EGF20A THRU EGF20M SURFACE MOUNT GLASS PASSIVATED JUNCTION HIGH EFFICIENT RECTIFIER Reverse Voltage - 50 to 1000 Volts Forward Current - 2.0 Amperes EEDD SMB/DO-214AA T T N N E E T T PPAA FEATURES 0.150(3.80) 0.087(2.20) 0.130(3.30) 0.075(1.90) * * * * * * * GPRC (Glass Passivated Rectifier Chip) inside Glass passivated cavity-free junction Ideal for surface mount automotive applications Superfast recovery time for high efficiency Built-in strain relief Easy pick and place o High temperature soldering guaranteed: 260 C/10 seconds, at terminals * Plastic package has Underwriters Laboratory Flammability Classification 94V-0 0.187(4.75) 0.167(4.24) 0.016(0.40) 0.006(0.15) 0.096(2.43) 0.079(2.00) 0.050(1.40) 0.039(1.0) 0.236(6.00) 0.197(5.00) MECHANICAL DATA Case : JEDEC DO-214AA molded plastic over passivated chip Terminals : Tin plated, solderable per MIL-STD-750, Method 2026 Polarity : Color band denotes cathode end Weight : 0.003 ounes , 0.093 gram *Dimensions in inches and (millimeters) TM MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS o EGF20 Ratings at 25 C ambient temperature SYMBOLS unless otherwise specified. A B D G J K M UNITS Maximum repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 Volts Maximum RMS voltage VRMS 35 70 140 280 420 560 700 Volts VDC 50 100 200 400 600 800 1000 Volts Maximum DC blocking voltage o Maximum average forward rectified current at TL=75 C I (AV) 2.0 Amps Peak forward surge current 8.3ms single half sine-wave IFSM 65 60 Amps 1.7 Volts superimposed on rated load (JEDEC Method) Maximum instantaneous forward voltage at 2.0 A VF o 1.25 IR 5 30 100 5 100 - uA Maximum reverse recovery time (NOTE 1) trr 50 75 nS Typical junction capacitance (NOTE 2) CJ Maximum DC reverse current at rated DC blocking voltage TA=25 C o TA=125 C o TA=150 C 1.0 Typical thermal resistance (NOTE 3) Operating junction and storage temperature range R R JA JL TJ,TSTG 45 pF 75 20 o C/W o -65 to +175 C NOTES : (1) Reverse recovery test condition : IF 0.5A, IR=1.0A, Irr=0.25A (2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts (3) Thermal resistance from junction to ambient and from junction to lead P.C.B. mounted on 0.2 x 0.2" (5.0 x 5.0mm) copper pad areas. REV. 0 Zowie Technology Corporation RATINGS AND CHARACTERISTIC CURVES EGF20A THRU EGF20M FIG.1 - FORWARD CURRENT DERATING CURVE FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 70 RESISTIVE OR INDUCTIVE LOAD PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD RECTIFIED CURRENT, AMPERES 2.0 1.5 1.0 0.5 0 8.3ms SINGLE HALF SINE-WAVE (JEDEC Method) 60 50 40 EGF20A~EGF20G EGF20J~EGF20M 30 20 10 0 0 25 50 75 100 125 150 1 175 10 100 LEAD TEMPERATURE, C NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS FIG.4 - TYPICAL REVERSE CHARACTERISTICS o 100 10.00 INSTANTANEOUS REVERSE LEAKAGE CURRENT, MICROAMPERES IINSTANTANEOUS FORWARD CURRENT, AMPERES PULSE WIDTH=300uS 1% DUTY CYCLE 1.00 0.10 EGF20J~EGF20M EGF20G EGF20A~EGF20D o TJ = 150 C 1 o TJ = 25 C 0.1 0 0.01 0.2 0.4 0.6 0.8 1.0 1.2 1.4 o TJ = 125 C 10 1.6 1.8 20 40 60 80 100 110 PERCENT OF RATED PEAK REVERSE VOLTAGE,% INSTANTANEOUS FORWARD VOLTAGE, VOLTS JUNCTION CAPACITANCE, pF FIG.6 - TYPICAL TRANSIENT THERMAL IMPEDANCE TRANSIENT THERMAL IMPEDANCE(oC/W) FIG.5 - TYPICAL JUNCTION CAPACITANCE 200 o TJ = 25 C 100 60 40 20 10 6 4 2 10 1 0.1 1 .1 .2 .4 1.0 2 4 10 REVERSE VOLTAGE, VOLTS REV. 0 100 20 40 100 0.01 0.10 1.0 10 100 t , PULSE DURATION, sec Zowie Technology Corporation