Newsletter 15-2015 TSM060N03

NEW PRODUCT
ANNOUNCEMENT
www.taiwansemi.com
TSM060N03
30V (VDS) N-Channel MOSFET
PDFN33
The TSM060N03PQ33 N-channel power MOSFET is a new product in Taiwan
Semiconductor’s low- to mid-voltage high performance trench power MOSFET
portfolio. The advanced trench technology is designed with significantly lower total
gate charge requirements to reduce switching losses and improve the efficiency of
DC-DC converters. The PDFN33 package provides an ultra small, thermally efficient
3mm x 3mm footprint, lower RDS(on) as a function of die size, and lower cost which
makes it extremely versatile for advanced and efficient surface mount applications.
Parameter
VDS
VGS = 10V
RDS(on) (max)
VGS = 4.5V
Id
Qg
Value
30
6
9
60
11.1
Unit
V
mΩ
A
nC
Features:
Applications:





 Mobile device DC-DC conversion
 Point of load (POL) DC-DC
 Secondary switch rectification
100% avalanche tested
Low gate charge for fast switching
Pb-free plating
ROHS compliant
Halogen-free mold compound
ISSUE NO.15
APR 2015
NEW PRODUCT
ANNOUNCEMENT
www.taiwansemi.com
Cross Reference:
TSC
Infineon
Fairchild
Alpha & Omega
TSM060N03PQ33
BSZ058N03LS
FDMC3020DC
AON6816
Ordering & Package Information:
Ordering
P/N
Reel
(pcs)
TSM060N03PQ33 RGG 5,000
Reel
Size
(inch)
Inner
Box
(pcs)
13
10,000
Carton
Carton Size
(pcs)
(mm)
Gross
Weight
(kg/ carton)
50,000
183x183x710
9
Samples of TSM060N03 can be ordered on Product Detail page:
http://www.taiwansemi.com/en/products/details/TSM060N03
For pricing and more information, please contact TSC sales or authorized distributors
worldwide:
www.taiwansemi.com/en/contact
ISSUE NO.15
APR 2015