HCTS93MS Radiation Hardened 4-Bit Binary Ripple Counter August 1995 FeaturesIntersil Pinouts • 3 Micron Radiation Hardened SOS CMOS 14 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE (SBDIP) MIL-STD-1835 CDIP2-T14 TOP VIEW • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg • Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/ Bit-Day (Typ) • Dose Rate Survivability: >1 x 1012 RAD (Si)/s • Dose Rate Upset >1010 RAD (Si)/s 20ns Pulse • Latch-Up Free Under Any Conditions CP1 1 14 CP0 MR1 2 13 NC MR2 3 12 Q0 NC 4 11 Q3 VCC 5 10 GND • Military Temperature Range: -55oC to +125oC NC 6 9 Q1 • Significant Power Reduction Compared to LSTTL ICs NC 7 8 Q2 • DC Operating Voltage Range: 4.5V to 5.5V • LSTTL Input Compatibility - VIL = 0.8V Max - VIH = VCC/2 Min 14 LEAD CERAMIC METAL SEAL FLATPACK PACKAGE (FLATPACK) MIL-STD-1835 CDFP3-F14 TOP VIEW • Input Current Levels Ii ≤ 5µA at VOL, VOH 1 14 CP0 MR1 2 13 NC MR2 3 12 Q0 NC 4 11 Q3 VCC 5 10 GND NC 6 9 Q1 NC 7 8 Q2 CP1 Description The Intersil HCTS93MS is a Radiation Hardened 4-bit binary ripple counter consisting of four master-slave flip-flops internally connected to provide a divide-by-two and a divideby-eight section. Each section has a separate clock input. The HCTS93MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of radiation hardened, high-speed, CMOS/SOS Logic Family. Ordering Information PART NUMBER TEMPERATURE RANGE SCREENING LEVEL PACKAGE HCTS93DMSR -55oC to +125oC Intersil Class S Equivalent 14 Lead SBDIP HCTS93KMSR -55oC to +125oC Intersil Class S Equivalent 14 Lead Ceramic Flatpack +25oC Sample 14 Lead SBDIP HCTS93K/Sample +25oC Sample 14 Lead Ceramic Flatpack HCTS93HMSR +25oC Die Die DB NA HCTS93D/Sample CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999 480 Spec Number File Number 518622 3060.1 HCTS93MS Functional Diagram 14 12 CP0 MR1 MR2 Q0 ÷2 COUNTER 2 3 9 Q1 CP1 ÷8 COUNTER 1 8 11 Q2 Q3 VCC = 5 GND = 10 TRUTH TABLE 2 OUTPUTS 2 OUTPUTS COUNT Q0 Q1 Q2 Q3 MR1 MR2 Q0 Q1 Q2 Q3 0 L L L L H H L L L L 1 H L L L L H Count 2 L H L L H L Count 3 H H L L L L Count 4 L L H L 5 H L H L 6 L H H L 7 H H H L 8 L L L H 9 H L L H 10 L H L H 11 H H L H 12 L L H H 13 H L H H 14 L H H H 15 H H H H NOTE: H = HIGH Voltage Level, L = LOW Voltage Level, Q0 Connected to CP0 Spec Number 481 518622 Specifications HCTS93MS Absolute Maximum Ratings Reliability Information Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA DC Drain Current, Any One Output. . . . . . . . . . . . . . . . . . . . . . .±25mA (All Voltage Reference to the VSS Terminal) Storage Temperature Range (TSTG) . . . . . . . . . . . -65oC to +150oC Lead Temperature (Soldering 10sec) . . . . . . . . . . . . . . . . . . +265oC Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1 Thermal Resistance θJA θJC SBDIP Package. . . . . . . . . . . . . . . . . . . . 74oC/W 24oC/W Ceramic Flatpack Package . . . . . . . . . . . 116oC/W 30oC/W Maximum Package Power Dissipation at +125oC Ambient SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.68W Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.43W If device power exceeds package dissipation capability, provide heat sinking or derate linearly at the following rate: SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.5mW/oC Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . 8.6mW/oC CAUTION: As with all semiconductors, stress listed under “Absolute Maximum Ratings” may be applied to devices (one at a time) without resulting in permanent damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed under “Electrical Performance Characteristics” are the only conditions recommended for satisfactory device operation. Operating Conditions Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V Operating Temperature Range (TA) . . . . . . . . . . . . -55oC to +125oC Input Rise and Fall Times at VCC = 4.5V (TR, TF) . . . 100ns/V Max Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . . . . . . . 0.0V to 0.8V Input High Voltage (VIH) . . . . . . . . . . . . . . . . . . . . . . .VCC/2 to VCC TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETER Quiescent Current Output Current (Sink) Output Current (Source) Output Voltage Low Output Voltage High Input Leakage Current Noise Immunity Functional Test GROUP A SUBGROUPS TEMPERATURE MIN MAX UNITS 1 +25oC - 20 µA 2, 3 +125oC, -55oC - 400 µA 1 +25oC 4.8 - mA 2, 3 +125oC, -55oC 4.0 - mA 1 +25oC -4.8 - mA 2, 3 +125oC, -55oC -4.0 - mA VCC = 4.5V, VIH = 2.25V, IOL = 50µA, VIL = 0.8V 1, 2, 3 +25oC, +125oC, -55oC - 0.1 V VCC = 5.5V, VIH = 2.75V, IOL = 50µA, VIL = 0.8V 1, 2, 3 +25oC, +125oC, -55oC - 0.1 V VCC = 4.5V, VIH = 2.25V, IOH = -50µA, VIL = 0.8V 1, 2, 3 +25oC, +125oC, -55oC VCC -0.1 - V VCC = 5.5V, VIH = 2.75V, IOH = -50µA, VIL = 0.8V 1, 2, 3 +25oC, +125oC, -55oC VCC -0.1 - V VCC = 5.5V, VIN = VCC or GND 1 +25oC - ±0.5 µA 2, 3 +125oC, -55oC - ±5.0 µA 7, 8A, 8B +25oC, +125oC, -55oC - - - (NOTE 1) CONDITIONS SYMBOL ICC IOL IOH VOL VOH IIN FN VCC = 5.5V, VIN = VCC or GND VCC = 4.5V, VIH = 4.5V, VOUT = 0.4V, VIL = 0V VCC = 4.5V, VIH = 4.5V, VOUT = VCC - 0.4V, VIL = 0V VCC = 4.5V, VIH = 2.25V, VIL = 0.8V (Note 2) LIMITS NOTES: 1. All voltages referenced to device GND. 2. For functional tests, VO ≥ 4.0V is recognized as a logic “1”, and VO ≤ 0.5V is recognized as a logic “0”. Spec Number 482 518622 Specifications HCTS93MS TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETER CP0 to Q0 (NOTES 1, 2) CONDITIONS SYMBOL TPHL GROUP A SUBGROUPS TEMPERATURE MIN MAX UNITS 9 +25oC 2 32 ns 2 39 ns 2 27 ns 2 33 ns 2 32 ns 2 39 ns VCC = 4.5V 10, 11 TPLH VCC = 4.5V 9 10, 11 CP1 to Q1 TPHL VCC = 4.5V 9 10, 11 TPLH CP1 to Q2 TPHL VCC = 4.5V TPHL TPHL +25 C o o +125 C, -55 C o +25 C +125 oC, -55oC o +25 C 2 27 ns 2 33 ns 9 +25oC 2 39 ns 2 47 ns 2 32 ns 2 39 ns 2 42 ns 2 51 ns 2 36 ns 2 44 ns 2 33 ns 2 40 ns VCC = 4.5V VCC = 4.5V 9 VCC = 4.5V 9 VCC = 4.5V 9 10, 11 MRn to Qn o +125oC, -55oC 10, 11 TPLH -55oC 9 10, 11 CP1 to Q3 +125oC, 10, 11 10, 11 TPLH LIMITS VCC = 4.5V 9 10, 11 o o +125 C, -55 C +25 oC +125oC, -55oC +25oC o o +125 C, -55 C +25 oC +125oC, +25 -55oC oC +125oC, -55oC NOTES: 1. All voltages referenced to device GND. 2. AC measurements assume RL = 500Ω, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = 3V. TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER Capacitance Power Dissipation Input Capacitance Output Transition Time Max Clock Frequency Pulse Width CP0, CP1 Reset Pulse Width Reset Removal Time SYMBOL CPD CIN TTHL, TTLH FMAX TW TW TREM CONDITIONS NOTES VCC = 5.0V, f = 1MHz VCC = 5.0V, f = 1MHz VCC = 4.5V TEMPERATURE MIN MAX UNITS 1 +25o C - 39 pF 1 oC, -55oC - 99 pF 1 +25oC - 10 pF 1 +125oC - 10 pF 1 +25oC - 15 ns - 22 ns 1 +125 +125oC, -55oC VCC = 4.5V, VIH = 4.5V, VIL = 0.0V 1 +25oC 30 - MHz 1 +125oC 20 - MHz VCC = 4.5V, VIH = 4.5V, VIL = 0.0V 1 +25oC 16 - ns 1 +125oC 24 - ns 1 +25oC 16 - ns 1 +125oC 24 - ns 1 +25oC 10 - ns 1 +125oC 15 - ns VCC = 4.5V, VIH = 4.5V, VIL = 0.0V VCC = 4.5V, VIH = 4.5V, VIL = 0.0V NOTE: 1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics. Spec Number 483 518622 Specifications HCTS93MS TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS 200K RAD LIMITS PARAMETER (NOTES 1, 2) CONDITIONS SYMBOL TEMPERATURE MIN MAX UNITS Quiescent Current ICC VCC = 5.5V, VIN = VCC or GND +25oC - 0.4 mA Output Current (Sink) IOL VCC = 4.5V, VIN = VCC or GND, VOUT = 0.4V +25oC 4.0 - mA Output Current (Source) IOH VCC = 4.5V, VIN = VCC or GND, VOUT = VCC -0.4V +25oC -4.0 - mA Output Voltage Low VOL VCC = 4.5V or 5.5V, VIH = VCC/2, VIL = 0.8V, IOL = 50µA +25oC - 0.1 V Output Voltage High VOH VCC = 4.5V or 5.5V, VIH = VCC/2, VIL = 0.8V, IOH = -50µA +25oC VCC -0.1 - V Input Leakage Current IIN VCC = 5.5V, VIN = VCC or GND +25oC - ±5 µA Noise Immunity Functional Test FN VCC = 4.5V, VIH = 2.25V, VIL = 0.8V, (Note 3) +25oC - - V TPHL VCC = 4.5V +25oC 2 39 ns TPLH VCC = 4.5V +25oC 2 33 ns TPHL VCC = 4.5V +25oC 2 39 ns TPLH VCC = 4.5V +25oC 2 33 ns TPHL VCC = 4.5V +25oC 2 47 ns TPLH VCC = 4.5V +25oC 2 39 ns TPHL VCC = 4.5V +25oC 2 51 ns TPLH VCC = 4.5V +25oC 2 44 ns TPHL VCC = 4.5V +25oC 2 40 ns CP0 to Q0 CP1 to Q1 CP1 to Q2 CP1 to Q3 MRn to Qn NOTES: 1. All voltages referenced to device GND. 2. AC measurements assume RL = 500Ω, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = 3V. 3. For functional tests VO ≥ 4.0V is recognized as a logic “1”, and VO ≤ 0.5V is recognized as a logic “0”. TABLE 5. BURN-IN AND OPERATING LIFE TEST, DELTA PARAMETERS (+25oC) GROUP B SUBGROUP DELTA LIMIT ICC 5 6µA IOL/IOH 5 -15% of 0 Hour PARAMETER Spec Number 484 518622 Specifications HCTS93MS TABLE 6. APPLICABLE SUBGROUPS CONFORMANCE GROUPS METHOD GROUP A SUBGROUPS Initial Test (Preburn-In) 100%/5004 1, 7, 9 ICC, IOL/H Interim Test I (Postburn-In) 100%/5004 1, 7, 9 ICC, IOL/H Interim Test II (Postburn-In) 100%/5004 1, 7, 9 ICC, IOL/H PDA 100%/5004 1, 7, 9, Deltas Interim Test III (Postburn-In) 100%/5004 1, 7, 9 PDA 100%/5004 1, 7, 9, Deltas Final Test 100%/5004 2, 3, 8A, 8B, 10, 11 Sample/5005 1, 2, 3, 7, 8A, 8B, 9, 10, 11 Subgroup B-5 Sample/5005 1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas Subgroup B-6 Sample/5005 1, 7, 9 Sample/5005 1, 7, 9 Group A (Note 1) Group B Group D READ AND RECORD ICC, IOL/IOH Subgroups 1, 2, 3, 9, 10, 11 NOTE: 1. Alternate Group A testing in accordance with Method 5005 of Mil-Std-883 may be exercised. TABLE 7. TOTAL DOSE IRRADIATION TEST CONFORMANCE GROUPS Group E Subgroup 2 READ AND RECORD METHOD PRE RAD POST RAD PRE RAD POST RAD 5005 1, 7, 9 Table 4 1, 9 Table 4 (Note 1) NOTE: 1. Except FN Test Which will be performed 100% go/no-go TABLE 8. STATIC AND DYNAMIC BURN-IN TEST CONNECTIONS OSCILLATOR GROUND 1/2 VCC = 3V ± 0.5V VCC = 6V ± 0.5V 50kHz 25kHz 1, 2, 3, 10, 14 - 5 - - 10 - 1, 2, 3, 5, 14 - - 2, 3, 10 8, 9, 11, 12 5 14 1 OPEN STATIC I BURN-IN (Note 1) 4, 6, 7, 8, 9, 11, 12, 13 STATIC II BURN-IN (Note 1) 4, 6, 7, 8, 9, 11, 12, 13 DYNAMIC BURN-IN (Note 2) 4, 6, 7, 13 NOTES: 1. Each pin except VCC and GND will have a resistor of 10KΩ ± 5% for static burn-in 2. Each pin except VCC and GND will have a resistor of 1KΩ ± 5% for dynamic burn-in TABLE 9. IRRADIATION TEST CONNECTIONS OPEN GROUND VCC = 5V ± 0.5V 4, 6, 7, 8, 9, 11, 12, 13 10 1, 2, 3, 5, 14 NOTE: Each pin except VCC and GND will have a resistor of 47KΩ ± 5% for irradiation testing. Group E, Subgroup 2, sample size is 4 dice/wafer 0 failures. Spec Number 485 518622 HCTS93MS Intersil Space Level Product Flow - ‘MS’ Wafer Lot Acceptance (All Lots) Method 5007 (Includes SEM) 100% Interim Electrical Test 1 (T1) GAMMA Radiation Verification (Each Wafer) Method 1019, 4 Samples/Wafer, 0 Rejects 100% Static Burn-In 2, Condition A or B, 24 hrs. min., +125oC min., Method 1015 100% Nondestructive Bond Pull, Method 2023 100% Interim Electrical Test 2 (T2) Sample - Wire Bond Pull Monitor, Method 2011 100% Delta Calculation (T0-T2) Sample - Die Shear Monitor, Method 2019 or 2027 100% PDA 1, Method 5004 (Notes 1and 2) 100% Internal Visual Inspection, Method 2010, Condition A 100% Dynamic Burn-In, Condition D, 240 hrs., +125oC or Equivalent, Method 1015 100% Delta Calculation (T0-T1) 100% Temperature Cycle, Method 1010, Condition C, 10 Cycles 100% Interim Electrical Test 3 (T3) 100% Constant Acceleration, Method 2001, Condition per Method 5004 100% Delta Calculation (T0-T3) 100% PDA 2, Method 5004 (Note 2) 100% PIND, Method 2020, Condition A 100% Final Electrical Test 100% External Visual 100% Fine/Gross Leak, Method 1014 100% Serialization 100% Radiographic, Method 2012 (Note 3) 100% Initial Electrical Test (T0) 100% Static Burn-In 1, Condition A or B, 24 hrs. min., +125oC min., Method 1015 100% External Visual, Method 2009 Sample - Group A, Method 5005 (Note 4) 100% Data Package Generation (Note 5) NOTES: 1. Failures from Interim electrical test 1 and 2 are combined for determining PDA 1. 2. Failures from subgroup 1, 7, 9 and deltas are used for calculating PDA. The maximum allowable PDA = 5% with no more than 3% of the failures from subgroup 7. 3. Radiographic (X-Ray) inspection may be performed at any point after serialization as allowed by Method 5004. 4. Alternate Group A testing may be performed as allowed by MIL-STD-883, Method 5005. 5. Data Package Contents: • Cover Sheet (Intersil Name and/or Logo, P.O. Number, Customer Part Number, Lot Date Code, Intersil Part Number, Lot Number, Quantity). • Wafer Lot Acceptance Report (Method 5007). Includes reproductions of SEM photos with percent of step coverage. • GAMMA Radiation Report. Contains Cover page, disposition, Rad Dose, Lot Number, Test Package used, Specification Numbers, Test equipment, etc. Radiation Read and Record data on file at Intersil. • X-Ray report and film. Includes penetrometer measurements. • Screening, Electrical, and Group A attributes (Screening attributes begin after package seal). • Lot Serial Number Sheet (Good units serial number and lot number). • Variables Data (All Delta operations). Data is identified by serial number. Data header includes lot number and date of test. • The Certificate of Conformance is a part of the shipping invoice and is not part of the Data Book. The Certificate of Conformance is signed by an authorized Quality Representative. All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (321) 724-7000 FAX: (321) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. Taiwan Limited 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029 Spec Number 486 518622 HCTS93MS AC Timing Diagrams AC Load Circuit VIH DUT TEST POINT INPUT VS VIL CL RL TPLH TPHL VOH VS OUTPUT CL = 50pF VOL RL = 500Ω TTLH VOH TTHL 80% 20% VOL 80% OUTPUT 20% AC VOLTAGE LEVELS PARAMETER HCTS UNITS VCC 4.50 V VIH 3.00 V VS 1.30 V VIL 0 V GND 0 V Pulse Width, Removal Timing Diagram Negative Edge Trigger Pulse Width, Removal Load Circuit DUT TW INPUT CP VIH VS TEST POINT CL VIL RL TREM INPUT MR VIH TW CL = 50pF RL = 500Ω VS VIL TREM = Removal Time TW = Pulse Width AC VOLTAGE LEVELS PARAMETER HCTS UNITS VCC 4.5 V VIH 3.0 V VS 1.3 V VIL 0 V GND 0 V Spec Number 487 518622 HCTS93MS Die Characteristics DIE DIMENSIONS: 89 x 88 mils 2.25mm x 2.24mm METALLIZATION: Type: AlSi Metal Thickness: 11kÅ ± 1kÅ GLASSIVATION: Type: SiO2 Thickness: 13kÅ ± 2.6kÅ WORST CASE CURRENT DENSITY: <2.0 x 105A/cm2 BOND PAD SIZE: 100µm x 100µm 4 mils x 4 mils Metallization Mask Layout HCTS93MS MR1 (2) CP1 (1) CP0 (14) (13) NC MR2 (3) (12) Q0 NC (4) (11) Q3 (10) GND (9) Q1 VCC (5) (6) NC (7) NC (8) Q2 NOTE: The die diagram is a generic plot from a similar HCS device. It is intended to indicate approximate die size and bond pad location. The mask series for the HCTS93 is TA14454A. Spec Number 488 518622