Data Sheet

Document Number: MPC5554
Rev. 4, May 2012
Freescale Semiconductor
Data Sheet: Technical Data
MPC5554
Microcontroller Data Sheet
by: Microcontroller Division
This document provides electrical specifications, pin
assignments, and package diagrams for the MPC5554
microcontroller device. For functional characteristics,
refer to the MPC5553/MPC5554 Microcontroller
Reference Manual.
1
Contents
1
Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2
Ordering Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
3
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . 4
3.1 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3.2 Thermal Characteristics. . . . . . . . . . . . . . . . . . . . . . 5
3.3 Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
3.4 EMI (Electromagnetic Interference) Characteristics 8
3.5 ESD (Electromagnetic Static Discharge) Characteristics9
3.6 Voltage Regulator Controller (VRC) and
Power-On Reset (POR) Electrical Specifications9
3.7 Power-Up/Down Sequencing . . . . . . . . . . . . . . . . 10
3.8 DC Electrical Specifications. . . . . . . . . . . . . . . . . . 14
3.9 Oscillator and FMPLL Electrical Characteristics . . 20
3.10 eQADC Electrical Characteristics . . . . . . . . . . . . . 22
3.11 H7Fa Flash Memory Electrical Characteristics . . . 23
3.12 AC Specifications . . . . . . . . . . . . . . . . . . . . . . . . . 24
3.13 AC Timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
4
Mechanicals. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45
4.1 MPC5553546667 416 PBGA Pinout . . . . . . . . . . . 45
4.2 MPC5554 416-Pin Package Dimensions . . . . . . . 52
5
Revision History for the MPC5554 Data Sheet . . . . . . 54
5.1 Changes between Revision 3 and Revision 4 . . . . 54
5.2 Changes between Revision 2 and Revision 3 . . . . 54
Overview
The MPC5554 microcontroller (MCU) is a member of
the MPC5500 family of microcontrollers built on the
Power Architectureembedded technology. This family
of parts has many new features coupled with high
performance CMOS technology to provide substantial
reduction of cost per feature and significant performance
improvement over the MPC500 family.
The host processor core of this device complies with the
Power Architecture embedded category that is 100%
user-mode compatible (including floating point library)
with the original PowerPC instruction set. The embedded
architecture enhancements improve the performance in
embedded applications. The core also has additional
instructions, including digital signal processing (DSP)
instructions, beyond the original PowerPC instruction
set.
© Freescale Semiconductor, Inc., 2008,2012. All rights reserved.
Overview
The MPC5500 family of parts contains many new features coupled with high performance CMOS
technology to provide significant performance improvement over the MPC565.
The MPC5554 has two levels of memory hierarchy. The fastest accesses are to the 32-kilobytes (KB)
unified cache. The next level in the hierarchy contains the 64-KB on-chip internal SRAM and
two-megabytes (MB) internal flash memory. The internal SRAM and flash memory hold instructions and
data. The external bus interface is designed to support most of the standard memories used with the
MPC5xx family.
The complex input/output timer functions of the MPC5554 are performed by two enhanced time processor
unit (eTPU) engines. Each eTPU engine controls 32 hardware channels, providing a total of 64 hardware
channels. The eTPU has been enhanced over the TPU by providing: 24-bit timers, double-action hardware
channels, variable number of parameters per channel, angle clock hardware, and additional control and
arithmetic instructions. The eTPU is programmed using a high-level programming language.
The less complex timer functions of the MPC5554 are performed by the enhanced modular input/output
system (eMIOS). The eMIOS’ 24 hardware channels are capable of single-action, double-action,
pulse-width modulation (PWM), and modulus-counter operations. Motor control capabilities include
edge-aligned and center-aligned PWM.
Off-chip communication is performed by a suite of serial protocols including controller area networks
(FlexCANs), enhanced deserial/serial peripheral interfaces (DSPIs), and enhanced serial communications
interfaces (eSCIs). The DSPIs support pin reduction through hardware serialization and deserialization of
timer channels and general-purpose input/output (GPIOs) signals.
The MCU has an on-chip enhanced queued dual analog-to-digital converter (eQADC). 324 s40-channels.
The system integration unit (SIU) performs several chip-wide configuration functions. Pad configuration
and general-purpose input and output (GPIO) are controlled from the SIU. External interrupts and reset
control are also determined by the SIU. The internal multiplexer submodule provides multiplexing of
eQADC trigger sources, daisy chaining the DSPIs, and external interrupt signal multiplexing.
MPC5554 Microcontroller Data Sheet, Rev. 4
2
Freescale Semiconductor
Ordering Information
2
Ordering Information
M PC 5554 M ZP 80 R 2
Qualification status
Core code
Device number
Temperature range
Package identifier
Operating frequency (MHz)
Tape and reel status
Temperature Range
M = –40° C to 125° C
A = –55° C to 125° C
Package Identifier
ZP = 416PBGA SnPb
VR = 416PBGA Pb-free
Operating Frequency
80 = 80 MHz
112 = 112 MHz
132 = 132 MHz
Tape and Reel Status
R2 = Tape and reel
(blank) = Trays
Qualification Status
P = Pre qualification
M = Fully spec. qualified
Note: Not all options are available on all devices. Refer to Table 1.
Figure 1. MPC5500 Family Part Number Example
Unless noted in this data sheet, all specifications apply from TL to TH.
Table 1. Orderable Part Numbers
Freescale Part
Number1
Speed (MHz)
Package Description
Nominal
Max. 3 (fMAX)
132
132
112
114
80
82
MPC5554AVR132
132
132
MPC5554MZP132
132
132
112
114
80
82
132
132
MPC5554MVR132
MPC5554MVR112
MPC5554MVR80
MPC5554MZP112
MPC5554MZP80
MPC5554AZP132
Operating Temperature 2
MPC5554 416 package
Lead-free (PbFree)
MPC5554 416 package
Leaded (SnPb)
Min. (TL)
Max. (TH)
–40° C
125° C
–55° C
125° C
–40° C
125° C
–55° C
125° C
1
All devices are PPC5554, rather than MPC5554, until product qualifications are complete. Not all configurations are available in
the PPC parts.
2 The lowest ambient operating temperature is referenced by T ; the highest ambient operating temperature is referenced by T .
L
H
3 Speed is the nominal maximum frequency. Max. speed is the maximum speed allowed including frequency modulation (FM).
82 MHz parts allow for 80 MHz system clock + 2% FM; 114 MHz parts allow for 112 MHz system clock + 2% FM; and132 MHz
parts allow for 128 MHz system clock + 2% FM.
MPC5554 Microcontroller Data Sheet, Rev. 4
Freescale Semiconductor
3
Electrical Characteristics
3
Electrical Characteristics
This section contains detailed information on power considerations, DC/AC electrical characteristics, and
AC timing specifications for the MCU.
3.1
Maximum Ratings
Table 2. Absolute Maximum Ratings 1
Spec
Characteristic
Symbol
Min.
Max.
Unit
1
1.5 V core supply voltage 2
VDD
–0.3
1.7
V
2
Flash program/erase voltage
VPP
–0.3
6.5
V
4
Flash read voltage
VFLASH
–0.3
4.6
V
5
SRAM standby voltage
VSTBY
–0.3
1.7
V
6
Clock synthesizer voltage
VDDSYN
–0.3
4.6
V
7
3.3 V I/O buffer voltage
VDD33
–0.3
4.6
V
8
Voltage regulator control input voltage
VRC33
–0.3
4.6
V
9
Analog supply voltage (reference to VSSA)
VDDA
–0.3
5.5
V
VDDE
–0.3
4.6
V
VDDEH
–0.3
6.5
V
–1.0 5
–1.0 5
6.5 6
4.6 7
V
10
11
12
I/O supply voltage (fast I/O pads)
3
I/O supply voltage (slow and medium I/O pads)
3
4
DC input voltage
VDDEH powered I/O pads
VDDE powered I/O pads
VIN
13
Analog reference high voltage (reference to VRL)
VRH
–0.3
5.5
V
14
VSS to VSSA differential voltage
VSS – VSSA
–0.1
0.1
V
15
VDD to VDDA differential voltage
VDD – VDDA
–VDDA
VDD
V
16
VREF differential voltage
VRH – VRL
–0.3
5.5
V
17
VRH to VDDA differential voltage
VRH – VDDA
–5.5
5.5
V
18
VRL to VSSA differential voltage
VRL – VSSA
–0.3
0.3
V
19
VDDEH to VDDA differential voltage
VDDEH – VDDA
–VDDA
VDDEH
V
20
VDDF to VDD differential voltage
VDDF – VDD
–0.3
0.3
V
21
VRC33 to VDDSYN differential voltage spec has been moved to Table 9 DC Electrical Specifications, Spec 43a.
22
VSSSYN to VSS differential voltage
VSSSYN – VSS
–0.1
0.1
V
23
VRCVSS to VSS differential voltage
VRCVSS – VSS
–0.1
0.1
V
24
Maximum DC digital input current 8
(per pin, applies to all digital pins) 4
IMAXD
–2
2
mA
25
Maximum DC analog input current 9
(per pin, applies to all analog pins)
IMAXA
–3
3
mA
26
Maximum operating temperature range 10
Die junction temperature
TJ
TL
150.0
oC
27
Storage temperature range
TSTG
–55.0
150.0
oC
MPC5554 Microcontroller Data Sheet, Rev. 4
4
Freescale Semiconductor
Electrical Characteristics
Table 2. Absolute Maximum Ratings 1 (continued)
Spec
28
29
Characteristic
Symbol
Min.
Max.
Maximum solder temperature 11
Lead free (Pb-free)
Leaded (SnPb)
TSDR
—
—
260.0
245.0
Moisture sensitivity level 12
MSL
—
3
Unit
o
C
1
Functional operating conditions are given in the DC electrical specifications. Absolute maximum ratings are stress ratings only,
and functional operation at the maxima is not guaranteed. Stress beyond any of the listed maxima can affect device reliability
or cause permanent damage to the device.
2
1.5 V ± 10% for proper operation. This parameter is specified at a maximum junction temperature of 150 oC.
3
All functional non-supply I/O pins are clamped to VSS and VDDE, or VDDEH.
4
AC signal overshoot and undershoot of up to ± 2.0 V of the input voltages is permitted for an accumulative duration of
60 hours over the complete lifetime of the device (injection current not limited for this duration).
5
Internal structures hold the voltage greater than –1.0 V if the injection current limit of 2 mA is met. Keep the negative DC
voltage greater than –0.6 V on eTPUB[15] and SINB during the internal power-on reset (POR) state.
6 Internal structures hold the input voltage less than the maximum voltage on all pads powered by V
DDEH supplies, if the
maximum injection current specification is met (2 mA for all pins) and VDDEH is within the operating voltage specifications.
7 Internal structures hold the input voltage less than the maximum voltage on all pads powered by V
DDE supplies, if the maximum
injection current specification is met (2 mA for all pins) and VDDE is within the operating voltage specifications.
8 Total injection current for all pins (including both digital and analog) must not exceed 25 mA.
9 Total injection current for all analog input pins must not exceed 15 mA.
10 Lifetime operation at these specification limits is not guaranteed.
11 Moisture sensitivity profile per IPC/JEDEC J-STD-020D.
12 Moisture sensitivity per JEDEC test method A112.
3.2
Thermal Characteristics
The shaded rows in the following table indicate information specific to a four-layer board.
Table 3. MPC5554 Thermal Characteristics
Spec
6
RJA
24
°C/W
natural convection (four-layer board 2s2p)
RJA
18
°C/W
(@200 ft./min., one-layer board)
RJMA
19
°C/W
(@200 ft./min., four-layer board 2s2p)
RJMA
15
°C/W
RJB
9
°C/W
RJC
5
°C/W
JT
2
°C/W
Junction to ambient
4
Junction to ambient
1, 3
5
Junction to board 4 (four-layer board 2s2p)
7
5
natural convection (one-layer board)
1, 3
6
4
Unit
Junction to ambient
3
3
416 PBGA
1, 3,
2
2
Symbol
Junction to ambient
1
1
MPC5554 Thermal Characteristic
1, 2,
Junction to case
5
6
Junction to package top , natural convection
Junction temperature is a function of on-chip power dissipation, package thermal resistance, mounting site (board)
temperature, ambient temperature, air flow, power dissipation of other components on the board, and board thermal
resistance.
Per SEMI G38-87 and JEDEC JESD51-2 with the single-layer board horizontal.
Per JEDEC JESD51-6 with the board horizontal.
Thermal resistance between the die and the printed circuit board per JEDEC JESD51-8. Board temperature is measured on
the top surface of the board near the package.
Indicates the average thermal resistance between the die and the case top surface as measured by the cold plate method
(MIL SPEC-883 Method 1012.1) with the cold plate temperature used for the case temperature.
Thermal characterization parameter indicating the temperature difference between package top and the junction temperature
per JEDEC JESD51-2.
MPC5554 Microcontroller Data Sheet, Rev. 4
Freescale Semiconductor
5
Electrical Characteristics
3.2.1
General Notes for Specifications at Maximum Junction Temperature
An estimation of the device junction temperature, TJ, can be obtained from the equation:
TJ = TA + (RJA  PD)
where:
TA = ambient temperature for the package (oC)
RJA = junction to ambient thermal resistance (oC/W)
PD = power dissipation in the package (W)
The thermal resistance values used are based on the JEDEC JESD51 series of standards to provide
consistent values for estimations and comparisons. The difference between the values determined for the
single-layer (1s) board compared to a four-layer board that has two signal layers, a power and a ground
plane (2s2p), demonstrate that the effective thermal resistance is not a constant. The thermal resistance
depends on the:
• Construction of the application board (number of planes)
• Effective size of the board which cools the component
• Quality of the thermal and electrical connections to the planes
• Power dissipated by adjacent components
Connect all the ground and power balls to the respective planes with one via per ball. Using fewer vias to
connect the package to the planes reduces the thermal performance. Thinner planes also reduce the thermal
performance. When the clearance between the vias leave the planes virtually disconnected, the thermal
performance is also greatly reduced.
As a general rule, the value obtained on a single-layer board is within the normal range for the tightly
packed printed circuit board. The value obtained on a board with the internal planes is usually within the
normal range if the application board has:
• One oz. (35 micron nominal thickness) internal planes
• Components are well separated
• Overall power dissipation on the board is less than 0.02 W/cm2
The thermal performance of any component depends on the power dissipation of the surrounding
components. In addition, the ambient temperature varies widely within the application. For many natural
convection and especially closed box applications, the board temperature at the perimeter (edge) of the
package is approximately the same as the local air temperature near the device. Specifying the local
ambient conditions explicitly as the board temperature provides a more precise description of the local
ambient conditions that determine the temperature of the device.
MPC5554 Microcontroller Data Sheet, Rev. 4
6
Freescale Semiconductor
Electrical Characteristics
At a known board temperature, the junction temperature is estimated using the following equation:
TJ = TB + (RJB  PD)
where:
TJ = junction temperature (oC)
TB = board temperature at the package perimeter (oC/W)
RJB = junction-to-board thermal resistance (oC/W) per JESD51-8
PD = power dissipation in the package (W)
When the heat loss from the package case to the air does not factor into the calculation, an acceptable value
for the junction temperature is predictable. Ensure the application board is similar to the thermal test
condition, with the component soldered to a board with internal planes.
The thermal resistance is expressed as the sum of a junction-to-case thermal resistance plus a
case-to-ambient thermal resistance:
RJA = RJC + RCA
where:
RJA = junction-to-ambient thermal resistance (oC/W)
RJC = junction-to-case thermal resistance (oC/W)
RCA = case-to-ambient thermal resistance (oC/W)
RJC is device related and is not affected by other factors. The thermal environment can be controlled to
change the case-to-ambient thermal resistance, RCA. For example, change the air flow around the device,
add a heat sink, change the mounting arrangement on the printed circuit board, or change the thermal
dissipation on the printed circuit board surrounding the device. This description is most useful for
packages with heat sinks where 90% of the heat flow is through the case to heat sink to ambient.
For most packages, a better model is required.
A more accurate two-resistor thermal model can be constructed from the junction-to-board thermal
resistance and the junction-to-case thermal resistance. The junction-to-case thermal resistance describes
when using a heat sink or where a substantial amount of heat is dissipated from the top of the package. The
junction-to-board thermal resistance describes the thermal performance when most of the heat is
conducted to the printed circuit board. This model can be used to generate simple estimations and for
computational fluid dynamics (CFD) thermal models.
To determine the junction temperature of the device in the application on a prototype board, use the
thermal characterization parameter (JT) to determine the junction temperature by measuring the
temperature at the top center of the package case using the following equation:
TJ = TT + (JT  PD)
where:
TT = thermocouple temperature on top of the package (oC)
JT = thermal characterization parameter (oC/W)
PD = power dissipation in the package (W)
MPC5554 Microcontroller Data Sheet, Rev. 4
Freescale Semiconductor
7
Electrical Characteristics
The thermal characterization parameter is measured in compliance with the JESD51-2 specification using
a 40-gauge type T thermocouple epoxied to the top center of the package case. Position the thermocouple
so that the thermocouple junction rests on the package. Place a small amount of epoxy on the thermocouple
junction and approximately 1 mm of wire extending from the junction. Place the thermocouple wire flat
against the package case to avoid measurement errors caused by the cooling effects of the thermocouple
wire.
References:
Semiconductor Equipment and Materials International
3081 Zanker Rd.
San Jose, CA., 95134
(408) 943-6900
MIL-SPEC and EIA/JESD (JEDEC) specifications are available from Global Engineering Documents at
800-854-7179 or 303-397-7956.
JEDEC specifications are available on the web at http://www.jedec.org.
1. C.E. Triplett and B. Joiner, “An Experimental Characterization of a 272 PBGA Within an Automotive
Engine Controller Module,” Proceedings of SemiTherm, San Diego, 1998, pp. 47–54.
2. G. Kromann, S. Shidore, and S. Addison, “Thermal Modeling of a PBGA for Air-Cooled Applications,” Electronic Packaging and Production, pp. 53–58, March 1998.
3. B. Joiner and V. Adams, “Measurement and Simulation of Junction to Board Thermal Resistance and
Its Application in Thermal Modeling,” Proceedings of SemiTherm, San Diego, 1999, pp. 212–220.
3.3
Package
The MPC5554 is available in packaged form. Read the package options in Section 2, “Ordering
Information.” Refer to Section 4, “Mechanicals,” for pinouts and package drawings.
3.4
EMI (Electromagnetic Interference) Characteristics
Table 4. EMI Testing Specifications 1
Spec
Characteristic
Minimum
Typical
Maximum
Unit
0.15
—
1000
MHz
1
Scan range
2
Operating frequency
—
—
fMAX
MHz
3
VDD operating voltages
—
1.5
—
V
4
VDDSYN, VRC33, VDD33, VFLASH, VDDE operating voltages
—
3.3
—
V
5
VPP, VDDEH, VDDA operating voltages
—
5.0
—
V
2
6
Maximum amplitude
—
—
14
32 3
dBuV
7
Operating temperature
—
—
25
oC
1
EMI testing and I/O port waveforms per SAE J1752/3 issued 1995-03. Qualification testing was performed on the MPC5554
and applied to the MPC5500 family as generic EMI performance data.
2 Measured with the single-chip EMI program.
3 Measured with the expanded EMI program.
MPC5554 Microcontroller Data Sheet, Rev. 4
8
Freescale Semiconductor
Electrical Characteristics
3.5
ESD (Electromagnetic Static Discharge) Characteristics
Table 5. ESD Ratings 1, 2
Characteristic
Symbol
Value
Unit
2000
V
R1
1500

C
100
pF
ESD for human body model (HBM)
HBM circuit description
500 (all pins)
ESD for field induced charge model (FDCM)
V
750 (corner pins)
Number of pulses per pin:
Positive pulses (HBM)
Negative pulses (HBM)
—
—
1
1
—
—
Interval of pulses
—
1
second
1
2
All ESD testing conforms to CDF-AEC-Q100 Stress Test Qualification for Automotive Grade Integrated Circuits.
Device failure is defined as: ‘If after exposure to ESD pulses, the device does not meet the device specification requirements,
which includes the complete DC parametric and functional testing at room temperature and hot temperature.
3.6
Voltage Regulator Controller (VRC) and
Power-On Reset (POR) Electrical Specifications
The following table lists the VRC and POR electrical specifications:
Table 6. VRC and POR Electrical Specifications
Spec
1
Characteristic
3.3 V (VDDSYN) POR
3
RESET pin supply
(VDDEH6) POR 1, 2
1
Max.
Units
VPOR15
1.1
1.1
1.35
1.35
V
Asserted (ramp up)
Negated (ramp up)
Asserted (ramp down)
Negated (ramp down)
VPOR33
0.0
2.0
2.0
0.0
0.30
2.85
2.85
0.30
V
Negated (ramp up)
Asserted (ramp down)
VPOR5
2.0
2.0
2.85
2.85
V
VTRANS_START
1.0
2.0
V
When VRC allows the pass
transistor to completely turn on 3, 4
VTRANS_ON
2.0
2.85
V
When the voltage is greater than
the voltage at which the VRC keeps
the 1.5 V supply in regulation 5, 6
VVRC33REG
3.0
—
V
11.0
—
mA
11.0
—
mA
9.0
—
mA
7.5
—
mA
Before VRC allows the pass
transistor to start turning on
4
5
Min.
Negated (ramp up)
Asserted (ramp down)
1.5 V (VDD) POR 1
2
Symbol
VRC33 voltage
6
– 55o C7
7
o
Current can be sourced
–40 C
by VRCCTL at Tj:
25o
C
150o
IVRCCTL
C
8
MPC5554 Microcontroller Data Sheet, Rev. 4
Freescale Semiconductor
9
Electrical Characteristics
Table 6. VRC and POR Electrical Specifications (continued)
Spec
Characteristic
8
Voltage differential during power up such that:
VDD33 can lag VDDSYN or VDDEH6 before VDDSYN and VDDEH6 reach the
VPOR33 and VPOR5 minimums respectively.
9
Absolute value of slew rate on power supply pins
o
10
Required gain at Tj:
– 55 C
IDD  IVRCCTL (@ fsys = fMAX)6, 8, 9, 10
– 40o C
Symbol
Min.
Max.
Units
VDD33_LAG
—
1.0
V
—
—
50
V/ms
70
—
—
70
—
—
—
—
500
—
7
o
25 C
o
150 C
BETA11
11
85
11
105
1
The internal POR signals are VPOR15, VPOR33, and VPOR5. On power up, assert RESET before the internal POR negates.
RESET must remain asserted until the power supplies are within the operating conditions as specified in Table 9 DC Electrical
Specifications. On power down, assert RESET before any power supplies fall outside the operating conditions and until the
internal POR asserts.
2
VIL_S (Table 9, Spec15) is guaranteed to scale with VDDEH6 down to VPOR5.
3 Supply full operating current for the 1.5 V supply when the 3.3 V supply reaches this range.
4 It is possible to reach the current limit during ramp up—do not treat this event as short circuit current.
5 At peak current for device.
6 Requires compliance with Freescale’s recommended board requirements and transistor recommendations. Board signal
traces/routing from the VRCCTL package signal to the base of the external pass transistor and between the emitter of the pass
transistor to the VDD package signals must have a maximum of 100 nH inductance and minimal resistance
(less than 1 ). VRCCTL must have a nominal 1 F phase compensation capacitor to ground. VDD must have a 20 F (nominal)
bulk capacitor (greater than 4 F over all conditions, including lifetime). Place high-frequency bypass capacitors consisting of
eight 0.01 F, two 0.1 F, and one 1 F capacitors around the package on the VDD supply signals.
7 Only available on devices that support -55o C.
8 I
VRCCTL is measured at the following conditions: VDD = 1.35 V, VRC33 = 3.1 V, VVRCCTL = 2.2 V.
9 Refer to Table 1 for the maximum operating frequency.
10 Values are based on I
DD from high-use applications as explained in the IDD Electrical Specification.
11 BETA represents the worst-case external transistor. It is measured on a per-part basis and calculated as (I
DD  IVRCCTL).
3.7
Power-Up/Down Sequencing
Power sequencing between the 1.5 V power supply and VDDSYN or the RESET power supplies is required
if using an external 1.5 V power supply with VRC33 tied to ground (GND). To avoid power-sequencing,
VRC33 must be powered up within the specified operating range, even if the on-chip voltage regulator
controller is not used. Refer to Section 3.7.2, “Power-Up Sequence (VRC33 Grounded),” and
Section 3.7.3, “Power-Down Sequence (VRC33 Grounded).”
Power sequencing requires that VDD33 must reach a certain voltage where the values are read as ones
before the POR signal negates. Refer to Section 3.7.1, “Input Value of Pins During POR Dependent on
VDD33.”
Although power sequencing is not required between VRC33 and VDDSYN during power up, VRC33 must
not lead VDDSYN by more than 600 mV or lag by more than 100 mV for the VRC stage turn-on to operate
within specification. Higher spikes in the emitter current of the pass transistor occur if VRC33 leads or lags
VDDSYN by more than these amounts. The value of that higher spike in current depends on the board power
supply circuitry and the amount of board level capacitance.
MPC5554 Microcontroller Data Sheet, Rev. 4
10
Freescale Semiconductor
Electrical Characteristics
Furthermore, when all of the PORs negate, the system clock starts to toggle, adding another large increase
of the current consumed by VRC33. If VRC33 lags VDDSYN by more than 100 mV, the increase in current
consumed can drop VDD low enough to assert the 1.5 V POR again. Oscillations are possible when the
1.5 V POR asserts and stops the system clock, causing the voltage on VDD to rise until the 1.5 V POR
negates again. All oscillations stop when VRC33 is powered sufficiently.
When powering down, VRC33 and VDDSYN have no delta requirement to each other, because the bypass
capacitors internal and external to the device are already charged. When not powering up or down, no delta
between VRC33 and VDDSYN is required for the VRC to operate within specification.
There are no power up/down sequencing requirements to prevent issues such as latch-up, excessive current
spikes, and so on. Therefore, the state of the I/O pins during power up and power down varies depending
on which supplies are powered.
Table 7 gives the pin state for the sequence cases for all pins with pad type pad_fc (fast type).
Table 7. Pin Status for Fast Pads During the Power Sequence
VDDE
VDD33
VDD
POR
Pin Status for Fast Pad Output Driver
pad_fc (fast)
Low
—
—
Asserted
Low
VDDE
Low
Low
Asserted
High
VDDE
Low
VDD
Asserted
High
VDDE
VDD33
Low
Asserted
High impedance (Hi-Z)
VDDE
VDD33
VDD
Asserted
Hi-Z
VDDE
VDD33
VDD
Negated
Functional
Table 8 gives the pin state for the sequence cases for all pins with pad type pad_mh (medium type) and
pad_sh (slow type).
Table 8. Pin Status for Medium and Slow Pads During the Power Sequence
VDDEH
VDD
POR
Pin Status for Medium and Slow Pad Output Driver
pad_mh (medium) pad_sh (slow)
Low
—
Asserted
Low
VDDEH
Low
Asserted
High impedance (Hi-Z)
VDDEH
VDD
Asserted
Hi-Z
VDDEH
VDD
Negated
Functional
The values in Table 7 and Table 8 do not include the effect of the weak-pull devices on the output pins
during power up.
Before exiting the internal POR state, the voltage on the pins go to a high-impedance state until POR
negates. When the internal POR negates, the functional state of the signal during reset applies and the
weak-pull devices
(up or down) are enabled as defined in the device reference manual. If VDD is too low to correctly
propagate the logic signals, the weak-pull devices can pull the signals to VDDE and VDDEH.
MPC5554 Microcontroller Data Sheet, Rev. 4
Freescale Semiconductor
11
Electrical Characteristics
To avoid this condition, minimize the ramp time of the VDD supply to a time period less than the time
required to enable the external circuitry connected to the device outputs.
During initial power ramp-up, when Vstby is 0.6v or above. a typical current of 1-3mA and maximum of
4mA may be seen until VDD is applied. This current will not reoccur until Vstby is lowered below Vstby
min. specification.
Figure 2 shows an approximate interpolation of the ISTBY worst-case specification to estimate values at
different voltages and temperatures. The vertical lines shown at 25 C, 60 C, and 150 C in Figure 2 are
the actual IDD_STBY specifications (27d) listed in Table 9.
Figure 2. fISTBY Worst-case Specifications
MPC5554 Microcontroller Data Sheet, Rev. 4
12
Freescale Semiconductor
Electrical Characteristics
3.7.1
Input Value of Pins During POR Dependent on VDD33
When powering up the device, VDD33 must not lag the latest VDDSYN or RESET power pin (VDDEH6) by
more than the VDD33 lag specification listed in Table 6, spec 8. This avoids accidentally selecting the
bypass clock mode because the internal versions of PLLCFG[0:1] and RSTCFG are not powered and
therefore cannot read the default state when POR negates. VDD33 can lag VDDSYN or the RESET power
pin (VDDEH6), but cannot lag both by more than the VDD33 lag specification. This VDD33 lag specification
applies during power up only. VDD33 has no lead or lag requirements when powering down.
3.7.2
Power-Up Sequence (VRC33 Grounded)
The 1.5 V VDD power supply must rise to 1.35 V before the 3.3 V VDDSYN power supply and the RESET
power supply rises above 2.0 V. This ensures that digital logic in the PLL for the 1.5 V power supply does
not begin to operate below the specified operation range lower limit of 1.35 V. Because the internal 1.5 V
POR is disabled, the internal 3.3 V POR or the RESET power POR must hold the device in reset. Since
they can negate as low as 2.0 V, VDD must be within specification before the 3.3 V POR and the RESET
POR negate.
VDDSYN and RESET Power
VDD
2.0 V
1.35 V
VDD must reach 1.35 V before VDDSYN and the RESET power reach 2.0 V
Figure 3. Power-Up Sequence (VRC33 Grounded)
3.7.3
Power-Down Sequence (VRC33 Grounded)
The only requirement for the power-down sequence with VRC33 grounded is if VDD decreases to less than
its operating range, VDDSYN or the RESET power must decrease to less than 2.0 V before the VDD power
increases to its operating range. This ensures that the digital 1.5 V logic, which is reset only by an ORed
POR and can cause the 1.5 V supply to decrease less than its specification value, resets correctly. See
Table 6, footnote 1.
MPC5554 Microcontroller Data Sheet, Rev. 4
Freescale Semiconductor
13
Electrical Characteristics
3.8
DC Electrical Specifications
Table 9. DC Electrical Specifications (TA = TL to TH)
Spec
1
Characteristic
Core supply voltage (average DC RMS voltage)
1
Symbol
Min
Max.
Unit
VDD
1.35
1.65
V
VDDE
1.62
3.6
V
2
Input/output supply voltage (fast input/output)
3
Input/output supply voltage (slow and medium input/output)
VDDEH
3.0
5.25
V
4
3.3 V input/output buffer voltage
VDD33
3.0
3.6
V
5
Voltage regulator control input voltage
VRC33
3.0
3.6
V
VDDA
4.5
5.25
V
VPP
4.5
5.25
V
2
6
Analog supply voltage
8
Flash programming voltage 3
9
Flash read voltage
VFLASH
3.0
3.6
V
10
SRAM standby voltage 4
VSTBY
0.8
1.2
V
11
Clock synthesizer operating voltage
VDDSYN
3.0
3.6
V
12
Fast I/O input high voltage
VIH_F
0.65  VDDE
VDDE + 0.3
V
13
Fast I/O input low voltage
VIL_F
VSS – 0.3
0.35  VDDE
V
14
Medium and slow I/O input high voltage
VIH_S
0.65  VDDEH
VDDEH + 0.3
V
15
Medium and slow I/O input low voltage
VIL_S
VSS – 0.3
0.35  VDDEH
V
16
Fast input hysteresis
VHYS_F
0.1  VDDE
V
17
Medium and slow I/O input hysteresis
VHYS_S
0.1  VDDEH
V
18
Analog input voltage
VINDC
VSSA – 0.3
VDDA + 0.3
V
19
Fast output high voltage (IOH_F = –2.0 mA)
VOH_F
0.8  VDDE
—
V
20
Slow and medium output high voltage
IOH_S = –2.0 mA
IOH_S = –1.0 mA
VOH_S
0.80  VDDEH
0.85  VDDEH
—
V
21
Fast output low voltage (IOL_F = 2.0 mA)
VOL_F
—
0.2  VDDE
V
22
Slow and medium output low voltage
IOL_S = 2.0 mA
IOL_S = 1.0 mA
VOL_S
—
Load capacitance (fast I/O) 5
DSC (SIU_PCR[8:9]) = 0b00
= 0b01
= 0b10
= 0b11
CL
24
Input capacitance (digital pins)
25
26
23
V
0.20  VDDEH
0.15  VDDEH
—
—
—
—
10
20
30
50
pF
pF
pF
pF
CIN
—
7
pF
Input capacitance (analog pins)
CIN_A
—
10
pF
Input capacitance:
(Shared digital and analog pins AN[12]_MA[0]_SDS,
AN[13]_MA[1]_SDO, AN[14]_MA[2]_SDI, and AN[15]_FCK)
CIN_M
—
12
pF
MPC5554 Microcontroller Data Sheet, Rev. 4
14
Freescale Semiconductor
Electrical Characteristics
Table 9. DC Electrical Specifications (TA = TL to TH) (continued)
Spec
Characteristic
Symbol
Min
Max.
Unit
IDD
IDD
IDD
IDD
—
—
—
—
700
600
875
740
mA
mA
mA
mA
IDD
IDD
IDD
IDD
—
—
—
—
609
522
760
643
mA
mA
mA
mA
IDD
IDD
IDD
IDD
—
—
—
—
446
384
555
471
mA
mA
mA
mA
27d RAM standby current.10
IDD_STBY @ 25o C
VSTBY @ 0.8 V
VSTBY @ 1.0 V
VSTBY @ 1.2 V
IDD_STBY
IDD_STBY
IDD_STBY
—
—
—
20
30
50
A
A
A
IDD_STBY @ 60o C
VSTBY @ 0.8 V
VSTBY @ 1.0 V
VSTBY @ 1.2 V
IDD_STBY
IDD_STBY
IDD_STBY
—
—
—
70
100
200
A
A
A
IDD_STBY @ 150o C (Tj)
VSTBY @ 0.8 V
VSTBY @ 1.0 V
VSTBY @ 1.2 V
IDD_STBY
IDD_STBY
IDD_STBY
—
—
—
1200
1500
2000
A
A
A
VDD33 11
IDD_33
—
2 + (values
derived from
procedure of
footnote 11)
mA
VFLASH
IVFLASH
—
10
mA
VDDSYN
IDDSYN
—
15
mA
IDD_A
IREF
IPP
—
—
—
20.0
1.0
25.0
mA
mA
mA
27a Operating Current 1.5 V Supplies @ 132 MHz: 6
VDD (including VDDF max current) @1.65 V typical use 7, 8
VDD (including VDDF max current) @1.4 V typical use 7, 8
VDD (including VDDF max current) @1.65 V high use 8, 9
VDD (including VDDF max current) @1.4 V high use 8, 9
27b Operating Current 1.5 V Supplies @ 114 MHz: 6
VDD (including VDDF max current) @1.65 V typical use 7, 8
VDD (including VDDF max current) @1.4 V typical use 7, 8
VDD (including VDDF max current) @1.65 V high use 8, 9
VDD (including VDDF max current) @1.4 V high use 8, 9
27c Operating Current 1.5 V Supplies @ 82 MHz: 6
VDD (including VDDF max current) @1.65 V typical use 7, 8
VDD (including VDDF max current) @1.40 V typical use 7, 8
VDD (including VDDF max current) @1.65 V high use 8, 9
VDD (including VDDF max current) @1.40 V high use 8, 9
28
29
Operating current 3.3 V supplies @ fMAX MHz
Operating current 5.0 V supplies (12 MHz ADCLK):
VDDA (VDDA0 + VDDA1)
Analog reference supply current (VRH, VRL)
VPP
MPC5554 Microcontroller Data Sheet, Rev. 4
Freescale Semiconductor
15
Electrical Characteristics
Table 9. DC Electrical Specifications (TA = TL to TH) (continued)
Spec
30
31
Characteristic
Operating current VDDE supplies: 12
VDDEH1
VDDE2
VDDE3
VDDEH4
VDDE5
VDDEH6
VDDE7
VDDEH8
VDDEH9
I/O input leakage current 14
34
DC injection current (per pin)
Analog input current, channel off
15
35a Analog input current, shared analog / digital pins
(AN[12], AN[13], AN[14], AN[15])
1
Max.
Unit
IDD1
IDD2
IDD3
IDD4
IDD5
IDD6
IDD7
IDD8
IDD9
—
—
—
—
—
—
—
—
—
Refer to
footnote 12
mA
mA
mA
mA
mA
mA
mA
mA
mA
10
20
20
110
130
170
A
A
A
10
20
20
100
130
170
A
A
A
IACT_S
10
20
150
170
A
A
IINACT_D
–2.5
2.5
A
IIC
–2.0
2.0
mA
IINACT_A
–150
150
nA
IINACT_AD
–2.5
2.5
A
VSS – VSSA
–100
100
mV
VRL
VSSA – 0.1
VSSA + 0.1
V
VRL – VSSA
–100
100
mV
VRH
VDDA – 0.1
VDDA + 0.1
V
VRH – VRL
4.5
5.25
V
IACT_F
Slow and medium I/O weak pullup/down current 13
3.0–3.6 V
4.5–5.5 V
33
35
Min
Fast I/O weak pullup current 13
1.62–1.98 V
2.25–2.75 V
3.00–3.60 V
Fast I/O weak pulldown current 13
1.62–1.98 V
2.25–2.75 V
3.00–3.60 V
32
Symbol
36
VSS to VSSA differential voltage 16
37
Analog reference low voltage
38
VRL differential voltage
39
Analog reference high voltage
40
VREF differential voltage
41
VSSSYN to VSS differential voltage
VSSSYN – VSS
–50
50
mV
42
VRCVSS to VSS differential voltage
VRCVSS – VSS
–50
50
mV
43
VDDF to VDD differential voltage
VDDF – VDD
–100
100
mV
43a VRC33 to VDDSYN differential voltage
VRC33 – VDDSYN
–0.1
0.1 17
V
VIDIFF
–2.5
2.5
V
TA = (TL to TH)
TL
TH
C
—
—
50
V/ms
44
Analog input differential signal range (with common mode 2.5 V)
45
Operating temperature range, ambient (packaged)
46
Slew rate on power-supply pins
VDDE2 and VDDE3 are limited to 2.25–3.6 V only if SIU_ECCR[EBTS] = 0; VDDE2 and VDDE3 have a range of 1.6–3.6 V if
SIU_ECCR[EBTS] = 1.
MPC5554 Microcontroller Data Sheet, Rev. 4
16
Freescale Semiconductor
Electrical Characteristics
2
| VDDA0 – VDDA1 | must be < 0.1 V.
VPP can drop to 3.0 V during read operations.
4
If standby operation is not required, connect VSTBY to ground.
5
Applies to CLKOUT, external bus pins, and Nexus pins.
6 Maximum average RMS DC current.
7
Average current measured on automotive benchmark.
8
Peak currents can be higher on specialized code.
9
High use current measured while running optimized SPE assembly code with all code and data 100% locked in cache
(0% miss rate) with all channels of the eMIOS and eTPU running autonomously, plus the eDMA transferring data continuously from
SRAM to SRAM. Higher currents are possible if an “idle” loop that crosses cache lines is run from cache. Write code that avoids this
condition.
10
The current specification relates to average standby operation after SRAM has been loaded with data. For power up current see
Section 3.7, “Power-Up/Down Sequencing”, Figure 2.
11
Power requirements for the VDD33 supply depend on the frequency of operation, load of all I/O pins, and the voltages on the I/O
segments. Refer to Table 11 for values to calculate the power dissipation for a specific operation.
12 Power requirements for each I/O segment are dependent on the frequency of operation and load of the I/O pins on a particular I/O
segment, and the voltage of the I/O segment. Refer to Table 10 for values to calculate power dissipation for specific operation. The
total power consumption of an I/O segment is the sum of the individual power consumptions for each pin on the segment.
13 Absolute value of current, measured at V and V .
IL
IH
14 Weak pullup/down inactive. Measured at V
DDE = 3.6 V and VDDEH = 5.25 V. Applies to pad types: pad_fc, pad_sh, and pad_mh.
15 Maximum leakage occurs at maximum operating temperature. Leakage current decreases by approximately one-half for each 8 oC
to 12 oC, in the ambient temperature range of 50 oC to 125 oC. Applies to pad types: pad_a and pad_ae.
16 V
SSA refers to both VSSA0 and VSSA1. | VSSA0 – VSSA1 | must be < 0.1 V.
17 Up to 0.6 V during power up and power down.
3
MPC5554 Microcontroller Data Sheet, Rev. 4
Freescale Semiconductor
17
Electrical Characteristics
3.8.1
I/O Pad Current Specifications
The power consumption of an I/O segment depends on the usage of the pins on a particular segment. The
power consumption is the sum of all output pin currents for a segment. The output pin current can be
calculated from Table 10 based on the voltage, frequency, and load on the pin. Use linear scaling to
calculate pin currents for voltage, frequency, and load parameters that fall outside the values given in
Table 10.
Table 10. I/O Pad Average DC Current (TA = TL to TH)1
Frequency
(MHz)
Load2 (pF)
Voltage (V)
Drive Select /
Slew Rate
Control Setting
Current (mA)
25
50
5.25
11
8.0
10
50
5.25
01
3.2
2
50
5.25
00
0.7
4
2
200
5.25
00
2.4
5
50
50
5.25
11
17.3
Spec
Pad Type
Symbol
1
2
3
6
Slow
IDRV_SH
20
50
5.25
01
6.5
3.33
50
5.25
00
1.1
8
3.33
200
5.25
00
3.9
9
66
10
3.6
00
2.8
10
66
20
3.6
01
5.2
11
66
30
3.6
10
8.5
7
Medium
IDRV_MH
12
66
50
3.6
11
11.0
13
66
10
1.98
00
1.6
14
66
20
1.98
01
2.9
15
66
30
1.98
10
4.2
16
66
50
1.98
11
6.7
17
56
10
3.6
00
2.4
18
56
20
3.6
01
4.4
19
56
30
3.6
10
7.2
20
56
50
3.6
11
9.3
56
10
1.98
00
1.3
22
56
20
1.98
01
2.5
23
56
30
1.98
10
3.5
24
56
50
1.98
11
5.7
25
40
10
3.6
00
1.7
26
40
20
3.6
01
3.1
27
40
30
3.6
10
5.1
21
Fast
IDRV_FC
28
40
50
3.6
11
6.6
29
40
10
1.98
00
1.0
30
40
20
1.98
01
1.8
31
40
30
1.98
10
2.5
32
40
50
1.98
11
4.0
1
These values are estimates from simulation and are not tested. Currents apply to output pins only.
2
All loads are lumped.
MPC5554 Microcontroller Data Sheet, Rev. 4
18
Freescale Semiconductor
Electrical Characteristics
3.8.2
I/O Pad VDD33 Current Specifications
The power consumption of the VDD33 supply dependents on the usage of the pins on all I/O segments. The
power consumption is the sum of all input and output pin VDD33 currents for all I/O segments. The output
pin VDD33 current can be calculated from Table 11 based on the voltage, frequency, and load on all fast
(pad_fc) pins. The input pin VDD33 current can be calculated from Table 11 based on the voltage,
frequency, and load on all pad_sh and pad_mh pins. Use linear scaling to calculate pin currents for voltage,
frequency, and load parameters that fall outside the values given in Table 11.
Table 11. VDD33 Pad Average DC Current (TA = TL to TH) 1
Spec
Pad Type
Symbol
Frequency
(MHz)
Load 2
(pF)
VDD33
(V)
VDDE
(V)
Drive
Select
Current
(mA)
Inputs
1
Slow
I33_SH
66
0.5
3.6
5.5
NA
0.003
2
Medium
I33_MH
66
0.5
3.6
5.5
NA
0.003
3
66
10
3.6
3.6
00
0.35
4
66
20
3.6
3.6
01
0.53
5
66
30
3.6
3.6
10
0.62
6
66
50
3.6
3.6
11
0.79
7
66
10
3.6
1.98
00
0.35
8
66
20
3.6
1.98
01
0.44
9
66
30
3.6
1.98
10
0.53
10
66
50
3.6
1.98
11
0.70
11
56
10
3.6
3.6
00
0.30
12
56
20
3.6
3.6
01
0.45
13
56
30
3.6
3.6
10
0.52
Outputs
14
56
50
3.6
3.6
11
0.67
56
10
3.6
1.98
00
0.30
16
56
20
3.6
1.98
01
0.37
17
56
30
3.6
1.98
10
0.45
18
56
50
3.6
1.98
11
0.60
19
40
10
3.6
3.6
00
0.21
20
40
20
3.6
3.6
01
0.31
21
40
30
3.6
3.6
10
0.37
15
Fast
I33_FC
22
40
50
3.6
3.6
11
0.48
23
40
10
3.6
1.98
00
0.21
24
40
20
3.6
1.98
01
0.27
25
40
30
3.6
1.98
10
0.32
26
40
50
3.6
1.98
11
0.42
1
These values are estimated from simulation and not tested. Currents apply to output pins for the fast pads only and to input
pins for the slow and medium pads only.
2
All loads are lumped.
MPC5554 Microcontroller Data Sheet, Rev. 4
Freescale Semiconductor
19
Electrical Characteristics
3.9
Oscillator and FMPLL Electrical Characteristics
Table 12. FMPLL Electrical Specifications
(VDDSYN = 3.0–3.6 V; VSS = VSSSYN = 0.0 V; TA = TL to TH)
Spec
Characteristic
Symbol
Minimum
Maximum
1
PLL reference frequency range: 1
Crystal reference
External reference
Dual controller (1:1 mode)
fref_crystal
fref_ext
fref_1:1
8
8
24
20
20
fsys  2
2
System frequency 2
fsys
fICO(MIN)  2RFD
fMAX 3
MHz
3
System clock period
tCYC
—
1  fsys
ns
4
Loss of reference frequency 4
fLOR
100
1000
kHz
5
Self-clocked mode (SCM) frequency 5
fSCM
7.4
17.5
MHz
EXTAL input high voltage crystal mode 6
VIHEXT
VXTAL + 0.4 V
—
V
All other modes
[dual controller (1:1), bypass, external reference]
VIHEXT
(VDDE5  2) + 0.4 V
—
V
EXTAL input low voltage crystal mode 7
VILEXT
—
VXTAL – 0.4 V
V
All other modes
[dual controller (1:1), bypass, external reference]
VILEXT
—
(VDDE5 2) – 0.4 V
V
IXTAL
0.8
3
mA
6
7
Unit
MHz
8
XTAL current 8
9
Total on-chip stray capacitance on XTAL
CS_XTAL
—
1.5
pF
10
Total on-chip stray capacitance on EXTAL
CS_EXTAL
—
1.5
pF
11
Crystal manufacturer’s recommended capacitive
load
CL
Refer to crystal
specification
Refer to crystal
specification
pF
Discrete load capacitance to connect to EXTAL
CL_EXTAL
—
(2  CL) – CS_EXTAL
– CPCB_EXTAL 9
pF
Discrete load capacitance to connect to XTAL
CL_XTAL
—
(2  CL) – CS_XTAL
– CPCB_XTAL 9
pF
tlpll
—
750
s
tskew
–2
2
ns
12
13
14
PLL lock time 10
15
Dual controller (1:1) clock skew
(between CLKOUT and EXTAL) 11, 12
16
Duty cycle of reference
tDC
40
60
%
17
Frequency unLOCK range
fUL
–4.0
4.0
% fSYS
18
Frequency LOCK range
fLCK
–2.0
2.0
% fSYS
MPC5554 Microcontroller Data Sheet, Rev. 4
20
Freescale Semiconductor
Electrical Characteristics
Table 12. FMPLL Electrical Specifications (continued)
(VDDSYN = 3.0–3.6 V; VSS = VSSSYN = 0.0 V; TA = TL to TH)
Spec
Characteristic
Symbol
Minimum
Maximum
CJITTER
19
CLKOUT period jitter, measured at fSYS max: 13, 14
Peak-to-peak jitter (clock edge to clock edge)
Long term jitter (averaged over a 2 ms interval)
20
Frequency modulation range limit 15
(do not exceed fsys maximum)
21
ICO frequency
fico = [fref_crystal  (MFD + 4)] (PREDIV + 1) 16
fico = [fref_ext  (MFD + 4) ] (PREDIV + 1)
22
Predivider output frequency (to PLL)
Unit
—
—
5.0
0.01
CMOD
0.8
2.4
%fSYS
fico
48
fMAX
MHz
fPREDIV
4
20 17
MHz
%
fCLKOUT
1
Nominal crystal and external reference values are worst-case not more than 1%. The device operates correctly if the frequency
remains within ± 5% of the specification limit. This tolerance range allows for a slight frequency drift of the crystals over time.
The designer must thoroughly understand the drift margin of the source clock.
2 All internal registers retain data at 0 Hz.
3 Up to the maximum frequency rating of the device (refer to Table 1).
4 Loss of reference frequency is defined as the reference frequency detected internally, which transitions the PLL into self-clocked
mode.
5 The PLL operates at self-clocked mode (SCM) frequency when the reference frequency falls below f
LOR. SCM frequency is
measured on the CLKOUT ball with the divider set to divide-by-two of the system clock.
NOTE: In SCM, the MFD and PREDIV have no effect and the RFD is bypassed.
6 Use the EXTAL input high voltage parameter when using the FlexCAN oscillator in crystal mode (no quartz crystals or
resonators). (Vextal – Vxtal) must be  400 mV for the oscillator’s comparator to produce the output clock.
7 Use the EXTAL input low voltage parameter when using the FlexCAN oscillator in crystal mode (no quartz crystals or
resonators). (Vxtal – Vextal) must be  400 mV for the oscillator’s comparator to produce the output clock.
8 I
xtal is the oscillator bias current out of the XTAL pin with both EXTAL and XTAL pins grounded.
9 C
PCB_EXTAL and CPCB_XTAL are the measured PCB stray capacitances on EXTAL and XTAL, respectively.
10 This specification applies to the period required for the PLL to relock after changing the MFD frequency control bits in the
synthesizer control register (SYNCR). From power up with crystal oscillator reference, the lock time also includes the crystal
startup time.
11 PLL is operating in 1:1 PLL mode.
12 V
DDE = 3.0–3.6 V.
13 Jitter is the average deviation from the programmed frequency measured over the specified interval at maximum f .
sys
Measurements are made with the device powered by filtered supplies and clocked by a stable external clock signal. Noise
injected into the PLL circuitry via VDDSYN and VSSSYN and variation in crystal oscillator frequency increase the jitter percentage
for a given interval. CLKOUT divider is set to divide-by-two.
14 Values are with frequency modulation disabled. If frequency modulation is enabled, jitter is the sum of (jitter + Cmod).
15 Modulation depth selected must not result in f
sys value greater than the fsys maximum specified value.
RFD).
sys = fico  (2
16 f
17
Maximum value for dual controller (1:1) mode is (fMAX 2) with the predivider set to 1 (FMPLL_SYNCR[PREDIV] = 0b001).
MPC5554 Microcontroller Data Sheet, Rev. 4
Freescale Semiconductor
21
Electrical Characteristics
3.10
eQADC Electrical Characteristics
Table 13. eQADC Conversion Specifications (TA = TL to TH)
Spec
Characteristic
Symbol
Minimum
Maximum
Unit
FADCLK
1
12
MHz
13 + 2 (15)
14 + 2 (16)
13 + 128 (141)
14 + 128 (142)
1
ADC clock (ADCLK) frequency 1
Conversion cycles
Differential
Single ended
CC
2
3
Stop mode recovery time 2
TSR
10
—
s
—
1.25
—
mV
3
ADCLK
cycles
4
Resolution
5
INL: 6 MHz ADC clock
INL6
–4
4
Counts 3
6
INL: 12 MHz ADC clock
INL12
–8
7
8
9
10
DNL: 6 MHz ADC clock
DNL: 12 MHz ADC clock
Offset error with calibration
Full-scale gain error with calibration
7, 8, 9, 10
8
Counts
DNL6
–3
4
34
Counts
DNL12
–6 4
6
4
Counts
OFFWC
–4 5
4
5
Counts
GAINWC
–8 6
8
6
Counts
IINJ
–1
1
mA
11
Disruptive input injection current
12
Incremental error due to injection current. All channels are
10 k < Rs <100 k
Channel under test has Rs = 10 k,
IINJ = IINJMAX, IINJMIN
EINJ
–4
4
Counts
13
Total unadjusted error (TUE) for single ended conversions
with calibration 11, 12, 13, 14, 15
TUE
–4
4
Counts
1
Conversion characteristics vary with FADCLK rate. Reduced conversion accuracy occurs at maximum FADCLK rate. The
maximum value is based on 800 KS/s and the minimum value is based on 20 MHz oscillator clock frequency divided by a
maximum 16 factor.
2
Stop mode recovery time begins when the ADC control register enable bits are set until the ADC is ready to perform
conversions.
3 At V
RH – VRL = 5.12 V, one least significant bit (LSB) = 1.25, mV = one count.
4
Guaranteed 10-bit mono tonicity.
5 The absolute value of the offset error without calibration  100 counts.
6 The absolute value of the full scale gain error without calibration  120 counts.
7 Below disruptive current conditions, the channel being stressed has conversion values of: 0x3FF for analog inputs greater than
VRH, and 0x000 for values less than VRL. This assumes that VRH  VDDA and VRL  VSSA due to the presence of the sample
amplifier. Other channels are not affected by non-disruptive conditions.
8 Exceeding the limit can cause a conversion error on both stressed and unstressed channels. Transitions within the limit do not
affect device reliability or cause permanent damage.
9 Input must be current limited to the value specified. To determine the value of the required current-limiting resistor, calculate
resistance values using VPOSCLAMP = VDDA + 0.5 V and VNEGCLAMP = – 0.3 V, then use the larger of the calculated values.
10 This condition applies to two adjacent pads on the internal pad.
11 The TUE specification is always less than the sum of the INL, DNL, offset, and gain errors due to canceling errors.
12
TUE does not apply to differential conversions.
13 Measured at 6 MHz ADC clock. TUE with a 12 MHz ADC clock is: –16 counts < TUE < 16 counts.
14 TUE includes all internal device errors such as internal reference variation (75% Ref, 25% Ref).
15
Depending on the input impedance, the analog input leakage current (Table 9. DC Electrical Specifications, spec 35a) can
affect the actual TUE measured on analog channels AN[12], AN[13], AN[14], AN[15].
MPC5554 Microcontroller Data Sheet, Rev. 4
22
Freescale Semiconductor
Electrical Characteristics
3.11
H7Fa Flash Memory Electrical Characteristics
Table 14. Flash Program and Erase Specifications (TA = TL to TH)
Spec
3
1
2
3
4
5
6
Flash Program Characteristic
Doubleword (64 bits) program time 4
Symbol
Min.
Typical 1
Initial
Max. 2
Max. 3
Unit
Tdwprogram
—
10
—
500
s
500
s
4
Page program time
4
5
Tpprogram
—
22
44
7
16 KB block pre-program and erase time
T16kpperase
—
265
400
5000
ms
9
48 KB block pre-program and erase time
T48kpperase
—
345
400
5000
ms
10
64 KB block pre-program and erase time
T64kpperase
—
415
500
5000
ms
8
128 KB block pre-program and erase time
T128kpperase
—
500
1250
7500
ms
11
Minimum operating frequency for program and erase
operations 6
—
25
—
—
—
MHz
Typical program and erase times are calculated at 25 oC operating temperature using nominal supply values.
Initial factory condition: 100program/erase cycles, 25 oC, using a typical supply voltage measured at a minimum system
frequency of 80 MHz.
The maximum erase time occurs after the specified number of program/erase cycles. This maximum value is characterized
but not guaranteed.
Actual hardware programming times. This does not include software overhead.
Page size is 256 bits (8 words).
The read frequency of the flash can range up to the maximum operating frequency. There is no minimum read frequency
condition.
Table 15. Flash EEPROM Module Life (TA = TL to TH)
Spec
1
Characteristic
Symbol
Min.
Typical 1
Unit
1a
Number of program/erase cycles per block for 16 KB, 48 KB, and
64 KB blocks over the operating temperature range (TJ)
P/E
100,000
—
cycles
1b
Number of program/erase cycles per block for 128 KB blocks over the
operating temperature range (TJ)
P/E
1000
100,000
cycles
2
Data retention
Blocks with 0–1,000 P/E cycles
Blocks with 1,001–100,000 P/E cycles
20
5
—
—
years
Retention
Typical endurance is evaluated at 25o C. Product qualification is performed to the minimum specification. For additional
information on the Freescale definition of typical endurance, refer to engineering bulletin EB619 Typical Endurance for
Nonvolatile Memory.
MPC5554 Microcontroller Data Sheet, Rev. 4
Freescale Semiconductor
23
Electrical Characteristics
Table 16 shows the FLASH_BIU settings versus frequency of operation. Refer to the device reference
manual for definitions of these bit fields.
Table 16. FLASH_BIU Settings vs. Frequency of Operation 1
Maximum Frequency (MHz)
DPFEN 2
IPFEN 2
PFLIM 3
BFEN 4
0b01
0b00
0b01
0b11
0b00
0b01
0b11
0b000
to
0b110
0b0
0b1
0b010
0b01
0b00
0b01
0b11
0b00
0b01
0b11
0b000
to
0b110
0b0
0b1
0b010
0b011
0b01
0b00
0b01
0b11
0b00
0b01
0b11
0b000
to
0b110
0b0
0b1
0b111
0b111
0b11
0b00
0b00
0b000
0b0
APC
RWSC
WWSC
Up to and including 82 MHz 5
0b001
0b001
Up to and including 102 MHz 6
0b001
Up to and including 132 MHz 7
Default setting after reset
1
2
3
4
5
6
7
Illegal combinations exist. Use entries from the same row in this table.
For maximum flash performance, set to 0b11.
For maximum flash performance, set to 0b110.
For maximum flash performance, set to 0b1.
82 MHz parts allow for 80 MHz system clock + 2% frequency modulation (FM).
102 MHz parts allow for 100 MHz system clock + 2% FM.
132 MHz parts allow for 128 MHz system clock + 2% FM.
3.12
3.12.1
AC Specifications
Pad AC Specifications
Table 17. Pad AC Specifications (VDDEH = 5.0 V, VDDE = 1.8 V) 1
Spec
SRC / DSC
(binary)
Pad
11
1
01
Slow high voltage (SH)
00
11
2
Medium high voltage (MH)
01
00
Out Delay 2, 3, 4
(ns)
Rise / Fall 4, 5
(ns)
Load Drive
(pF)
26
15
50
82
60
200
75
40
50
137
80
200
377
200
50
476
260
200
16
8
50
43
30
200
34
15
50
61
35
200
192
100
50
239
125
200
MPC5554 Microcontroller Data Sheet, Rev. 4
24
Freescale Semiconductor
Electrical Characteristics
Table 17. Pad AC Specifications (VDDEH = 5.0 V, VDDE = 1.8 V) 1 (continued)
Spec
Out Delay 2, 3, 4
(ns)
SRC / DSC
(binary)
Pad
Rise / Fall 4, 5
(ns)
Load Drive
(pF)
2.7
10
2.5
20
2.4
30
2.3
50
00
3
01
Fast
3.1
10
11
1
2
3
4
5
4
Pullup/down (3.6 V max)
—
—
7500
50
5
Pullup/down (5.5 V max)
—
—
9000
50
These are worst-case values that are estimated from simulation (not tested). The values in the table are simulated at:
VDD = 1.35–1.65 V; VDDE = 1.62–1.98 V; VDDEH = 4.5–5.25 V; VDD33 and VDDSYN = 3.0–3.6 V; and TA = TL to TH.
This parameter is supplied for reference and is guaranteed by design (not tested).
The output delay is shown in Figure 4. To calculate the output delay with respect to the system clock,
add a maximum of one system clock to the output delay.
The output delay and rise and fall are measured to 20% or 80% of the respective signal.
This parameter is guaranteed by characterization rather than 100% tested.
Table 18. Derated Pad AC Specifications (VDDEH = 3.3 V, VDDE = 3.3 V) 1
Spec
SRC/DSC
(binary)
Pad
11
1
Slow high voltage (SH)
01
00
11
2
Medium high voltage (MH)
01
00
Out Delay 2, 3, 4
(ns)
Rise / Fall 3, 5
(ns)
Load Drive
(pF)
39
23
50
120
87
200
101
52
50
188
111
200
507
248
50
597
312
200
23
12
50
64
44
200
50
22
50
90
50
200
261
123
50
305
156
200
2.4
10
2.2
20
2.1
30
2.1
50
00
3
01
Fast
10
3.2
11
4
Pullup/down (3.6 V max)
—
—
7500
50
5
Pullup/down (5.5 V max)
—
—
9500
50
1
These are worst-case values that are estimated from simulation (not tested). The values in the table are simulated at:
VDD = 1.35–1.65 V; VDDE = 3.0–3.6 V; VDDEH = 3.0–3.6 V; VDD33 and VDDSYN = 3.0–3.6 V; and TA = TL to TH.
2 This parameter is supplied for reference and guaranteed by design (not tested).
MPC5554 Microcontroller Data Sheet, Rev. 4
Freescale Semiconductor
25
Electrical Characteristics
3
The output delay, and the rise and fall, are calculated to 20% or 80% of the respective signal.
The output delay is shown in Figure 4. To calculate the output delay with respect to the system clock, add a maximum of one
system clock to the output delay.
5
This parameter is guaranteed by characterization rather than 100% tested.
4
VDD 2
Pad
internal data
input signal
Rising-edge
out delay
Falling-edge
out delay
VOH
Pad
output
VOL
Figure 4. Pad Output Delay
3.13
AC Timing
3.13.1
Reset and Configuration Pin Timing
Table 19. Reset and Configuration Pin Timing 1
Spec
1
Characteristic
Symbol
Min.
Max.
Unit
1
RESET pulse width
tRPW
10
—
tCYC
2
RESET glitch detect pulse width
tGPW
2
—
tCYC
3
PLLCFG, BOOTCFG, WKPCFG, RSTCFG setup time to RSTOUT valid
tRCSU
10
—
tCYC
4
PLLCFG, BOOTCFG, WKPCFG, RSTCFG hold time from RSTOUT valid
tRCH
0
—
tCYC
Reset timing specified at: VDDEH = 3.0–5.25 V and TA = TL to TH.
MPC5554 Microcontroller Data Sheet, Rev. 4
26
Freescale Semiconductor
Electrical Characteristics
2
RESET
1
RSTOUT
3
PLLCFG
BOOTCFG
RSTCFG
WKPCFG
4
Figure 5. Reset and Configuration Pin Timing
3.13.2
IEEE 1149.1 Interface Timing
Table 20. JTAG Pin AC Electrical Characteristics 1
Spec
1
Characteristic
Symbol
Min.
Max.
Unit
1
TCK cycle time
tJCYC
100
—
ns
2
TCK clock pulse width (measured at VDDE  2)
tJDC
40
60
ns
3
TCK rise and fall times (40% to 70%)
tTCKRISE
—
3
ns
4
TMS, TDI data setup time
tTMSS, tTDIS
5
—
ns
5
TMS, TDI data hold time
tTMSH, tTDIH
25
—
ns
6
TCK low to TDO data valid
tTDOV
—
20
ns
7
TCK low to TDO data invalid
tTDOI
0
—
ns
8
TCK low to TDO high impedance
tTDOHZ
—
20
ns
9
JCOMP assertion time
tJCMPPW
100
—
ns
10
JCOMP setup time to TCK low
tJCMPS
40
—
ns
11
TCK falling-edge to output valid
tBSDV
—
50
ns
12
TCK falling-edge to output valid out of high impedance
tBSDVZ
—
50
ns
13
TCK falling-edge to output high impedance (Hi-Z)
tBSDHZ
—
50
ns
14
Boundary scan input valid to TCK rising-edge
tBSDST
50
—
ns
15
TCK rising-edge to boundary scan input invalid
tBSDHT
50
—
ns
These specifications apply to JTAG boundary scan only. JTAG timing specified at: VDDE = 3.0–3.6 V and TA = TL to TH.
Refer to Table 21 for Nexus specifications.
MPC5554 Microcontroller Data Sheet, Rev. 4
Freescale Semiconductor
27
Electrical Characteristics
TCK
2
3
2
1
3
Figure 6. JTAG Test Clock Input Timing
TCK
4
5
TMS, TDI
6
7
8
TDO
Figure 7. JTAG Test Access Port Timing
MPC5554 Microcontroller Data Sheet, Rev. 4
28
Freescale Semiconductor
Electrical Characteristics
TCK
10
JCOMP
9
Figure 8. JTAG JCOMP Timing
MPC5554 Microcontroller Data Sheet, Rev. 4
Freescale Semiconductor
29
Electrical Characteristics
TCK
11
13
Output
signals
12
Output
signals
14
15
Input
signals
Figure 9. JTAG Boundary Scan Timing
MPC5554 Microcontroller Data Sheet, Rev. 4
30
Freescale Semiconductor
Electrical Characteristics
3.13.3
Nexus Timing
Table 21. Nexus Debug Port Timing 1
Spec
Characteristic
1
MCKO cycle time
2
MCKO duty cycle
3
4
MCKO low to MDO data valid
3
MCKO low to MSEO data valid
3
3
Symbol
Min.
Max.
Unit
tMCYC
22
8
tCYC
tMDC
40
60
%
tMDOV
–1.5
3.0
ns
tMSEOV
–1.5
3.0
ns
tEVTOV
–1.5
3.0
ns
5
MCKO low to EVTO data valid
6
EVTI pulse width
tEVTIPW
4.0
—
tTCYC
7
EVTO pulse width
tEVTOPW
1
4
9
TCK duty cycle
tTDC
40
60
%
10
TDI, TMS data setup time
tNTDIS, tNTMSS
8
—
ns
11
TDI, TMS data hold time
tNTDIH, tNTMSH
5
—
ns
0
12
ns
0
10
ns
—
—
—
13
3
5
tCYC
tTCYC
tJOV
VDDE = 2.25–3.0 V
VDDE = 3.0–3.6 V
4
—
TCK cycle time
12
2
tMCYC
8
TCK low to TDO data valid
1
—
4
RDY valid to MCKO
5
—
JTAG specifications apply when used for debug functionality. All Nexus timing relative to MCKO is measured from 50% of
MCKO and 50% of the respective signal. Nexus timing specified at VDD = 1.35–1.65 V, VDDE = 2.25–3.6 V,
VDD33 and VDDSYN = 3.0–3.6 V, TA = TL to TH, and CL = 30 pF with DSC = 0b10.
The Nexus AUX port runs up to 82 MHz.
MDO, MSEO, and EVTO data is held valid until the next MCKO low cycle occurs.
Limit the maximum frequency to approximately 16 MHz (VDDE = 2.25–3.0 V) or 20 MHz (VDDE = 3.0–3.6 V) to meet the timing
specification for tJOV of [0.2 x tJCYC] as outlined in the IEEE-ISTO 5001-2003 specification.
The RDY pin timing is asynchronous to MCKO and is guaranteed by design to function correctly.
1
2
MCKO
4
3
5
MDO
MSEO
EVTO
Output Data Valid
Figure 10. Nexus Output Timing
MPC5554 Microcontroller Data Sheet, Rev. 4
Freescale Semiconductor
31
Electrical Characteristics
TCK
10
11
TMS, TDI
12
TDO
Figure 11. Nexus TDI, TMS, TDO Timing
MPC5554 Microcontroller Data Sheet, Rev. 4
32
Freescale Semiconductor
Electrical Characteristics
3.13.4
External Bus Interface (EBI) Timing
Table 22 lists the timing information for the external bus interface (EBI).
Table 22. Bus Operation Timing1
Spec
Characteristic
and
Description
1
CLKOUT period
2
CLKOUT duty cycle
3
4
CLKOUT rise time
CLKOUT fall time
CLKOUT positive edge to output
signal invalid or Hi-Z (hold time)
External Bus Frequency 2, 3
Symbol
40 MHz
56 MHz
Notes
Signals are measured
at 50% VDDE.
Max.
Min.
Max.
Min.
Max.
TC
24.4
—
17.5
—
15.2
—
ns
tCDC
45%
55%
45%
55%
45%
55%
TC
tCRT
4
—
—
tCFT
—
—4
tCOH
1.010
4
—
—
—
—4
1.010
—
—
—
4
ns
—
—4
ns
—
ns
1.010
—
EBTS = 0
1.5
1.5
EBTS = 1
External bus interface
BG 5
BR 6
BB
CS[0:3]
ADDR[8:31]
DATA[0:31] 7
BDIP
OE
RD_WR
TA
TEA 8
TS
TSIZ[0:1]
WE/BE[0:3] 9
CLKOUT positive edge to output
signal valid (output delay)
Hold time selectable
via SIU_ECCR
[EBTS] bit.
10.010
tCOV
7.510
—
—
11.0
6
Unit
Min.
1.5
5
66 MHz
6.010
—
8.5
External bus interface
BG 5
BR 6
BB
CS[0:3]
ADDR[8:31]
DATA[0:31] 7
BDIP
OE
RD_WR
TA
TEA 8
TS
TSIZ[0:1]
WE/BE[0:3] 9
EBTS = 0
ns
7.0
EBTS = 1
Output valid time
selectable via
SIU_ECCR
[EBTS] bit.
MPC5554 Microcontroller Data Sheet, Rev. 4
Freescale Semiconductor
33
Electrical Characteristics
Table 22. Bus Operation Timing1 (continued)
Spec
Characteristic
and
Description
External Bus Frequency 2, 3
Symbol
40 MHz
56 MHz
66 MHz
Unit
Min.
Max.
Min.
Max.
Min.
Max.
tCIS
10.0
—
7.0
—
5.0
—
ns
tCIH
1.0
—
1.0
—
1.0
—
ns
Notes
Input signal valid to CLKOUT
positive edge (setup time)
7
External bus interface
ADDR[8:31]
DATA[0:31] 7
BG 6
BR 5
BB
RD_WR
TA
TEA 8
TS
CLKOUT positive edge to input
signal invalid (hold time)
8
External bus interface
ADDR[8:31]
DATA[0:31] 7
BG 6
BR 5
BB
RD_WR
TA
TEA 8
TS
1
EBI timing specified at: VDDE = 1.6–3.6 V (unless stated otherwise); TA = TL to TH; and CL = 30 pF with DSC = 0b10.
Speed is the nominal maximum frequency. Max. speed is the maximum speed allowed including frequency modulation (FM).
82 MHz parts allow for 80 MHz system clock + 2% FM; 114 MHz parts allow for 112 MHz system clock + 2% FM; and
132 MHz parts allow for 128 MHz system clock + 2% FM.
3 The external bus is limited to half the speed of the internal bus.
4 Refer to fast pad timing in Table 17 and Table 18 (different values for 1.8 V and 3.3 V).
5 Internal arbitration.
6 External arbitration.
7 Due to pin limitations, the DATA[16:31] signals are not available on the 324 package.
8 Due to pin limitations, the TEA signal is not available on the 324 package.
9
Due to pin limitations, the WE/BE[2:3] signals are not available on the 324 package.
10
SIU_ECCR[EBTS] = 0 timings are tested and valid at VDDE = 2.25–3.6 V only; SIU_ECCR[EBTS] = 1 timings are tested and
valid at VDDE = 1.6–3.6 V.
2
MPC5554 Microcontroller Data Sheet, Rev. 4
34
Freescale Semiconductor
Electrical Characteristics
Voh_f
VDDE 2
CLKOUT
Vol_f
2
3
2
4
1
Figure 12. CLKOUT Timing
VDDE 2
CLKOUT
6
5
VDDE 2
5
Output
bus
VDDE 2
6
5
5
Output
signal
VDDE 2
6
Output
signal
VDDE 2
Figure 13. Synchronous Output Timing
MPC5554 Microcontroller Data Sheet, Rev. 4
Freescale Semiconductor
35
Electrical Characteristics
CLKOUT
VDDE 2
7
8
Input
bus
VDDE 2
7
8
Input
signal
VDDE 2
Figure 14. Synchronous Input Timing
3.13.5
External Interrupt Timing (IRQ Signals)
Table 23. External Interrupt Timing 1
Spec
1
2
Characteristic
Symbol
Min.
Max.
Unit
1
IRQ pulse-width low
tIPWL
3
—
tCYC
2
IRQ pulse-width high
TIPWH
3
—
tCYC
3
IRQ edge-to-edge time 2
tICYC
6
—
tCYC
IRQ timing specified at: VDDEH = 3.0–5.25 V and TA = TL to TH.
Applies when IRQ signals are configured for rising-edge or falling-edge events, but not both.
MPC5554 Microcontroller Data Sheet, Rev. 4
36
Freescale Semiconductor
Electrical Characteristics
IRQ
2
1
3
Figure 15. External Interrupt Timing
3.13.6
eTPU Timing
Table 24. eTPU Timing 1
Spec
1
2
1
2
Characteristic
eTPU input channel pulse width
eTPU output channel pulse width
Symbol
Min.
Max
Unit
tICPW
4
—
tCYC
—
tCYC
tOCPW
2
2
eTPU timing specified at: VDDEH = 3.0–5.25 V and TA = TL to TH.
This specification does not include the rise and fall times. When calculating the minimum eTPU pulse width, include the rise
and fall times defined in the slew rate control fields (SRC) of the pad configuration registers (PCR).
2
eTPU
output
eTPU input
and TCRCLK
1
Figure 16. eTPU Timing
MPC5554 Microcontroller Data Sheet, Rev. 4
Freescale Semiconductor
37
Electrical Characteristics
3.13.7
eMIOS Timing
Table 25. eMIOS Timing 1
Spec
Characteristic
1
2
Min.
Max.
Unit
tMIPW
4
—
tCYC
—
tCYC
eMIOS input pulse width
2
1
Symbol
eMIOS output pulse width
tMOPW
1
2
eMIOS timing specified at: VDDEH = 3.0–5.25 V and TA = TL to TH.
This specification does not include the rise and fall times. When calculating the minimum eMIOS pulse width, include the rise
and fall times defined in the slew rate control field (SRC) in the pad configuration register (PCR).
2
eMIOS
output
eMIOS input
1
Figure 17. eMIOS Timing
3.13.8
DSPI Timing
Table 26. DSPI Timing1’ 2
80 MHz
Characteristic
Spec
1
2
3
SCK cycle time3, 4
PCS to SCK
After SCK
112 MHz
132 MHz
Symbol
delay5
delay6
Unit
Min.
Max.
Min.
Max.
Min.
Max.
tSCK
24.4 ns
2.9 ms
17.5 ns
2.1 ms
15.2 ns
1.7 ms
—
tCSC
23
—
15
—
13
—
ns
14
—
12
—
ns
tASC
22
—
tSDC
(tSCK  2)
– 2 ns
(tSCK  2)
+ 2 ns
tA
—
25
—
25
—
25
ns
tDIS
—
25
—
25
—
25
ns
(tSCK  2) (tSCK  2) (tSCK  2) (tSCK  2)
– 2 ns
+ 2 ns
– 2 ns
+ 2 ns
4
SCK duty cycle
5
Slave access time
(SS active to SOUT driven)
6
Slave SOUT disable time
(SS inactive to SOUT Hi-Z, or invalid)
7
PCSx to PCSS time
tPCSC
4
—
4
—
4
—
ns
8
PCSS to PCSx time
tPASC
5
—
5
—
5
—
ns
ns
MPC5554 Microcontroller Data Sheet, Rev. 4
38
Freescale Semiconductor
Electrical Characteristics
Table 26. DSPI Timing1’ 2 (continued)
80 MHz
Spec
1
2
3
4
5
6
7
Characteristic
112 MHz
132 MHz
Symbol
tSUI
9
Data setup time for inputs
Master (MTFE = 0)
Slave
Master (MTFE = 1, CPHA = 0)7
Master (MTFE = 1, CPHA = 1)
tHI
10
Data hold time for inputs
Master (MTFE = 0)
Slave
Master (MTFE = 1, CPHA = 0)7
Master (MTFE = 1, CPHA = 1)
tSUO
11
Data valid (after SCK edge)
Master (MTFE = 0)
Slave
Master (MTFE = 1, CPHA = 0)
Master (MTFE = 1, CPHA = 1)
tHO
12
Data hold time for outputs
Master (MTFE = 0)
Slave
Master (MTFE = 1, CPHA = 0)
Master (MTFE = 1, CPHA = 1)
Unit
Min.
Max.
Min.
Max.
Min.
Max.
20
2
–4
20
—
—
—
—
20
2
3
20
—
—
—
—
20
2
6
20
—
—
—
—
ns
ns
ns
ns
–4
7
21
–4
—
—
—
—
–4
7
14
–4
—
—
—
—
–4
7
12
–4
—
—
—
—
ns
ns
ns
ns
—
—
—
—
5
25
18
5
—
—
—
—
5
25
14
5
—
—
—
—
5
25
13
5
ns
ns
ns
ns
–5
5.5
8
–5
—
—
—
—
–5
5.5
4
–5
—
—
—
—
–5
5.5
3
–5
—
—
—
—
ns
ns
ns
ns
All DSPI timing specifications use the fastest slew rate (SRC = 0b11) on pad type M or MH. DSPI signals using pad types
of S or SH have an additional delay based on the slew rate. DSPI timing is specified at: VDDEH = 3.0–5.25 V;TA = TL to TH;
and CL = 50 pF with SRC = 0b11.
Speed is the nominal maximum frequency. Max. speed is the maximum speed allowed including frequency modulation (FM).
82 MHz parts allow for 80 MHz system clock + 2% FM; 114 MHz parts allow for 112 MHz system clock + 2% FM; and
132 MHz parts allow for 128 MHz system clock + 2% FM.
The minimum SCK cycle time restricts the baud rate selection for the given system clock rate.
These numbers are calculated based on two MPC55xx devices communicating over a DSPI link.
The actual minimum SCK cycle time is limited by pad performance.
The maximum value is programmable in DSPI_CTARx[PSSCK] and DSPI_CTARx[CSSCK].
The maximum value is programmable in DSPI_CTARx[PASC] and DSPI_CTARx[ASC].
This number is calculated using the SMPL_PT field in DSPI_MCR set to 0b10.
MPC5554 Microcontroller Data Sheet, Rev. 4
Freescale Semiconductor
39
Electrical Characteristics
2
3
PCSx
1
4
SCK output
(CPOL=0)
4
SCK output
(CPOL=1)
9
SIN
10
First data
Last data
Data
12
SOUT
First data
11
Data
Last data
Figure 18. DSPI Classic SPI Timing—Master, CPHA = 0
PCSx
SCK output
(CPOL=0)
10
SCK output
(CPOL=1)
9
SIN
Data
First data
12
SOUT
First data
Last data
11
Data
Last data
Figure 19. DSPI Classic SPI Timing—Master, CPHA = 1
MPC5554 Microcontroller Data Sheet, Rev. 4
40
Freescale Semiconductor
Electrical Characteristics
3
2
SS
1
4
SCK input
(CPOL=0)
4
SCK input
(CPOL=1)
5
First data
SOUT
9
6
Data
Last data
Data
Last data
10
First data
SIN
11
12
Figure 20. DSPI Classic SPI Timing—Slave, CPHA = 0
SS
SCK input
(CPOL=0)
SCK input
(CPOL=1)
11
5
12
SOUT
First data
9
SIN
Data
Last data
Data
Last data
6
10
First data
Figure 21. DSPI Classic SPI Timing—Slave, CPHA = 1
MPC5554 Microcontroller Data Sheet, Rev. 4
Freescale Semiconductor
41
Electrical Characteristics
3
PCSx
4
1
2
SCK output
(CPOL=0)
4
SCK output
(CPOL=1)
9
SIN
10
First data
Last data
Data
12
SOUT
11
First data
Last data
Data
Figure 22. DSPI Modified Transfer Format Timing—Master, CPHA = 0
PCSx
SCK output
(CPOL=0)
SCK output
(CPOL=1)
10
9
SIN
First data
Data
12
SOUT
First data
Data
Last data
11
Last data
Figure 23. DSPI Modified Transfer Format Timing—Master, CPHA = 1
MPC5554 Microcontroller Data Sheet, Rev. 4
42
Freescale Semiconductor
Electrical Characteristics
3
2
SS
1
SCK input
(CPOL=0)
4
4
SCK input
(CPOL=1)
12
11
5
First data
SOUT
Data
Last data
10
9
Data
First data
SIN
6
Last data
Figure 24. DSPI Modified Transfer Format Timing—Slave, CPHA = 0
SS
SCK input
(CPOL=0)
SCK input
(CPOL=1)
11
5
6
12
First data
SOUT
9
Last data
Data
Last data
10
First data
SIN
Data
Figure 25. DSPI Modified Transfer Format Timing—Slave, CPHA = 1
7
8
PCSS
PCSx
Figure 26. DSPI PCS Strobe (PCSS) Timing
MPC5554 Microcontroller Data Sheet, Rev. 4
Freescale Semiconductor
43
Electrical Characteristics
3.13.9
eQADC SSI Timing
Table 27. EQADC SSI Timing Characteristics
Spec
Rating
Symbol
Minimum
Typical
Maximum
Unit
tFCK
2
—
17
tSYS_CLK
2
FCK period (tFCK = 1  fFCK) 1, 2
3
Clock (FCK) high time
tFCKHT
tSYS_CLK  6.5
—
9  (tSYS_CLK  6.5)
ns
4
Clock (FCK) low time
tFCKLT
tSYS_CLK  6.5
—
8  (tSYS_CLK  6.5)
ns
5
SDS lead / lag time
tSDS_LL
–7.5
—
+7.5
ns
6
SDO lead / lag time
tSDO_LL
–7.5
—
+7.5
ns
7
EQADC data setup time (inputs)
tEQ_SU
22
—
—
ns
8
EQADC data hold time (inputs)
tEQ_HO
1
—
—
ns
1
SS timing specified at VDDEH = 3.0–5.25 V, TA = TL to TH, and CL = 25 pF with SRC = 0b11. Maximum operating frequency
varies depending on track delays, master pad delays, and slave pad delays.
2 FCK duty cycle is not 50% when it is generated through the division of the system clock by an odd number.
2
3
4
FCK
5
4
SDS
25th
6
SDO
1st (MSB)
5
2nd
26th
External device data sample at
FCK falling-edge
8
7
SDI
1st (MSB) 2nd
25th
26th
EQADC data sample at
FCK rising-edge
Figure 27. EQADC SSI Timing
MPC5554 Microcontroller Data Sheet, Rev. 4
44
Freescale Semiconductor
Mechanicals
4
Mechanicals
4.1
MPC5553546667 416 PBGA Pinout
Figure 28, Figure 29, and Figure 30 show the pinout for the MPC5553546667 416 PBGA package. The
alternate Fast Ethernet Controller (FEC) signals are multiplexed with the data calibration bus signals.
NOTE
The MPC5500 devices are pin compatible for software portability and use
the primary function names to label the pins in the BGA diagram. Although
some devices do not support all the primary functions shown in the BGA
diagram, the muxed and GPIO signals on those pins remain available. See
the signals chapter in the device reference manual for the signal muxing.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
A
VSS
VSTBY
AN37
AN11
VDDA1
AN16
AN1
AN5
VRH
AN23
AN27
AN28
AN35
VSSA0
AN15
ETRIG ETPUB ETPUB ETPUB ETPUB
1
18
20
24
27
B
VDD
VSS
AN36
AN39
AN19
AN20
AN0
AN4
REF
BYPC
AN22
AN26
AN31
AN32
VSSA0
AN14
ETRIG ETPUB ETPUB ETPUB ETPUB MDO10 MDO7
0
21
25
28
31
VDD
VSS
AN8
AN17
VSSA1
AN21
AN3
AN7
VRL
AN25
AN30
AN33
VDDA0
AN13
ETPUB ETPUB ETPUB ETPUB MDO9
19
22
26
30
MDO6
AN29
AN34 VDDEH AN12
9
ETPUB ETPUB ETPUB ETPUB MDO5
16
17
23
29
MDO2 VDDEH
8
C VDD33
ETPUA ETPUA
D
30
31
E
VDD
ETPUA ETPUA VDDEH
28
29
1
VSS
AN38
AN9
AN10
AN18
AN2
AN6
AN24
16
17
18
19
20
21
GPIO
205
22
23
24
25
26
VDD
VDD33
VSS
MDO4
MDO0
VSS
MDO1
VSS
VDDE7
VDD
C
VSS
VDDE7
TCK
TDI
D
VDDE7
TMS
TDO
TEST
E
MDO11 MDO8
MDO3
VDD
A
VDDE7 B
ETPUA ETPUA ETPUA VDDEH
F
24
27
26
1
MSEO0 JCOMP
EVTI
EVTO F
G
ETPUA ETPUA ETPUA ETPUA
23
22
25
21
MSEO1 MCKO
GPIO
204
ETPUB
G
15
H
ETPUA ETPUA ETPUA ETPUA
20
19
18
17
RDY
ETPUA ETPUA ETPUA ETPUA
J
14
13
16
15
K
ETPUA ETPUA ETPUA ETPUA
12
11
10
9
L
ETPUA ETPUA ETPUA ETPUA
8
7
6
5
GPIO
203
ETPUB ETPUB
H
14
13
VDDEH ETPUB ETPUB ETPUB
J
6
12
11
9
VSS
VSS
VSS
VSS
VSS
VSS
ETPUB ETPUB ETPUB ETPUB
K
10
8
7
5
VDDE7 VDDE7 VDDE7 VDDE7
VSS
VSS
VSS
VSS
VSS
VDDE7
ETPUB ETPUB ETPUB ETPUB
L
6
4
3
2
ETPUA ETPUA ETPUA ETPUA
M
4
3
2
1
VDDE2 VDDE2
VSS
VSS
VSS
VSS
VSS
VDDE7
TCRCLK ETPUB ETPUB
B
1
0
ETPUA TCRCLK
0
A
VDDE2 VDDE2
VSS
VSS
VSS
VSS
VSS
VDDE7
SOUTB PCSB3 PCSB0 PCSB1 N
N
BDIP
TEA
P
CS3
CS2
R
WE3
WE2
CS1
WE1
VDDE2 VDDE2
VSS
VSS
VSS
VSS
VSS
VSS
PCSA3 PCSB4 SCKB PCSB2 P
WE0
VDDE2 VDDE2
VSS
VSS
VSS
VSS
VSS
VSS
PCSB5 SOUTA
VDDE2
T VDDE2 TSIZ0 RD_WR VDDE2
VSS
VSS
VSS
PCSA1 PCSA0 PCSA2
VSS
VSS
PCSA4 TXDA PCSA5 VFLASH U
ADDR
18
ADDR
W
20
ADDR
22
ADDR
21
ADDR
VDDE2
11
ADDR
AA
24
ADDR
23
ADDR
13
ADDR
12
AB VDDE2
ADDR
25
ADDR
15
ADDR
14
ADDR
26
ADDR
27
ADDR
31
VSS
VDD
DATA
26
DATA
28
VDDE2
DATA
30
DATA
31
DATA
8
DATA
10
VDDE2
DATA
12
ADDR
AD
28
ADDR
30
DATA
25
DATA
27
DATA
29
VDD33
GPIO
207
DATA
9
DATA
11
DATA
13
DATA
15
AC
VDD33
ADDR
17
TS
ADDR
8
ADDR
19
ADDR
9
ADDR
10
VSS
SCKA R
VDDE2 VDDE2 VDDE2 VDDE2
V
TA
SINA
VDDE2 VDDE2 VDDE2 VDDE2 VDDE2
ADDR
16
Y
M
CS0
U
TSIZ1
SINB
VPP
T
CNTXC RXDA RSTOUT RST
CFG
V
RXDB CNRXC TXDB RESET W
Note:
NC
WKP
CFG
No connect. AC22 & AD23 reserved
BOOT
CFG1
VDDEH PLL
6
CFG1
DATA
14
EMIOS EMIOS EMIOS EMIOS VDDEH VDDE5
2
8
12
21
4
NC
EMIOS EMIOS EMIOS EMIOS EMIOS EMIOS CNTXA VDDE5
6
10
15
17
22
3
VRC
VSS
VSS
SYN
Y
BOOT EXTAL
AA
CFG0
VDD
VRC
CTL
PLL
CFG0
XTAL
AB
VSS
VDD
VRC33
VDD
SYN
AC
NC
VSS
VDD
VSS
VDD
DATA
24
AE
ADDR
29
VSS
VDD
DATA
17
DATA
19
DATA
21
DATA
23
DATA
0
DATA
2
DATA
4
DATA
6
OE
BR
BG
EMIOS EMIOS EMIOS EMIOS EMIOS EMIOS EMIOS CNRXA VDDE5 CLKOUT VSS
5
9
13
16
19
23
1
VDD
AE
AF
VSS
VDD
DATA
16
DATA
18
VDDE2
DATA
20
DATA
22
GPIO
206
DATA
1
DATA
3
VDDE2
DATA
5
DATA
7
BB
EMIOS EMIOS EMIOS EMIOS EMIOS EMIOS EMIOS CNTXB CNRXB VDDE5
4
7
11
14
18
20
0
ENG
CLK
VSS
AF
1
2
3
4
5
6
7
8
9
10
11
12
13
14
25
26
15
16
17
18
19
20
21
22
23
24
VDD33 AD
Figure 28. MPC5553546667 416 Package
MPC5554 Microcontroller Data Sheet, Rev. 4
Freescale Semiconductor
45
Mechanicals
1
2
3
4
5
6
7
8
9
10
11
12
13
A
VSS
VSTBY
AN37
AN11
VDDA1
AN16
AN1
AN5
VRH
AN23
AN27
AN28
AN35
B
VDD
VSS
AN36
AN39
AN19
AN20
AN0
AN4
REF
BYPC
AN22
AN26
AN31
AN32
VDD
VSS
AN8
AN17
VSSA1
AN21
AN3
AN7
VRL
AN25
AN30
AN33
VDD
VSS
AN38
AN9
AN10
AN18
AN2
AN6
AN24
AN29
AN34
C VDD33
D
ETPUA ETPUA
30
31
E
ETPUA ETPUA VDDEH
28
29
1
F
ETPUA ETPUA ETPUA VDDEH
24
27
26
1
G
ETPUA ETPUA ETPUA ETPUA
23
22
25
21
H
ETPUA ETPUA ETPUA ETPUA
20
19
18
17
J
ETPUA ETPUA ETPUA ETPUA
16
15
14
13
K
ETPUA ETPUA ETPUA ETPUA
12
11
10
9
VSS
VSS
VSS
VSS
L
ETPUA ETPUA ETPUA ETPUA
8
7
6
5
VSS
VSS
VSS
VSS
M
ETPUA ETPUA ETPUA ETPUA
4
3
2
1
VDDE2 VDDE2
VSS
VSS
ETPUA TCRCLK
0
A
VDDE2 VDDE2
VSS
VSS
VDD
N
BDIP
TEA
P
CS3
CS2
CS1
CS0
VDDE2 VDDE2
VSS
VSS
R
WE3
WE2
WE1
WE0
VDDE2 VDDE2
VSS
VSS
VDDE2
T VDDE2 TSIZ0 RD_WR VDDE2
VSS
VDDE2 VDDE2
U
ADDR
16
TSIZ1
TA
VDD33
V
ADDR
18
ADDR
17
TS
ADDR
8
W
ADDR
20
ADDR
19
ADDR
9
ADDR
10
Y
ADDR
22
ADDR
21
ADDR
VDDE2
11
AA
ADDR
24
ADDR
23
ADDR
13
ADDR
12
AB VDDE2
ADDR
25
ADDR
15
ADDR
14
AC
ADDR
26
ADDR
27
ADDR
31
VSS
VDD
DATA
26
DATA
28
VDDE2
DATA
30
DATA
31
DATA
8
DATA
10
VDDE2
AD
ADDR
28
ADDR
30
VSS
VDD
DATA
24
DATA
25
DATA
27
DATA
29
VDD33
GPIO
207
DATA
9
DATA
11
DATA
13
AE
ADDR
29
VSS
VDD
DATA
17
DATA
19
DATA
21
DATA
23
DATA
0
DATA
2
DATA
4
DATA
6
OE
BR
AF
VSS
VDD
DATA
16
DATA
18
VDDE2
DATA
20
DATA
22
GPIO
206
DATA
1
DATA
3
VDDE2
DATA
5
DATA
7
1
2
3
4
5
6
7
8
9
10
11
12
13
VSS
VDDE2 VDDE2 VDDE2
Figure 29. MPC5553546667 416 Package Left Side (view 1 of 2)
MPC5554 Microcontroller Data Sheet, Rev. 4
46
Freescale Semiconductor
Mechanicals
14
15
16
17
18
19
20
21
GPIO
205
22
23
24
25
26
VDD
VDD33
VSS
VSSA0
AN15
ETRIG ETPUB ETPUB ETPUB ETPUB
1
18
20
24
27
VSSA0
AN14
ETRIG ETPUB ETPUB ETPUB ETPUB MDO10 MDO7
0
21
25
28
31
MDO4
MDO0
VSS
VDDA0
AN13
ETPUB ETPUB ETPUB ETPUB MDO9
19
22
26
30
MDO6
MDO1
VSS
VDDE7
VDD
C
VDDEH AN12
9
ETPUB ETPUB ETPUB ETPUB MDO5
16
17
23
29
MDO2 VDDEH
8
VSS
VDDE7
TCK
TDI
D
VDDE7
TMS
TDO
TEST
E
MSEO0 JCOMP
EVTI
EVTO
F
MSEO1 MCKO
GPIO
204
ETPUB
G
15
MDO11 MDO8
MDO3
RDY
GPIO
203
A
VDDE7 B
ETPUB ETPUB
H
14
13
VDDEH ETPUB ETPUB ETPUB
J
6
12
11
9
ETPUB ETPUB ETPUB ETPUB
K
10
8
7
5
VDDE7 VDDE7 VDDE7 VDDE7
VSS
VSS
VSS
VDDE7
ETPUB ETPUB ETPUB ETPUB
L
6
4
3
2
VSS
VSS
VSS
VDDE7
TCRCLK ETPUB ETPUB
B
1
0
VSS
VSS
VSS
VDDE7
SOUTB PCSB3 PCSB0 PCSB1 N
VSS
VSS
VSS
VSS
PCSA3 PCSB4 SCKB PCSB2 P
VSS
VSS
VSS
VSS
PCSB5 SOUTA
VDDE2 VDDE2
VSS
VSS
PCSA1 PCSA0 PCSA2
VDDE2 VDDE2
VSS
VSS
PCSA4 TXDA PCSA5 VFLASH U
SINA
CNTXC RXDA RSTOUT
SINB
M
SCKA R
VPP
RST
CFG
T
V
RXDB CNRXC TXDB RESET W
Note:
DATA
12
DATA
15
NC
DATA
14
WKP
CFG
No connect. AC22 & AD23 reserved
EMIOS EMIOS EMIOS EMIOS VDDEH VDDE5
2
8
12
21
4
NC
EMIOS EMIOS EMIOS EMIOS EMIOS EMIOS CNTXA VDDE5
3
6
10
15
17
22
BOOT
CFG1
VRC
VSS
VSS
SYN
Y
VDDEH PLL
6
CFG1
BOOT
CFG0
VDD
VRC
CTL
PLL
CFG0
XTAL
AB
VSS
VDD
VRC33
VDD
SYN
AC
NC
VSS
VDD
EXTAL AA
VDD33 AD
BG
EMIOS EMIOS EMIOS EMIOS EMIOS EMIOS EMIOS CNRXA VDDE5 CLKOUT VSS
1
5
9
13
16
19
23
VDD
AE
BB
EMIOS EMIOS EMIOS EMIOS EMIOS EMIOS EMIOS CNTXB CNRXB VDDE5
0
4
7
11
14
18
20
ENG
CLK
VSS
AF
25
26
14
15
16
17
18
19
20
21
22
23
24
Figure 30. MPC5553546667 416 Package Right Side (view 2 of 2)
Figure 31. MPC5567 416 Package
MPC5554 Microcontroller Data Sheet, Rev. 4
Freescale Semiconductor
47
Mechanicals
The package drawings of the MPC55 208-pin MAP BGA are shown below.
Figure 32. 208-Pin Package
MPC5554 Microcontroller Data Sheet, Rev. 4
48
Freescale Semiconductor
Mechanicals
Figure 32. MPC55 208 MAP BGA Package (continued)
MPC5554 Microcontroller Data Sheet, Rev. 4
Freescale Semiconductor
49
Mechanicals
The package drawings of the 324-pin TEPBGA package are shown in Figure 33.
Figure 33. 324 TEPBGA Package
MPC5554 Microcontroller Data Sheet, Rev. 4
50
Freescale Semiconductor
Mechanicals
Figure 33. 324 TEPBGA Package (continued)
MPC5554 Microcontroller Data Sheet, Rev. 4
Freescale Semiconductor
51
Mechanicals
4.2
MPC5554 416-Pin Package Dimensions
The package drawings of the MPC5554 416 pin TEPBGA package are shown in Figure 34.
Figure 34. MPC5554 416 TEPBGA Package
MPC5554 Microcontroller Data Sheet, Rev. 4
52
Freescale Semiconductor
Mechanicals
Figure 34. MPC5554 416 TEPBGA Package (continued)
MPC5554 Microcontroller Data Sheet, Rev. 4
Freescale Semiconductor
53
Revision History for the MPC5554 Data Sheet
5
Revision History for the MPC5554 Data Sheet
The history of revisions made to this data sheet are described in this section.
5.1
Changes between Revision 3 and Revision 4
Location
Description of Changes
Added the following paragraph in Section 3.7, “Power-Up/Down Sequencing”:
“During initial power ramp-up, when Vstby is 0.6v or above. a typical current of 1-3mA and
Section 3.7, “Power-Up/Down maximum of 4mA may be seen until VDD is applied. This current will not reoccur until Vstby is
lowered below Vstby min. specification”.
Sequencing”
Moved Figure 2 (fISTBY Worst-case Specifications) “ISTBY Worst-case Specifications” to
Section 3.7, “Power-Up/Down Sequencing”.
Removed the footnote “Figure 3 shows an illustration of the IDD_STBY values interpolated for
these temperature values”.
Section 3.8, “DC Electrical
Specifications”
Changed the footnote attached to IDD_STBY” to “The current specification relates to average
standby operation after SRAM has been loaded with data. For power up current see
Section 3.7, “Power-Up/Down Sequencing”,Figure 2 (fISTBY Worst-case Specifications).”
In Table 9 (DC Electrical Specifications (TA = TL to TH)) the Characteristic “Refer to Figure 3 for
an interpolation of this data” changed to “RAM standby current”.
5.2
Changes between Revision 2 and Revision 3
The substantive changes incorporated in MPC5554 Data Sheet Rev. 2.0 to produce Rev. 3.0 are listed in
Table 28. The changes are listed in sequential page number order.
Table 28. Changes Between Rev. 2.0 and 3.0
Location
Description of Changes
Throughout:
Changed ‘TA = TL – TH’ to ‘TA = TL to TH.’
Title page:
Changed the Revision number from 2 to 3. Changed the date. Made the same change in the lower left corner of the
back page.
Section 1, “Overview”
• Fourth paragraph, First sentence: Deleted ‘of the MPC5500 family’; Second to last sentence: Deleted ‘can’.
• Fifth paragraph, First sentence: Replaced ‘MPC5500 family’ with ‘MPC5554’; Last sentence: Replaced ‘can be’
with ‘is’.
• Sixth paragraph, First sentence: Replaced ‘MPC5500 family’ with ‘MPC5554’;
• Second to last paragraph: Rewrote to read: The MCU has an on-chip enhanced queued dual analog-to-digital
converter (eQADC). The 416 package has 40-channels.
Section 3.2.1, “General Notes for Specifications at Maximum Junction Temperature
Updated the address of Semiconductor Equipment and Materials International
3081 Zanker Rd.
San Jose, CA., 95134
(408) 943-6900
MPC5554 Microcontroller Data Sheet, Rev. 4
54
Freescale Semiconductor
Revision History for the MPC5554 Data Sheet
Table 28. Changes Between Rev. 2.0 and 3.0 (continued)
Location
Description of Changes
Section 3.7, “Power-Up/Down Sequencing
Last paragraph: Changed the first sentence FROM , , , the voltage on the pins goes to high-impedance until . . .
TO. . .the pins go to a high-impedance state until . . .
Section 3.7.3, “Power-Down Sequence (VRC33 Grounded)”
Last sentence: Changed from: ‘This ensures that the digital 1.5 V logic, which is reset by the ORed POR only and
can cause the 1.5 V supply to decrease below its specification, is reset properly.’
To: ‘This ensures that the digital 1.5 V logic, which is reset only by an ORed POR and can cause the 1.5 V supply
to decrease less than its specification, resets correctly.’
Section 4.1, “MPC5553546667 416 PBGA Pinout”
Added the following NOTE before the 416 BGA Map:
NOTE
The MPC5500 devices are pin compatible for software portability and use the primary
function names to label the pins in the BGA diagram. Although some devices do not support
all the primary functions shown in the BGA diagram, the muxed and GPIO signals on those
pins remain available. See the signals chapter in the device reference manual for the signal
muxing.
Table 5 (ESD Ratings ,) ESD Ratings:
Changed footnote 2 from:
• ‘Device failure is defined as: ‘If after exposure to ESD pulses, the device no longer meets the device specification
requirements. Complete DC parametric and functional testing will be performed per applicable device
specification at room temperature followed by hot temperature, unless specified otherwise in the device
specification.’
to:
• Device failure is defined as: ‘If after exposure to ESD pulses, the device does not meet the device specification
requirements, which includes the complete DC parametric and functional testing at room temperature and hot
temperature.
Table 6 (VRC and POR Electrical Specifications) VCR/POR Electrical Specifications:
• Added footnote 1 to specs 1, 2, and 3 that reads: The internal POR signals are VPOR15, VPOR33, and VPOR5.
On power up, assert RESET before the internal POR negates. RESET must remain asserted until the power
supplies are within the operating conditions as specified in Table 9 DC Electrical Specifications. On power down,
assert RESET before any power supplies fall outside the operating conditions and until the internal POR asserts.
• Reformatted columns.
Table 9 (DC Electrical Specifications (TA = TL to TH)) DC Electrical Specifications:
• Added footnote that reads: VDDE2 and VDDE3 are limited to 2.25–3.6 V only if SIU_ECCR[EBTS] = 0; VDDE2 and
VDDE3 have a range of 1.6–3.6 V if SIU_ECCR[EBTS] =1.
• Added (TA = TL to TH) to the table title.
Table 14 (Flash Program and Erase Specifications (TA = TL to TH)) Flash Program and Erase Specifications (TA = TL to TH)
• Footnote 1, Changed ‘Typical program and erase times assume nominal supply values and operation at 25 oC’
to ‘Typical program and erase times are calculated at 25 oC operating temperature using nominal supply values..’
Table 17 (Pad AC Specifications (VDDEH = 5.0 V, VDDE = 1.8 V)) Pad AC Specifications (VDDEH = 5.0 V, VDDE = 1.8 V)
• Footnote 1, changed ‘VDDEH = 4.5–5.5;’ to ‘VDDEH = 4.5–5.25;’
Table 19 (Reset and Configuration Pin Timing) Reset and Configuration Pin Timing:
• Footnote 1: Removed VDD = 1.35–1.65 V.
MPC5554 Microcontroller Data Sheet, Rev. 4
Freescale Semiconductor
55
Revision History for the MPC5554 Data Sheet
Table 28. Changes Between Rev. 2.0 and 3.0 (continued)
Location
Description of Changes
Table 20 (JTAG Pin AC Electrical Characteristics) JTAG Pin AC Electrical Characteristics
• Footnote 1: Removed VDD = 1.35–1.65 V, and VDD33 and VDDSYN = 3.0–3.6 V.
Table 22 (Bus Operation Timing) Bus Operation Timing:
• External Bus Frequency in the table heading: Added footnote that reads: Speed is the nominal maximum
frequency. Max speed is the maximum speed allowed including frequency modulation (FM). 82 MHz parts allow
for 80 MHz system clock + 2% FM; 114 MHz parts allow for 112 MHz system clock + 2% FM; and 132 MHz parts
allow for 128 MHz system clock + 2% FM.
• Specifications 5, 6, 7, and 8: Reordered the EBI signals within each specification.
• Specifications 7 and 8: Removed EBI signals BDIP, OE, TSIZ[0:1], WE/BE[0:3].
• Footnote 1: Removed VDD = 1.35–1.65 V, and VDD33 and VDDSYN = 3.0–3.6 V.
• Footnote 8: Changed EBTS to SIU_ECCR[EBTS].
Table 23 (External Interrupt Timing) External Interrupt Timing (IRQ Signals)
• Footnote 1: Removed VDD = 1.35–1.65 V; changed VDDEH = 3.0–5.5 V to VDDEH = 3.0–5.25 V.
Table 24 (eTPU Timing) eTPU Timing
• Footnote 1: Changed VDDEH = 3.0–5.5 V to VDDEH = 3.0–5.25 V.
Table 25 (eMIOS Timing) eMIOS Timing
• Footnote 1: Changed VDDEH = 3.0–5.5 V to VDDEH = 3.0–5.25 V.
Table 26 (DSPI Timing’) DSPI Timing:
• Footnote 1, changed ‘VDDEH = 3.0–5.5 V;’ to ‘VDDEH = 3.0–5.25 V;’
• Table Title: Added footnote that reads: Speed is the nominal maximum frequency. Max speed is the maximum
speed allowed including frequency modulation (FM). 82 MHz parts allow for 80 MHz system clock + 2% FM;
114 MHz parts allow for 112 MHz system clock + 2% FM; and 132 MHz parts allow for
128 MHz system clock + 2% FM.
• Spec 1: SCK cycle time; Changed to 80 MHz minimum column from 25 to 24.4; 112 MHz minimum column from
17.9 to 17.5; 112 MHz maximum column from 2.0 to 2.1.
Table 27 (EQADC SSI Timing Characteristics) EQADC SSI Timing Characteristics
• Footnote 1: Changed VDDEH = 3.0–5.5 V to VDDEH = 3.0–5.25 V.
MPC5554 Microcontroller Data Sheet, Rev. 4
56
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MPC5554 Microcontroller Data Sheet, Rev. 4
Freescale Semiconductor
57
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Document Number: MPC5554
Rev. 4
5/2012
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