RHRU100120 Data Sheet January 2000 File Number 3145.3 100A, 1200V Hyperfast Diode Features The RHRU100120 is a hyperfast diode with soft recovery characteristics (trr < 90ns). It has half the recovery time of ultrafast diodes and is of silicon nitride passivated ion-implanted epitaxial planar construction. • Hyperfast with Soft Recovery . . . . . . . . . . . . . . . . . . <90ns This device is intended for use as a freewheeling/clamping diode and rectifier in a variety of switching power supplies and other power switching applications. Its low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. • Avalanche Energy Rated • Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . .1200V • Planar Construction Applications • Switching Power Supplies • Power Switching Circuits Formerly developmental type TA49070. • General Purpose Ordering Information PART NUMBER • Operating Temperature. . . . . . . . . . . . . . . . . . . . . . .175oC PACKAGE BRAND Packaging JEDEC STYLE TO-218 RHRU100120 TO-218 RHR100120 ANODE NOTE: When ordering, use the entire part number. Symbol CATHODE (FLANGE) K A Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RHRU100120 UNITS Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRRM 1200 V Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VRWM 1200 V DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VR 1200 V Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IF(AV) 100 A 200 A 1000 A Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Avalanche Energy (See Figures 7 and 8) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAVL 300 W 50 mJ Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TSTG, TJ -65 to 175 oC (TC = 62.5oC) Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFRM (Square Wave, 20kHz) Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM (Halfwave, 1 Phase, 60Hz) 3-1 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000 RHRU100120 TC = 25oC, Unless Otherwise Specified Electrical Specifications SYMBOL TEST CONDITION MIN TYP MAX UNITS IF = 100A - - 3.2 V IF = 100A, TC = 150oC - - 2.6 V VR = 1200V - - 250 µA VR = 1200V, TC = 150oC - - 2 mA IF = 1A, dIF/dt = 100A/µs - - 90 ns IF = 100A, dIF/dt = 100A/µs - - 100 ns ta IF = 100A, dIF/dt = 100A/µs - 60 - ns tb IF = 100A, dIF/dt = 100A/µs - 25 - ns - - 0.5 oC/W VF IR trr RθJC DEFINITIONS VF = Instantaneous forward voltage (pw = 300µs, D = 2%). IR = Instantaneous reverse current. trr = Reverse recovery time (See Figure 6), summation of ta + tb. ta = Time to reach peak reverse current (See Figure 6). tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 6). RθJC = Thermal resistance junction to case. pw = pulse width. D = duty cycle. Typical Performance Curves 500 1000 IR , REVERSE CURRENT (µA) IF, FORWARD CURRENT (A) 175oC 100 175oC 100oC 10 25oC 1 0 0.5 1 1.5 2 2.5 3 3.5 100oC 10 1 0.1 25oC 0.01 4 4.5 VF, FORWARD VOLTAGE (V) FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE 3-2 100 0 200 400 600 800 1000 1200 VR , REVERSE VOLTAGE (V) FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE RHRU100120 150 (Continued) TC = 25oC, dIF/dt = 100A/µs t, RECOVERY TIMES (ns) 125 100 trr 75 ta 50 tb 25 0 100 80 DC SQ. WAVE 60 40 20 0 25 100 10 1 IF(AV) , AVERAGE FORWARD CURRENT (A) Typical Performance Curves 50 75 100 125 150 175 TC , CASE TEMPERATURE (oC) IF, FORWARD CURRENT (A) FIGURE 3. trr, ta AND tb CURVES vs FORWARD CURRENT FIGURE 4. CURRENT DERATING CURVE Test Circuits and Waveforms VGE AMPLITUDE AND RG CONTROL dIF/dt t1 AND t2 CONTROL IF L DUT CURRENT SENSE RG IF + VGE - IGBT t1 VDD dIF trr dt ta tb 0 0.25 IRM t2 IRM FIGURE 5. trr TEST CIRCUIT FIGURE 6. trr WAVEFORMS AND DEFINITIONS IMAX = 1.6A L = 40mH R < 0.1Ω EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) VAVL L CURRENT SENSE R + VDD IL IL I V Q1 VDD DUT t0 FIGURE 7. AVALANCHE ENERGY TEST CIRCUIT t1 t2 t FIGURE 8. AVALANCHE CURRENT AND VOLTAGE WAVEFORMS All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site www.intersil.com 3-3