EGF10A THRU EGF10M SURFACE MOUNT GLASS PASSIVATED JUNCTION HIGH EFFICIENT RECTIFIER Reverse Voltage - 50 to 1000 Volts Forward Current - 1.0 Ampere EEDD SMA/DO-214AC T T N N E E T T PPAA FEATURES 0.115(2.92) 0.064(1.63) 0.090(2.28) 0.050(1.27) * * * * * * * GPRC (Glass Passivated Rectifier Chip) inside Glass passivated cavity-free junction Ideal for surface mount automotive applications Superfast recovery time for high efficiency Built-in strain relief Easy pick and place o High temperature soldering guaranteed: 260 C/10 seconds, at terminals * Plastic package has Underwriters Laboratory Flammability Classification 94V-0 0.181(4.60) 0.157(4.00) 0.016(0.41) 0.006(0.15) 0.096(2.43) 0.078(1.99) Max. 0.203 0.050(1.27) 0.030(0.77) 0.220(5.60) MECHANICAL DATA 0.191(4.84) Case : JEDEC DO-214AC molded plastic over passivated chip Terminals : Tin plated, solderable per MIL-STD-750, Method 2026 Polarity : Color band denotes cathode end Weight : 0.002 ounes , 0.064 gram *Dimensions in inches and (millimeters) TM MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS o EGF10 Ratings at 25 C ambient temperature SYMBOLS unless otherwise specified. UNITS A B D G J K M 100 200 400 600 800 1000 Volts Maximum repetitive peak reverse voltage VRRM 50 Maximum RMS voltage VRMS 35 70 140 280 420 560 700 Volts VDC 50 100 200 400 600 800 1000 Volts Maximum DC blocking voltage o Maximum average forward rectified current at TL=75 C I (AV) 1.0 Amps IFSM 30 Amps Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Maximum instantaneous forward voltage at 1.0 A VF o Maximum DC reverse current at rated DC blocking voltage TA=25 C o TA=125 C o TA=150 C Maximum reverse recovery time (NOTE 1) Typical junction capacitance (NOTE 2) Typical thermal resistance (NOTE 3) Operating junction and storage temperature range 1.25 1.7 Volts IR 5 30 50 5 50 - uA trr 50 75 nS CJ R R 1.0 JA JL TJ,TSTG 15 pF 67 26 o C/W o -65 to +175 C NOTES : (1) Reverse recovery test condition : IF 0.5A, IR=1.0A, Irr=0.25A (2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts (3) Thermal resistance from junction to ambient and from junction to lead P.C.B. mounted on 0.2 x 0.2" (5.0 x 5.0mm) copper pad areas. REV. 1 Zowie Technology Corporation RATINGS AND CHARACTERISTIC CURVES EGF10A THRU EGF10M FIG.1 - FORWARD CURRENT DERATING CURVE FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 30 RESISTIVE OR INDUCTIVE LOAD PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD RECTIFIED CURRENT, AMPERES 1.0 0.5 0 8.3ms SINGLE HALF SINE-WAVE (JEDEC Method) 25 20 15 10 5 0 0 25 50 75 100 125 150 1 175 10 100 LEAD TEMPERATURE, oC NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS FIG.4 - TYPICAL REVERSE CHARACTERISTICS 100 10.00 INSTANTANEOUS REVERSE LEAKAGE CURRENT, MICROAMPERES IINSTANTANEOUS FORWARD CURRENT, AMPERES PULSE WIDTH=300uS 1% DUTY CYCLE 1.00 0.10 EGF10J~EGF10M EGF10G EGF10A~EGF10D o TJ = 150 C 10 1 o TJ = 25 C 0.1 0 0.01 0.2 0.4 0.6 0.8 1.0 1.2 1.4 o TJ = 125 C 1.6 1.8 20 40 60 80 100 110 PERCENT OF RATED PEAK REVERSE VOLTAGE,% INSTANTANEOUS FORWARD VOLTAGE, VOLTS FIG.6 - TYPICAL TRANSIENT THERMAL IMPEDANCE TRANSIENT THERMAL IMPEDANCE( C/W) FIG.5 - TYPICAL JUNCTION CAPACITANCE 200 o o JUNCTION CAPACITANCE, pF TJ = 25 C 100 60 40 20 10 6 4 2 10 1 0.1 1 .1 .2 .4 1.0 2 4 10 REVERSE VOLTAGE, VOLTS REV. 1 100 20 40 100 0.01 0.10 1.0 10 100 t , PULSE DURATION, sec Zowie Technology Corporation