Newsletter 17-2015 TSM160P02

NEW PRODUCT
ANNOUNCEMENT
www.taiwansemi.com
TSM160P02
-20V (VDS) P-Channel MOSFET
SOP-8
The TSM160P02CS P-channel power MOSFET is a new product in Taiwan
Semiconductor’s low- to mid-voltage high performance trench power MOSFET
portfolio. The advanced trench technology is designed with lower total gate charge
requirements to improve the efficiency of load switching applications by reducing
switching losses. The TSM160P02 has a ruggedized gate for improved dV/dt
performance making it extremely versatile for advanced power management
applications.
Parameter
VDS
VGS = -4.5V
RDS(on) (max)
VGS = -2.5V
VGS = -1.8V
Id
Qg
Value
-20
16
22
28
-11
27
Features:
Applications:






 Load switching
 Networking
Improved dV/dt capability
Low gate charge for fast switching
Suitable for 1.8V drive applications
Pb-free plating
ROHS compliant
Halogen-free mold compound
ISSUE NO.17
APR 2015
Unit
V
mΩ
A
nC
NEW PRODUCT
ANNOUNCEMENT
www.taiwansemi.com
Cross Reference:
TSC
Infineon
Fairchild
Diodes Inc.
TSM160P02CS
BSO203SP
FDS6375
DMP2022LSS
Ordering & Package Information:
Ordering
P/N
TSM160P02CS RLG
(pcs)
Reel
Size
(inch)
Inner
Box
(pcs)
2,500
13
5,000
Reel
Carton
Carton Size
(pcs)
(mm)
Gross
Weight
(kg/ carton)
25,000
360x355x270
7.6
Samples of TSM160P02 can be ordered on Product Detail page:
http://www.taiwansemi.com/en/products/details/TSM160P02
For pricing and more information, please contact TSC sales or authorized distributors
worldwide:
www.taiwansemi.com/en/contact
ISSUE NO.17
APR 2015