1.6 MB

The following document contains information on Cypress products.
5ch System Power Management IC
for LCD Panel with VCOM Regulator
ASSP for Power Management Applications
MB39A302
Data Sheet (Full Production)
Publication Number MB39A302-DS405-00005
CONFIDENTIAL
Revision 1.1
Issue Date January 31, 2014
D a t a S h e e t
2
CONFIDENTIAL
MB39A302-DS405-00005-1v1-E, January 31, 2014
5ch System Power Management IC
for LCD Panel with VCOM Regulator
ASSP for Power Management Applications
MB39A302
Data Sheet (Full Production)
 DESCRIPTION
MB39A302 is a 5ch system power supply management IC. It consists of 1ch Buck converter, 1ch Boost
converter, 2ch charge pump, 1ch LDO, an operational amplifier for VCOM calibration and a gate voltage
shaping circuit. The Buck converter is a voltage mode asynchronous converter with integrated switching
FET. The Boost converter equips integrated switching FET with voltage mode control. It is most suitable
for large size LCD panel power supply.
 FEATURES



















Power supply voltage range (VIN=VINVL=VIN2)
Boost Converter included SW FET (Vs)
Buck Converter included SW FET (Vlogic)
Negative charge pump with output voltage feedback (VGL)
Positive charge pump with output voltage feedback (VGH)
Low dropout regulator (Vref_o)
High performance operational amplifier (VCOM)
: 8V to14V
: output 20V Max 1.5A Max
: output 1.8V to 3.3V 1.1A Max
: output current 250mA Max
: output current 250mA Max
: output current 60mA Max
: output current ±75mA Max,
20MHz Gain bandwidth
Feedback threshold voltage
: 1.25V ±1% (Vs)
: 1.25V ±1% (Vlogic)
: 0.25V ±40mV (VGL)
: 1.25V ±2% (VGH)
: 1.25V ±0.5% (Vref_o)
Built-in soft-start circuit independent of loading (Vs - programmable, Vlogic, VGL, VGH)
Excellent line regulation by the feed-forward method (Vs, Vlogic)
Built-in output over voltage protection (Vs, Vlogic)
Built-in output under voltage and short circuit protection (Vs, Vlogic, VGL, VGH)
Built-in current limit protection (Vs - programmable, Vlogic, Vref_o, OPO)
Built-in external p-channel gate control for Vs sequencing
Integrated gate voltage shaping circuitry with adjustable turn on delay
Built-in under voltage lock out protection function
Built-in over temperature protection
Selectable 500kHz/750kHz switching frequency
Package: QFN-48 Exposed PAD
 APPLICATIONS
Power supply of LCD panel for TV and monitor
Publication Number MB39A302-DS405-00005
Revision 1.1
Issue Date January 31, 2014
This document states the current technical specifications regarding the Spansion product(s) described herein. Spansion Inc. deems the products to have been in sufficient
production volume such that subsequent versions of this document are not expected to change. However, typographical or specification corrections, or modifications to the
valid combinations offered may occur.
CONFIDENTIAL
D a t a S h e e t
 PIN ASSIGNMENTS
DLY1
FBP
VGH
VGHM
DRN
SUPN
DRVN
GND
FBN
REF
VREF_FB
VREF_O
(TOP VIEW)
48 47 46 45 44 43 42 41 40 39 38 37
VREF_I 1
36 DRVP
VOP 2
35 CPGND
OGND 3
34 SUPP
OPP 4
33 THR
OPN 5
32 COMP
OPO 6
31 FB1
XAO 7
30 GD
GVOFF 8
29 GD_I
EN 9
28 PGND
FB2 10
27 PGND
OUT 11
26 LX1
GND 12
25 LX1
SS
CLIM
FSEL
VL
INVL
VDET
GND
IN2
IN2
BST
LX2
LX2
13 14 15 16 17 18 19 20 21 22 23 24
(LCC-48P-M11)
2
CONFIDENTIAL
MB39A302-DS405-00005-1v1-E, January 31, 2014
D a t a S h e e t
 PIN DESCRIPTION
Block
Vs
(Boost
DC/DC)
Vlogic
(Buck
DC/DC)
VGL
(Negative
Charge
Pump)
VGH
(Positive
Charge
Pump)
Gate
Voltage
Shaping
Vref_o
(LDO)
VCOM
(OPAMP)
Misc.
Control
Pin
Pin No.
Pin
Name
23
24
25
26
CLIM
SS
LX1
LX1
29
GD_I
I
30
31
32
10
11
13
14
15
42
43
45
46
36
34
GD
FB1
COMP
FB2
OUT
LX2
LX2
BST
SUPN
DRVN
FBN
REF
DRVP
SUPP
O
I
O
I
I
External isolation PMOS source terminal connection and VGH
supply pin
External isolation PMOS gate terminal connection pin
Boost converter Error Amp input pin
Boost converter frequency compensation pin
Buck converter Error Amp input pin
Buck converter regulated output sense pin
O
Buck converter inductor connection pin
I/O
O
O
I
O
O
O
38
FBP
I
39
40
41
8
VGH
VGHM
DRN
GVOFF
I
I/O
I/O
I
33
THR
I
37
47
48
4
5
6
21
7
9
19
22
DLY1
VREF_FB
VREF_O
OPP
OPN
OPO
VL
XAO
EN
VDET
FSEL
I
I
O
I
I
O
O
O
I
I
I
January 31, 2014, MB39A302-DS405-00005-1v1-E
CONFIDENTIAL
I/O
Description
I
I
Boost converter current limit setting pin
Boost converter soft start timing control pin
O
Boost converter inductor connection pin
Buck converter gate drive boot pin
VGL power supply decoupling capacitor connection pin
VGL external pumping capacitor connection pin
VGL Error Amp input pin
Reference voltage output pin
VGH external pumping capacitor connection pin
VGH power supply decoupling capacitor connection pin
VGH Error Amp input pin
Gate shaping circuit high voltage input pin
Gate voltage shaping circuit output pin
Gate voltage shaping discharge slope adjustment pin
Gate voltage shaping circuit control pin
Gate voltage shaping circuit output lower limit control pin
(10xTHR)
Time delay control pin for gate voltage shaping circuit
LDO feedback input pin
LDO output pin
VCOMP OPAMP non-inverting input pin
VCOMP OPAMP inverting input pin
VCOMP OPAMP output pin
Internal 5.2V regulator output pin
Open drain output of power supply detection circuit
5.2V rated Boost converter enable pin
Power supply detection input pin
Switching frequency select pin
3
D a t a S h e e t
Block
Pin No.
Pin
Name
Power
1
2
16
17
20
27
28
35
44
3
12
18
VREF_I
VOP
IN2
IN2
INVL
PGND
PGND
CPGND
GND
OGND
GND
GND
4
CONFIDENTIAL
I/O
I
I
I
I
I
-
-
Description
VREF LDO supply pin
VCOMP OPAMP supply pin
Buck converter and VGL power supply pin
Buck converter and VGL power supply pin
Common and Internal 5.2V regulator supply pin
High Current Boost Ground pin
VGH Ground pin
Analog ground pin
VCOM OPAMP ground pin
Analog ground pin
Analog ground pin
MB39A302-DS405-00005-1v1-E, January 31, 2014
D a t a S h e e t
 I/O PIN EQUIVALENT CIRCUIT DIAGRAM
January 31, 2014, MB39A302-DS405-00005-1v1-E
CONFIDENTIAL
5
D a t a S h e e t
6
CONFIDENTIAL
MB39A302-DS405-00005-1v1-E, January 31, 2014
D a t a S h e e t
 BLOCK DIAGRAM
January 31, 2014, MB39A302-DS405-00005-1v1-E
CONFIDENTIAL
7
D a t a S h e e t
 FUNCTIONAL DESCRIPTIONS
CH1 (Vs): Boost Converter
The Boost converter features fixed frequency pulse width modulated (PWM) control with integrated NMOS
power switch. The switching frequency can be set to either 500 kHz or 750 kHz via the FSEL pin. The
converter operates as an asynchronous Boost converter with external Schottky diode. The use of voltage
mode control with input feed forward improves line regulation performance. In addition, the converter is
designed with external frequency compensation that allows flexibility on selecting external component
values. A PMOS switch with on resistance of 18Ω connects between LX1 and GD_I pin so that it operates
in parallel with the external Schottky diode. At high loading current, most of the inductor current flows
through the external Schottky diode. At light load, the PMOS switch provides a conduction path that allows
the inductor current flow in reverse direction. As a result, the converter stays in continuous conduction
mode for most of the load current range and allows the use of simple frequency compensation scheme.
Soft Start (Boost Converter)
The build in soft start circuit limits the inrush current at start up. The soft start cycle starts after EN is
asserted and the duration can be set by user through the capacitor connected to SS pin.
(1) When SS pin capacitor value > 220pF, soft start time is set externally. Charging current is 5μA and
trigger threshold is 1.25V.
(2)
When SS pin capacitor value < 220pF or SS pin is open, soft start time is fixed internally at 10ms.
Protection (Boost Converter)
The Boost converter has built in over voltage protection to prevent MB39A302 from being damaged due to
excessive voltage stress under fault conditions such as FB1 pin is left floating or short to ground. The
protection circuitry monitors the Boost converter output via GD_I pin and shut down the NMOS power
FET that connects to LX1 pin when the voltage on GD_I pin is higher than 21.5V. As a result, the inductor
current starts to fall and the output of the Boost converter follows. The Boost converter resumes normal
operation when the voltage at GD_I pin falls below the protection threshold.
The Boost converter has built in under voltage protection and short circuit protection to prevent MB39A302
from damage due to low voltage stress under fault conditions. The protection circuitry monitors the Boost
converter output via FB1 pin and the Under Voltage Protection activates when the voltage on FB1 pin is
lower than 1V and the NMOS power FET will be shut down after 50ms. The Short Circuit Protection will
activate when the voltage of FB1 pin is lower than 0.5V and the NMOS power FET will be shut down
immediately.
In addition, Boost converter has programmable over current protection that turns off the power FET to
prevent excessive output current from damaging internal IC and external components.
Gate Drive Pin (GD)
GD pin voltage is pulled down by 10µA (Typ) internal current source after EN pin is asserted. The external
PMOS turns on and connects the cathode of the Boost converter Schottky catch diode to the Boost
converter load capacitors when GD falls below the turn-on threshold of the external PMOS. When VGD
reaches VGD_I-6V, the Boost converter regulator is enabled and initiates a soft-start routine. Startup SCP
protection is included to protect external PMOS from permanent damage in the event that Boost output is
initially shorted to GND upon power up. When not using this feature, leave GD high impedance and
connect GD_I to the output of the Boost converter.
CH2 (Vlogic): Buck Converter
The Buck converter is a fixed frequency PWM control asynchronous converter with integrated NMOS
power switch. It features voltage mode control with input feed forward to improve line regulation
performance. The main switch of the converter is a 3.2A rated power NMOS with gate drive circuit
reference to LX2 pin (source terminal of the NMOS power FET). The gate drive circuit is powered from an
internal 5V regulator and is bootstrapped from LX2 pin via an external capacitor to achieve driving
capability beyond the supply rail.
8
CONFIDENTIAL
MB39A302-DS405-00005-1v1-E, January 31, 2014
D a t a S h e e t
Soft Start (Buck Converter)
The build in soft start circuit limits the inrush current at start up. The soft start cycle start after power supply
is asserted and the duration is internally set to 3ms.
Protection (Buck Converter)
The Buck converter has built in over voltage protection to prevent MB39A302 from being damaged due to
excessive voltage stress under fault conditions such as FB2 pin is left floating or short to ground. The
protection circuitry monitors the Buck converter output voltage via OUT pin and shut down the NMOS
power FET that connects to LX2 pin when the voltage on OUT pin is higher than 3.7V. As a result, the
inductor current starts to fall and the output of the Buck converter follows. The Buck converter resumes
normal operation when the voltage at OUT pin falls below the protection threshold.
The Buck converter has built in under voltage protection and short circuit protection to prevent MB39A302
from damage due to low voltage stress under fault conditions. The protection circuitry monitors the Buck
converter output voltage via FB2 pin and the Under Voltage Protection activates when the voltage on FB2
pin is lower than 1V and the NMOS power FET will be shut down after 50ms. The Short Circuit Protection
will activate when the voltage of FB2 pin is lower than 0.5V and the NMOS power FET will be shut down
immediately.
In addition, Buck converter has over current protection that turns off the power FET to prevent excessive
output current from damaging internal IC and external components.
CH3 (VGL): Negative Charge Pump
The negative charge pump uses fixed switching frequency controlled architecture. The output voltage is set
externally by a resistor divider. Regulation is done by controlling the pump current in the driver. The charge
pump uses external diodes, pumping capacitor and output filter capacitor. Since the input of the charge
pump and the driver is connected to the supply pin (VIN), the maximum negative output voltage is -VIN
+Vloss. Vloss includes voltage drop in external diodes and gate driver. Additional charge pump stage can be
added to generate larger negative voltage.
Protection (Negative Charge Pump)
The negative charge pump has built in under voltage protection and short circuit protection. The protection
circuitry monitors the charge pump output voltage via FBN pin and the Under Voltage Protection activates
when the voltage on REF-FBN pin is lower than 0.8V and the power FETs will be shut down after 50ms.
The Short Circuit Protection will activate when the voltage of REF-FBN pin is lower than 0.4V and the
power FETs will be shut down immediately.
CH4 (VGH): Positive Charge Pump
The positive charge pump uses fixed switching frequency controlled architecture. The output voltage is set
externally by a resistor divider. Regulation is done by controlling the pump current in the driver. The
charge pump uses external diodes, pumping capacitor and output filter capacitor. The input of the charge
pump is connected to the VS (Boost converter output) and the pump capacitor is charged to VS during
charging phase. As the supply to the driver (SUPP pin) can be either the VS (Boost converter output) or the
VIN (Power supply) of MB39A302, the maximum output voltage is VSUPP + VS - Vloss. Vloss includes
voltage drop in external diodes and gate driver. Additional charge pump stage can be added to increase the
maximum output voltage.
Protection (Positive Charge Pump)
The positive charge pump has built in under voltage protection and short circuit protection. The protection
circuitry monitors the charge pump output voltage via FBP pin and the Under Voltage Protection activates
when the voltage on FBP pin is lower than 1V and the power FETs will be shut down after 50ms. The Short
Circuit Protection will activate when the voltage of FBP pin is lower than 0.5V and the power FETs will be
shut down immediately.
January 31, 2014, MB39A302-DS405-00005-1v1-E
CONFIDENTIAL
9
D a t a S h e e t
CH5 (Vref_o): Low Dropout regulator (LDO)
The integrated low noise low drop out regulator (LDO) is available with 60mA current capability. It has
built in over current protection circuit to prevent the LDO from being damaged under fault conditions. This
LDO can be stable with 1μF to 10μF output ceramic capacitor.
CH6 (OPO): VCOM Operational Amplifier
The integrated low input offset voltage operational amplifier (OP Amp) is available with ±75mA current
capability. It can be stable with 3Ω to 10Ω load resistor in series with 1μF to 150μF output capacitor. There
is also built in over current protection to prevent this amplifier from being damaged under fault conditions.
Gate Voltage Shaping
The ability to control the falling edge of the gate drive signal is essential for reduction of flicking on LCD
display. The gate voltage shaping circuit provides timing and slew rate control for the gate drive signal and
an isolation switch to protect circuit powered from VGH.
Upon initial startup, VGHM output stays low until after XAO is released (pulled low), VGH reached power
good and the capacitor on DLY1 pin past 1.25V. Then, VGHM would be dictated by the logic level on
GVOFF and the cut threshold dictated by THR pin voltage. After this, if XAO is pulled low, then VGH and
VGHM are shorted together as long as there is enough supply voltage to maintain the circuit operation.
XAO
XAO is an open-drain output that externally connects through a resistor to Vlogic. Upon startup, XAO
follow VLOGIC output. When VLOGIC and VGL reaches 90% of its final output, XAO control is passed
to VDET pin. When VDET sense that VIN is below desired voltage (defined by external resistor divider),
XAO is pulled low immediately.
Common Block
Under Voltage Lockout Protection
MB39A302 will shutdown when the supply voltage below 6V to prevent improper operation of the device.
Over Temperature Protection
When the junction temperature rises above +150°C, most of the active circuitries are shutdown to prevent
damage from excessive power dissipation beyond safety limits.
10
CONFIDENTIAL
MB39A302-DS405-00005-1v1-E, January 31, 2014
D a t a S h e e t
 Power Up Sequencing
January 31, 2014, MB39A302-DS405-00005-1v1-E
CONFIDENTIAL
11
D a t a S h e e t
 Power Down Sequencing
12
CONFIDENTIAL
MB39A302-DS405-00005-1v1-E, January 31, 2014
D a t a S h e e t
 ABSOLUTE MAXIMUM RATINGS
Parameter
Power supply voltage
Symbol
VDD
VBOOT
AVDD
VLV_IN
Input/Output voltage
SW voltage
SW peak current
Power dissipation
Storage temperature
VLV_OUT
VHV_IN
VGL_OUT
VGH_OUT
VGH
VGS
VREFO
VOPP
VOPN
VOPO
SUPN
VGD
VLX
VLX
ILX
ILX
PD
TSTG
Condition
IN2, INVL
BST
SUPP, VREF_I, VOP
CLIM, SS, FB1, FB2, FBN,
FBP, GVOFF, THR, DLY1,
VREF_FB, EN, VDET, OUT
COMP, REF, XAO, VL
FSEL
DRVN
DRVP
VGH
VGHM, DRN
VREF_O
OPP
OPN
OPO
SUPN
GD, GD_I
LX1
LX2
LX1 AC
LX2 AC
Ta ≤ +85°C
-
Rating
Unit
Min
Max
-0.3
-0.3
-0.3
+20
+25
+25
V
V
V
-0.3
+5.5
V
-0.3
-0.3
-0.3
-0.3
-0.3
-0.3
-0.3
-0.3
-1
-1
-0.3
-0.3
-0.3
-2
-55
+5.5
+20
+20
+25
+40
+40
+20
+25
+25
+25
+20
+25
+25
+20
4.2
3.9
1.51
+125
V
V
V
V
V
V
V
V
V
V
V
V
V
V
A
A
W
°C
*: When mounted on a 100mm ×100 mm: 4 layer (2S2P JEDEC).
θja: 26.5°CW-1, θjc: 0.5°CW-1
WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current,
temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings.
January 31, 2014, MB39A302-DS405-00005-1v1-E
CONFIDENTIAL
13
D a t a S h e e t
 RECOMMENDED OPERATING CONDITIONS
Parameter
Power supply voltage
Symbol
Condition
VIN
VBOOT
VSUP
VSS
VTHR
VILIM
IN2, INVL, SUPN
BST
SUPP, VREF_I, VOP
SS, DLY1
THR
CLIM
FB1, FB2, FBN, FBP,
VREF_FB, OUT
GD, GD_I
EN, GVOFF
FSEL
VGH
OPP, OPN
VDET
VS: Boost DC/DC
VLOGIC: Buck DC/DC
VGL
VGH, VGHM
VREF_O: LDO
(Io = 1mA to 60mA)
OPO: Opamp
(Io = 1mA to 25mA)
XAO
VS: BOOST DC
VLOGIC: BUCK DC
VGL DC
DRN pin Peak
VGH DC
Vref DC: VREF_O
VCOMP DC: OPO
VCOMP AC: OPO
GD
GD_I (light load)
DRVN
DRVP
REF
LX1
LX2
BST
SUPP
VFB
Input voltage
VGD
VEN
VFSEL
VGH
VCOM
VXAO
VO1
VO2
VO3
VO4
Output voltage
VO5
VO6
Output current
REF pin output current
SW inductor
BOOT pin capacitor
SUPP pin capacitor
GD pin capacitor
DRP, DRN pins capacitor
SUPN pin capacitor
REF pin capacitor
VL pin capacitor
14
CONFIDENTIAL
VOX
IO1
IO2
IO3
IO4
IO4
IO5
IO6
IO6
IGD
IGDI
IDRVN
IDRVP
IREF
LX1
LX2
CBOOT
CSUPP
CGD1,
CGD2
CDRV
CSUPN
CREF
CVL
Min
Value
Typ
8
12*1
8
0
0
0
Max
Unit
-
14
19
20
5
5
5
V
V
V
V
V
V
0
-
5
V
0
0
0
0
0
0
20
5
20
37
20
3.7
-
17.7
3.3
-5.5
30
-
V
V
V
V
V
V
V
V
V
V
-
17
-
V
-
7.5
-
V
0
0
0
0.1
5
1.5*2
1.1
0.25*3
0.1
0.25*4,*5
60
75
200
-
V
A
A
A
A
A
mA
mA
mA
µA
mA
mA
mA
µA
µH
µH
µF
µF
-0.25
0.5
-75
-200
-100
-500
-500
-50
10
100
500
500
0
-
6.8
10
0.10
1
GD
-
10
-
µF
DRVP, DRVN
SUPN
REF
VL
-
0.47
1
1
1
-
µF
µF
µF
µF
0.01
1.00
MB39A302-DS405-00005-1v1-E, January 31, 2014
D a t a S h e e t
Parameter
Symbol
Condition
Min
Value
Typ
Max
Unit
CINVL INVL
1
μF
INVL pin capacitor
CVREFI VREFI
1
μF
VREFI pin capacitor
CVOP
1
μF
VOP pin capacitor
VOP
IN2 pin capacitor
CIN2
10
40
70
µF
IN2
CLIM pin resistor
RCLIM CLIM
60
kΩ
VS output filter capacitor
Cout1
60
µF
VS: Boost DC/DC
VLOGIC output filter capacitor
Cout2
µF
2×10
VLOGIC: Buck DC/DC
VGL output filter capacitor
Cout3
1
20
µF
NCP
VGH output filter capacitor
Cout4
0.47
10.00
µF
PCP
VGHM output capacitor
Cscan
1
1000
nF
In series with Rscan
LDO output filter capacitor
Cout5
1
4.7
10
µF
VREF_O: LDO
VCOMP output filter capacitor
Cout6
1
10
150
µF
In series with Rout
VGHM output resistance
Rscan
1.61
kΩ
VGHM
VGHM output resistance
Rdrn
200
3000
Ω
DRN
VCOMP output filter resistance
Rout6
3
10
Ω
In series with Cout
Charge/Discharge cycle frequency
Fscan
40
70
kHz
Discharge duration
Tdscan
1
10
µs
Operating ambient temperature
Ta
-30
+25
+85
°C
*1: Performance is guaranteed for 12V±10%
*2: Maximum current is only guaranteed if OCP is not triggered. ILIM> Vo1 × Io1max/VIN + VIN ×
(Vo1-VIN) /L/fosc/Vo1/2
For: VIN=8V, Iomax=1A, VIN=10V, Iomax=1.2A, VIN ≥ 12V, Iomax=1.5A
*3: Maximum current is only guranteed if VIN-|Vo3|>Rdsonmax (Hiside + Loside) × 2 × Imax + 2 × Vdiode +
Imax / (fosc × Cpump) (for doubler).
For Vo3 = -5.5V: VIN>12V, Iomax=250mA, VIN=10V, Iomax=150mA, VIN=8V, Iomax=80mA
*4: Maximum current is only guaranteed if 2 × Vo1 - Vo4 > Rdsonmax (Hiside + Loside) × 2 × Imax + 2 ×
Vdiode + Imax/(fosc × Cpump) (for doubler).
For Vo1=17.7V: Iomax=150mA
*5: Maximum current is only guaranteed if VIN+2 × Vo1 - Vo4 > Rdsonmax (Hiside + Loside) × 4 × Imax + 4 ×
Vdiode + 3 × Imax/(fosc × Cpump) (for Tripler)
WARNING: The recommended operating conditions are required in order to ensure the normal operation of the
semiconductor device. All of the device's electrical characteristics are warranted when the device is
operated within these ranges.
Always use semiconductor devices within their recommended operating condition ranges.
Operation outside these ranges may adversely affect reliability and could result in device failure.
No warranty is made with respect to uses, operating conditions, or combinations not represented on
the data sheet. Users considering application outside the listed conditions are advised to contact
their representatives beforehand.
January 31, 2014, MB39A302-DS405-00005-1v1-E
CONFIDENTIAL
15
D a t a S h e e t
 ELECTRICAL CHARACTERISTICS
(Ta=0°C to +85°C, VIN=IN2=INVL=12V, SUPP=VREF_I=VOP=17.7V.
Typical values are at Ta=+25°C unless noted otherwise)
Parameter
REF Block
[REF]
Under
Voltage
Lockout
Protection
Circuit
Block
[UVLO]
Over
Temperature
Protection
Block
[OTP]
Control
Block
[CTL]
Symbol
REF output
REF
voltage
REF load
REF
regulation
INVL UVLO
UVLOIN
threshold
INVL
INHYS
hysteresis width
VL UVLO
UVLOVL
threshold
VL hysteresis
VLHYS
width
Stop
TOTPH
temperature
Hysteresis
width
Input voltage
threshold
EN pulldown
resistance
FSEL pullup
current
46
0<IREF<50µA
16,17
21
VL=
21
-
8,9,22
T junction
-
EN, GVOFF, FSEL
ON
EN, GVOFF, FSEL
8,9,22
OFF
REN
9
EN
IFSEL
22
FSEL
INVL + IN2
standby current
ISB
Oscillator
Block
[OSC]
Output
frequency
fosc
VL
Regulator
[VL]
VL output
voltage
VL load
regulation
General
Min
INVL=
16,17
VIH
IQ
CONFIDENTIAL
IREF=0mA
-
VIL
Condition
46
TOTPHYS
INVL + IN2
quiescent
current
16
Pin
FB1 = FBP = 1.5V,
16,17, FBN = 0, EN = VL,
20
FSEL = H (Only LX2
switching)
FB1 = FB2 =
FBP = 1.5V,
16,17, FBN = 0,
20
EN = VL,
FSEL = H
(No switching)
13, 14 FSEL = "H"
25, 26
36, 43 FSEL = "L"
VL
21
IL = 0mA
VL
21
0 < IVL < 30mA
Value
Typ Max
Unit
-2%
1.25
+2%
V
-
-
15
mV
5.3
6
6.7
V
-
0.5
-
V
3
3.4
3.8
V
-
0.5
-
V
-
150*
-
°C
-
20*
-
°C
2
-
-
V
-
-
0.9
V
-
800
-
kΩ
1.4
2.4
4.0
µA
-
5
-
mA
-
4
-
mA
630
750
870
kHz
420
500
580
kHz
4.9
5.2
5.5
V
-
-
300
mV
MB39A302-DS405-00005-1v1-E, January 31, 2014
D a t a S h e e t
(Ta=0°C to +85°C, VIN=IN2=INVL=12V, SUPP=VREF_I=VOP=17.7V.
Typical values are at Ta=+25°C unless noted otherwise)
Parameter
Line regulation
Load regulation
Threshold
voltage
Input bias
current
SW NMOS-Tr
On resistance
SW PMOS-Tr
On resistance
VS
[Boost
DC/DC]
Symbol
Pin
Condition
Vline1
Vload1
29,34
29,34
VIN=10.8V to 13.2V
Io1= 150mA to 1.5A
VTH1
31
IB1
31
RON1
RON1
SW PMOS-Tr
Leak current
ILEAK1
29
SW NMOS-Tr
Leak current
ILEAK1
25,26
ILIM1
25,26
Vuvp1
31
Td,uvp1
-
Vovp1
34
Vscp1
Output OCP
threshold
Output UVP
threshold
Output UVP
delay time
Output OVP
threshold
Output SCP
threshold
Soft-start time
GD clamp
voltage
GD discharge
current
Tss1
Unit
-1
-
0.15
+1
%/V
%/A
FB1
-1%
1.25
+1%
V
FB1 =0V
-100
0
100
nA
-
120
185
mΩ
-
18
36
Ω
-
-
10
µA
-
-
10
µA
LX1=500mA
VGS=5V
GD_I=-200mA
VGS=5V
EN=0V
GD_I=15V
LX1=0V
EN=0V
LX1=15V
LX1,
RCLIM > 60kΩ
A
1
1.04
V
42
50
58
ms
SUPP
21
21.5
22
V
31
FB1
0.4
0.5
0.6
V
3.8
5
6
µA
24
SS: CSS>220pF
SS charge current
SS: CSS<220pF
V(GD)-V(GD_I)>
4V to 95% VO1
-
10
-
ms
V(GD) - V(GD_I)
-7
-6
-5
V
GD
4
10
16
µA
29,30
IGD1
30
FB1
2.83.54.260.5kΩ/ 60.5kΩ/ 60.5kΩ/
RCLIM RCLIM RCLIM
0.96
VGD1
January 31, 2014, MB39A302-DS405-00005-1v1-E
CONFIDENTIAL
25, 26
27, 28
25,26,
29
Min
Value
Typ Max
-
17
D a t a S h e e t
(Ta=0°C to +85°C, VIN=IN2=INVL=12V, SUPP=VREF_I=VOP=17.7V.
Typical values are at Ta=+25°C unless noted otherwise)
Parameter
Vlogic
[Buck
DC/DC]
VGL
[Negative
Charge
Pump]
18
CONFIDENTIAL
Bootstrap
output
Threshold
voltage
Input Bias
current
SW NMOS-Tr
(upper)
On resistance
SW NMOS-Tr
(upper)
Leak current
OUT to GND
switch
on resistance
Output OVP
threshold
Output UVP
threshold
Output UVP
delay time
Output OCP
threshold
Output SCP
threshold
Load regulation
Line regulation
Soft-start time
Threshold
voltage
Input bias
current
SW NMOS-Tr
On resistance
SW PMOS-Tr
On resistance
Output UVP
threshold
Output UVP
delay time
Output SCP
threshold
Soft start up
time
Symbol
Pin
VBST
15
FB2=5V
VTH2
10
IB2
10
RON2
ILEAK2
Condition
Min
Value
Typ Max
Unit
-
4.5
-
V
FB2
-1%
1.25
+1%
V
FB2=0V
-100
0
+100
nA
-
200
300
mΩ
-10
-
-
µA
13,14, LX2=0.2A
16,17 VGS=5V
13,14,
LX2=0V
16,17
ROUT
11
OUT
70
125
210
kΩ
Vovp2
11
OUT DC
3.5
3.7
3.9
V
Vuvp2
10
FB2
0.96
1.00
1.04
V
Td, uvp2
-
42
50
58
ms
2.2
3.2
3.9
A
0.4
0.5
0.6
V
-
3
0.5
0.1
-
%/A
%/V
ms
ILIM2
-
13, 14 LX2
Vscp2
10
FB2
Vload2
Vline2
Tss2
11
11
10
Io2=150mA to 1.1A
VIN: 10.8 to 13.2V
0 to 99% VO2
VTH3
45
FBN
210
250
290
mV
IB3
45
FBN=0V
-100
0
+100
nA
RON3
43, 44 Iout=100mA
-
1.5
3
Ω
RON3
42, 43 Iout=100mA
-
3.5
7
Ω
Vuvp3
45,46
0.768
0.800
0.832
V
Td, uvp3
-
42
50
58
ms
Vscp3
45,46
0.3
0.4
0.5
V
Tss3
45
-
3
-
ms
REF-FBN
REF-FBN
0% to 95% VO3
MB39A302-DS405-00005-1v1-E, January 31, 2014
D a t a S h e e t
(Ta=0°C to +85°C, VIN=IN2=INVL=12V, SUPP=VREF_I=VOP=17.7V.
Typical values are at Ta=+25°C unless noted otherwise)
Parameter
VGH
[Positive
Charge
Pump]
Threshold
voltage
GD_I input
supply current
Input bias
current
SW NMOS-Tr
On resistance
SW PMOS-Tr
On resistance
Output UVP
threshold
Output UVP
delay time
Output SCP
threshold
Soft start up
time
Symbol
Pin
VTH4
38
FBP
IGDI
29
FBP = 1.5V
(not switching)
IB4
38
FBP=0V
RON4
RON4
CONFIDENTIAL
25, 26
Iout=100mA
27, 28
25, 26
Iout=100mA
27, 28
Vuvp4
38
Td,uvp4
-
Vscp4
45,46
Tss4
38
January 31, 2014, MB39A302-DS405-00005-1v1-E
Condition
FBP
FBP
90% VO1 to 95%
VO4
Min
Value
Typ Max
Unit
-2%
1.25
+2%
V
-
0.4
-
mA
-100
0
+100
nA
-
1.5
3
Ω
-
3.5
7
Ω
0.96
1
1.04
V
42
50
58
ms
0.4
0.5
0.6
V
-
3
-
ms
19
D a t a S h e e t
(Ta=0°C to +85°C, VIN=IN2=INVL=12V, SUPP=VREF_I=VOP=17.7V.
Typical values are at Ta=+25°C unless noted otherwise)
Parameter
VGHM
[Gate
Voltage
Shaping]
VGH supply
current
Rdson charge
Rdson
discharge
VGHM to
ground
discharge
resistance
GVOFF to
VGHM rise
propagation
delay
GVOFF to
VGHM fall
propagation
delay
DLY1 charge
current
DLY1 voltage
threshold
39
Min
Value
Typ Max
Unit
GVOFF=0V
-
0.1
-
mA
Rchg5
39, 40 Ichg=100mA
-
5
10
Ω
Rdis5
40, 41 Idischg=100mA
-
20
50
Ω
10
14
20
kΩ
-
60
120
ns
-
280
500
ns
Rvghm
40
DLY1=GND,
VGHM=1V
RDRN=1k,
VGHM noload,
GVOFF rising edge to
VGHM×0.2
RDRN=1k,
VGHM noload,
GVOFF falling edge
to VGHM×0.8
Tfall
8,40
Idly1
37
-
6
8
10
µA
Vdly1
37
-
1.19
1.25
1.31
V
Vslide5
33
RDRN=1kΩ,
Rscan=1.6kΩ,
Cscan=1.3nF
9.4
10
10.6
V/V
VDET
19
VDET
1.275
1.300
1.325
V
VDEThyst
19
VDET
-
50
-
mV
VXAO5
7
-
-
0.4
V
IXAO
7
-
-
100
nA
IREFI
1
-
0.15
-
mA
Line regulation
Vline5
48
-
0.02
-
%
Load regulation
Threshold
voltage
Drop out
voltage
Vload5
48
VDET = GND,
IXAO = 1mA
VDET=1.5V,
VXAO=3.3V
No load,
open loop, VFB=1.5V
VREF_I=
13.5V to 20V
Io=1mA to 30mA
-
0.3
-
%
VTH5
47
VREF_FB
- 0.5%
1.25
+ 0.5%
V
Vload5
48
-
-
500
mV
-
40
(50kHz)
50
(500/
750kHz)
-
dB
60
100
150
mA
PSRR
Output SCP
protection
current
CONFIDENTIAL
IVGH
Condition
8,40
VDET
threshold
voltage
VDET
hysteresis
VDET output
voltage
VDET output
current
VREF_I
supply current
20
Pin
Trise
Slider Stop
Voltage
VREF
[LDO]
Symbol
PSRR5
48
Iscp5
48
IO=60mA
VREF_I=VREF_O
f=50KHz/
500KHz/750kHz,
Io=10mA, 30mA,
VREF_I=Vo5+0.7V,
Reference to VREF_I
VREF_O = 0V
MB39A302-DS405-00005-1v1-E, January 31, 2014
D a t a S h e e t
(Ta=0°C to +85°C, VIN=IN2=INVL=12V, SUPP=VREF_I=VOP=17.7V.
Typical values are at Ta=+25°C unless noted otherwise)
Parameter
Symbol
Pin
VOP supply
current
IVOP
2
Line regulation
Vline6
6
Load regulation
Vload6
6
Vdrop6
6
Vdrop6
6
Dropout
voltage
(sinking)
Dropout
voltage
(sourcing)
VCOM
[VCOMP
OPAMP]
Buffer configuration,
OPP=OPN=VOP/2,
no load
VOP
13.5V to 20V,
OPP=7.5V
IOP
1mA to 75mA,
OPP=7.5V
Min
Value
Typ Max
Unit
-
3
-
mA
-
0.02
-
%/V
-0.4
-
+0.4
%
IOP=-10mA
40
90
180
mV
IOP=+10mA
40
90
180
mV
-
10
-
MHz
-
20
-
MHz
-
60
-
dB
-15
-
+15
mV
Unit gain
configuration
Ro=10Ω,
Co=0.1µF,Io=75mA,
OPP=6V
Unit gain
configuration
Ro=10Ω, Co=0.1µF,
Io=-75mA, OPP=6V
f=50KHz/
500KHz/750kHz,
Io6=10mA,100mA
dynamic or
Io6=30mA
static, VOP=8V,
reference to VOP
Unit gain
bandwidth
(sourcing)
fu66
6
Unit gain
bandwidth
(sinking)
fu66
6
PSRR6
6
Vos6
4, 5
Vslew6
-
Ro=10Ω, Co=0.1µF,
OPP from 6V ↔ 8V
-
40
-
V/µs
Iscp6
6
OPO
-
±200
-
mA
PSRR
Input offset
voltage
Slew rate
Output short
circuit current
*: Standard design value
January 31, 2014, MB39A302-DS405-00005-1v1-E
CONFIDENTIAL
Condition
OPO = 6 to 9V
21
D a t a S h e e t
 TYPICAL CHARACTERISTICS
Boost Converter (Vs)
Efficiency vs. Load Current
Output Voltage vs. Load Current
100
18.3
Output Voltage (V)
500 kHz
95
Efficiency (%)
90
750 kHz
85
80
75
70
18.0
750 kHz
17.7
17.4
65
500 kHz
60
17.1
55
0
0.5
50
1
1.5
2
Load Current (A)
0
0.5
1
Load Current (A)
1.5
Load Transient Response
(Switching Load Current=0.1A to 1.1A)
L=6.8µH, Freq=750 kHz
Load Transient Response
(Pulsed Load Current=0.1A to 1.9A)
L=6.8µH, Freq=750 kHz
Heavy Load Soft-start
(Load Current=0.5A)
ILIM1 (ILpeak) vs. RCLIM
L=6.8µH, CSS =22nF
ILIM1 (ILpeak) (A)
4.0
3.5
750 kHz
3.0
500 kHz
2.5
2.0
OPEN
200
100
50
RCLIM (kΩ)
22
CONFIDENTIAL
MB39A302-DS405-00005-1v1-E, January 31, 2014
D a t a S h e e t
Buck Converter (Vlogic)
Efficiency vs. Load Current
Output Voltage vs. Load Current
90
3.45
Efficiency (%)
80
Output Voltage (V)
500 kHz
85
750 kHz
75
70
65
60
3.39
500 kHz
3.33
3.27
750 kHz
3.21
55
3.15
50
0
0.5
1
1.5
Load Current (A)
0.5
1
1.5
Load Current (A)
Load Transient Response
Heavy-load Soft-start
(Switching Load Current=0.3A to 1.8A)
(Load Current=1A)
L=10µH, Freq=750 kHz
L=10µH, Freq=750kHz
January 31, 2014, MB39A302-DS405-00005-1v1-E
CONFIDENTIAL
0
23
D a t a S h e e t
Negative Charge-pump (VGL)
Normalized Line Regulation
Output Voltage vs. Load Current (VIN = 12V)
0.10%
2.0
1.5
Output Voltage Erorr (%)
VGL Error (%)
0.05%
IVGL=0mA
0.00%
IVGL=25mA
-0.05%
-0.10%
8
10
12
14
1.0
0.5
0
-0.5
-1.0
-1.5
16
SUPN Voltage (V)
-2.0
0
50
100
150
200
250
Load Current (A)
Load Transient Response
Positive Charge-pump (VGH)
Normalized Line Regulation
(Switching Load Current=10mA to 60mA)
2
VGH Error (%)
1
Io=0A
0
Io=25mA
-1
-2
12
13
14
15
16
17
SUPP Voltage (V)
18
Positive Charge-pump (VGH)
Load Transient Response
Output Voltage vs. Load Current
(Switching Load Current = 10mA to 60mA)
Output Voltage Error (%)
2.0
1.5
1.0
0.5
0
-0.5
-1.0
-1.5
-2.0
0
50
100
150
Load Current (mA)
24
CONFIDENTIAL
MB39A302-DS405-00005-1v1-E, January 31, 2014
D a t a S h e e t
Low Dropout regulator (LDO)
Line Regulation (Load Current=20mA)
Output Voltage vs. Load Current
17.4
18
16
Output Voltage (V)
17.2
Output Voltage (V)
14
17.0
16.8
16.6
17
10
8
6
4
2
18
17.5
12
0
VREF_I Voltage (V)
0
50
100
150
Load Current (mA)
Op-amp (VCOM)
Output Voltage vs. Load Current (Source)
Output Voltage vs. Load Current (Sink)
19
Output Voltage (V)
8
Output Voltage (V)
6
4
2
15
13
11
9
7
0
0
50
100
150
200
250
Load Current (mA)
Rail-to-rail Input / Output Waveforms
January 31, 2014, MB39A302-DS405-00005-1v1-E
CONFIDENTIAL
17
0
-50
-100 -150 -200
Load Current (mA)
-250
Load Transient Response
25
D a t a S h e e t
Large-signal Step Response
Small-signal Step Response
Switching Frequency vs. Input Voltage
Power-up Sequence of All Supply Outputs
800
Frequency (kHz)
775
750
725
700
8
10
12
14
Input Voltage Vin (V)
16
Gate Voltage Shaping (VGHM)
(VGHM with 470pF Load)
26
CONFIDENTIAL
MB39A302-DS405-00005-1v1-E, January 31, 2014
D a t a S h e e t
Switching Frequency vs. Input Voltage
VIN Supply Current vs. VIN Voltage
7
INVL Current (mA)
Frequency (kHz)
800
775
750
725
700
8
10
12
14
16
Input Voltage Vin (V)
All Output Swicthing
6
5
4
Buck Output Swicthing
3
2
No Output Swicthing
1
0
8
10
12
14
16
Input Voltage (V)
Reference Voltage Load Regulation
1.270
Reference Voltage (V)
1.265
1.260
1.255
1.250
No Switching
1.245
1.240
1.235
Switching
1.230
0
50
100
150
Load Current (uA)
200
January 31, 2014, MB39A302-DS405-00005-1v1-E
CONFIDENTIAL
27
D a t a S h e e t
Power Dissipation PD (W)
Power Dissipation vs Operating Ambient Temperature
Operating Ambient Temperature Ta (°C)
28
CONFIDENTIAL
MB39A302-DS405-00005-1v1-E, January 31, 2014
D a t a S h e e t
 SETUP
1. Setting Control Pin
Pin
IN2, INVL
EN
Channels
Vlogic: Buck Converter
VGL: Negative Charge Pump
VS: Boost Converter
VGH: Positive Charge Pump
VREF_O: LDO
OPO: VCOMP OP
Standby
operating
L
>6V
L
H
2. Setting Switching Frequency
Pin
Setting
Internal oscillator frequency
FSEL
H/Float
L
750kHz
500kHz
3. Protection Circuitry
(1) IC
Under voltage lock out protection: VIN ≤ 6V, all circuits shut down
Over temperature protection: Junction Temp > +150°C, all circuits shut down
(2) VS: Boost converter
Over voltage protection: GD_I pin ≥ 21.5V, protection circuit active
Over current protection: threshold value is set by user
Short circuit protection: FB1 pin voltage < 1V for 50ms or FB1 pin voltage < 0.5V, protection circuit active.
Boost, VGH, VGL are turned off (stop switching) immediately. External GDFET open.
Startup short circuit protection: If VS short to ground before power on, IC would trigger protection as VIN
is pulled low and disable all channels immediately
(3) VLOGIC: Buck converter
Over voltage protection: OUT > 3.7V, protection circuit active
Over current protection: ILX2 > 3.2A, protection circuit active
Short circuit protection: FB2 pin voltage < 1V for 50ms or FB2 pin voltage < 0.5V, protection circuit active.
Buck, Boost, VGH, VGL are turned off (stop switching) immediately. External GDFET open.
(4) VGL: Negative Charge Pump
Short circuit protection: REF-FBN voltage < 0.8V for 50ms or REF-FBN voltage < 0.4V, protection circuit
active. Boost, VGH, VGL are turned off (stop switching) immediately. External GDFET open.
(5) VGH: Positive Charge Pump
Short circuit protection: FBP pin voltage < 1V for 50ms or FBP pin voltage < 0.5V, protection circuit active.
Boost, VGH, VGL are turned off (stop switching) immediately. External GDFET open.
Power down: When XAO is pulled low, VGHM is shorted to VGH internally.
(6) VREF_O: LDO
Short current protection: Io > 100mA, protection circuit active.
(7) VCOM: VCOMP OP
Over current protection: Io > 200mA, protection circuit active.
January 31, 2014, MB39A302-DS405-00005-1v1-E
CONFIDENTIAL
29
D a t a S h e e t
 APPLICATION NOTE
Boost Converter Design
 Boost Converter Block Diagram
Output voltage selection
The Boost converter output voltage VS can be set by external resistor divider as below:
VS=1.25 × (1+
R3
R4
)
Feedback resistor
Resistor values R3 and R4 do not have direct impact on compensation. However, to minimize noise pickup
on FB1 without degrading light load efficiency, it is recommended that the equivalent values be set around
100kΩ.
Compensation (COMP) Capacitor Selection
The regulator compensation is adjusted by an external component connected to the COMP-pin. This pin is
the output of internal trans-conductance error amplifier. By adding a resistor in series will change the
internal zero to achieve a stable mid-frequency gain. The formula below give the frequency (Fz) at which
the resistor increases the high-frequency gain.
FZ =
1
2 × π × CC × (RC+115k)
For 6.8μH inductor & 60μF output capacitor, we recommend using Cc=680pF and Rc=30kΩ, resulting in
fz = 1.5kHz.
30
CONFIDENTIAL
MB39A302-DS405-00005-1v1-E, January 31, 2014
D a t a S h e e t
Over current protection selection
The Over current protection for the Boost converter limits the maximum switching current ISWMAX. The
current limit value can be programmed by an external resistor RCLIM.
ILIM1=3.5 -
60.5k
RCLIM
When RCLIM is open, the OCP will set to ILIM1=3.5A. It is recommended that RCLIM be > 60kΩ.
Peak inductor current
It is necessary to verify the maximum output current of this converter whether it meets the application
requirements. The efficiency of the Boost converter can be read from the graph or employ a worst-case
assumption of 80%.
Duty cycle: D=1-
Vin × η
Vs
Maximum output current: ISmax = (1-D) × (ISWLIM =
Vin
Vs
× (ISWLIM -
Peak switching/inductor current: ISWMAX =
Vin × D
2 ×fosc × L
Vin × D
2 ×fosc × L
Vin × D
2 × fosc × L
+
)
)
ISmax
1-D
Where
D = Duty cycle
fosc = Switching frequency [Hz] (500kHz or 750kHz)
L = Inductor value [H]
η = Estimated Boost converter efficiency (typically 80% minimum)
ISWLIM = Minimum switch current limit of LX1-pin [A] (= 2.8A)
ISmax = Maximum output current possible under minimum switch current limit of LX1-pin [A]
The selected components, including the embedded switch, the inductor and external Schottky Diode must
be able to handle the peak switching current. The estimation should be based on the minimum input voltage,
since the switching current will be the highest in this case.
Inductor Selection
Typical inductor value is 6.8μH. When selects the inductor, chooses an inductor that has saturation current
higher than the peak switch current (ISWMAX) as calculated below. Extra margin is required to cope with high
current transients. A more conservative design is to use the maximum SW current limit of 4.2A as saturation
current rating of inductor. Another parameter for choosing inductor is the DC resistance. Usually, lower the
DC resistance can result in higher converter efficiency.
January 31, 2014, MB39A302-DS405-00005-1v1-E
CONFIDENTIAL
31
D a t a S h e e t
Rectifier Diode Selection
Schottky diode should be used to attain high efficiency. The reverse voltage rating of the diode must be
higher than the maximum output voltage of the converter. The required averaged rectified forward current
of the Schottky diode is the product of off-time of Boost converter and the maximum switch current at LX1
pin. The peak rectifier forward current is the same as inductor peak current, Iswmax, determined above.
Off-time of Boost converter: D’=1-D =
Vin
Vs
Average rectifier forward current: IDmax = Ismax × D’
The rectifier diode selected must have average current rating exceeding IDmax and repetitive peak current
rating exceeding Iswmax. A Schottky diode with maximum rectified forward-current of 2A should be
sufficient for most applications. Another requirement for Schottky diode is the power dissipation. The
power dissipation can be calculated from the formula below:
PD = IDMAX × VF = (1-D) × (ISWLIM -
Vin × D
2 × fosc × L
) ×VF
Where
PD = Power dissipation of the diode [W]
VF = Diode forward voltage [V]
ISWLIM = Minimum over current protection of LX1-pin [A] (3A)
Output Capacitor Selection
Capacitors with low ESR are recommended. Ceramic capacitor which has low ESR is particularly suitable
for this purpose. Typically, six 10µF ceramic capacitors connected in parallel are placed at the converter
output. More capacitance can be added so as to reduce voltage drop during heavy load transients.
Soft Start Capacitor Selection
SS pin capacitor is used for defining the soft start time of Boost converter. The Boost converter soft start
time, Tss, is determined by the user when SS pin capacitor value, Css, is higher than 220pF. And the Boost
converter soft start time is determined internally when SS pin capacitor value is lower than 220pF or SS pin
is open and fixed at 10ms.
CSS ≤ 220pF
CSS > 220pF
32
CONFIDENTIAL
TSS = 10ms
TSS = CSS × 1.25/5u
MB39A302-DS405-00005-1v1-E, January 31, 2014
D a t a S h e e t
Buck Converter Design
 Buck Converter Block Diagram
Output voltage selection
The Buck converter output voltage Vlogic can be set by external resistor divider as below:
Vlogic = 1.25× (1+
R1
R2
)
Softstart
Internal preset.
The soft start starts after internal POR and UVLO checks are completed and the duration is set to 3ms.
Rectifier Diode Selection
Schottky diode should be used to attain high efficiency. The reverse voltage rating of the diode must be
higher then the maximum output voltage of the converter. The required averaged rectified forward current
of diode is the product of off-time of Buck converter and the maximum switch current at SWB pin.
Off-time of Buck converter: D' = 1-
Vout
Vin
= 1-D
Maximum output current: Iavg = (1-D) × ISWLIM = (1-
Vin
Vout
) × ISWLIM
A Schottky diode with maximum rectified forward-current of 1.5A to 2A should be sufficient for most of
applications. The diode forward voltage should be less than 0.7V in order to prevent damage to IC. Another
requirement for Schottky diode is the power dissipation. The power dissipation can be calculated from the
formula below:
PD = Iavg × VF = (1 - D) × ISWLIM × VF
January 31, 2014, MB39A302-DS405-00005-1v1-E
CONFIDENTIAL
33
D a t a S h e e t
Where
PD = Power dissipation of the diode [W]
VF = Diode forward voltage [V]
ISWLIM = Minimum over current protection of SWB-pin [A] (2.5A)
Feedforward capacitor selection
A feed forward capacitor (Cff1) is added parallel to the upper resistor (R1). The Cff1 sets a zero in the
transfer function. This will improve the load transient response and stabilize the converter loop. The value
of Cff1 is depending on the value of output inductor and capacitor used.
For 10µH inductor & 20µF output capacitor, a double pole, fLC, is formed at 11 kHz. For stability, a zero, fz,
is recommended to be placed at approximately 70% of fLC = 8 kHz;
Cff =
1
2 × π × R1 × fZ
=
1
2 × π × 2kΩ × 8kHz
= 9.9nF ≈ 10nF
A capacitor value close to the calculated value is chosen.
A small capacitor to ground, Cfb2, can be added to FB2 node to filter out high frequency noise on the FB2
node. Ensure the low pass filtering pole formed by this R2 and Cfb2 is >> 200 kHz to not impact system
stability.
Inductor Selection
Typical inductor value is 10μH. The current flow through the inductor must be below the saturation current
rating of the inductor. The maximum current flowing through the inductor can be found from the following
formula:
ILMAX ≥ IOMAX +
ΔIL =
Vin - Vout
L
ΔIL
2
×
Vout
Vin × fosc
Where:
ILMAX = Maximum current through inductor [A]
IOMAX = Maximum load current [A]
ΔIL = Inductor ripple current peak-to-peak value [A]
Vin = Input voltage [V]
Vout = Output voltage [V]
fosc = Switching frequency [Hz] (500kHz or 750kHz)
34
CONFIDENTIAL
MB39A302-DS405-00005-1v1-E, January 31, 2014
D a t a S h e e t
Bootstrap Capacitor Selection
Bootstrap capacitor connected to BST pin is charged by integrated synchronous diode with 4.5V internal
supply. Ceramic capacitor is recommended for less leakage current.
0.1µF bootstrap capacitor is recommended for Buck converter in MB39A302. The bootstrap capacitor
voltage rating is suggested to be higher than input voltage.
Output Capacitor Selection
This IC is designed to work best with ceramic output capacitor. Two 10μF ceramic output capacitors are
recommended for most application. More capacitance can be added so as to reduce voltage drop during load
transients.
Negative Charge Pump Design
 Negative Charge Pump Block Diagram
Output Voltage Selection
Recall from functional description, the maximum negative output voltage is - VDRN + 2Vdiode ideally,
which is -12V + 0.8V = -11.2V. Similar to Positive Charge Pump, the regulated output voltage can be set by
equation below:
VGL= 0.25 -
R5
R6
Pumping Capacitor and Output Capacitor Selection
Selection of pumping capacitor and output capacitor are similar to Positive Charge Pump design.
For -5V output, ΔVDRN = |-VGL|-Vdiode = 5V - 0.4V = 4.6V. The pumping capacitor and output filtering
capacitor can be estimated for required application.
The minimum pumping capacitor is determined by following equation.
C≥
Iout
f × ΔVDRN
,
Where:
Iout = The output current
f = Switching frequency (750kHz/500kHz)
ΔVDRN = Pumping clock voltage
The charge stored on pumping capacitor is transferred to output capacitor cycle-by-cycle. Output capacitor
determines output ripple voltage of charge pump. The ripple voltage is estimated by:
Vripple =
Iout
2f × Cout
+ Iout × ESRCout
January 31, 2014, MB39A302-DS405-00005-1v1-E
CONFIDENTIAL
35
D a t a S h e e t
Where:
Cout=Output filtering capacitance
ESRCout = Equivalent series resistance of output filtering capacitor
A small capacitor, Cfbl, can be added between FBN and REF node to filter out high frequency noise on the
FBN node. A 22pF capacitor is suitable for most applications.
Positive Charge Pump Design
 Positive Charge Pump Block Diagram
D
29
<< CH4 (Positive Charge Pump) >>
R7 FBP
38
R8
Cfbp
L priority
Error
Amp4
1.25V
enb4
Current
Control
Logic
Vth
(1.25V±2%)
Ron=(4Ω
at
VGS=5V)
DRV
SUPP
34
B
DRVP
36
Ron=(1Ω
at VGS=5V)
CPGND
35
D
VGH
(30.2V/250mA)
timer
ppg
Clk
1V
0.5V
1.1V
Output Voltage Selection
Theoretically, the maximum output voltage is the sum of input voltage and pumping clock voltage of a
charge pump. In MB39A302, the maximum output voltage is VS (Boost converter output voltage) +
VSUP - 2Vdiode which is 17.7V + 17.7V – 2 (0.4V) = 34.6V with typical setting. Due to the regulated
voltage control, the output voltage can be configured by equation below:
VGH = Vref × (1+
36
CONFIDENTIAL
R7
R8
) = 1.25 × (1+
R7
R8
)
MB39A302-DS405-00005-1v1-E, January 31, 2014
D a t a S h e e t
Pumping Capacitor and Output Capacitor Selection
Ceramic capacitor is recommended for its non-polarized, more stable over temperature, low leakage and
small ESR. Choosing a pumping capacitor should consider the required voltage rating and output current
loading. For 30.2V output voltage setting, the pumping clock voltage is calculated below.
ΔVDRP = VGH - VS + Vdiode = 30.2V - 17.7V + 0.4V = 12.9V
The minimum pumping capacitor is determined by following equation.
Iout
C≥
f × ΔVDRP
,
Where:
Iout = The output current
f = Switching frequency (750kHz/500kHz)
ΔVDRP = Pumping clock voltage
The charge stored on pumping capacitor is transferred to output capacitor cycle-by-cycle. Output capacitor
determines output ripple voltage of charge pump. The ripple voltage is estimated by:
Iout
Vripple =
+ Iout × ESRCout
2f × Cout
Where:
Cout = Output filtering capacitance
ESRCout = Equivalent series resistance of output filtering capacitor
A small capacitor, Cfbp, can be added between FBP and GND node to filter out high frequency noise on the
FBP node. A 22pF capacitor is suitable for most applications.
Low Dropout Regulator Design (LDO)
 Low Dropout Regulator Block Diagram
<<CH5 (LDO)>>
E
R9
Current
sense
Vth
1.25V±0.5%
Error
Amp5
VREF_FB
47
B
VREF_I (Vs)
1
Drive r
R10
E
VREF_O
48
1.25V
VREF
(17V/60mA)
MB39A302 includes a voltage regulator (Low Dropout Regulator, LDO) to supply the Gamma Buffer with
a very stable voltage. The LDO is designed to operate typically with a 4.7μF ceramic output capacitor (any
value between 1μF and 10μF works properly) and a ceramic bypass capacitor of minimum 1μF on its input
VREF_I connected to ground. The output of the Boost converter VS is usually connected to the input
VREF_I. The LDO has an internal soft-start feature to limit the inrush current.
Output voltage selection
The Boost converter output voltage can be set by external resistor divider as below:
Vref_o = 1.25 × (1+
R9
R10
)
January 31, 2014, MB39A302-DS405-00005-1v1-E
CONFIDENTIAL
37
D a t a S h e e t
VCOM Operational Amplifier
 VCOM Operational Amplifier Block Diagram
The operational amplifier use Vs for power supply, to get better performance and smaller output noise, a
1μF filter ceramic capacitor should be placed between VOP and GND. The input pin OPP can either feed by
a resistor divider from VREFO or an external voltage reference. This operational amplifier is optimized to
drive the LCD backplane (VCOM), so it is not stable to drive a pure capacitor load, but series a 3 to 10 Ω
small resistor with the load capacitor will provide the stable operation.
VGHM: Gate Voltage Shaping
 Gate Voltage Shaping Block Diagram
XAO
7
Rdt
VDET
<< Gate Voltage Shaping >>
19
VGH
Rdb
1.25V
GVOFF
VGH
39
8
CH4pg
DLY1
37
Control
Logic
VGHM
VGHM
40
1k
1.25V
DRN
41
THR
33
Clamp
DLY1 Capacitor Selection
Refer to "Power Up Sequence" section, GateShape block power up sequence timing is set by capacitor at
DLY1 pin. The delay capacitor can be estimated by following equation.
Cdelay =
8μA × tdelay
Vref
Where:
tdelay = Delay time
Cdelay = Capacitor connected to DLY1-pin
Vref = 1.25V
38
CONFIDENTIAL
MB39A302-DS405-00005-1v1-E, January 31, 2014
D a t a S h e e t
XAO
The XAO threshold, VINpg, can be set via a VIN resistive divider connecting to on the VDET pin.
If we select Rdb in the 10kΩ to 50kΩ range, then Rdt can be determined as:
Rdt
Rdb
=
VINpg
1.25V
-1
where VINpg is the desired XAO threshold level. Note that Rdt and Rdb should be placed close to the IC.
XAO pin is open drain. Please ensure it is pull up to 3.3V or 5.2V supply.
VDET pin threshold voltage is 1.25V typically. When using Gate voltage shaping and XAO output, please
set 1.25V <VDET < 3.7V.
When not using Gate voltage shaping and XAO output, please set VDET pin to ground.
Others
Input capacitor Selection
It is recommended to use low ESR capacitor like ceramic capacitor for the input filtering. For INVL
terminal, a 1µF capacitance connected from INVL to ground is needed. For the Buck converter, use
typically four 10µF and one 0.1uF ceramic capacitors connected from IN2 pin to ground.
Output capacitor Selection
Similarly, ceramic capacitors are recommended. For VL pin, a 1µF capacitance connected from VL to
ground is recommended. For REF pin, a 1µF capacitance connected from VL to ground is recommended.
PCB Layout Recommendation
PCB layout is significant for power supply design. Poor layout would result in generating unwanted voltage
and current spikes. This will not only affect DC output voltage, but also radiate EMI to adjacent equipment.
Sufficient grounding and minimize parasitic inductance can reduce DC/DC converter switching spike noise.
January 31, 2014, MB39A302-DS405-00005-1v1-E
CONFIDENTIAL
39
TP16
GND
TP6
VCOM
TP21
OPO
RP61
EVM3ESX50BE3
C60 0.1uF/25V/10%
R22
0R/0603/1%
R56
TP10
GVOFF
R1 1K/0603/1%
5
R60 0R/0603/1% OP_IN-
R21
C62 1uF-150uF/20V/10%
R20
NC
C24 10uF/25V/10%
C23 10uF/25V/10%
TP18
GND
D2
R4
0R/0805/1%
R5 62K/0603/1%
VIN
GND
VIN
VIN
R11 200K/0603/1%
TP8
VIN
FB2
OUT
R26 NC C26 NC
MB39A302
TP12
GND
TP2
VO2(Vlogic)
VLOGIC
L2 10uH
R24 0R/0603/1%
JP1
12
11
EN
GVOFF
XAO
OPO
OPN
OPP
OGND
VOP
VREF
C32
22pF/50V/5%
C71
R8
3
2
1
JP2
LX1_1
LX1_2
PGND_1
PGND_2
GD_I
GD
FB1
COMP
THR
SUPP
CPGND
DRVP
25
26
27
28
29
30
31
32
33
34
35
36
VGH
TP7
VGHM
TP17
GND
LX1
L1 6.8uH
R7 0R/0603/1%
AVDD_FB
TP14
GND
D1
MBRA340T3
C17
NC
C16
10nF/50V/10%
680 pF /50V/10%
C40
1uF/50V/10%
C7 NC
R17 30.9K/0603/1%
C15
C41
0.47uF/25V/10%
AVDD_THR
C70
10nF/50V/10%
1.5nF/50V/5% 1.61K/0603/1%
VGH_FB R78 0R/0603/1%
C11
C21
10nF/50V/10%
0R/0603/1%
R3
10
9
8
7
OP_OUT 6
4
OP_GND 3
OP_IN+
VLOGIC R2 0R/0603/1%
VL
1
U1
27.4R/0603/1%
R53 0R/0603/1% OP_VCC 2
R54 0R/0603/1% LDO_IN
VO1(Vs)
TP20
REF
R55
TP4
VO4(VGH)
C80 10uF/25V/10%
C22
68pF/50V/10%
C53 NC
R63 10K/0603/1%
TP22
XAO
VLOGIC
R62 10R/1206/1%
R51
10.5K/0603/1% 806R/0603/1%
R50
MBR0540T1
D31
C81 10uF/25V/10%
19.6R/0603/1% 1.2K/0603/1% 2K/0603/1%
R23
TP9
OPP_IN
VREF R65 0R/0603/1%
TP15
GND
TP5
LDO(VREF)
R61
15.8K/0603/1%
1
2
3
49
PGND
VREF
LX2_1
TP13
GND
VREF_O
48
604K/0603/1%
VREF_FB
47
LX2_2
0R/0603/1%
REF
46
BST
MBR0540T1
D30
FBN
45
IN2_1
42
R32
IN2_2
44
GND2
41
R31
DRVN
43
AGND
R64
19.6K/0603/1%
13
C61 1uF/50V/10%
14
C50
10uF/25V/10%
15
C55
0.1uF/25V/10%
16
C54
1uF/50V/10%
17
LDO_OUT
18
C51 NC
SUPN
10uF/25V/10%
VDET
10uF/25V/10%
39
C35
VGH
C34
C33 1uF/50V/10%
VGHM
47K/0603/1%
37
R34
R35
0R/0603/1%
38
C31 0.47uF/25V/10%
FSEL
C30 1uF/50V/10%
19
D41 MBR0540T1
22
1.5K/1206/1%
FBP
R33
105K/0603/1%
C46
0.47uF/25V/10%
LDO_+5V_VCC 20
R73
40
1.5K/1206/1%
R72
DRN
R74 NC
INVL
R75 NC
VL
R76 NC
4
3
2
1
R12
0R/0805/1%
5
G
D1 6
S3
D2 7
S2
D3 8
S1
D4
AM4835P
TP19
VBST
Q1
Default X2
X2
D42
MBR0540T1
VIN
JP3
Q2
AO3403/NC
D40
MBR0540T1
X3
VO1(Vs)
D43
MBR0540T1
VLOGIC
0R/0603/1%
R45
C44 22pF/50V/5%
20.5K/0603/1%
R42
VGH_FB
VO1(Vs)
R71
R79
340K/0603/1% 9.76K/0603/1% 120R/0603/1%
AVDD_THR
0R/0603/1%
R13
TP1
VO1(Vs)
TP11
GND
LX1
C47 0.47uF/25V/10%
R41
475K/0603/1%
R44 NC
3
2
1
R40
0R/0603/1%
R43 0R/0603/1%
C45
0.47uF/25V/10%
VLLDO_+5V 21
R77 NC
DLY1
CONFIDENTIAL
R46
47K/0603/1%
CLIM
C43 NC
SS
C42
1uF/50V/10%
R70
Current Limit 23
AVDD_FB
C18 NC
24
40
VGH
TP3
VO3(VGL)
D a t a S h e e t
 CIRCUIT DIAGRAM
MB39A302 EVB-01 Rev2.0
R14
R15
R16
392K/0603/1% 29.4K/0603/1% 383R/0603/1%
R19 47K/0603/1%
C86 10uF/25V/10%
C85 10uF/25V/10%
C84 10uF/25V/10%
C83 10uF/25V/10%
C82 NC
C14 10uF/25V/10%
C13 10uF/25V/10%
C12 10uF/25V/10%
R18 NC C19 NC
22nF/50V/10%
C52 1uF/50V/10%
C2 1uF/16V/10%
R52 0R/0603/1%
R6 10K/0603/1%
C20 0.1uF/25V/10%
C1 0.1uF/25V/10%
MBRA340T3
C6 10uF/25V/10%
R25 47K/0603/1%
C5 10uF/25V/10%
C25 NC
C4 10uF/25V/10%
C3 10uF/25V/10%
MB39A302-DS405-00005-1v1-E, January 31, 2014
D a t a S h e e t
Part List
Count
Designator
1
U1
4
C1, C20,
C55, C60
1
C2
18
C3, C4, C5,
C6, C12, C13,
C14, C23, C24,
C34, C35, C50,
C80, C81, C83,
C84, C85, C86
1
C11
1
C15
2
C16, C21
1
C22
7
5
2
1
1
1
2
6
3
Item Specification
IC, Power supply of
LCD panel
1608, 10%, X7R,
50V, 100nF
1608, 20%, X5R,
16V, 1µF
3216, 10%, X5R,
25V, 10µF
1608, 10%, X7R,
50V, 22nF
1608, 5%, NPO, 50V,
680pF
1608, 10%, X7R,
50V, 10nF
1608, 5%, NPO, 50V,
68pF
C30, C33,
3216,10%,X7R,50V,
C40, C42, C52,
1µF
C54, C61
C31, C41, C45, 3216,10%,X7R,50V,
C46, C47
470nF
1608,5%,NPO,50V,
C32, C44
22pF
3216,10%,X7R,50V,
C62
1µF
1608,10%,X7R,50V,
C70
10nF
1608,10%,X7R,50V,
C71
1.5nF
Diode, Schottky
D1, D2
Rectifier, 3A, 40V
D30, D31,
Diode, Schottky,
D40, D41,
500mA, 40V
D42, D43
JP1, JP2, JP3
Jumper
Inductor, SMT, 4.4A,
35mΩ
Inductor, SMT, 4.4A,
35mΩ
Part Value
Package
Part number
Vendor
Description
MB39A302
QFN-48
MB39A302
Spansion
Power IC
0.1µF
0603
CC0603KRX7R9BB104
Yageo
Capacitor
1µF
0603
CC0603KRX5R7BB105
Yageo
Capacitor
10µF
1206
CC1206KKX5R8BB106
Yageo
Capacitor
22nF
0603
CC0603KKX7R9BB223
Yageo
Capacitor
680pF
0603
CC0603JRNPO9BN681
Yageo
Capacitor
10nF
0603
CC0603KRX7R9BB103
Yageo
Capacitor
68pF
0603
CC0603JRNPO9BN680
Yageo
Capacitor
1µF
1206
CC1206KKX7R9BB105
Yageo
Capacitor
0.47µF
1206
CC1206KKX7R9BB474
Yageo
Capacitor
22pF
0603
CC0603JRNPO9BN220
Yageo
Capacitor
1µF
1206
CC1206KKX7R9BB105
AVX
TanCapacitor
10nF
0603
CC0603KRX7R9BB103
Yageo
Capacitor
1.5nF
0603
CC0603KRX7R9BB152
Yageo
Capacitor
MBRA340T3G
SMA-403
D
MBRA340T3
OnSemi
Diode
MBR0540T1G
SOD-123
MBR0540T1G
OnSemi
MBR0540T1G
-
HDR1X3
Standard
-
HEADER1X3
6.8µH
10.3×10.5
SDCS104R-6R8
Chilisin
Inductor
10µH
10.3×10.5
SDCS104R-100
Chilisin
Inductor
1
L1
1
L2
1
Q1
MOSFET P-ch
AM4835P
SO-8
AM4835P
Analog
Power
MOSFET P-ch
1
RP61
Potentiometer,chip,
1%
EVM3ESX50BE3
Standard
EVM3ESX50BE3
Panasonic
Potentiometer
1
R1
Resistor, Chip, 1%
1K
0603
RC0603FR_1KL
Yageo
Resistor
8
R2, R35, R43,
R53, R54, R60,
R65, R78
Resistor, Chip, 1%
0R
0603
RC0603FR_0RL
Yageo
Resistor
1
R5
Resistor, Chip, 1%
62K
0603
RC0603FR_62KL
Yageo
Resistor
2
R6, R63
Resistor, Chip, 1%
10K
0603
RC0603FR_10KL
Yageo
Resistor
1
R8
Resistor, Chip, 1%
1.61K
0603
RC0603FR_1K61L
Yageo
Resistor
1
R11
Resistor, Chip, 1%
200K
0603
RC0603FR_200KL
Yageo
Resistor
1
R14
Resistor, Chip, 1%
392K
0603
RC0603FR_392KL
Yageo
Resistor
1
R15
Resistor, Chip, 1%
29.4K
0603
RC0603FR_29K4L
Yageo
Resistor
1
R16
Resistor, Chip, 1%
383R
0603
RC0603FR_383RL
Yageo
Resistor
1
R17
Resistor, Chip, 1%
30.9K
0603
RC0603FR_30K9L
Yageo
Resistor
4
R19, R25,
R34, R46
Resistor, Chip, 1%
47K
0603
RC0603FR_47KL
Yageo
Resistor
January 31, 2014, MB39A302-DS405-00005-1v1-E
CONFIDENTIAL
41
D a t a S h e e t
Count
Designator
Item Specification
Part Value
Package
Part number
Vendor
Description
1
R21
Resistor, Chip, 1%
2K
0603
RC0603FR_2KL
Yageo
Resistor
1
R22
Resistor, Chip, 1%
1.2K
0603
RC0603FR_1K2L
Yageo
Resistor
1
R23
Resistor, Chip, 1%
19.6R
0603
RC0603FR_19R6L
Yageo
Resistor
1
R32
Resistor, Chip, 1%
604K
0603
RC0603FR_604KL
Yageo
Resistor
1
R33
Resistor, Chip, 1%
105K
0603
RC0603FR_105KL
Yageo
Resistor
1
R41
Resistor, Chip, 1%
475K
0603
RC0603FR_475KL
Yageo
Resistor
1
R42
Resistor, Chip, 1%
20.5K
0603
RC0603FR_20K5L
Yageo
Resistor
1
R45
Resistor, Chip, 1%
0R
0603
RC0603FR_0RL
Yageo
Resistor
1
R50
Resistor, Chip, 1%
10.5K
0603
RC0603FR_10K5L
Yageo
Resistor
1
R51
Resistor, Chip, 1%
806R
0603
RC0603FR_806RL
Yageo
Resistor
1
R55
Resistor, Chip, 1%
27.4R
0603
RC0603FR_27R4L
Yageo
Resistor
1
R61
Resistor, Chip, 1%
15.8K
0603
RC0603FR_15K8L
Yageo
Resistor
1
R62
Resistor, Chip, 1%
10R
1206
RC1206FR_10RL
Yageo
Resistor
1
R64
Resistor, Chip, 1%
19.6K
0603
RC0603FR_19K6L
Yageo
Resistor
1
R70
Resistor, Chip, 1%
340K
0603
RC0603FR_340KL
Yageo
Resistor
1
R71
Resistor, Chip, 1%
9.76K
0603
RC0603FR_9K76L
Yageo
Resistor
2
R72, R73
Resistor, Chip, 1%,
1/4W
1.5K
1206
RC1206FR_1K5L
Yageo
Resistor
1
R79
Resistor, Chip, 1%
120R
0603
RC0603FR_120RL
Yageo
Resistor
Connecting pins
-
-
-
-
Pins
Connecting pins
-
-
-
-
Test Pad
-
-
-
-
-
Capacitor
10µF
1206
CC1206KKX5R8BB106
Yageo
Capacitor
1µF
1206
CC1206KKX7R9BB105
Yageo
Capacitor
Resistor, Chip, 1%
0R
0603
RC0603FR_0RL
Yageo
Resistor
-
-
-
-
-
Resistor
Resistor, Chip, 1%
1.5K
1206
RC1206FR_1K5L
Yageo
Resistor
MOSFET P-ch
AO3403
sot23
AO3403
Alpha &
Omega
MOSFET P-ch
-
-
-
-
-
-
-
-
-
-
-
-
TP1, TP2, TP3,
TP4, TP5, TP6,
TP7, TP8, TP9,
TP10, TP11,
19
TP12, TP13,
TP14, TP15,
TP16, TP17,
TP18, TP19
TP20, TP21,
3
TP22
Not
C7, C17, C18,
Mounted C19, C26, C53
Not
C25, C51, C82
Mounted
Not
C43
Mounted
Not
R3, R44
Mounted
Not
R18, R26
Mounted
Not
R74, R75, R76,
Mounted
R77
Not
Q2
Mounted
Pattern
R4, R12
Short
R7, R13, R20,
Pattern
R24, R31, R40,
Short
R52, R56
3216, 10%, X5R,
25V, 10µF
3216, 10%, X7R,
50V, 1µF
Spansion: Spansion Inc.
Yageo: YAGEO Corporation
AVX: AVX Corporation
OnSemi: ON Semiconductor
Chilisin: Chilisin Electronics Corp.
AnalogPower: Analog Power
Panasonic: Panasonic Corporation
Alpha & Omega: Alpha & Omega Semiconductor
42
CONFIDENTIAL
MB39A302-DS405-00005-1v1-E, January 31, 2014
D a t a S h e e t
 LAND PATTERN
The MB30A302 has an exposed thermal pad zone on the bottom side of the IC. This area has to be
soldered onto the PCB board to enhance heat dissipation.
The via should be placed in the thermal pad. These via assist heat dissipation towards the bottom layer of
the PCB. Via and copper pad size may be adjusted according to PCB constraints.
January 31, 2014, MB39A302-DS405-00005-1v1-E
CONFIDENTIAL
43
D a t a S h e e t
 USAGE PRECAUTION
1. Never use setting exceeding maximum rated conditions.
Semiconductor devices can be permanently damaged by application of stress (voltage, current,
temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings.
2. Use the devices within recommended conditions
It is recommended that devices be operated within recommended conditions.
Exceeding the recommended operating condition may adversely affect devices reliability.
Nominal electrical characteristics are warranted within the range of recommended operating
conditions otherwise specified on each parameter in the section of electrical characteristics.
3. Design the ground line on printed circuit boards with consideration of common impedance.
4. Take appropriate static electricity measures.
Containers for semiconductor materials should have anti-static protection or be made of conductive
material.
After mounting, printed circuit boards should be stored and shipped in conductive bags or containers.
Work platforms, tools, and instruments should be properly grounded.
Working personnel should be grounded with resistance of 250 kΩ to 1 MΩ between body and ground.
5. Do not apply negative voltages.
The use of negative voltages below -0.3 V may activate parasitic transistors on the device, which can
cause abnormal operation.
44
CONFIDENTIAL
MB39A302-DS405-00005-1v1-E, January 31, 2014
D a t a S h e e t
 ORDERING INFORMATION
Part number
Packege
MB39A302WQN
48-pin plastic QFN
(LCC-48P-M11)
Remarks
 EV BOARD ORDERING INFORMATION
EV board number
EV board version No.
Remarks
MB39A302-EVB-01
MB39A302 EVB-01 Rev1.2
QFN-48 Exposed PAD
January 31, 2014, MB39A302-DS405-00005-1v1-E
CONFIDENTIAL
45
D a t a S h e e t
 RoHS COMPLIANCE INFORMATION OF LEAD (Pb) FREE VERSION
The LSI products of Spansion with “E1” are compliant with RoHS Directive, and has observed the standard
of lead, cadmium, mercury, Hexavalent chromium, polybrominated biphenyls (PBB), and polybrominated
diphenyl ethers (PBDE). A product whose part number has trailing characters “E1” is RoHS compliant.
 MARKING FORMAT (Lead Free version)
Lead-free version
INDEX
46
CONFIDENTIAL
MB39A302-DS405-00005-1v1-E, January 31, 2014
D a t a S h e e t
 LABELING SAMPLE (Lead free version)
Lead-free mark
JEITA logo
The part number of a lead-free product has the
trailing characters "E1".
January 31, 2014, MB39A302-DS405-00005-1v1-E
CONFIDENTIAL
JEDEC logo
"ASSEMBLED IN CHINA" is printed on
the label of a product assembled in China.
47
D a t a S h e e t
 MB39A302 RECOMMENDED CONDITIONS OF MOISTURE SENSITIVITY
LEVEL
[Spansion Recommended Mounting Conditions]
Item
Condition
Mounting Method
Mounting times
IR (infrared reflow), warm air reflow
2 times
Before opening
Please use it within two years after manufacture.
From opening to the 2nd reflow
Less than 8 days
Storage period
Please process within 8 days after baking
When the storage period after
(125°C ± 3°C, 24hrs + 2H/-0H)
opening was exceeded
Baking can be performed up to two times.*
Storage conditions
5°C to 30°C, 70% RH or less (the lowest possible humidity)
*: When taping is used as the shipping form, baking should be performed individually.
[Parameters for Each Mounting Method]
IR (infrared reflow)
260 °C
255 °C
170 °C
to
190 °C
(b)
RT
(a)
H rank: 260°C Max
(a) Temperature Increase gradient
(b) Preliminary heating
(c) Temperature Increase gradient
(d) Actual heating
(d’)
(e) Cooling
(c)
(d)
(e)
(d')
: Average 1°C/s to 4°C/s
: Temperature 170°C to 190°C, 60s to 180s
: Average 1°C/s to 4°C/s
: Temperature 260°C Max; 255°C or more, 10s or less
: Temperature 230°C or more, 40s or less
or
Temperature 225°C or more, 60s or less
or
Temperature 220°C or more, 80s or less
: Natural cooling or forced cooling
Note : Temperature : the top of the package body
JEDEC standard: Moisture Sensitivity Level 3 (IPC/JEDEC J-STD-020D)
48
CONFIDENTIAL
MB39A302-DS405-00005-1v1-E, January 31, 2014
D a t a S h e e t
Recommended manual soldering (partial heating method)
Item
Condition
Before opening
Storage
period
Storage
conditions
Mounting
conditions
Between opening and mounting
Within two years after manufacture.
Within two years after manufacture.
(No need to control moisture during the storage
period because of the partial heating method.)
5°C to 30°C, 70% RH or less (the lowest possible humidity)
Temperature at the tip of a soldering iron: 400°C max
Time: Five seconds or below per pin*
*: Make sure that the tip of a soldering iron does not come in contact with the package body.
January 31, 2014, MB39A302-DS405-00005-1v1-E
CONFIDENTIAL
49
D a t a S h e e t
 PACKAGE DIMENSIONS
48-pin plastic QFN
Lead pitch
0.50 mm
Package width ×
package length
7.00 mm × 7.00 mm
Sealing method
Plastic mold
Mounting height
0.80 mm MAX
Weight
0.12 g
(LCC-48P-M11)
48-pin plastic QFN
(LCC-48P-M11)
7.00±0.10
(.276±.004)
4.40±0.15
(.173±.006)
7.00±0.10
(.276±.004)
4.40±0.15
(.173±.006)
INDEX AREA
+0.05
0.25 –0.07
(.010 +.002
–.003)
0.50(.020)
0.50±0.05
(.020±.002)
1PIN CORNER
(C0.30(C.012))
(TYP)
0.75±0.05
(.030±.002)
+0.03
0.02 –0.02
+.001
(.001 –.001
)
C
(0.20(.008))
2009-2010 FUJITSU SEMICONDUCTOR LIMITED C48064S-c-1-2
Dimensions in mm (inches).
Note: The values in parentheses are reference values.
Please check the latest package dimension at the following URL.
http://edevice.fujitsu.com/package/en-search/
50
CONFIDENTIAL
MB39A302-DS405-00005-1v1-E, January 31, 2014
D a t a S h e e t
 Major Changes
Page
Revision 1.0
Revision 1.1
-
Section
-
Initial release
-
Company name and layout design change
January 31, 2014, MB39A302-DS405-00005-1v1-E
CONFIDENTIAL
Change Results
51
D a t a S h e e t
52
CONFIDENTIAL
MB39A302-DS405-00005-1v1-E, January 31, 2014
D a t a S h e e t
January 31, 2014, MB39A302-DS405-00005-1v1-E
CONFIDENTIAL
53
D a t a S h e e t
Colophon
The products described in this document are designed, developed and manufactured as contemplated for general use,
including without limitation, ordinary industrial use, general office use, personal use, and household use, but are not
designed, developed and manufactured as contemplated (1) for any use that includes fatal risks or dangers that, unless
extremely high safety is secured, could have a serious effect to the public, and could lead directly to death, personal injury,
severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility, aircraft flight control, air traffic
control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for any use
where chance of failure is intolerable (i.e., submersible repeater and artificial satellite). Please note that Spansion will not
be liable to you and/or any third party for any claims or damages arising in connection with above-mentioned uses of the
products. Any semiconductor devices have an inherent chance of failure. You must protect against injury, damage or loss
from such failures by incorporating safety design measures into your facility and equipment such as redundancy, fire
protection, and prevention of over-current levels and other abnormal operating conditions. If any products described in
this document represent goods or technologies subject to certain restrictions on export under the Foreign Exchange and
Foreign Trade Law of Japan, the US Export Administration Regulations or the applicable laws of any other country, the
prior authorization by the respective government entity will be required for export of those products.
Trademarks and Notice
The contents of this document are subject to change without notice. This document may contain information on a
Spansion product under development by Spansion. Spansion reserves the right to change or discontinue work on any
product without notice. The information in this document is provided as is without warranty or guarantee of any kind as to
its accuracy, completeness, operability, fitness for particular purpose, merchantability, non-infringement of third-party
rights, or any other warranty, express, implied, or statutory. Spansion assumes no liability for any damages of any kind
arising out of the use of the information in this document.
Copyright © 2012-2014 Spansion Inc. All rights reserved. Spansion®, the Spansion logo, MirrorBit®, MirrorBit®
EclipseTM, ORNANDTM and combinations thereof, are trademarks and registered trademarks of Spansion LLC in the
United States and other countries. Other names used are for informational purposes only and may be trademarks of their
respective owners.
54
CONFIDENTIAL
MB39A302-DS405-00005-1v1-E, January 31, 2014