front time and 20 µs +8 µs, -4 µs duration. The generator fictive source impedance (peak open-circuit voltage divided by peak short-circuit current) is 2.0 Ω ±0.25 Ω. To get the same peak short-circuit currents as the 2/10 generator, for the same peak open-circuit voltage setting, ‘1089 specifies that the 1.2/50-8/20 generator be used with external resistors for current limiting and sharing. When working into a finite resistive load the delivered 1.2/50-8/20 generator current waveshape moves towards the 1.2/50 voltage waveshape. Thus, although the 1.2/50-8/20 delivered peak current is similar to the 2/10 generator, the much longer current duration means that a much higher stress is imposed on the equipment protection circuit. This can cause fuses to operate which are perfectly satisfactory on the normal 2/10 generator. Testing with the 1.2/50-8/20 generator gives higher stress levels than the 2/10 generator and, because it is little used, will not be covered in this analysis. Output 1 Ring V1 Output 2 Tip V2 Ground Return AI6XCK Test Generator EUT (Equipment Under Test) Figure 14. Longtitudinal (also Called Common Mode) Testing Output 1 Ring V1 Output 2 Tip Return Ground EUT (Equipment Under Test) Test Generator Output 1 Ring Output 2 Tip V2 Return Ground AI6XCM Test Generator EUT (Equipment Under Test) Figure 15. Transverse (also Called Differential or Metallic) Testing SEPTEMBER 2005 - REVISED MAY 2007 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP61089BSD High Voltage Ringing SLIC Protector ‘1089 Section 4.5.6 - Test Connections The telecommunications port R and T terminals may be tested simultaneously or individually. Figure 14 shows connection for simultaneous (longitudinal) testing. Figure 15 shows the two connections necessary to individually test the R and T terminals during transverse testing. The values of protector current are calculated by dividing the open-circuit generator voltage by the total circuit resistance. The total circuit resistance is the sum of the generator fictive source resistance and the TISP61089BSD series resistor value. The starting point of this analysis is to calculate the minimum circuit resistance for a test by dividing the generator open-circuit voltage by the TISP61089BSD rating. Subtracting the generator fictive resistance from the minimum circuit resistance gives the lowest value of series resistance that can be used. This is repeated for all test connections. As the series resistance must be a fixed value, the value used has to be the highest value calculated from all the considered test connections. Where both 10/1000 and 2/10 waveshape testing occurs, the 10/1000 test connection gives the highest value of minimum series resistance. Unless otherwise stated the analysis assumes a -40 °C to +85 °C temperature range. ‘1089 Section 4.5.7 - First-Level Lightning Surge Testing Table 1 shows the tests for this section. The peak TISP61089BSD current, ITM, is calculated by dividing the generator open voltage by the sum of the generator fictive source and the line feed, RS, resistance values. Columns 9 and 10 show the resultant currents for RS values of 25 Ω and 40 Ω. The TISP61089BSD rated current values at the various waveshapes are higher than those listed in Table 1. Used with the specified values of RS, the TISP61089BSD will survive these tests. Table 1. First-Level Surge Currents Surge # Waveshape Open-circuit Voltage V Short-circuit Current A No of Tests Test Connections Primary Fitted Generator Fictive Source Resistance Ω TISP61089BSD ITM A Rs = 25 Ω Rs = 40 Ω 1 10/1000 600 100 +25, -25 Transverse & Longitudinal No 6 19 & 2x19 13 & 2x13 2 10/360 1000 100 +25, -25 Transverse & Longitudinal No 10 29 & 2x29 20 & 2x20 3 10/1000 1000 100 +25, -25 Transverse & Longitudinal No 10 29 & 2x29 20 & 2x20 4 2/10 2500 500 +10, -10 Longitudinal No 5 2x83 2x56 5 10/360 1000 25 +5, -5 Longitudinal No 40 2x15 2x13 NOTES: 1. Surge 3 may be used instead of Surge 1 and Surge 2. 2. Surge 5 is applied to multiple line pairs up to a maximum of 12. 3. If the equipment contains a voltage-limiting secondary protector, each test is repeated at a voltage just below the threshold of limiting. ‘1089 Section 4.5.8 - Second-Level Lightning Surge Testing Table 2 shows the 2/10 test used for this section. Columns 9 and 10 show the resultant currents for RS values of 25 Ω and 40 Ω. Used with an RS of 40 Ω, the TISP61089BSD will survive this test. The 25 Ω value of RS is only intended to give first-level (Section 4.5.7) survival. Under second-level conditions, the peak current will be 2x143 A, which may result in failure of the 2x120 A rated TISP61089B. However, if the testing is done at or near 25 °C, the TISP61089BSD will survive with an RS value of 25 Ω as the 2/10 rating is 170 A at this temperature. Table 2. Second-Level Surge Current Surge # Waveshape Open-circuit Short-circuit No Voltage Current of V A Tests Test Primary Connections Fitted Generator TISP61089BSD ITM Fictive A Source Resistance Rs = 25 Ω Rs = 40 Ω 2x143 2x100 Ω 1 NOTE: 2/10 5000 500 +1, -1 Longitudinal No 10 1. If the equipment contains a voltage-limiting secondary protector, the test is repeated at a voltage just below the threshold of limiting. SEPTEMBER 2005 - REVISED MAY 2007 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP61089BSD High Voltage Ringing SLIC Protector ‘1089 Section 4.5.9 - Intra-Building Lightning Surge Testing This test is for network equipment ports that do not serve outside lines. Table 3 shows the 2/10 tests used for this section. Dedicated intrabuilding ports may use an RS value of 8 Ω. The 8 Ω value is set by the intra-building second level a.c. testing of Section 4.5.16. Columns 9, 10 and 11 show the resultant currents for RS values of 8 Ω, 25 Ω and 40 Ω. The listed currents are lower than the TISP61089BSD current rating of 2x120 A and the TISP61089BSD will survive these tests. Table 3. Intra-building Lightning Surge Currents Surge # Waveshape Open-circuit Short-circuit No Voltage Current of V A Tests Test Primary Connections Fitted Generator TISP61089BSD ITM Fictive A Source Resistance Rs = 8 Ω Rs = 25 Ω Rs = 40 Ω Ω 1 2/10 800 100 +1, -1 Transverse NA 8 50 24 17 2 2/10 1500 100 +1, -1 Longitudinal NA 15 2x65 2x38 2x27 NOTE: 1. If the equipment contains a voltage-limiting secondary protector, the test is repeated at a voltage just below the threshold of limiting. ‘1089 Section 4.5.11 - Current-Limiting Protector Testing Equipment that allows unacceptable current to flow during power faults (Figure 16) shall be specified to use an appropriate current-limiting protector. The equipment performance can be determined by testing with a series fuse, which simulates the safe current levels of a telephone cable. If this fuse opens, the equipment allows unacceptable current flow and an external current-limiting protector must be specified. For acceptable currents, the equipment must not allow current flows for times that would operate the simulator. The wiring simulator fuse currenttime characteristic shall match the boundary of Figure 16. A Bussmann MDQ-16/10 fuse often specified as meeting this requirement, Figure 17. MDQ-16/10 OPERATING CURRENT vs AVERAGE MELT TIME TI6LAH 80 70 60 50 80 70 60 50 40 40 30 25 30 25 Current — A rms Current — A rms '1089 WIRING SIMULATOR CURRENT vs TIME TI6LAG 20 UNACCEPTABLE REGION 15 10 8 7 6 5 ACCEPTABLE REGION 4 20 UNACCEPTABLE REGION 15 10 MDQ-16/10 8 7 6 5 4 3 2.5 3 2.5 2 0.01 0.1 1 10 t - Current Duration - s 100 Figure 16. Wiring Simulator Current-Time 1000 2 0.01 0.1 1 10 t - Current Duration - s 100 1000 Figure 17. MDQ-16/10 Current-Time SEPTEMBER 2005 - REVISED MAY 2007 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP61089BSD High Voltage Ringing SLIC Protector ‘1089 Section 4.5.11 - Current-Limiting Protector Testing (Continued) The test generator has a voltage source that can be varied from zero to 600 V rms and an output resistance of 20 Ω to each conductor. Table 4 shows the range of currents conducted by the TISP61089BSD. Table 4. Wiring Simulator Testing AC Duration s Open-Circuit Short-Circuit RMS Voltage RMS Current V A 0 to 600 0 to 30 900 Test Primary Connections Fitted Transverse & Longitudinal No Source TISP61089BSD ITM Resistance A (peak) Ω Rs = 25 Ω Rs = 40 Ω 20 0 to 2x19 0 to 2x14 ‘1089 Section 4.5.12 - First-Level Power Fault Testing Table 5 shows the nine tests used for this section. The TISP61089BSD will survive these peak current values as they are lower than the TISP61089BSD current-time ratings. Table 5. First-Level Power Fault Currents Open-circuit Short-circuit No RMS Voltage RMS Current of V A Tests 900 50 0.33 1 2 900 100 0.17 1 200 0.33 60 3 1 400 0.67 60 600 1.00 60 Test AC Duration # s 1 4 1 1000 1 60 5 5 600 0.09 60 6 30 600 0.5 1 7 2 600 2.2 1 8 1 600 3.0 1 9 0.5 1000 5 1 Test Primary Connections Fitted Transverse & Longitudinal Transverse & Longitudinal Transverse & Longitudinal Source Resistance TISP61089BSD ITM A (peak) Ω Rs = 25 Ω Rs = 40 Ω No 150 2x0.40 2x0.37 No 600 2x0.23 2x0.22 2x0.45 2x0.44 No 600 2x0.90 2x0.89 2x1.36 2x1.33 Longitudinal Yes 1000 2x1.38 2x1.30 Differential No Capacitive 2x0.12 2x0.12 No 1200 2x0.69 2x0.68 No 273 2x2.85 2x2.71 No 200 2x3.77 2x3.54 Yes 200 2x6.28 2x5.89 Transverse & Longitudinal Transverse & Longitudinal Transverse & Longitudinal Longitudinal NOTES: 1. If the equipment contains a voltage-limiting device or a current-limiting device, tests 1, 2 and 3 are repeated at a level just below the thresholds of the limiting devices. 2. Test 5 uses a special circuit with transformer coupled a.c. and capacitive feed. 3. Tests 1 through 5 are requirements and the equipment shall not be damaged after these tests. 4. Tests 6 through 9 are desirable objectives and the equipment can be damaged after these tests. ‘1089 Section 4.5.13 - Second-Level Power Fault Testing for Central Office Equipment Table 6 shows the five tests used for this section. Columns 9 and 10 show the prospective currents for these tests using RS values of 25 Ω and 40 Ω. The two most stressful tests of this section are test 1 and test 2. As shown in Table 6, the peak currents for these tests are 2x17 A and 2x7.7 A respectively. With the exception of test 5, all the other tests require the series overcurrent protection to operate before the TISP61089BSD current-time ratings are exceeded. In the case of test 2, with an RS of 25 Ω, the overcurrent protection must operate within the initial a.c. half cycle to prevent damage. SEPTEMBER 2005 - REVISED MAY 2007 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP61089BSD High Voltage Ringing SLIC Protector ‘1089 Section 4.5.13 - Second-Level Power Fault Testing for Central Office Equipment (Continued) Table 6. Second-Level Power Fault Currents Test AC Duration # s 1 900 Open-circuit Short-circuit No RMS Voltage RMS Current of V A Tests 120 25 277 Test Primary Connections Fitted 1 Transverse & 1 Longitudinal 2 5 600 60 1 3 5 600 7 1 4 900 100 to 0.37 to Transverse & 600 2.2 Longitudinal 5 900 600 0.09 Longitudinal Transverse & Longitudinal 60 Differential A (peak) Ω Rs = 25 Ω Rs = 40 Ω 5 2x5.78 2x3.8 11 2x11 2x7.7 No 10 2x24 2x17 No 86 2x7.7 2x6.8 No 270 2x2.9 2x2.7 No Capacitive 2x0.09 2x0.09 No Transverse & TISP61089BSD ITM Source Resistance NOTES: 1. If the equipment contains a voltage-limiting device or a current-limiting device, these tests are repeated at a level just below the thresholds of the limiting devices. 2. Test 5 uses a special circuit with transformer coupled a.c. and capacitive feed. ‘1089 Section 4.5.15 - Second-Level Power Fault Testing for Equipment Located on the Customer Premise This test, Table 7, is for network equipment located on the customer premises. The purpose is to ensure that the feed wiring does not become a hazard due to excessive current. This testing is similar to the Section 4.5.11 testing. If the equipment is directly wired, the wiring simulator described in Section 4.5.11 is replaced by a one-foot section of 26 AWG wrapped in cheesecloth. The equipment fails if an open circuit occurs or the cheesecloth is damaged. Table 7 shows the test conditions for this section. Columns 7 and 8 show the prospective currents using RS values of 25 Ω and 40 Ω. For the TISP61089BSD to survive, the series overcurrent protection to operate before the TISP61089BSD current-time ratings are exceeded. Table 7. Customer Premise Wiring Simulator Testing AC Duration s Open-circuit Short-circuit RMS Voltage RMS Current V A 0 to 600 0 to 30 900 NOTE: Test Primary Connections Fitted Transverse & Longitudinal No TISP61089BSD ITM Source A (peak) Resistance Ω Rs = 25 Ω Rs = 40 Ω 20 0 to 2x19 0 to 2x14 1. If the equipment interrupts the current before the 600 V rms level is reached a second piece of equipment is tested. The second piece of equipment shall withstand 600 V rms applied for 900 s without causing a hazard. ‘1089 Section 4.5.16 - Second-Level Intra-Building Power Fault Testing for Equipment Located on the Customer Premise This test, Table 8, is for network equipment ports that do not serve outside lines. For standard plugable premise wiring, the wiring simulator fuse shall be used for testing. Where direct wiring occurs, the simulator shall consist of a length of the wire used wrapped in cheesecloth. The equipment fails if a hazard occurs or a wiring simulator open circuit occurs or the cheesecloth is damaged. Table 8. Second-level Power Fault Currents Test AC Duration # s 1 900 NOTE: Open-circuit Short-circuit RMS Voltage RMS Current V A 120 25 No of Test Primary Tests Connections Fitted 1 Transverse & Longitudinal No Source Resistance Ω 5 TISP61089BSD ITM A (peak) Rs = 8 Ω Rs = 25 Ω Rs = 40 Ω 2x13 2x5.7 2x3.8 1. If the equipment contains a voltage-limiting device or a current-limiting device, these tests are repeated at a level just below the thresholds of the limiting devices. SEPTEMBER 2005 - REVISED MAY 2007 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP61089BSD High Voltage Ringing SLIC Protector ‘1089 Section 4.5.16 (Continued) Dedicated intra-building ports may use an RS value of 8 Ω. The 8 Ω value limits the initial current to 13 A, which is within the TISP61089BSD single cycle rating. For the TISP61089BSD to survive the full 900 s test, the series overcurrent protection has to operate before the TISP61089BSD current-time ratings are exceeded. Overcurrent and Overvoltage Protection Coordination To meet ‘1089, the overcurrent protection must be coordinated with the requirements of Sections 4.5.7, 4.5.8, 4.5.9, 4.5.12, 4.5.13, 4.5.15 and the TISP61089BSD. The overcurrent protection must not fail in the first level tests of Sections 4.5.7, 4.5.9 and 4.5.12 (tests 1 through 5). Test 6 through 9 of Section 4.5.12 are not requirements. The test current levels and their duration are shown in Figure 18. First level tests have a high source resistance and the current levels are not strongly dependent on the TISP61089BSD series resistor value. Second-level tests have a low source resistance and the current levels are dependent on the TISP61089BSD RS resistor value. The two stepped lines at the top of Figure 18 are for the 25 Ω and 40 Ω series resistor cases. The unacceptable current region (Section 4.5.11) is also shown in Figure 18. If current flows for the full second-level test time the unacceptable current region will be entered. The series overcurrent protector must operate before the unacceptable region is reached. MAXIMUM RMS CURRENT vs TIME 30 AI6XAKB 50 40 30 Second Level Tests, 25 Ω 10 7 5 Second Level Tests, 40 Ω 3 Objective First Level Tests # 6 through 9 2 1 0.7 0.5 First Level 0.3 through 5, 0.2 25 Ω & 40 Ω 0.1 0.01 Unacceptable Tests # 1 0.1 1 10 100 Time - s Figure 18. '1089 Test Current Levels 1000 Peak 50 Hz / 60 Hz Current — A Maximum RMS Current - A 20 PEAK AC vs CURRENT DURATION Second Level Tests, 25 Ω AI6XDM Unacceptable 20 15 Second Level Tests, 40 Ω 10 8 6 5 4 3 VGG = -60 V 2 1.5 1 0.8 0.6 0.5 0.4 0.3 0.2 0.15 0.01 First Level Tests # 1 through 5, 25 Ω & 40 Ω 0.1 VGG = -120 V 1 10 100 t — Current Duration — s 1000 Figure 19. TISP61089BSD Overlay Fusible overcurrent protectors cannot operate at first level current levels. Thus the permissible low current time-current boundary for fusible overcurrent protectors is formed by the first-level test currents. Automatically resetable overcurrent protectors (e.g. Positive Temperature Coefficient Thermistors) may operate during first level testing, but normal equipment working must be restored after the test has ended. At system level, the high current boundary is formed by the unacceptable region. However, component and printed wiring, PW, current limitations will typically lower the high current boundary. Although the series line feed resistance, RS, limits the maximum available current in second-level testing, after about 0.5 s this limitation will exceed the acceptable current flow values. These three boundaries, first-level, second-level and unacceptable, are replotted in terms of peak current rather than rms current values in Figure 19. Using a peak current scale allows the TISP61089BSD longitudinal current rating curves (Figure 3) to be added to Figure 19. Assuming the PW is sized to adequately carry any currents that may flow, the high current boundary for the overcurrent protector is formed by the TISP61089BSD rated current. Note that the TISP61089BSD rated current curve also depends on the value of gate supply voltage SEPTEMBER 2005 - REVISED MAY 2007 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP61089BSD High Voltage Ringing SLIC Protector Overcurrent and Overvoltage Protection Coordination (Continued) The overcurrent protector should not allow current-time durations greater than the TISP61089BSD current ratings otherwise the TISP61089BSD may fail. A satisfactory fusible resistor performance is shown in Figure 20. The line feed resistor (LFR) current-time curve is above the first level currents and below the TISP61089BSD rated current for VGG > -100 V. This particular curve is for a Bourns® 4B04B-523-400 2 x 40 Ω, 2 % tolerance, 0.5 % matched resistor module. Fusible resistors are also available with integrated thermal fuses or PTC thermistors. Thermal fuses will cause a rapid drop in the operating current after about 10 s. Figure 20 shows the fused LFR curve for a Bourns® 4B04B-524400 2 x 40 Ω, 2 % tolerance, 0.5 % matched resistor module with an integrated thermal fuse links. The Bourns® 4B04B-524-400 allows the TISP61089BSD to operate down to its full rated voltage of VGG = -155 V. An LFR with integrated PTC thermistors will give an automatically resetable current limiting function for all but the highest currents. PEAK AC vs CURRENT DURATION AI6XDKA Peak 50 Hz / 60 Hz Current — A 50 40 30 20 15 10 8 6 5 4 3 VGG = -120 V VGG = -60 V 2 1.5 LFR 1 0.8 0.6 0.5 0.4 0.3 First Level 0.2 0.15 0.01 Tests # 1 Fused LFR through 5, 25 Ω & 40 Ω 0.1 1 10 100 t — Current Duration — s 1000 Figure 20. Line Feed Resistor - with and without Thermal Fuse Ceramic PTC thermistors are available in suitable ohmic values to be used as the series line feed resistor RS. Figure 21 overlays a typical ceramic PTC thermistor operating characteristic. Some of the first level tests will cause thermistor operation. Generally the resistance matching stability of the two PTC thermistors after power fault switching lightning will meet the required line balance performance. Ceramic PTC thermistors reduce in resistance value under high voltage conditions. Under high current impulse conditions the resistance can be less than 50 % of the d.c. resistance. This means that more current than expected will flow under high voltage impulse conditions. The manufacturer should be consulted on the 2/10 currents conducted by their product under ‘1089 conditions. To keep the 2/10 current below 120 A may need an increase of the PTC thermistor d.c. resistance value to 50 Ω or more. In controlled temperature environments, where the temperature does not drop below freezing, the TISP61089BSD 2/10 capability is about 170 A, and this would allow a lower value of resistance. Generally polymer PTC thermistors are not available in sufficiently high ohmic values to be used as the only line feed resistance. To meet the required resistance value, an addition (fixed) series resistance can be used. Figure 22 overlays a typical polymer PTC thermistor operating characteristic. Compared to ceramic PTC thermistors, the lower thermal mass of the polymer type will generally give a faster current reduction time than the ceramic type. However, in this case the polymer resistance value is much less than the ceramic value. For the same current level, the dissipation in the polymer thermistor is much less than the ceramic thermistor. As a result the polymer thermistor is slower to operate than the ceramic one. The resistance stability of polymer PTC thermistors is not as good as ceramic ones. However, the thermistor resistance change will be diluted by additional series resistance. If a SLIC with adaptive line balance is used, thermistor resistance stability may not be a problem. Polymer PTC thermistors do not have a resistance decrease under high voltage conditions. SEPTEMBER 2005 - REVISED MAY 2007 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP61089BSD High Voltage Ringing SLIC Protector Overcurrent and Overvoltage Protection Coordination (Continued) PEAK AC vs CURRENT DURATION AI6XDIA 20 15 VGG = -120 V VGG = -60 V 1.5 1 0.8 0.6 0.5 0.4 0.3 0.2 0.15 0.01 First Level Tests # 1 through 5, 25 Ω & 40 Ω 0.1 1 10 100 t — Current Duration — s Figure 21. Ceramic PTC Thermistor SEPTEMBER 2005 - REVISED MAY 2007 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. 1000 AI6XDJA 50 40 30 Peak 50 Hz / 60 Hz Current — A Peak 50 Hz / 60 Hz Current — A 50 40 30 10 8 6 5 4 3 Ceramic PTC 2 Thermistor PEAK AC vs CURRENT DURATION 20 15 10 8 6 5 4 3 VGG = -120 V Polymer PTC Thermistor VGG = -60 V 2 1.5 1 0.8 0.6 0.5 0.4 0.3 0.2 0.15 0.01 First Level Tests # 1 through 5, 25 Ω & 40 Ω 0.1 1 10 100 t — Current Duration — s Figure 22. Polymer PTC Thermistor 1000 Bourns Sales Offices Region The Americas: Europe: Asia-Pacific: Phone +1-951-781-5500 +41-41-7685555 +886-2-25624117 Fax +1-951-781-5700 +41-41-7685510 +886-2-25624116 Phone +1-951-781-5500 +41-41-7685555 +886-2-25624117 Fax +1-951-781-5700 +41-41-7685510 +886-2-25624116 Technical Assistance Region The Americas: Europe: Asia-Pacific: www.bourns.com Bourns® products are available through an extensive network of manufacturer’s representatives, agents and distributors. To obtain technical applications assistance, a quotation, or to place an order, contact a Bourns representative in your area. “TISP” is a trademark of Bourns, Ltd., a Bourns Company, and is Registered in U.S. Patent and Trademark Office. “Bourns” is a registered trademark of Bourns, Inc. in the U.S. and other countries. COPYRIGHT© 2005, BOURNS, INC. LITHO IN U.S.A. e 10/05 TSP0505 SEPTEMBER 2005 - REVISED MAY 2007 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.