hs1009eh tid report silox jan2014 final

Total dose testing of the IS-1009EH Voltage Reference
Nick van Vonno
Intersil Corporation
Revision 0
January 2014
Table of Contents
1.
2.
3.
4.
5
6
7
8
Introduction
Reference Documents
Part Description
Test Description
4.1 Irradiation facility
4.2 Test fixturing
4.3 Characterization equipment and procedures
4.4 Experimental Matrix
4.5 Downpoints
Results
5.1 Attributes data
5.2 Variables data
Discussion and Conclusion
Appendices
Document revision history
1
1. Introduction
This report reports the results of a low and high dose rate total dose test of the IS-1009EH
shunt voltage reference. The test was conducted in order to determine the sensitivity of the part to
the total dose environment and to determine if dose rate and bias sensitivity exist. It should be
noted that these samples were taken from an Intersil Palm Bay Fab 59 production lot that used
Silox passivation as opposed to the silicon nitride used in earlier production, and evaluating the
effects of this process change was an added objective of this work. Two fabrication lots were
tested. For lot DPM0JEHA the low dose rate irradiations were followed by a 100o biased anneal for
168 hours, with data taken after anneal. For lot G2A8CECH the low dose rate irradiations were
followed by a 24 hour biased anneal at room temperature, which was then followed by a 100o
biased anneal for 168 hours; this protocol addresses the requirements of ESA specification 22900,
‘Total Dose Steady-State Irradiation’. Data for lot G2A8CECH was taken after low dose rate
irradiation, before and after the RT anneal and then again after the HT anneal.
The IS-1009RH and IS-1009EH use the same die and differ only in the passivation
technology and total dose acceptance testing flow, which is performed on a wafer by wafer basis.
The IS-1009EH uses silicon dioxide (‘silox’) passivation while the IS-1009RH uses silicon nitride
(‘nitride’) passivation. Additionally the IS-1009EH is acceptance tested at low and high dose rate,
while the IS-1009RH is acceptance tested at high dose rate only.
2. Reference Documents
MIL-STD-883G test method 1019
IS-1009EH data sheet
DLA Standard Microcircuit Drawing (SMD) 5962-00523
3: Part Description
The IS-1009EH is a shunt voltage reference designed to provide an accurate 2.5V reference
voltage over a wide current range. The device is stable over a wide current range and is designed
to maintain stability over the full military temperature range and over time. It operates and is
specified at a lower minimum current than other 1009 types. The 0.2% reference tolerance is
achieved by on-chip trimming. An adjustment terminal is provided to allow for the calibration of
system errors. The use of this terminal to adjust the reference voltage does not affect the
temperature coefficient. Constructed in the Intersil dielectrically isolated EBHF process, the device
is immune to single event latchup (and indeed immune to latchup from any source).
Specifications for radiation hardened QML devices are controlled by the Defense Logistics
Agency, Land and Maritime (DLA). Detailed Electrical Specifications for the device are contained in
SMD 5962-00523. The SMD number must be used when ordering, and a "hot-link" is provided on
the Intersil homepage for downloading the document.
A block diagram of the IS-1009EH is not shown as the equivalent circuit of the part is a simple
Zener diode, refer to Figure 1.
2
4: Test Description
4.1 Irradiation Facilities
High dose rate testing to 300 krad(Si) was performed using a Gammacell 220 60Co irradiator
located in the Palm Bay, Florida Intersil facility. Low dose rate testing to 150 krad(Si) was
performed using a Hopewell Designs (Alpharetta, GA) N40 panoramic 60Co irradiator, also located
in the Palm Bay facility. The high dose rate irradiations were done at 65 rad(Si)/s and the low dose
rate work was performed at 0.010 rad(Si)/s, both per MIL-STD-883 Method 1019.7. The post low
dose rate biased anneals were performed in a small temperature chamber.
4.2 Test Fixturing
Fig. 1 shows the configuration used for biased irradiation at both high and low dose rate. This
bias configuration is in conformance with the SMD 5962-00523 configuration and was used for the
post-irradiation anneals as well.
NOTES:
V+ = +5 V 0.5 V
V- = GND
ADJ = Open
R1 = 2.5 k , 5 %, 1/4 W
Fig. 1: Irradiation bias configuration for the IS-1009EH per Standard Microcircuit Drawing (SMD) 596200523.
4.3 Characterization equipment and procedures
All electrical testing was performed outside the irradiator using the production automated test
equipment (ATE) with datalogging at each downpoint. Downpoint electrical testing was performed
at room temperature.
4.4 Experimental matrix
Samples of the IS-1009EH die were drawn from production lots DPM0JEHA and G2A8CECH
and were packaged in the 3-pad hermetic SMD.5 ceramic chip carrier production package.
Samples were processed through the standard burnin cycle before irradiation, as required by MILSTD-883, and were screened to the SMD 5962-00523 limits at room, low and high temperatures
prior to the test.
3
The experimental matrix for fabrication lot DPM0JEHA consisted of 19 samples irradiated at
high dose rate under bias, 8 samples irradiated at low dose rate with all pins grounded and 8
samples irradiated at low dose rate under bias. One control unit was used.
The experimental matrix for fabrication lot G2A8CECH consisted of 28 samples irradiated at
high dose rate under bias, 14 samples irradiated at low dose rate with all pins grounded and 14
samples irradiated at low dose rate under bias. One control unit was used.
4.5 Downpoints
Downpoints were 0, 50 and 300 krad(Si) for the high dose rate tests and 0, 25, 50, 75, 100,
125 and 150 krad(Si) for the low dose rate tests. Two fabrication lots were tested. For lot
DPM0JEHA the low dose rate irradiations were followed by a 100oC biased anneal for 168 hours,
with data taken after anneal. For lot G2A8CECH the low dose rate irradiations were followed by a
24 hour biased anneal at room temperature (RT), which was then followed by a 100oC (HT) biased
anneal for 168 hours. Data for this lot was taken at the low dose rate irradiation downpoints, before
and after the RT anneal and then again after the HT anneal.
5: Results
5.1 Attributes data
Table 1: Attributes data for lot DPM0JEHA.
Part
Bias
IS-1009EH
Dose rate,
rad(Si)/s
0.01
IS-1009EH
0.01
Grounded
IS-1009EH
65
Biased
Biased
Sample Downpoint
size
8
Pre-irradiation
25 krad(Si)
50 krad(Si)
75 krad(Si)
100 krad(Si)
125 krad(Si)
150 krad(Si)
HT anneal
8
Pre-irradiation
25 krad(Si)
50 krad(Si)
75 krad(Si)
100 krad(Si)
125 krad(Si)
150 krad(Si)
HT anneal
19
Pre-irradiation
50 krad(Si)
300 krad(Si)
Pass
(Note 1)
8
8
8
8
8
8
8
8
8
8
8
8
8
8
8
8
19
19
19
Note 1: ‘Pass’ indicates a sample that passes all post-irradiation SMD limits.
4
Fail
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
Table 2: Attributes data for lot G2A8CECH.
Part
Bias
IS-1009EH
Dose rate,
rad(Si)/s
0.01
IS-1009EH
0.01
Grounded
IS-1009EH
65
Biased
Biased
Sample Downpoint
size
14
Pre-irradiation
25 krad(Si)
50 krad(Si)
75 krad(Si)
100 krad(Si)
125 krad(Si)
150 krad(Si)
RT anneal
HT anneal
14
Pre-irradiation
25 krad(Si)
50 krad(Si)
75 krad(Si)
100 krad(Si)
125 krad(Si)
150 krad(Si)
RT anneal
HT anneal
28
Pre-irradiation
50 krad(Si)
300 krad(Si)
Pass
(Note 1)
14
14
14
14
14
14
14
14
14
14
14
14
14
14
14
14
14
14
28
28
28
Fail
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
Note 1: ‘Pass’ indicates a sample that passes all post-irradiation SMD limits.
5.2 Variables data
The plots in Figs. 2 through 9 show variables data at all downpoints. The plots show the
average, minimum and maximum of key parameters for both tests as a function of total dose for
each of the three irradiation conditions and the post-irradiation anneals.
5
2.52
DPM0JEHA
Reference voltage, V
2.515
2.51
2.505
2.5
LDR Bias Avg
LDR Bias max
LDR GND min
HDR Bias avg
HDR Bias max
Spec limit
2.495
2.49
LDR Bias min
LDR GND avg
LDR GND max
HDR Bias min
Spec limit
2.485
0
50
100
150
Anneal
200
250
300
Total dose, krad(Si)
Fig. 2: IS-1009EH fab lot DPM0JEHA reference output voltage at 1mA as a function of total dose irradiation
at low dose rate for the unbiased (all pins grounded) and the biased (per Fig. 1) cases and at high dose rate
for the biased (also per Fig. 1) case. The low dose rate irradiations were followed by a biased anneal at
o
100 C for 168 hours. The low dose rate was 0.01 rad(Si)/s and the high dose rate 65 rad(Si)/s. Sample size
for each of the two low dose rate cells was 8 each, while the high dose rate cell had 19 samples. The postirradiation SMD limits are 2.490V to 2.515V.
2.52
DPM0JEHA
Reference voltage, 400uA
2.515
2.51
LDR Bias Avg
LDR Bias min
LDR Bias max
LDR GND avg
LDR GND min
LDR GND max
HDR Bias avg
HDR Bias min
HDR Bias max
2.505
2.5
2.495
2.49
2.485
0
50
100
150
Anneal
200
250
300
Total dose, krad(Si)
Fig. 3: IS-1009EH fab lot DPM0JEHA reference output voltage at 400uA as a function of total dose
irradiation at low dose rate for the unbiased (all pins grounded) and the biased (per Fig. 1) cases and at high
dose rate for the biased (also per Fig. 1) case. The low dose rate irradiations were followed by a biased
o
anneal at 100 C for 168 hours. The low dose rate was 0.01 rad(Si)/s and the high dose rate 65 rad(Si)/s.
Sample size for each of the two low dose rate cells was 8 each, while the high dose rate cell had 19
samples. This is an informational parameter used to develop the load regulation (see Fig. 5) and is not
specified in the SMD.
6
2.52
DPM0JEHA
Reference volatge, 10mA, V
2.518
2.516
2.514
LDR Bias Avg
LDR Bias min
LDR Bias max
LDR GND avg
LDR GND min
LDR GND max
HDR Bias avg
HDR Bias min
HDR Bias max
2.512
2.51
2.508
2.506
2.504
2.502
2.5
2.498
0
50
100
150
Anneal
200
250
300
Total dose, krad(Si)
Fig. 4: IS-1009EH fab lot DPM0JEHA reference output voltage at 10mA as a function of total dose irradiation
at low dose rate for the unbiased (all pins grounded) and the biased (per Fig. 1) cases and at high dose rate
for the biased (also per Fig. 1) case. The low dose rate irradiations were followed by a biased anneal at
o
100 C for 168 hours. The low dose rate was 0.01 rad(Si)/s and the high dose rate 65 rad(Si)/s. Sample size
for each of the two low dose rate cells was 8 each, while the high dose rate cell had 19 samples. . This is an
informational parameter used to develop the load regulation (see Fig. 5) and is not specified in the SMD.
20
Delta VZ, 400uA to 10mA, mV
DPM0JEHA
15
10
5
0
-5
LDR Bias Avg
LDR Bias max
LDR GND min
HDR Bias avg
HDR Bias max
Spec limit
-10
-15
LDR Bias min
LDR GND avg
LDR GND max
HDR Bias min
Spec limit
-20
0
50
100
150
Anneal
200
250
300
Total dose, krad(Si)
Fig. 5: IS-1009EH fab lot DPM0JEHA load regulation, 400uA to 10mA, as a function of total dose irradiation
at low dose rate for the unbiased (all pins grounded) and the biased (per Fig. 1) cases and at high dose rate
for the biased (also per Fig. 1) case. The low dose rate irradiations were followed by a biased anneal at
o
100 C for 168 hours. The low dose rate was 0.01 rad(Si)/s and the high dose rate 65 rad(Si)/s. Sample size
for each of the two low dose rate cells was 8 each, while the high dose rate cell had 19 samples. The postirradiation SMD limits are -15.0mV to +15.0mV.
7
2.52
Reference output voltage, V
G2A8CECH
2.515
Post RT
Post HT
Pre RT
2.51
2.505
2.5
LDR Bias avg
LDR Bias max
LDR GND min
HDR Bias avg
HDR Bias max
Spec limit
2.495
2.49
LDR Bias min
LDR GND avg
LDR GND Max
HDR Bias min
Spec limit
2.485
0
50
100
150
200
250
300
Total dose, krad(Si)
Fig. 6: IS-1009EH fab lot G2A8CECH reference output voltage at 1mA as a function of total dose irradiation
at low dose rate for the unbiased (all pins grounded) and the biased (per Fig. 1) cases and at high dose rate
for the biased (also per Fig. 1) case. The low dose rate irradiations were carried out to 150 krad(Si) and were
o
o
followed (see text) by a biased anneal at 25 C for 24 hours and a further biased anneal at 100 C for 168
hours. The low dose rate was 0.01 rad(Si)/s and the high dose rate 65 rad(Si)/s. Sample size for each of the
two low dose rate cells was 14 each, while the high dose rate cell had 28 samples. The post-irradiation SMD
limits are 2.490V to 2.515V.
2.515
Reference voltage, 400uA, V
G2A8CECH
Post RT
2.51
Post HT
Pre RT
2.505
2.5
2.495
LDR Bias avg
LDR Bias min
LDR Bias max
LDR GND avg
LDR GND min
LDR GND Max
HDR Bias avg
HDR Bias min
HDR Bias max
2.49
0
50
100
150
200
250
300
Total dose, krad(Si)
Fig. 7: IS-1009EH fab lot G2A8CECH reference output voltage at 400uA as a function of total dose
irradiation at low dose rate for the unbiased (all pins grounded) and the biased (per Fig. 1) cases and at high
dose rate for the biased (also per Fig. 1) case. The low dose rate irradiations were carried out to 150 krad(Si)
o
o
and were followed (see text) by a biased anneal at 25 C for 24 hours and a further biased anneal at 100 C
for 168 hours. The low dose rate was 0.01 rad(Si)/s and the high dose rate 65 rad(Si)/s. Sample size for
each of the two low dose rate cells was 14 each, while the high dose rate cell had 28 samples. This is an
informational parameter used to develop the load regulation (see Fig. 9) and is not specified in the SMD.
8
2.518
G2A8CECH
Reference voltage, 10mA, V
2.516
Pre RT
2.514
Post RT
Post HT
2.512
2.51
2.508
2.506
2.504
2.502
LDR Bias avg
LDR Bias max
LDR GND min
HDR Bias avg
HDR Bias max
2.5
2.498
LDR Bias min
LDR GND avg
LDR GND Max
HDR Bias min
2.496
0
50
100
150
200
250
300
Total dose, krad(Si)
Fig. 8: IS-1009EH fab lot G2A8CECH reference output voltage at 10mA as a function of total dose
irradiation at low dose rate for the unbiased (all pins grounded) and the biased (per Fig. 1) cases and at high
dose rate for the biased (also per Fig. 1) case. The low dose rate irradiations were carried out to 150 krad(Si)
o
o
and were followed (see text) by a biased anneal at 25 C for 24 hours and a further biased anneal at 100 C
for 168 hours. The low dose rate was 0.01 rad(Si)/s and the high dose rate 65 rad(Si)/s. Sample size for
each of the two low dose rate cells was 14 each, while the high dose rate cell had 28 samples. This is an
informational parameter used to develop the load regulation (see Fig. 9) and is not specified in the SMD.
Delta VZ, 400uA to 10mA, mV
20
G2A8CECH
15
Post RT
10
5
0
Post HT
Pre RT
-5
LDR Bias avg
LDR Bias max
LDR GND min
HDR Bias avg
HDR Bias max
Spec limit
-10
-15
LDR Bias min
LDR GND avg
LDR GND Max
HDR Bias min
Spec limit
-20
0
50
100
150
200
250
300
Total dose, krad(Si)
Fig. 9: IS-1009EH fab lot G2A8CECH load regulation, 400uA to 10mA, as a function of total dose irradiation
at low dose rate for the unbiased (all pins grounded) and the biased (per Fig. 1) cases and at high dose rate
for the biased (also per Fig. 1) case. The low dose rate irradiations were carried out to 150 krad(Si) and were
o
o
followed (see text) by a biased anneal at 25 C for 24 hours and a further biased anneal at 100 C for 168
hours. The low dose rate was 0.01 rad(Si)/s and the high dose rate 65 rad(Si)/s. Sample size for each of the
two low dose rate cells was 14 each, while the high dose rate cell had 28 samples. The post-irradiation SMD
limits are -15.0mV to +15.0mV.
9
6: Discussion and conclusion
The present tests were undertaken to determine the response of current production parts to
high and low dose rate irradiation and to evaluate the effects of the changed passivation system. A
further objective was the evaluation of post low dose rate irradiation anneals. Testing at both dose
rates of samples taken from two fabrication lots of the IS-1009EH is complete. All monitored
parameters remained within the SMD post-irradiation specifications at all downpoints, see Tables 1
and 2.
Figs. 2 through 5 show the results for fab lot DPM0JEHA. The reference voltage at 1 mA (Fig. 2)
is the key parameter and showed good stability over low dose irradiation and the subsequent HT
anneal. The response curve shows an increase of the reference voltage to the 50 krad(Si) level,
followed by a gradual decrease to the maximum dose of 150 krad(Si). The high dose rate response
showed similar behaviour, although there were considerably fewer downpoints. The HT anneal had
no effect other than tightening up the distribution somewhat.
Figs. 3 and 4 show the reference voltage at 400 µA and 10 mA; these parameters are not
specified in the SMD but are used to develop the load regulation measurement of the part. Both
parameters showed a similar response to the 1 mA case.
Fig. 5 shows the load regulation of the part. This is simply the difference between the reference
voltage at 400 µA and 10 mA, and the parameter showed good stability. The biased high dose rate
irradiation was worst case, an interesting response in an all-bipolar part.
Figs. 6 through 9 show the results for fab lot G2A8CECH. The reference voltage (Fig. 6)
showed good stability over low dose irradiation and the subsequent LT and HT anneals. The
response curve showed the same increase to the 50 krad(Si) level, followed by a gradual decrease
to the maximum dose of 150 krad(Si). The high dose rate response showed similar behaviour.
Again, the two anneals had no effect other than tightening up the distribution somewhat.
Figs. 7 and 8 show the reference voltage at 400 µA and 10 mA; both parameters showed a
similar response to the 1 mA case.
Fig. 9 shows the load regulation of the part. The parameter showed good stability, and the
biased high dose rate irradiation was again worst case.
The IS-1009EH is implemented in the Intersil EBHF process, which has historically used silicon
nitride passivation. Passivation structure, composition and deposition process have been shown to
strongly affect the hydrogen transport dynamics and hence the low and high dose rate response of
the resulting parts. The EBHF process has recently been upgraded to single-layer Silox passivation
identical to that used in the RSG process. The IS-1009EH uses silicon dioxide (‘silox’) passivation
while the earlier IS-1009RH uses silicon nitride (‘nitride’) passivation. The present results are
consistent, however, with the IS-1009EH data obtained earlier and reported [1] on the Intersil Web
site. Both parts showed little, if any, low dose rate or bias sensitivity, with the low dose rate
grounded condition marginally worst-case for some parameters.
The IS-1009EH is considered moderately low dose rate sensitive but remains well within the
SMD post-irradiation limits to a maximum of 150 krad(Si) in this environment.
10
7: Appendices
7.1: Reported parameters.
Fig.
2
3
4
5
6
7
8
9
Parameter
SMD
limit, low
SMD
limit,
high
Units
Fab lot
Reference voltage
Reference voltage
Reference voltage
Load regulation
Reference voltage
Reference voltage
Reference voltage
Load regulation
2.490
-15
2.490
-15
2.515
+15
2.515
+15
V
V
V
mV
V
V
V
mV
DPM0JEHA
DPM0JEHA
DPM0JEHA
DPM0JEHA
G2A8CECH
G2A8CECH
G2A8CECH
G2A8CECH
Notes
IZ = 1mA
IZ = 400µA
IZ = 10mA
IZ = 400µA to 10mA
IZ = 1mA
IZ = 400µA
IZ = 10mA
IZ = 400µA to 10mA
Note 1: Limits are taken from Standard Microcircuit Drawing (SMD) 5962-00523.
Note 2: Parameters shown in Figures 3, 4, 7 and 8 are for information only and are not
specified in the SMD.
8: Document revision history
Revision Date
0
January 2014
Pages
All
Comments
Original issue
9. References
[1] van Vonno, N. W., ‘Total dose testing of the IS-1009EH voltage reference’, January
2011, see http://www.intersil.com.
11