NEW PRODUCT ANNOUNCEMENT www.taiwansemi.com TSM060N03 30V (VDS) N-Channel MOSFET PDFN33 The TSM060N03PQ33 N-channel power MOSFET is a new product in Taiwan Semiconductor’s low- to mid-voltage high performance trench power MOSFET portfolio. The advanced trench technology is designed with significantly lower total gate charge requirements to reduce switching losses and improve the efficiency of DC-DC converters. The PDFN33 package provides an ultra small, thermally efficient 3mm x 3mm footprint, lower RDS(on) as a function of die size, and lower cost which makes it extremely versatile for advanced and efficient surface mount applications. Parameter VDS VGS = 10V RDS(on) (max) VGS = 4.5V Id Qg Value 30 6 9 60 11.1 Unit V mΩ A nC Features: Applications: Mobile device DC-DC conversion Point of load (POL) DC-DC Secondary switch rectification 100% avalanche tested Low gate charge for fast switching Pb-free plating ROHS compliant Halogen-free mold compound ISSUE NO.15 APR 2015 NEW PRODUCT ANNOUNCEMENT www.taiwansemi.com Cross Reference: TSC Infineon Fairchild Alpha & Omega TSM060N03PQ33 BSZ058N03LS FDMC3020DC AON6816 Ordering & Package Information: Ordering P/N Reel (pcs) TSM060N03PQ33 RGG 5,000 Reel Size (inch) Inner Box (pcs) 13 10,000 Carton Carton Size (pcs) (mm) Gross Weight (kg/ carton) 50,000 183x183x710 9 Samples of TSM060N03 can be ordered on Product Detail page: http://www.taiwansemi.com/en/products/details/TSM060N03 For pricing and more information, please contact TSC sales or authorized distributors worldwide: www.taiwansemi.com/en/contact ISSUE NO.15 APR 2015