MCP1711 150 mA Ultra-Low Quiescent Current, Capacitorless LDO Regulator Features General Description • Low Quiescent Current: 600 nA • Input Voltage Range: 1.4V to 6.0V • Standard Output Voltages: 1.2V, 1.8V, 1.9V, 2.2V, 2.5V, 3.0V, 3.3V, 5.0V • Output Accuracy: ±20 mV for 1.2V and 1.8V Options and ±1% for VR > 2.0V • Temperature Stability: ±50 ppm/°C • Maximum Output Current: 150 mA • Low ON Resistance: 3.3 @ VR = 3.0V • Standby Current: 10 nA • Protection Circuits: Current Limiter, Short Circuit, Foldback • SHDN Pin Function: ON/OFF Logic = Enable High • COUT Discharge Circuit when SHDN Function is Active • Output Capacitor: Low Equivalent Series Resistance (ESR) Ceramic, Capacitorless Compatible • Operating Temperature: -40°C to +85°C (Industrial) • Available Packages: - 4-Lead 1 x 1 mm UQFN - 5-Lead SOT-23 • Environmentally Friendly: EU RoHS Compliant, Lead-Free The MCP1711 is a highly accurate CMOS low dropout (LDO) voltage regulator that can deliver up to 150 mA of current while consuming only 0.6 µA of quiescent current (typical). The input operating range is specified from 1.4V to 6.0V, making it an ideal choice for mobile applications and one-cell Li-Ion powered applications. Applications • • • • • • • Energy Harvesting Long-Life, Battery-Powered Applications Portable Electronics Ultra-Low Consumption “Green” Products Mobile Devices/Terminals Wireless LAN Modules (Wireless, Cameras) Related Literature • AN765, Using Microchip’s Micropower LDOs (DS00765), Microchip Technology Inc. • AN766, Pin-Compatible CMOS Upgrades to Bipolar LDOs (DS00766), Microchip Technology Inc. • AN792, A Method to Determine How Much Power a SOT23 Can Dissipate in an Application (DS00792), Microchip Technology Inc. 2015-2016 Microchip Technology Inc. The MCP1711 is capable of delivering 150 mA output current with only 0.32V (typical) for VR = 5.0V, and 1.41V (typical) for VR = 1.2V of input-to-output voltages differential. The output voltage accuracy of the MCP1711 is typically ± 0.02V for VR < 2.0V and ±1% for VR > 2.0V at +25°C. The temperature stability is approximately ±50 ppm/°C. Line regulation is ±0.01%/V typical at +25°C. The output voltages available for the MCP1711 range from 1.2V to 5.0V. The LDO output is stable even if an output capacitor is not connected, due to an excellent internal phase compensation. However, for better transient responses, the output capacitor should be added. The MCP1711 is compatible with low ESR ceramic output capacitors. Overcurrent limit and short-circuit protection embedded into the device provide a robust solution for any application. The MCP1711 has a true current foldback feature. When the load decreases beyond the MCP1711 load rating, the output current and output voltage will foldback toward 80 mA (typical) at approximately 0V output. When the load impedance increases and returns to the rated load, the MCP1711 will follow the same foldback curve as the device comes out of current foldback. If the device is in Shutdown mode, by inputting a low-level signal to the SHDN pin, the current consumption is reduced to less than 0.1 µA (typically 0.01 µA). In Shutdown mode, if the output capacitor is used, it will be discharged via the internal dedicated switch and, as a result, the output voltage quickly returns to 0V. The package options for the MCP1711 are the 4-lead 1 x 1 mm UQFN and the 5-lead SOT-23, which make the device ideal for small and compact applications. DS20005415C-page 1 MCP1711 Package Types Typical Application Circuit MCP1711 1x1 UQFN* Top View VIN 4 MCP1711 SOT-23 Top View VOUT 5 SHDN 3 NC 4 MCP1711 VIN VIN CIN EP 5 1 VOUT MCP1711 1x1 UQFN and SOT-23 COUT 0.1 µF Ceramic 2 1 3 VIN GND SHDN 2 GND VOUT VOUT OFF ON SHDN GND * Includes Exposed Thermal Pad (EP); see Table 3-1 Functional Block Diagram PMOS VIN VOUT Current Limit Ref – R1 Err Amp + DT SHDN DS20005415C-page 2 ON/OFF Control SHDN to each block R2 RDCHG Discharge transistor (DT) 2015-2016 Microchip Technology Inc. MCP1711 1.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings † Input Voltage, VIN .....................................................................................................................................................+6.5V VIN, SHDN.................................................................................................................................................. -0.3V to +6.5V Output Current, IOUT (1) .........................................................................................................................................470 mA Output Voltage, VOUT (2)....................................................................................................... -0.3V to VIN + 0.3V or +6.5V Power Dissipation 5-Lead SOT-23 ..................................................... 600 mW (JEDEC 51-7 FR-4 board with thermal vias) or 250 mW (3) 4-Lead 1 x 1 mm UQFN ........................................ 550 mW (JEDEC 51-7 FR-4 board with thermal vias) or 100 mW (3) Storage Temperature .............................................................................................................................. -55°C to +125°C Operating Ambient Temperature ............................................................................................................... -40°C to +85°C ESD Protection on all pins ...........................................................................................................±1 kV HBM, ±200V MM † Notice: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended periods may affect device reliability. Note 1: Provided that the device is used in the range of IOUT PD/(VIN - VOUT). 2: The maximum rating corresponds to the lowest value between VIN + 0.3V or +6.5V. 3: The device is mounted on one layer PCB with minimal copper that does not provide any additional cooling. DC CHARACTERISTICS Electrical Characteristics: Unless otherwise indicated, VSHDN = VIN, IOUT = 1 mA, CIN = COUT = 0 µF, VIN = 3.5V for VR < 2.5V and VIN = VR + 1V for VR 2.5V, TA = +25°C Parameters Sym. Min. Typ. Max. Units Conditions VIN 1.4 — 6.0 V IOUT = 1 µA VOUT VR - 0.02 VR VR + 0.02 V VR < 2.0V VR x 0.99 VR VR x 1.01 IOUT 150 — — mA VOUT -16 ±3 +16 mV -50 ±17 +50 Input-Output Characteristics Input Voltage Output Voltage Maximum Output Current Load Regulation Dropout Voltage (1) Input Quiescent Current Input Quiescent Current for SHDN mode Line Regulation Note 1: 2: VDROPOUT1 — VDROP1 (2) VDROP2 (2) VR 2.0V 1 µA IOUT 1 mA 1 mA IOUT 150 mA V IOUT = 50 mA VDROPOUT2 — Iq — 0.60 1.27 — 0.65 1.50 1.9V VR < 4.0V — 0.80 1.80 VR 4.0V ISHDN — 0.01 0.10 µA VOUT/ (VIN x VOUT) -0.13 ±0.01 +0.13 %/V -0.19 ±0.01 +0.19 IOUT = 150 mA µA VR < 1.9V VIN = 6.0V VSHDN = VIN IOUT = 1 µA VR + 0.5V VIN 6.0V IOUT = 1 mA VR 1.2V,VR + 0.5V VIN 6.0V The dropout voltage is defined as the input to output differential at which the output voltage drops 2% below the output voltage value that was measured with an applied input voltage of VIN = VR + 1V. VDROP1, VDROP2: Dropout Voltage (Refer to the DC Characteristics Voltage Table). 2015-2016 Microchip Technology Inc. DS20005415C-page 3 MCP1711 DC CHARACTERISTICS (CONTINUED) Electrical Characteristics: Unless otherwise indicated, VSHDN = VIN, IOUT = 1 mA, CIN = COUT = 0 µF, VIN = 3.5V for VR < 2.5V and VIN = VR + 1V for VR 2.5V, TA = +25°C Parameters Sym. Min. Typ. Max. VOUT/ (T x VOUT) — ±50 — ILIMIT 150 270 — mA VOUT = 0.95 x VR Output Short-Circuit Foldback Current IOUT_SC — 80 — mA VOUT = GND COUT Auto-Discharge Resistance RDCHG 280 450 640 SHDN = GND VOUT = VR en — 30 — SHDN Logic High Input Voltage VSHDN-HIGH 0.91 — 6.00 V SHDN Logic Low Input Voltage VSHDN-LOW 0 — 0.38 V SHDN High-Level Current ISHDN-HIGH -0.1 — +0.1 µA VIN = 6.0V SHDN Low-Level Current ISHDN-LOW -0.1 — +0.1 µA VIN = 6.0V SHDN = GND Output Voltage Temperature Stability Current Limit Noise Units Conditions ppm/°C IOUT = 10 mA -40°C TA +85°C µV(rms) CIN = COUT = 1 µF, IOUT = 50 mA, f = 10 Hz to 100 kHz Shutdown Input Note 1: 2: The dropout voltage is defined as the input to output differential at which the output voltage drops 2% below the output voltage value that was measured with an applied input voltage of VIN = VR + 1V. VDROP1, VDROP2: Dropout Voltage (Refer to the DC Characteristics Voltage Table). DC CHARACTERISTICS VOLTAGE TABLE Nominal Output Voltage Output Voltage (V) VOUT Dropout Voltage (V) VDROP1 VDROP1 VDROP2 VDROP2 VR (V) Min. Max. Typ. Max. Typ. Max. 1.2 1.1800 1.2200 0.87 1.23 1.41 1.93 1.8 1.7800 1.8200 0.47 0.72 0.99 1.40 2.2 2.1780 2.2220 0.31 0.47 0.75 1.05 2.5 2.4750 2.5250 0.26 0.40 0.67 0.92 3.0 2.9700 3.0300 0.17 0.26 0.50 0.67 3.3 3.2670 3.3330 0.17 0.26 0.50 0.67 5.0 4.9500 5.0500 0.10 0.16 0.32 0.43 DS20005415C-page 4 2015-2016 Microchip Technology Inc. MCP1711 TEMPERATURE SPECIFICATIONS (Note 1) Parameters Sym. Min. Typ. Max. Units Conditions TA -40 — +85 °C Junction Operating Temperature TJ -40 — +125 °C Storage Temperature Range TA -55 — +125 °C JA — 181.82 — °C/W JEDEC 51-7 FR4 board with thermal vias JA — 1000 — °C/W Note 2 JC — 15 — °C/W JA — 166.67 — °C/W JEDEC 51-7 FR4 board with thermal vias JA — 400 — °C/W Note 2 JC — 81 — °C/W Temperature Ranges Operating Ambient Temperature Range Package Thermal Resistances Thermal Resistance, 1 x 1 UQFN-4Ld Thermal Resistance, SOT-23-5Ld Note 1: 2: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature, and the thermal resistance from junction to air (i.e., TA, TJ, JA). Exceeding the maximum allowable power dissipation will cause the device operating junction temperature to exceed the maximum +125°C rating. Sustained junction temperatures above +125°C can impact the device reliability. The device is mounted on one layer PCB with minimal copper that does not provide any additional cooling. 2015-2016 Microchip Technology Inc. DS20005415C-page 5 MCP1711 2.0 TYPICAL PERFORMANCE CURVES Note: The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. NOTE: Unless otherwise indicated, VIN = 3.5V for VR < 2.5V or VIN = VR + 1V for VR 2.5V, IOUT = 1 mA, CIN = COUT = 0 µF, VSHDN = VIN, TA = +25°C. 1.20 1.20 VR = 5.0V Quiescent Current (µA) Quiescent Current (µA) VR = 1.2V 1.00 0.80 TA = +85°C TA = +25°C 0.60 0.40 TA = -40°C 0.20 0.00 1.00 TA = +85°C TA = +25°C 0.80 0.60 0.40 TA = -40°C 0.20 0.00 0 1 2 3 4 5 6 0 1 Input Voltage (V) FIGURE 2-1: Voltage. FIGURE 2-4: Voltage. 1.2 45 1 0.8 TA = +85°C 0.6 0.4 TA = -40°C 1 2 3 4 5 35 30 25 20 15 10 0 6 Quiescent Current vs. Input 0 30 45 VR = 3.3V TA = +85°C 0.60 TA = +25°C TA = -40°C 0.20 60 90 Load Current (mA) 120 150 Ground Current vs. Load VR = 1.8V 40 0.80 0.40 FIGURE 2-5: Current. Ground Current (µA) Quiescent Current (µA) 1.20 1.00 6 Quiescent Current vs. Input Input Voltage (V) FIGURE 2-2: Voltage. 5 5 0 0 4 VR = 1.2V 40 Ground Current (µA) Quiescent Current (µA) VR = 1.8V TA = +25°C 3 Input Voltage (V) Quiescent Current vs. Input 0.2 2 35 30 25 20 15 10 5 0.00 0 1 2 3 4 5 6 0 0 Input Voltage (V) FIGURE 2-3: Voltage. DS20005415C-page 6 Quiescent Current vs. Input FIGURE 2-6: Current. 30 60 90 Load Current (mA) 120 150 Ground Current vs. Load 2015-2016 Microchip Technology Inc. MCP1711 Note: Unless otherwise indicated, VIN = 3.5V for VR < 2.5V or VIN = VR + 1V for VR 2.5V, IOUT = 1 mA, CIN = COUT = 0 µF, VSHDN = VIN, TA = +25°C. . 40 VR = 3.3V Ground Current (µA) 35 3.5V 30 25 VIN 0V tr = 5 µs 20 VOUT (DC Coupled, 1V/Div) 15 IOUT = 1 µA 10 5 VOUT IOUT = 10 mA 0 0 30 60 90 Load Current (mA) FIGURE 2-7: Current. 120 VR = 1.8V Time = 80 µs/Div 150 Ground Current vs. Load IOUT = 150 mA FIGURE 2-10: Start-Up from VIN. 45 VR = 5.0V Ground Current (µA) 40 4.3V 35 30 VIN 25 0V tr = 5 µs VOUT (DC Coupled, 1V/Div) IOUT = 1 µA 20 15 10 5 IOUT = 10 mA VOUT 0 0 30 60 90 120 IOUT = 150 mA VR = 3.3V Time = 80 µs/Div 150 Load Current (mA) FIGURE 2-8: Current. Ground Current vs. Load Start-Up from VIN. FIGURE 2-11: 3.5V VIN 0V tr = 5 µs 6.0 V VIN IOUT = 1 µA IOUT = 10 mA VOUT VOUT (DC Coupled, 0.5V/Div) IOUT = 150 mA Time = 80 µs/Div FIGURE 2-9: Start-Up from VIN. 2015-2016 Microchip Technology Inc. 0V tr = 5 µs VOUT VR = 1.2V VOUT (DC Coupled, 2V/Div) IOUT = 1 µA IOUT = 10 mA IOUT = 150 mA VR = 5.0V Time = 80 µs/Div FIGURE 2-12: Start-Up from VIN. DS20005415C-page 7 MCP1711 Note: Unless otherwise indicated, VIN = 3.5V for VR < 2.5V or VIN = VR + 1V for VR 2.5V, IOUT = 1 mA, CIN = COUT = 0 µF, VSHDN = VIN, TA = +25°C. 6.0 V 3.5V VIN 0V VIN tr = 5 µs VOUT (DC Coupled, 0.5V/Div) IOUT = 10 mA IOUT = 100 mA VOUT Time = 80 µs/Div VR = 1.2V CIN = COUT = 1 µF Start-Up from VIN. IOUT IOUT = 150 mA 0V FIGURE 2-16: Start-Up from VIN. 3.5V tr = 5 µs EN 0V tr = 5 µs VOUT (DC Coupled, 1V/Div) VOUT (DC Coupled, 0.5V/Div) IOUT = 1 µA IOUT = 10 mA IOUT = 100 mA VOUT IOUT = 150 mA Time = 80 µs/Div FIGURE 2-14: VR = 1.8V CIN = COUT = 1 µF Start-Up from VIN. IOUT = 150 mA VOUT IOUT = 10 mA 0V FIGURE 2-17: IOUT = 10 mA VOUT (DC Coupled, 1V/Div) SHDN 0V tr = 5 µs VOUT (DC Coupled, 1V/Div) IOUT = 100 mA IOUT = 1 µA IOUT = 150 mA Time = 80 µs/Div FIGURE 2-15: DS20005415C-page 8 Start-Up from SHDN. 3.5V tr = 5 µs VOUT VR = 1.2V Time = 80 µs/Div 4.3V VIN VR = 5.0V CIN = COUT = 1 µF Time = 80 µs/Div 3.5V VIN VOUT (DC Coupled, 2V/Div) IOUT = 10 mA IOUT = 100 mA IOUT = 150 mA FIGURE 2-13: 0V tr = 5 µs VR = 3.3V CIN = COUT = 1 µF Start-Up from VIN. VOUT Time = 80 µs/Div FIGURE 2-18: IOUT = 10 mA IOUT = 150 mA VR = 1.8V Start-Up from SHDN. 2015-2016 Microchip Technology Inc. MCP1711 Note: Unless otherwise indicated, VIN = 3.5V for VR < 2.5V or VIN = VR + 1V for VR 2.5V, IOUT = 1 mA, CIN = COUT = 0 µF, VSHDN = VIN, TA = +25°C. SHDN 0V tr = 5 µs VOUT (DC Coupled, 1V/Div) IOUT = 1 µA IOUT = 150 mA IOUT = 10 mA VOUT Output Voltage (V) 4.3V VR = 3.3V Time = 80 µs/Div 2.00 1.80 1.60 1.40 1.20 1.00 0.80 0.60 0.40 0.20 0.00 VR = 1.8V VIN = 2.5V VIN = 6.0V VIN = 4.5V VIN = 3.5V 0 50 100 150 200 250 300 Output Current (mA) FIGURE 2-19: Start-Up from SHDN. FIGURE 2-22: Current. Output Voltage vs. Output 3.50 VR = 3.3V 6.0 V tr = 5 µs SHDN 0V VOUT (DC Coupled, 2V/Div) IOUT = 1 µA Output Voltage (V) 3.00 VIN = 5.0V VIN = 3.6V 2.00 VIN = 4.3V VIN = 6.0V 1.50 1.00 0.50 IOUT = 150 mA VOUT 2.50 IOUT = 10 mA 0.00 VR = 5.0V Time = 80 µs/Div 0 50 100 150 200 250 300 350 Output Current (mA) FIGURE 2-20: 1.40 VR = 1.2V 1.20 VIN = 3.5V VIN = 2.5V 1.00 Output Voltage (V) Output Voltage (V) FIGURE 2-23: Current. Start-Up from SHDN. VIN = 4.5V 0.80 VIN = 6.0V 0.60 0.40 0.20 0.00 0 50 100 150 200 250 5.50 5.00 4.50 4.00 3.50 3.00 2.50 2.00 1.50 1.00 0.50 0.00 VR = 5.0V VIN = 5.5V VIN = 6.0V VIN = 5.2V 0 50 Output Current (mA) FIGURE 2-21: Current. Output Voltage vs. Output 2015-2016 Microchip Technology Inc. Output Voltage vs. Output 100 150 200 250 300 350 400 Output Current (mA) FIGURE 2-24: Current. Output Voltage vs. Output DS20005415C-page 9 MCP1711 Note: Unless otherwise indicated, VIN = 3.5V for VR < 2.5V or VIN = VR + 1V for VR 2.5V, IOUT = 1 mA, CIN = COUT = 0 µF, VSHDN = VIN, TA = +25°C. 1.40 VR = 1.2V 1.00 Output Voltage (V) Output Voltage (V) 1.20 TA = +85°C 0.80 TA = +25°C 0.60 TA = -40°C 0.40 0.20 0.00 0 50 100 150 200 5.50 5.00 4.50 4.00 3.50 3.00 2.50 2.00 1.50 1.00 0.50 0.00 VR = 5.0V TA = +85°C TA = -40°C TA = +25°C 0 250 50 Output Current (mA) Output Voltage vs. Output 2.00 1.80 1.60 1.40 1.20 1.00 0.80 0.60 0.40 0.20 0.00 FIGURE 2-28: Current. 200 250 300 350 Output Voltage vs. Output 1.40 VR = 1.8V VR = 1.2V 1.20 TA = +85°C TA = +25°C 1.00 IOUT = 1 µA 0.80 IOUT = 1 mA 0.60 IOUT = 10 mA 0.40 IOUT = 100 mA 0.20 TA = -40°C 0.00 0 50 100 150 200 250 300 0 1 Output Current (mA) FIGURE 2-26: Current. Output Voltage vs. Output FIGURE 2-29: Voltage. Output Voltage (V) VR = 3.3V 3.00 2.50 2.00 TA = +85°C 1.50 TA = -40°C TA = +25°C 1.00 0.50 0.00 0 50 100 150 200 250 300 350 2.00 1.80 1.60 1.40 1.20 1.00 0.80 0.60 0.40 0.20 0.00 DS20005415C-page 10 3 4 5 6 Output Voltage vs. Output Output Voltage vs. Input VR = 1.8V IOUT = 100 mA IOUT = 10 mA IOUT = 1 mA IOUT = 1 µA 0 1 Output Current (mA) FIGURE 2-27: Current. 2 Input Voltage (V) 3.50 Output Voltage (V) 150 Output Current (mA) Output Voltage (V) Output Voltage (V) FIGURE 2-25: Current. 100 2 3 4 5 6 Input Voltage (V) FIGURE 2-30: Voltage. Output Voltage vs. Input 2015-2016 Microchip Technology Inc. MCP1711 Note: Unless otherwise indicated, VIN = 3.5V for VR < 2.5V or VIN = VR + 1V for VR 2.5V, IOUT = 1 mA, CIN = COUT = 0 µF, VSHDN = VIN, TA = +25°C. 3.50 VR = 3.3V Output Voltage (V) Output Voltage (V) 3.00 IOUT = 100 mA 2.50 2.00 IOUT = 10 mA 1.50 1.00 IOUT = 1 mA 0.50 IOUT = 1 µA 0.00 0 1 2 3 4 Input Voltage (V) 5.50 5.00 4.50 4.00 3.50 3.00 2.50 2.00 1.50 1.00 0.50 0.00 VR = 1.8V IOUT = 1 µA -15 3.60 IOUT = 100 mA IOUT = 10 mA IOUT = 1 mA 4 5 3.45 3.40 IOUT = 1 mA 3.35 3.30 -15 10 35 60 Ambient Temperature (°C) 5.20 IOUT = 10 mA IOUT = 1 mA IOUT = 1 µA 85 Output Voltage vs. Ambient VR = 5.0V 5.15 Output Voltage (V) Output Voltage (V) FIGURE 2-35: Temperature. VR = 1.2V IOUT = 100 mA IOUT = 10 mA -40 6 Output Voltage vs. Input IOUT = 100 mA Output Voltage vs. Ambient IOUT = 1 µA Input Voltage (V) 1.25 1.24 1.23 1.22 1.21 1.20 1.19 1.18 1.17 1.16 1.15 85 3.50 3.20 FIGURE 2-32: Voltage. 60 3.25 IOUT = 1 µA 3 35 VR = 3.3V 3.55 2 10 FIGURE 2-34: Temperature. Output Voltage vs. Input 1 IOUT = 10 mA Ambient Temperature (°C) 5.0V VVRR == 5.0V 0 IOUT = 100 mA IOUT = 1 mA -40 6 Output Voltage (V) Output Voltage (V) FIGURE 2-31: Voltage. 5 1.85 1.84 1.83 1.82 1.81 1.80 1.79 1.78 1.77 1.76 1.75 IOUT = 1 µA 5.10 IOUT = 1 mA 5.05 5.00 4.95 IOUT = 10 mA 4.90 IOUT = 100 mA 4.85 4.80 -40 -15 10 35 60 85 -40 Output Voltage vs. Ambient 2015-2016 Microchip Technology Inc. 10 35 60 85 Ambient Temperature (°C) Ambient Temperature (°C) FIGURE 2-33: Temperature. -15 FIGURE 2-36: Temperature. Output Voltage vs. Ambient DS20005415C-page 11 MCP1711 Note: Unless otherwise indicated, VIN = 3.5V for VR < 2.5V or VIN = VR + 1V for VR 2.5V, IOUT = 1 mA, CIN = COUT = 0 µF, VSHDN = VIN, TA = +25°C. 450 VR = 1.2V 1600 1400 TA = +25°C 1200 1000 800 600 VR = 5.0V 400 TA = +85°C Dropout Voltage (mV) Dropout Voltage (mV) 1800 TA = -40°C 400 TA = +85°C 350 300 250 200 TA = +25°C 150 100 200 TA = -40°C 50 0 0 0 25 50 75 100 125 150 0 25 50 Output Current (mA) Dropout Voltage vs. Output Dropout Voltage (mV) 1400 VR = 1.8V 1200 TA = +85°C 1000 800 TA = +25°C 600 400 200 TA = -40°C FIGURE 2-40: Current. 0 25 FIGURE 2-38: Current. Dropout Voltage (mV) 150 Dropout Voltage vs. Output VR = 1.2V to 5.0V SHDN High Level 0.80 0.60 SHDN Low Level 0.40 0.20 50 75 100 125 150 -40 -15 Dropout Voltage vs. Output VR = 3.3V TA = +85°C TA = +25°C 75 100 60 85 4.5V TA = -40°C 50 35 FIGURE 2-41: Shutdown Threshold Voltage vs. Ambient Temperature. VIN 25 10 Ambient Temperature (°C) Output Current (mA) 0 125 0.00 0 500 450 400 350 300 250 200 150 100 50 0 100 1.00 SHDN Threshold Voltage (V) FIGURE 2-37: Current. 75 Load Current (mA) 3.5V tf = 5 µs tr = 5 µs VOUT (AC Coupled, 500 mV/Div) VOUT 125 150 VR = 1.2V VIN = 3.5V to 4.5V IOUT = 10 mA Time = 80 µs/Div Load Current (mA) FIGURE 2-39: Current. DS20005415C-page 12 Dropout Voltage vs. Output FIGURE 2-42: Dynamic Line Response. 2015-2016 Microchip Technology Inc. MCP1711 Note: Unless otherwise indicated, VIN = 3.5V for VR < 2.5V or VIN = VR + 1V for VR 2.5V, IOUT = 1 mA, CIN = COUT = 0 µF, VSHDN = VIN, TA = +25°C. 4.5V VIN 3.5V 5.3V VIN tf = 5 µs tr = 5 µs 4.3V tr = 5 µs tf = 5 µs VOUT (AC Coupled, 500 mV/Div) VOUT (AC Coupled, 500 mV/Div) VOUT VOUT VR = 1.2V VIN = 3.5V to 4.5V IOUT = 100 mA VR = 3.3V VIN = 4.3V to 5.3V IOUT = 10 mA FIGURE 2-43: Time = 80 µs/Div Dynamic Line Response. FIGURE 2-46: 3.5V Dynamic Line Response. 5.3V 4.5V VIN Time = 80 µs/Div tf = 5 µs tr = 5 µs VIN 4.3V tr = 5 µs tf = 5 µs VOUT (AC Coupled, 500 mV/Div) VOUT (AC Coupled, 500 mV/Div) VOUT VOUT VR = 1.8V VIN = 3.5V to 4.5V IOUT = 10 mA VR = 3.3V VIN = 4.3V to 5.3V IOUT = 100 mA FIGURE 2-44: Time = 80 µs/Div Dynamic Line Response. FIGURE 2-47: 3.5V Dynamic Line Response. 6.0V 4.5V VIN Time = 80 µs/Div VIN tf = 5 µs tr = 5 µs 5.2V tr = 5 µs tf = 5 µs VOUT (AC Coupled, 500 mV/Div) VOUT (AC Coupled, 500 mV/Div) VOUT VOUT VR = 1.8V VIN = 3.5V to 4.5V IOUT = 100 mA VR = 5.0V VIN = 5.2V to 6.0V IOUT = 10 mA FIGURE 2-45: Time = 80 µs/Div Dynamic Line Response. 2015-2016 Microchip Technology Inc. FIGURE 2-48: Time = 80 µs/Div Dynamic Line Response. DS20005415C-page 13 MCP1711 Note: Unless otherwise indicated, VIN = 3.5V for VR < 2.5V or VIN = VR + 1V for VR 2.5V, IOUT = 1 mA, CIN = COUT = 0 µF, VSHDN = VIN, TA = +25°C. VIN 5.5V 150 mA 6.0V tr = 5 µs IOUT tf = 5 µs tr1 VOUT (AC Coupled, 500 mV/Div) VOUT (AC Coupled, 1V/Div) VOUT VOUT VR = 5.0V VIN = 5.5V to 6.0V IOUT = 100 mA Time = 80 µs/Div FIGURE 2-49: Dynamic Line Response. 1 tr set time = 5 µs FIGURE 2-52: tr1 tf = 5 µs VOUT (AC Coupled, 1V/Div) VOUT Time = 200 µs/Div VR = 1.2V VIN = 3.5V IOUT = 1 µA to 150 mA VOUT VR = 1.2V VIN = 3.5V IOUT = 1 mA to 150 mA Time = 200 µs/Div tr set time = 5 µs 1 FIGURE 2-50: Dynamic Load Response. 150 mA 1 IOUTtr CIN = COUT = 1 µF tf = 5 µs IOUT VOUT (AC Coupled, 1V/Div) tf = 5 µs tr set time = 5 µs FIGURE 2-53: CIN = COUT = 1 µF 1 µA VOUT (AC Coupled, 1V/Div) VR = 1.2V VIN = 3.5V IOUT = 1 µA to 150 mA DS20005415C-page 14 tf = 5 µs VOUT Time = 200 µs/Div 1 tr set time = 5 µs FIGURE 2-51: tr1 VOUT (AC Coupled, 1V/Div) VOUT Time = 200 µs/Div Dynamic Load Response. 150 mA IOUT 1 µA 1 Dynamic Load Response. 150 mA tr1 1 µA 1 VR = 1.2V VIN = 3.5V IOUT = 1 mA to 150 mA Time = 200 µs/Div 150 mA IOUT tf = 5 µs 1 mA Dynamic Load Response. VR = 1.8V VIN = 3.5V IOUT = 1 µA to 150 mA tr set time = 5 µs FIGURE 2-54: Dynamic Load Response. 2015-2016 Microchip Technology Inc. MCP1711 Note: Unless otherwise indicated, VIN = 3.5V for VR < 2.5V or VIN = VR + 1V for VR 2.5V, IOUT = 1 mA, CIN = COUT = 0 µF, VSHDN = VIN, TA = +25°C. 150 mA tr1 CIN = COUT = 1 µF tf = 5 µs IOUT 150 mA tf = 5 µs IOUT tr1 1 µA VOUT (AC Coupled, 1V/Div) 1 µA VOUT (AC Coupled, 1V/Div) VOUT VOUT Time = 200 µs/Div 1 VR = 1.8V VIN = 3.5V IOUT = 1 µA to 150 mA 1 tr set time = 5 µs FIGURE 2-55: Dynamic Load Response. Time = 200 µs/Div tr set time = 5 µs FIGURE 2-58: 150 mA IOUT 1 mA tr1 tf = 5 µs CIN = COUT = 1 µF tf = 5 µs IOUT 1 µA VOUT (AC Coupled, 1V/Div) VOUT (AC Coupled, 1V/Div) VOUT VOUT Time = 200 µs/Div 1 Dynamic Load Response. 150 mA tr1 VR = 3.3V VIN = 4.3V IOUT = 1 µA to 150 mA VR = 1.8V VIN = 3.5V IOUT = 1 mA to 150 mA tr set time = 5 µs FIGURE 2-56: 1 Dynamic Load Response. 150 mA tr1 IOUT CIN = COUT = 1 µF Time = 200 µs/Div tr set time = 5 µs FIGURE 2-59: Dynamic Load Response. 150 mA IOUT tf = 5 µs VR = 3.3V VIN = 4.3V IOUT = 1 µA to 150 mA tr1 tf = 5 µs 1 mA 1 mA VOUT (AC Coupled, 1V/Div) VOUT VOUT Time = 200 µs/Div 1 VR = 1.8V VIN = 3.5V IOUT = 1 mA to 150 mA tr set time = 5 µs FIGURE 2-57: Dynamic Load Response. 2015-2016 Microchip Technology Inc. Time = 200 µs/Div 1 VR = 3.3V VIN = 4.3V IOUT = 1 mA to 150 mA tr set time = 5 µs FIGURE 2-60: Dynamic Load Response. DS20005415C-page 15 MCP1711 Note: Unless otherwise indicated, VIN = 3.5V for VR < 2.5V or VIN = VR + 1V for VR 2.5V, IOUT = 1 mA, CIN = COUT = 0 µF, VSHDN = VIN, TA = +25°C. 150 mA tr1 IOUT tf = 5 µs IOUT 150 mA CIN = COUT = 1 µF 1 mA 1 mA tr1 tf = 5 µs VOUT (AC Coupled, 1V/Div) VOUT (AC Coupled, 1V/Div) VOUT VOUT Time = 200 µs/Div 1 tr set time = 5 µs FIGURE 2-61: VR = 3.3V VIN = 4.3V IOUT = 1 mA to 150 mA Dynamic Load Response. Time = 200 µs/Div 1 tr set time = 5 µs FIGURE 2-64: 150 mA IOUT 1 µA tr1 Dynamic Load Response. 150 mA tr1 tf = 5 µs VR = 5.0V VIN = 6.0V IOUT = 1 mA to 150 mA CIN = COUT = 1 µF tf = 5 µs IOUT 1 mA VOUT (AC Coupled, 1V/Div) VOUT (AC Coupled, 1V/Div) VOUT VOUT Time = 200 µs/Div 1 VR = 5.0V VIN = 6.0V IOUT = 1 µA to 150 mA Time = 200 µs/Div tr set time = 5 µs 1 FIGURE 2-62: Dynamic Load Response. tr set time = 5 µs FIGURE 2-65: tr1 CIN = COUT = 1 µF tf = 5 µs IOUT 1 µA VOUT (AC Coupled, 1V/Div) VOUT Time = 200 µs/Div 1 VR = 5.0V VIN = 6.0V IOUT = 1 µA to 150 mA Output Noise (μV/¥Hz) 100 150 mA DS20005415C-page 16 Dynamic Load Response. Dynamic Load Response. CIN = 1 μF, COUT = 1 μF, IOUT = 50 mA 10 1 VR = 3.3V VIN = 4.3V 0.1 VR = 5.0V VIN = 6.0V 0.01 0.001 0.01 tr set time = 5 µs FIGURE 2-63: VR = 5.0V VIN = 6.0V IOUT = 1 mA to 150 mA FIGURE 2-66: 0.1 VR = 1.8V VIN = 3.5V 1 10 Frequency (kHz) 100 1000 Output Noise vs. Frequency. 2015-2016 Microchip Technology Inc. MCP1711 0 -10 -20 -30 -40 -50 -60 -70 -80 -90 -100 0.01 IOUT = 150 mA IOUT = 10 mA 0.1 1 VR = 1.2V VIN = 3.5V VINAC = 0.5Vpk-pk CIN = 0 µF COUT = 0 µF 10 100 PSRR (dB) PSRR (dB) Note: Unless otherwise indicated, VIN = 3.5V for VR < 2.5V or VIN = VR + 1V for VR 2.5V, IOUT = 1 mA, CIN = COUT = 0 µF, VSHDN = VIN, TA = +25°C. 1000 Frequency (kHz) PSRR (dB) PSRR (dB) IOUT = 150 mA -30 -40 -50 -60 -70 IOUT = 10 mA VR = 1.2V VIN = 3.5V VINAC = 0.5Vpk-pk CIN = 0 µF COUT = 1 µF -80 -90 -100 0.01 0.1 1 10 Frequency (kHz) 100 1000 0.1 1 PSRR (dB) PSRR (dB) IOUT = 150 mA IOUT = 10 mA VR = 1.8V VIN = 3.5V VINAC = 0.5Vpk-pk CIN = 0 µF COUT = 0 µF 10 100 Frequency (kHz) FIGURE 2-69: Power Supply Ripple Rejection vs. Frequency. 2015-2016 Microchip Technology Inc. 0.1 1 VR = 1.8V VIN = 3.5V VINAC = 0.5Vpk-pk CIN = 0 µF COUT = 1 µF 10 100 1000 0 IOUT = 150 mA -10 -20 -30 -40 -50 IOUT = 10 mA -60 VR = 3.3V -70 VIN = 4.3V V -80 INAC = 0.5Vpk-pk CIN = 0 µF -90 COUT = 0 µF -100 0.01 0.1 1 10 100 1000 Frequency (kHz) FIGURE 2-71: Power Supply Ripple Rejection vs. Frequency. FIGURE 2-68: Power Supply Ripple Rejection vs. Frequency. 0 -10 -20 -30 -40 -50 -60 -70 -80 -90 -100 0.01 IOUT = 10 mA FIGURE 2-70: Power Supply Ripple Rejection vs. Frequency. 0 -20 IOUT = 150 mA Frequency (kHz) FIGURE 2-67: Power Supply Ripple Rejection vs. Frequency. -10 0 -10 -20 -30 -40 -50 -60 -70 -80 -90 -100 0.01 1000 0 IOUT = 150 mA -10 -20 -30 -40 -50 -60 IOUT = 10 mA -70 -80 -90 -100 0.01 0.1 1 VR = 3.3V VIN = 4.3V VINAC = 0.5Vpk-pk CIN = 0 µF COUT = 1 µF 10 100 1000 Frequency (kHz) FIGURE 2-72: Power Supply Ripple Rejection vs. Frequency. DS20005415C-page 17 MCP1711 PSRR (dB) Note: Unless otherwise indicated, VIN = 3.5V for VR < 2.5V or VIN = VR + 1V for VR 2.5V, IOUT = 1 mA, CIN = COUT = 0 µF, VSHDN = VIN, TA = +25°C. 0 IOUT = 150 mA -10 -20 -30 -40 -50 IOUT = 10 mA -60 VR = 5.0V -70 VIN = 5.75V -80 VINAC = 0.5Vpk-pk CIN = 0 µF -90 COUT = 0 µF -100 0.01 0.1 1 10 100 1000 Frequency (kHz) PSRR (dB) FIGURE 2-73: Power Supply Ripple Rejection vs. Frequency. 0 I = 150 mA -10 OUT -20 -30 -40 -50 -60 -70 -80 -90 -100 0.01 0.1 IOUT = 10 mA VR = 5.0V VIN = 5.75V VINAC = 0.5Vpk-pk CIN = 0 µF COUT = 1 µF 1 10 100 1000 Frequency (kHz) FIGURE 2-74: Power Supply Ripple Rejection vs. Frequency. DS20005415C-page 18 2015-2016 Microchip Technology Inc. MCP1711 3.0 PIN DESCRIPTIONS The descriptions of the pins are listed in Table 3-1. TABLE 3-1: 3.1 PIN FUNCTION TABLE MCP1711 1X1 UQFN MCP1711 SOT-23 Symbol 4 1 VIN 2 2 GND Ground Terminal 3 3 SHDN Shutdown Input — 4 NC 1 5 VOUT 5 — EP Description Unregulated Input Supply Voltage Not Connected (SOT-23 only) Regulated Voltage Output Exposed Thermal Pad (1x1 UQFN only) Unregulated Input Voltage (VIN) 3.3 Shutdown Input (SHDN) The SHDN input is used to turn the LDO output voltage on and off. Connect the VIN pin to the output of the unregulated source voltage. Like all low dropout linear regulators, low-source impedance is necessary for ensuring stable operation of the LDO. The amount of capacitance required to ensure low-source impedance will depend on the proximity of the input source capacitors or battery type. For most applications, 0.1 µF of capacitance will ensure stable operation of the LDO circuit. If the output capacitor is used, the input capacitor should have a capacitance value equal to or greater than the output capacitor for performance applications. When the SHDN input is at logic High level, the LDO output voltage is enabled. When the SHDN pin is pulled to a logic Low level, the LDO output voltage is disabled. When the SHDN pin is pulled low, the VOUT pin is pulled down to the ground level via, parallel to the feedback resistors (R1 and R2), and the COUT discharge resistance (RDCHG). The input capacitor will supply the load current during transients and improve performance. For applications that have low load currents, the input capacitance requirement can be lowered. 3.4 The type of capacitor used may be ceramic, tantalum or aluminum electrolytic. The low ESR characteristics of the ceramic will yield better noise and Power Supply Rejection Ratio (PSRR) performance at high frequency. 3.2 Ground Terminal (GND) This is the regulator ground. Tie GND to the negative side of the output capacitor (if used) and to the negative side of the input capacitor. Only the LDO bias current flows out of this pin, so there is no high current. The LDO output regulation is referenced to this pin. Minimize voltage drops between this pin and the negative side of the load. If a PCB ground plane is not used, minimize the length of the trace between the GND pin and the ground line. 2015-2016 Microchip Technology Inc. The output voltage becomes unstable when the SHDN pin is left floating. Not Connected Pin (NC) The SOT-23 package has a pin that is not connected.This pin should be either left floating or tied to the ground plane. 3.5 Regulated Output Voltage (VOUT) Connect the VOUT pin to the positive side of the load and to the positive side of the output capacitor (if used). The positive side of the output capacitor should be physically located as close as possible to the LDO VOUT pin. The current flowing out of this pin is equal to the DC load current. 3.6 Exposed Thermal Pad (EP) The 4-lead 1 x 1 UQFN package has an exposed metal pad on the bottom of the package. The exposed metal pad gives the device better thermal characteristics by providing a good thermal path to either a PCB isolated plane or a PCB ground plane. The exposed pad of the package is not internally connected to GND. DS20005415C-page 19 MCP1711 4.0 DEVICE OVERVIEW The MCP1711 device is a 150 mA output current, low-dropout (LDO) voltage regulator. The low dropout voltage at high current makes it ideal for battery-powered applications. The input voltage ranges from 1.4V to 6.0V. Unlike other high output current LDOs, the MCP1711 typically draws only 600 nA quiescent current and maximum 45 µA ground current at 150 mA load. MCP1711 has a shutdown control input pin (SHDN). The output voltage options are fixed. 4.1 LDO Output Voltage The MCP1711 LDO has a fixed output voltage. The output voltage range is 1.2V to 5.0V. 4.2 Output Current and Current Limiting The MCP1711 is tested and ensured to supply a maximum of 150 mA of output current. The device can provide a highly accurate output voltage even if the output current is only 1 µA (very light load). The MCP1711 also features a true output current foldback. If an excessive load, due to a low impedance short-circuit condition at the output load, is detected, the output current and voltage will fold back towards 80 mA and 0V, respectively. The output voltage and current will resume normal levels when the excessive load is removed. If the overload condition is a soft overload, the MCP1711 will supply higher load currents of up to 270 mA typical. This allows for device usage in applications that have pulsed load currents having an average output current value of 150 mA or less. DS20005415C-page 20 4.3 Output Capacitor The MCP1711 can provide a stable output voltage even without an additional output capacitor due to its excellent internal phase compensation, so that a minimum output capacitance is not required. In order to improve the load step response and PSRR, an output capacitor can be added. A value in the range of 0.1 µF to 1.0 µF is recommended for most applications. The capacitor should be placed as close as possible to the VOUT pin and the GND pin. The device is compatible with low ESR ceramic capacitors. Ceramic materials like X7R and X5R have low temperature coefficients and are well within the acceptable ESR range required. A typical 1 µF X7R 0805 capacitor has an ESR of 50 m. 4.4 Input Capacitor Low-input source impedance is necessary for the LDO output to operate properly. When operating from batteries, or in applications with long lead length (> 10 inches) between the input source and the LDO, some input capacitance is recommended. A minimum of 0.1 µF to 1.0 µF is recommended for most applications. For applications that have output step load requirements, the input capacitance of the LDO is very important. The input capacitance provides the LDO with a good local low-impedance source to pull the transient current from, so it responds quickly to the output load step. For good step response performance, the input capacitor should be of an equivalent or higher value than the output capacitor. The capacitor should be placed as close to the input of the LDO as is practical. Larger input capacitors will also help reduce any high-frequency noise on the input and output of the LDO as well as reduce the effects of any inductance that exists between the input source voltage and the input capacitance of the LDO. 2015-2016 Microchip Technology Inc. MCP1711 4.5 Shutdown Input (SHDN) The MCP1711 internal circuitry can be shut down via the signal from the SHDN pin. The SHDN input is an active-low input signal that turns the LDO on and off. The shutdown threshold is a fixed voltage level. The minimum value of this shutdown threshold required to turn the output on is 0.91V. The maximum value required to turn the output off is 0.38V. In Shutdown mode, the VOUT pin will be pulled down to the ground level via, parallel to feedback resistors and COUT discharge resistance RDCHG. In this state, the application is protected from a glitch operation caused by the electric charge at the output capacitor. Moreover, the discharge time of the output capacitor is set by the COUT auto-discharge resistance (RDCHG) and the output capacitor COUT. By setting the time constant of a COUT auto-discharge resistance value (RDCHG) and the output capacitor value (COUT) as = COUT x RDCHG, the output voltage after discharge via the internal switch is calculated using Equation 4-1: Note: The RDCHG depends on VIN; when VIN is high the RDCHG is low. EQUATION 4-1: V OUT t = V OUT e –t or t = ln V OUT V OUT t Where: VOUT(t) = The output voltage during discharging VOUT = The initial output voltage t = Discharge time = COUT x RDCHG 4.6 Dropout Voltage Dropout Voltage is defined as the input-to-output voltage differential at which the output voltage drops 2% below the nominal value that was measured with a VR + 1.0V differential applied. See Section 1.0 “Electrical Characteristics”, for minimum and maximum voltage specifications. 2015-2016 Microchip Technology Inc. DS20005415C-page 21 MCP1711 5.0 APPLICATION CIRCUITS AND ISSUES 5.1 Typical Application The MCP1711 is most commonly used as a voltage regulator. Its low quiescent current and low dropout voltage make it ideal for a multitude of battery-powered applications. MCP1711 VIN 3.6V to 4.8V VIN VOUT CIN VOUT = 1.8V IOUT = 50 mA COUT SHDN GND Application Input conditions Package Type = 5-Lead SOT-23 Input Voltage Range = 3.5V to 4.8V VIN maximum = 4.8V VOUT typical = 1.8V IOUT = 50 mA maximum FIGURE 5-1: 5.2 Typical Application Circuit. Power Calculations 5.2.1 POWER DISSIPATION The internal power dissipation of the MCP1711 is a function of input voltage, output voltage and output current. The power dissipation, as a result of the quiescent current draw, is so low that it is insignificant (0.6 µA x VIN). To calculate the internal power dissipation of the LDO use Equation 5-1: EQUATION 5-1: P LDO = V IN(MAX – V OUT(MIN I OUT MAX Where: PLDO = LDO pass device internal power dissipation The thermal resistance from junction-to-ambient for the 5-Lead SOT-23 package is estimated at: • 166.67°C with JEDEC 51-7 FR-4 board with thermal vias and • 400 °C/W when the device is not mounted on the PCB, or is mounted on the one layer PCB with minimal copper that doesn't provide any additional cooling. EQUATION 5-2: T J MAX = P TOTAL R JA + T A MAX Where: TJ(MAX) = Maximum continuous junction temperature PTOTAL = Total device power dissipation RJA = Thermal resistance from junction to ambient TA(MAX) = Maximum ambient temperature The maximum power dissipation capability for a package can be calculated if given the junction-to-ambient thermal resistance (RJA) and the maximum ambient temperature for the application. Equations 5-3 to 5-5 can be used to determine the package maximum internal power dissipation: EQUATION 5-3: T J MAX – T A MAX P D MAX = -------------------------------------------------R JA Where: PD(MAX) = Maximum device power dissipation TJ(MAX) = Maximum continuous junction temperature TA(MAX) = Maximum ambient temperature RJA = Thermal resistance from junction to ambient EQUATION 5-4: VIN(MAX) = Maximum input voltage VOUT(MIN) = LDO minimum output voltage, including the line and load regulations The maximum continuous operating junction temperature specified for the MCP1711 is +125°C. To estimate the internal junction temperature of the MCP1711, the total internal power dissipation is multiplied by the thermal resistance from junction-to-ambient (RJA). DS20005415C-page 22 T J RISE = P D MAX R JA Where: TJ(RISE) = Rise in device junction temperature over the ambient temperature PD(MAX) = Maximum device power dissipation RJA = Thermal resistance from junction to ambient 2015-2016 Microchip Technology Inc. MCP1711 5.3.1.1 EQUATION 5-5: T J = T J RISE + T A Where: TJ = Junction temperature TJ(RISE) = Rise in device junction temperature over the ambient temperature Device Junction Temperature Rise The internal junction temperature rise is a function of internal power dissipation and the thermal resistance from junction to ambient for the application. The thermal resistance from junction to ambient (RJA) is derived from an EIA/JEDEC standard for measuring thermal resistance for small surface mount packages. Internal power dissipation, junction temperature rise, junction temperature and maximum power dissipation are calculated in the following example. The power dissipation, as a result of ground current, is small enough to be neglected. The EIA/JEDEC specification is JESD51-7, High Effective Thermal Conductivity Test Board for Leaded Surface Mount Packages. The standard describes the test method and board specifications for measuring the thermal resistance from junction to ambient. The actual thermal resistance for a particular application can vary depending on many factors, such as copper area and thickness. Refer to AN792 – A Method to Determine How Much Power a SOT-23 Can Dissipate in an Application (DS00792), for more information regarding this subject. 5.3.1 EXAMPLE 5-2: TA = Ambient temperature 5.3 Voltage Regulator POWER DISSIPATION EXAMPLE EXAMPLE 5-1: POWER DISSIPATION TJ(RISE) = PTOTAL x RJA TJRISE = 153.5 mW x 400.0°C/W Package Package Type = SOT-23 TJRISE = 61.4°C Input Voltage VIN = 3.5V to 4.8V LDO Output Voltages and Currents VOUT = 1.8V IOUT = 50 mA Maximum Ambient Temperature 5.3.1.2 EXAMPLE 5-3: TJ = TJRISE + TA(MAX) TA(MAX) = +40°C TJ = 61.4°C + 40°C = 101.4°C Internal Power Dissipation Internal Power dissipation is the product of the LDO output current times the voltage across the LDO (VIN to VOUT). PLDO(MAX) = (VIN(MAX) - VOUT(MIN)) x IOUT(MAX) VOUT(MIN) = 1.78V - 0.05V = 1.73V, where 1.78V is the minimum output voltage due to accuracy, and 0.05V is the load regulation; due to very small input voltage range, the line regulation is neglected Junction Temperature Estimate To estimate the internal junction temperature, the calculated temperature rise is added to the ambient or offset temperature. For this example, the worst-case junction temperature is estimated: 5.3.1.3 Maximum Package Power Dissipation Example at +40°C Ambient Temperature EXAMPLE 5-4: SOT-23 (400.0 °C/W = RJA) PD(MAX) = (125°C - 40°C)/400°C/W PD(MAX) = 212 mW PLDO = (4.8V - 1.73V) x 50 mA PLDO = 153.5 mW 2015-2016 Microchip Technology Inc. DS20005415C-page 23 MCP1711 5.4 Voltage Reference The MCP1711 can be used not only as a regulator, but also as a low quiescent current voltage reference. In many microcontroller applications, the initial accuracy of the reference can be calibrated using production test equipment or by using a ratio measurement. When the initial accuracy is calibrated, the thermal stability and line regulation tolerance are the only errors introduced by the MCP1711 LDO. The low cost, low quiescent current and small ceramic output capacitor are all advantages when using the MCP1711 as a voltage reference. Ratio Metric Reference PIC® Microcontroller MCP1711 0.6 µA Bias VIN VOUT CIN 0.1µF GND COUT 0.1µF VREF ADO AD1 Bridge Sensor FIGURE 5-2: 5.5 Using the MCP1711 as a Voltage Reference. Pulsed Load Applications For some applications, there are pulsed load current events that may exceed the specified 150 mA maximum specification of the MCP1711. The internal current limit of the MCP1711 will prevent high peak-load demands from causing nonrecoverable damage. The 150 mA rating is a maximum average continuous rating. As long as the average current does not exceed 150 mA, higher pulsed load currents can be applied to the MCP1711. The typical current limit for the MCP1711 is 270 mA (TA = +25°C). DS20005415C-page 24 2015-2016 Microchip Technology Inc. MCP1711 6.0 PACKAGING INFORMATION 6.1 Package Marking Information 4-Lead UQFN (1x1x0.6 mm) XX NN Example Device Code MCP1711T-12I/5X P2NN MCP1711T-18I/5X P8NN MCP1711T-22I/5X PCNN MCP1711T-25I/5X PFNN MCP1711T-30I/5X PNNN MCP1711T-33I/5X PSNN MCP1711T-50I/5X RANN 5-Lead SOT-23 Legend: XX...X Y YY WW NNN e3 * Note: P2 56 Example Device Code MCP1711T-12I/OT 9A2xx MCP1711T-18I/OT 9A8xx MCP1711T-19I/OT 9A9xx MCP1711T-22I/OT 9ACxx MCP1711T-25I/OT 9AFxx MCP1711T-30I/OT 9ANxx MCP1711T-33I/OT 9ASxx MCP1711T-50I/OT 9BAxx 9A802 Customer-specific information Year code (last digit of calendar year) Year code (last 2 digits of calendar year) Week code (week of January 1 is week ‘01’) Alphanumeric traceability code Pb-free JEDEC designator for Matte Tin (Sn) This package is Pb-free. The Pb-free JEDEC designator ( e3 ) can be found on the outer packaging for this package. In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for customer-specific information. 2015-2016 Microchip Technology Inc. DS20005415C-page 25 MCP1711 4-Lead Plastic Ultra Thin Quad Flatpack No-Leads (5X) - 1x1x0.6mm [UQFN] (Formerly USPQ-4B04) Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging D A B 3 N (DATUM A) (DATUM B) E 2X 0.05 C 2 1 2X TOP VIEW 0.05 C C A SEATING PLANE SIDE VIEW e L3 2 1 D2 L2 L1 N 3X CH 3 E2 3X CH 4X b BOTTOM VIEW Microchip Technology Drawing C04-393B Sheet 1 of 2 DS20005415C-page 26 2015-2016 Microchip Technology Inc. MCP1711 4-Lead Plastic Ultra Thin Quad Flatpack No-Leads (5X) - 1x1x0.6mm [UQFN] (Formerly USPQ-4B04) Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging Number of Terminals Pitch Overall Height Overall Width Exposed Pad Width Overall Length Exposed Pad Length Terminal Width Terminal Length Terminal Length Terminal Chamfer Units Dimension Limits N e A E E2 D D2 b L1 L2 L3 CH MIN 0.43 0.43 0.20 0.20 0.27 0.02 - MILLIMETERS NOM 4 0.65 BSC 1.00 BSC 0.48 1.00 BSC 0.48 0.25 0.25 0.32 0.07 0.18 MAX 0.60 0.53 0.53 0.30 0.30 0.37 0.12 - Notes: 1. Pin 1 visual index feature may vary, but must be located within the hatched area. 2. Package is saw singulated 3. Dimensioning and tolerancing per ASME Y14.5M BSC: Basic Dimension. Theoretically exact value shown without tolerances. REF: Reference Dimension, usually without tolerance, for information purposes only. Microchip Technology Drawing C04-393B Sheet 2 of 2 2015-2016 Microchip Technology Inc. DS20005415C-page 27 MCP1711 4-Lead Plastic Ultra Thin Quad Flatpack No-Leads (5X) - 1x1x0.6mm [UQFN] (Formerly USPQ-4B04) Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging 4X X1 3X X2 X4 4X Y3 4 3X Y1 Y2 2 1 Y4 E SILK SCREEN RECOMMENDED LAND PATTERN Units Dimension Limits E X1 X2 X4 Y1 Y2 Y3 Y4 MIN MILLIMETERS NOM 0.65 BSC 0.25 0.18 0.48 0.40 0.47 0.22 0.48 MAX Notes: 1. Dimensioning and tolerancing per ASME Y14.5M BSC: Basic Dimension. Theoretically exact value shown without tolerances. Microchip Technology Drawing C04-2393B DS20005415C-page 28 2015-2016 Microchip Technology Inc. MCP1711 )RUWKHPRVWFXUUHQWSDFNDJHGUDZLQJVSOHDVHVHHWKH0LFURFKLS3DFNDJLQJ6SHFLILFDWLRQORFDWHGDW KWWSZZZPLFURFKLSFRPSDFNDJLQJ b N E E1 3 2 1 e e1 D A2 A c φ A1 L L1 8QLWV 'LPHQVLRQ/LPLWV 1XPEHURI3LQV 0,//,0(7(56 0,1 120 0$; 1 /HDG3LWFK H %6& 2XWVLGH/HDG3LWFK H 2YHUDOO+HLJKW $ ± 0ROGHG3DFNDJH7KLFNQHVV $ ± 6WDQGRII $ ± 2YHUDOO:LGWK ( ± 0ROGHG3DFNDJH:LGWK ( ± 2YHUDOO/HQJWK ' ± %6& )RRW/HQJWK / ± )RRWSULQW / ± )RRW$QJOH ± /HDG7KLFNQHVV F ± /HDG:LGWK E ± 'LPHQVLRQV'DQG(GRQRWLQFOXGHPROGIODVKRUSURWUXVLRQV0ROGIODVKRUSURWUXVLRQVVKDOOQRWH[FHHGPPSHUVLGH 'LPHQVLRQLQJDQGWROHUDQFLQJSHU$60(<0 %6& %DVLF'LPHQVLRQ7KHRUHWLFDOO\H[DFWYDOXHVKRZQZLWKRXWWROHUDQFHV 0LFURFKLS 7HFKQRORJ\ 'UDZLQJ &% 2015-2016 Microchip Technology Inc. DS20005415C-page 29 MCP1711 Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging DS20005415C-page 30 2015-2016 Microchip Technology Inc. MCP1711 APPENDIX A: REVISION HISTORY Revision C (March 2016) The following is the list of modifications: Minor typographical corrections Revision B (October 2015) The following is the list of modifications: • Updated thermal resistances in Section 1.0, Electrical Characteristics. • Updated Section 2.0, Typical Performance Curves with new load step screenshots. Revision A (June 2015) Original release of this document. 2015-2016 Microchip Technology Inc. DS20005415C-page 31 MCP1711 NOTES: DS20005415C-page 32 2015-2016 Microchip Technology Inc. MCP1711 PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, contact your local Microchip representative or sales office. PART NO. [X](1) -X X /XX Output Temperature Package Voltage Range Device Tape and Reel Option 150 mA Ultra-Low Quiescent Current, Capacitorless LDO Regulator Examples: a) MCP1711T-12I/OT: b) MCP1711T-18I/OT: Device: MCP1711: Output Voltage: 12 18 19 22 25 30 33 50 = = = = = = = = 1.2V 1.8V 1.9V 2.2V 2.5V 3.0V 3.3V 5.0V c) MCP1711T-19I/OT: d) MCP1711T-22I/OT: Temperature Range: I = -40°C to +85°C (Industrial) e) MCP1711T-25I/OT: Packages: OT 5X = = Plastic Small Outline Transistor, 5-Lead SOT-23 Plastic Ultra Thin Quad Flatpack No-Leads, 4-Lead 1x1 UQFN f) MCP1711T-30I/OT: g) MCP1711T-33I/OT: h) MCP1711T-50I/OT: a) MCP1711T-12I/5X: b) MCP1711T-18I/5X: c) MCP1711T-22I/5X: d) MCP1711T-25I/5X: e) MCP1711T-30I/5X: f) MCP1711T-33I/5X: Note 1: 2015-2016 Microchip Technology Inc. Tape and Reel 1.2V Output Voltage Industrial temperature 5LD SOT-23 Tape and Reel 1.8V Output Voltage Industrial temperature 5LD SOT-23 Tape and Reel 1.9V Output Voltage Industrial temperature 5LD SOT-23 Tape and Reel 2.2V Output Voltage Industrial temperature 5LD SOT-23 Tape and Reel 2.5V Output Voltage Industrial temperature 5LD SOT-23 Tape and Reel 3.0V Output Voltage Industrial temperature 5LD SOT-23 Tape and Reel 3.3V Output Voltage Industrial temperature 5LD SOT-23 Tape and Reel 5V Output Voltage Industrial temperature 5LD SOT-23 Tape and Reel 1.2V Output Voltage Industrial temperature 4LD UQFN Tape and Reel 1.8V Output Voltage Industrial temperature 4LD UQFN Tape and Reel 2.2V Output Voltage Industrial temperature 4LD UQFN Tape and Reel 2.5V Output Voltage Industrial temperature 4LD UQFN Tape and Reel 3.0V Output Voltage Industrial temperature 4LD UQFN Tape and Reel 3.3V Output Voltage Industrial temperature 4LD UQFN Tape and Reel identifier only appears in the catalog part number description. This identifier is used for ordering purposes and is not printed on the device package. Check with your Microchip Sales Office for package availability with the Tape and Reel option. DS20005415C-page 33 MCP1711 NOTES: DS20005415C-page 34 2015-2016 Microchip Technology Inc. Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet. • Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the intended manner and under normal conditions. • There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property. • Microchip is willing to work with the customer who is concerned about the integrity of their code. • Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not mean that we are guaranteeing the product as “unbreakable.” Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act. Information contained in this publication regarding device applications and the like is provided only for your convenience and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. MICROCHIP MAKES NO REPRESENTATIONS OR WARRANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED, WRITTEN OR ORAL, STATUTORY OR OTHERWISE, RELATED TO THE INFORMATION, INCLUDING BUT NOT LIMITED TO ITS CONDITION, QUALITY, PERFORMANCE, MERCHANTABILITY OR FITNESS FOR PURPOSE. Microchip disclaims all liability arising from this information and its use. Use of Microchip devices in life support and/or safety applications is entirely at the buyer’s risk, and the buyer agrees to defend, indemnify and hold harmless Microchip from any and all damages, claims, suits, or expenses resulting from such use. No licenses are conveyed, implicitly or otherwise, under any Microchip intellectual property rights unless otherwise stated. Microchip received ISO/TS-16949:2009 certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona; Gresham, Oregon and design centers in California and India. The Company’s quality system processes and procedures are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping devices, Serial EEPROMs, microperipherals, nonvolatile memory and analog products. In addition, Microchip’s quality system for the design and manufacture of development systems is ISO 9001:2000 certified. QUALITYMANAGEMENTSYSTEM CERTIFIEDBYDNV == ISO/TS16949== 2015-2016 Microchip Technology Inc. Trademarks The Microchip name and logo, the Microchip logo, AnyRate, dsPIC, FlashFlex, flexPWR, Heldo, JukeBlox, KeeLoq, KeeLoq logo, Kleer, LANCheck, LINK MD, MediaLB, MOST, MOST logo, MPLAB, OptoLyzer, PIC, PICSTART, PIC32 logo, RightTouch, SpyNIC, SST, SST Logo, SuperFlash and UNI/O are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. ClockWorks, The Embedded Control Solutions Company, ETHERSYNCH, Hyper Speed Control, HyperLight Load, IntelliMOS, mTouch, Precision Edge, and QUIET-WIRE are registered trademarks of Microchip Technology Incorporated in the U.S.A. Analog-for-the-Digital Age, Any Capacitor, AnyIn, AnyOut, BodyCom, chipKIT, chipKIT logo, CodeGuard, dsPICDEM, dsPICDEM.net, Dynamic Average Matching, DAM, ECAN, EtherGREEN, In-Circuit Serial Programming, ICSP, Inter-Chip Connectivity, JitterBlocker, KleerNet, KleerNet logo, MiWi, motorBench, MPASM, MPF, MPLAB Certified logo, MPLIB, MPLINK, MultiTRAK, NetDetach, Omniscient Code Generation, PICDEM, PICDEM.net, PICkit, PICtail, PureSilicon, RightTouch logo, REAL ICE, Ripple Blocker, Serial Quad I/O, SQI, SuperSwitcher, SuperSwitcher II, Total Endurance, TSHARC, USBCheck, VariSense, ViewSpan, WiperLock, Wireless DNA, and ZENA are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. SQTP is a service mark of Microchip Technology Incorporated in the U.S.A. Silicon Storage Technology is a registered trademark of Microchip Technology Inc. in other countries. GestIC is a registered trademarks of Microchip Technology Germany II GmbH & Co. KG, a subsidiary of Microchip Technology Inc., in other countries. All other trademarks mentioned herein are property of their respective companies. © 2015-2016, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved. 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