NEW PRODUCT ANNOUNCEMENT www.taiwansemi.com TSM160P02 -20V (VDS) P-Channel MOSFET SOP-8 The TSM160P02CS P-channel power MOSFET is a new product in Taiwan Semiconductor’s low- to mid-voltage high performance trench power MOSFET portfolio. The advanced trench technology is designed with lower total gate charge requirements to improve the efficiency of load switching applications by reducing switching losses. The TSM160P02 has a ruggedized gate for improved dV/dt performance making it extremely versatile for advanced power management applications. Parameter VDS VGS = -4.5V RDS(on) (max) VGS = -2.5V VGS = -1.8V Id Qg Value -20 16 22 28 -11 27 Features: Applications: Load switching Networking Improved dV/dt capability Low gate charge for fast switching Suitable for 1.8V drive applications Pb-free plating ROHS compliant Halogen-free mold compound ISSUE NO.17 APR 2015 Unit V mΩ A nC NEW PRODUCT ANNOUNCEMENT www.taiwansemi.com Cross Reference: TSC Infineon Fairchild Diodes Inc. TSM160P02CS BSO203SP FDS6375 DMP2022LSS Ordering & Package Information: Ordering P/N TSM160P02CS RLG (pcs) Reel Size (inch) Inner Box (pcs) 2,500 13 5,000 Reel Carton Carton Size (pcs) (mm) Gross Weight (kg/ carton) 25,000 360x355x270 7.6 Samples of TSM160P02 can be ordered on Product Detail page: http://www.taiwansemi.com/en/products/details/TSM160P02 For pricing and more information, please contact TSC sales or authorized distributors worldwide: www.taiwansemi.com/en/contact ISSUE NO.17 APR 2015