AM4835P Analog Power P-Channel 30-V (D

AM4835P
Analog Power
P-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize
High Cell Density process. Low rDS(on) assures
minimal power loss and conserves energy, making
this device ideal for use in power management
circuitry. Typical applications are PWMDC-DC
converters, power management in portable and
battery-powered products such as computers,
printers, battery charger, telecommunication power
system, and telephones power system.
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PRODUCT SUMMARY
VDS (V)
rDS(on) m(Ω)
19 @ VGS = -10V
-30
30 @ VGS = -4.5V
Low rDS(on) Provides Higher Efficiency and
Extends Battery Life
Miniature SO-8 Surface Mount Package
Saves Board Space
High power and current handling capability
Extended VGS range (±25) for battery pack
applications
ID (A)
-9.5
-7.5
1
8
2
7
3
6
4
5
o
ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol Maximum Units
VDS
-30
Drain-Source Voltage
V
±25
VGS
Gate-Source Voltage
o
TA=25 C
a
Continuous Drain Current
o
TA=70 C
b
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
-9.5
ID
IDM
±50
IS
-2.1
o
TA=25 C
a
Power Dissipation
o
TA=70 C
THERMAL RESISTANCE RATINGS
Parameter
a
Maximum Junction-to-Case
a
Maximum Junction-to-Ambient
t <= 5 sec
t <= 10 sec
RθJC
RθJA
W
2.6
TJ, Tstg
Symbol
A
3.1
PD
Operating Junction and Storage Temperature Range
A
-8.3
o
C
-55 to 150
Maximum
25
50
Units
o
C/W
C/W
o
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
1
September, 2003 - Rev. B
PRELIMINARY
Publication Order Number:
DS-AM4835_E
AM4835P
Analog Power
o
SPECIFICATIONS (TA = 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Conditions
V(BR)DSS
VGS(th)
IGSS
VGS = 0 V, ID = -250 uA
VDS = VGS, ID = -250 uA
Min
Limits
Unit
Typ Max
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
A
IDSS
ID(on)
Drain-Source On-Resistance
A
rDS(on)
-30
-1
A
Diode Forward Voltage
Dynamic
g fs
VSD
V
-3
VDS = 0 V, VGS = ±25 V
±100
nA
VDS = -24 V, VGS = 0 V
-1
-5
uA
VDS = -24 V, VGS = 0 V, T J = 55oC
VDS = -5 V, VGS = -10 V
VGS = -10 V, ID = -9.5 A
VGS = -4.5 V, ID = -7.5 A
-50
A
16
26
19
30
VGS = -10 V, ID = -9.5 A, TJ = 55 C
20
29
VDS = -15 V, ID = -9.5 A
IS = -2.1 A, VGS = 0 V
31
-0.7
-1.2
12.8
20
o
Forward Tranconductance
-1.6
mΩ
S
V
b
Total Gate Charge
Qg
Gate-Source Charge
Gate-Drain Charge
Qgs
Qgd
VDS = -15 V, VGS = -4.5 V,
ID = -9.5 A
nC
4.5
5
Switching
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall-Time
td(on)
tr
td(off)
tf
VDD = -15 V, RL = 15 Ω , ID = -1 A,
VGEN = -10 V, RG = 6Ω
15
12
62
46
26
21
108
71
nS
Notes
a.
Pulse test: PW <= 300us duty cycle <= 2%.
b.
Guaranteed by design, not subject to production testing.
Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or
use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and
actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by
customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL products are not designed,
intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or
sustain life, or for any other application in which the failure of the APL product could create a situation where personal injury or death may occur.
Should Buyer purchase or use APL products for any such unintended or unauthorized application, Buyer shall indemnify and hold APL and its
officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney
fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that APL was negligent regarding the design or manufacture of the part. APL is an Equal Opportunity/Affirmative Action Employer.
2
September, 2003 - Rev. B
PRELIMINARY
Publication Order Number:
DS-AM4835_E
AM4835P
Analog Power
Typical Electrical Characteristics (P-Channel)
50
0 .0 4
RDS(ON) Resistance (Ω)
4 .5 V
IDS Drain Current (A)
40
5 Vthr ough 10 V
4V
30
20
3 .5
10
3
0 .0 3 2
VGS=4.5V
0 .0 2 4
VGS=10V
0 .0 16
0 .0 0 8
0
0
0
0 .5
1
1.5
2
2 .5
3
3 .5
0
4
20
30
40
50
I D Drain Current (A)
VDS (V)
Figure 1. On-Region Characteristics
Figure 2. On-Resistance with Drain Current
0 .0 6
1.6
VGS = 10V
I D = 9.5A
1.4
Resistance ( Ω )
Normalized RDS(on)
10
1.2
1.0
0 .0 5
0 .0 4
0 .0 3
0 .0 2
0.8
R
0 .0 1
0.6
-50
-25
0
25
50
75
100
125
0
150
0
2
4
6
8
10
VGS Gate to Source Voltage (V)
T J Juncation T emperature (ºC)
Figure 3. On-Resistance Variation with Temperature
Figure 4. On-Resistance Variation with
Gate to Source Voltage
60
VD=VG
-55C
25C
40
I Source Current (A)
I D Drain Current (A)
50
100
30
125C
20
10
10
T J = 150 C
T J = 25C
1
0
0
1
2
3
4
5
6
0 .1
VGS Ga te to S o urc e Vo lta ge (V)
0
0 .2
0 .4
0 .6
0 .8
1
1 .2
VS D Source to Drain Voltage (V)
Figure 5. Transfer Characteristics
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature
3
September, 2003 - Rev. B
PRELIMINARY
Publication Order Number:
DS-AM4835_E
AM4835P
Analog Power
Typical Electrical Characteristics (P-Channel)
2000
10
Vgs Gate to Source ( V
VD= 10 V
ID= -9 .5A
Ciss
8
Capacitance (pF)
1500
6
4
2
1000
0
0
5
10
15
20
25
Coss
500
Crss
0
30
0
Qg, T otal Gate Charge (nC)
limited
RDS (ON)
10
15
20
VDS (V)
Figure 7. Gate Charge Characteristics
100
5
Figure 8. Capacitance Characteristics
ID
50
45
10 uS
10
40
POWER (W)
ID Current (A)
35
100 uS
1m S
1
10m S
1 100m S
0 .1
10S
100S
DC
30
25
20
15
10
5
0
0 .0 1
0 .1
1
10
0.001
100
VDS Drain to Source Voltage (V)
Figure 9. Maximum Safe Operating Area
0.1
10
1000
T IME(S)
Figure 10. Single Pulse Maximum Power Dissipation
Normalized Thermal Transient Junction to Ambient
1
0.1
.5
.2
P DM
.1
.05
.02
t1
t2
1. Duty C yc a l D = t1/t2
2. P e r Unit B a s e R θJ A
=70C /W
3. T J M - T A = P DM Z θjc
4. S ure fa c e M o unte d
0.01
Single Pulse
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration (S)
Figure 11. Transient Thermal Response Curve
4
September, 2003 - Rev. B
PRELIMINARY
Publication Order Number:
DS-AM4835_E
AM4835P
Analog Power
Package Information
SO-8: 8LEAD
H x 45°
5
September, 2003 - Rev. B
PRELIMINARY
Publication Order Number:
DS-AM4835_E