TDI-CCD image sensors S10200-02-01 S10201-04-01 S10202-08-01 S10202-16-01 Operating the back-thinned CCD in TDI mode delivers high sensitivity. TDI-CCD image sensers capture clear and bright images even under low-light-level conditions. During TDI (time delay integration) mode, the CCD captures an image of a moving object while transferring integrated signal charges synchronously with the object movement. This operation mode dramatically boosts sensitivity to high levels even when capturing fast moving objects. Our new TDI-CCD uses the back-thinned structure to achieve even higher quantum efficiency over a wide spectral range from UV to near IR region (200 to 1100 nm). Features Applications TDI mode gives high sensitivity Sequential imaging of high-speed moving samples High-speed, continuous image acquisition Inspection tasks on electronic parts production line Back-thinned structure ensures high sensitivity from UV to near IR Semiconductor inspection Multiple ports for high-speed line rate Flow cytometery Low noise TDI mode In FFT-CCD, signal charges in each line are vertically transferred during charge readout. TDI mode synchronizes this vertical transfer timing with the movement of the object, so that signal charges are integrated a number of times equal to the number of vertical stages of the CCD pixels. In the TDI mode, the signal charges must be transferred in the same direction at the same speed as those of the object to be imaged. These speeds are expressed by the following equation: v=f×d f: vertical transfer frequency, Schematic diagram showing integrated exposure by TDI mode Time1 Time2 Time3 First stage · · · · · Last stage M Charge In the right figure, when the first stage charges are transferred to the second stage, an additional charges are produced in the second stage by photoelectric conversion and accumulated. When this operation is continuously repeated until reaching the last stage M (the number of vertical stages), signal charges which are M times greater than the initial charges are accumulated. Since the signal charges on each line are output from the CCD horizontal shift register, a two-dimensional image can be continuously acquired. In this way the TDI mode achieves sensitivity which is M times higher than linear image sensors d: pixel size Charge transfer · Object movement v: object moving speed, charge transfer speed, (S/N is improved M times). The TDI mode also improves sensitivity variations compared to frame mode operation. KMPDC0139EA Selection guide Number of Number of Number of Pixel rate Line rate Vertical Applicable*1 total pixels effective pixels camera ports (MHz/port) (kHz) transfer (H × V) (H × V) 2 3 1040 × 128 1024 × 128 2 S10200-02-01* * 2080 × 128 2048 × 128 4 C10000-801/-A01 S10201-04-01*2*3 50 30 Bi-directional S10202-08-01 4160 × 128 4096 × 128 8 S10202-16-01 4224 × 128 4096 × 128 16 100 *1: The C10000 series cameras are products manufactured by Hamamatsu Photonics, System Division (refer to page 14). *2: Temporary window type (S10200-02N-01, S10201-04N-01) is also available upon request. *3: Light-shield mask type (S10200-02M-01, S10201-04M-01) for horizontal register shielding is also available upon request [see device structure (P.7)]. The light-shield mask’s aperture size in the vertical direction is 96 pixels. The effect of the light-shield mask may vary depending on the wavelength of the light source in use and the incident angle of light. 1 Type no. www.hamamatsu.com TDI-CCD image sensors S10200-02-01, S10201-04-01, S10202-08-01, S10202-16-01 Structure Parameter Specification 12 × 12 μm 128 FW × 100 (min.) 3 phases 2 phases Three-stage MOSFET source follower Ceramic DIP (refer to dimensional outlines) Quartz glass*4 Pixel size (H × V) TDI stage Anti-blooming Vertical clock Horizontal clock Output circuit Package Window *4: Resin sealing Absolute maximum ratings (Ta=25 °C) Parameter Operating temperature*5 *6 *7 Storage temperature*7 Output transistor drain voltage Reset drain voltage Overflow drain voltage Overflow gate voltage Summing gate voltage Output gate voltage Reset gate voltage Transfer gate voltage Vertical clock voltage Horizontal clock voltage Symbol Topr Tstg VOD VRD VOFD VOFG VSG VOG VRG VTG VP1V, VP2V, VP3V VP1H, VP2H Min. -50 -50 -0.5 -0.5 -0.5 -10 -10 -10 -10 -10 -8 -10 Typ. - Max. 60 70 25 18 18 15 15 15 15 15 +8 15 Unit °C °C V V V V V V V V V V *5: Package temperature *6: The chip temperature may increase due to heating in high-speed operation. We recommend taking measures to dissipate heat as needed. *7: No condensation Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. Operating conditions (TDI mode, Ta=25 °C) Parameter Output transistor drain voltage Reset drain voltage Output gate voltage Substrate voltage Overflow drain voltage Overflow gate voltage Vertical shift register clock voltage Horizontal shift register clock voltage Summing gate voltage Reset gate voltage Transfer gate voltage External load resistance High Low High Low High Low High Low High Low Symbol VOD VRD VOG VDGND, VAGND VOFD VOFG VP1VH, VP2VH, VP3VH VP1VL, VP2VL, VP3VL VP1HH, VP2HH VP1HL, VP2HL VSGH VSHL VRGH VRGL VTGH VTGL RL Min. 12 12 4 7 3 4 -6 4 -6 4 -6 7 -6 4 -6 2.0 Typ. 15 14 6 0 9 5 6 -5 6 -5 6 -5 8 0 6 -5 2.2 Max. 18 16 8 11 7 8 -4 8 -4 8 -4 9 8 -4 2.4 Unit V V V V V V V V V V V kΩ 2 TDI-CCD image sensors S10200-02-01, S10201-04-01, S10202-08-01, S10202-16-01 Electrical characteristics [Ta=25 °C, fc=30 MHz, Typ. value in operating conditions table (P.2), unless otherwise noted] Parameter Signal output frequency Vertical shift register capacitance Line rate Horizontal shift register capacitance Transfer gate capacitance Summing gate capacitance Reset gate capacitance Symbol fc S10200-02-01 S10201-04-01 S10202-08-01/-16-01 S10200-02-01 S10201-04-01 S10202-08-01 S10202-16-01 S10200-02-01 S10201-04-01 S10202-08-01/-16-01 S10200-02-01 S10201-04-01 S10202-08-01/-16-01 S10200-02-01 S10201-04-01 S10202-08-01/-16-01 S10200-02-01 S10201-04-01 S10202-08-01/-16-01 Charge transfer efficiency*8 DC output level*9 Output impedance*10 Output MOSFET supply current/node Power consumption*9 *10 CP1V, CP2V, CP3V LR CP1H, CP2H CTG CSG CRG CTE Vout Zo Ido P Min. 0.99995 - Typ. 30 250 400 650 50 50 50 100 50 90 90 40 60 100 20 40 40 20 40 40 0.99999 11 150 8 120 Max. 40 12 - Unit MHz pF kHz pF pF pF pF V Ω mA mW/port *8: Charge transfer efficiency per pixel, measured at half of the full well capacity *9: The values depend on the load resistance. (VOD=15 V, Load resistance=2.2 kΩ) *10: Power consumption of the on-chip amplifier plus load resistance Electrical and optical characteristics [Ta=25 °C, fc=30 MHz, Typ. value in operating conditions table (P.2), unless otherwise noted] Parameter Saturation output voltage Full well capacity*11 CCD node sensitivity Dark current*11 *12 Readout noise Dynamic range Photoresponse nonuniformity*13 Spectral response range Symbol Vsat FW Sv DS Nr DR PRNU λ Min. 80 8.5 1777 - Typ. FW × Sv 100 9.5 30 35 2857 ±3 200 to 1100 Max. 120 10.5 100 45 ±10 - Unit V keμV/ee-/pixel e- rms % nm *11: TDI mode *12: Line rate 50 kHz, accumulated dark signal after 128-stage transfer *13: Measured at half of the full well capacity, using LED light (peak emission wavelength: 660 nm), in TDI mode Photoresponse nonuniformity (PRNU) = Fixed pattern noise (peak to peak) Signal × 100 [%] 3 TDI-CCD image sensors S10200-02-01, S10201-04-01, S10202-08-01, S10202-16-01 Spectral response (without window)*14 (Typ. Ta=25 °C) 7000 Back-thinned CCD S10200-02-01 S10201-04-01 S10202-08-01 S10202-16-01 90 6000 80 Quantum efficiency (%) Photosensitivity (V/µJ · cm2) (Typ. Ta=25 °C) 100 5000 4000 3000 2000 70 60 50 40 30 20 1000 10 0 200 300 400 500 600 700 800 900 1000 1100 0 200 Wavelength (nm) Front-illuminated CCD 300 400 500 600 700 800 900 1000 1100 Wavelength (nm) KMPDB0268EB KMPDB0269EC *14: Spectral response with quartz window is decreased according to the spectral transmittance characteristics of window material. Spectral transmittance characteristics of window material (Typ. Ta=25 °C) 100 Transmittance (%) 80 60 40 20 0 200 300 400 500 600 700 800 900 1000 Wavelength (nm) KMPDB0303EA 4 TDI-CCD image sensors S10200-02-01, S10201-04-01, S10202-08-01, S10202-16-01 Sensor structure S10200-02-01 OFD OFG DGND OSb2 Bidirectional transfer OSa2 OSa1 RG RD OD AGND OG SG P2H P1H 512 pixels TGb P3V P2V P1V TGa 128 pixels OSb1 B port side A port side KAPDC0251EA S10201-04-01 OFD OFG DGND OSb4 OSb3 OSb2 TGb P3V P2V P1V TGa Bidirectional transfer OSa4 OSa3 OSa2 OSa1 RG RD OD AGND OG SG P2H P1H 512 pixels 128 pixels OSb1 B port side A port side KMPDC0260EA 5 TDI-CCD image sensors S10200-02-01, S10201-04-01, S10202-08-01, S10202-16-01 S10202-08-01 OFD OFG DGND OSb8 OSb5 OSb4 OSb3 OSb2 TGb P3V P2V P1V TGa Bidirectional transfer OSa8 OSa5 OSa4 OSa3 OSa2 OSa1 RG RD OD AGND OG SG P2H P1H 512 pixels 128 pixels OSb1 B port side A port side KMPDC0261EA S10202-16-01 OSb16 OSb15 OSb9 OSb8 OSb7 OSb6 OSb5 OSb4 OSb3 OSb2 TGb P3V P2V P1V TGa Bidirectional transfer OSa16 OSa15 OSa9 OSa8 OSa7 OSa6 OSa5 OSa4 OSa3 OSa2 RG RD OD AGND OG SG P2H P1H 256 pixels OSa1 OFD OFG DGND 128 pixels OSb1 B port side A port side KMPDC0262EA 6 TDI-CCD image sensors S10200-02-01, S10201-04-01, S10202-08-01, S10202-16-01 Device structure (typical example: S10202-08-01, conceptual drawing of top view) OSb3 OSb6 OSb7 OSb8 OSa3 OSa6 OSa7 OSa8 OSa1 Thinning 128 TDI stages OSb2 OSa2 OSb1 Thinning 8 blank pixels 512 pixels V=128 H=512 × 8 (number of ports) Note: When viewed from the direction of the incident light, the horizontal shift register is covered with a thick silicon layer (dead layer). However, long-wavelength light passes through the silicon dead layer and may possibly be detected by the horizontal shift register. To prevent this, provide light shield on that area as needed. KMPDC0252EB 7 TDI-CCD image sensors S10200-02-01, S10201-04-01, S10202-08-01, S10202-16-01 Timing chart A port side readout OSb RGb HL P2Hb, SGb HL P1Hb HL Tprv, Tpwv, Tpfv Tovrv TGb HL Tovrv P1V HL Tprh, Tpwh, Tpfh P2V HL P3V HL Tovr Tprs, Tpws, Tpfs TGa HL S10200-02-01, S10201-04-01, S10202-08-01: 518 S10202-16-01: 262 P1Ha HL 519 263 520 264 1 3 3 2 4..517 4..261 P2Ha, SGa HL Tprr, Tpwr, Tpfr RGa HL OSa S510 S254 S511 S255 S512 : S10200-02-01, S10201-04-01, S10202-08-01 S256 : S10202-16-01 D1 D2 D3..D8, S1..S509 D3..D8, S1..S253 KMPDC0254EG B port side readout OSb S510 S254 S511 S255 D1 S512 : S10200-02-01, S10201-04-01, S10202-08-01 S256 : S10202-16-01 D2 D3..D8, S1..S509 D3..D8, S1..S253 Tprr, Tpwr, Tpfr RGb H L Tprs, Tpws, Tpfs P2Hb, SGb H L Tovr S10200-02-01, S10201-04-01, S10202-08-01: S10202-16-01: P1Hb HL 518 262 519 263 520 264 Tprh, Tpwh, Tpfh 1 2 3 3 4 ..517 4 ..261 Tprv, Tpwv, Tpfv TGb H L P1V H L P2V H L P3V H L TGa H L P1Ha H L P2Ha, SGa H L RGa H L Tovrv Tovrv OSa KMPDC0253EH 8 TDI-CCD image sensors S10200-02-01, S10201-04-01, S10202-08-01, S10202-16-01 Parameter Pulse width P1V, 2V, 3V, TG Rise and fall times Overlap time Pulse width*15 Rise and fall times*15 P1H, P2H Duty ratio*15 Pulse width SG Rise and fall times Duty ratio Pulse width RG Rise and fall times TG - P1H Overlap time Symbol Tpwv Tprv, Tpfv Tovrv Tpwh Tprh, Tpfh Tpws Tprs, Tpfs Tpwr Tprr, Tpfr Tovr Min. 120 2 30 12.5 3 12.5 2 5 1 30 Typ. 770 10 300 16.5 6 50 16.5 4 50 6 2 1000 Max. - Unit ns ns ns ns ns % ns ns % ns ns ns *15: Symmetrical clock pulses should be overlapped at 50% of maximum pulse amplitude. Dimensional outlines (unit: mm) 27.94 ± 0.33 3.44 ± 0.35 Photosensitive area 12.288 2.84 ± 0.3 21 1 20 1.48 ± 0.15* 10.16 ± 0.25 3 ± 0.1 Index mark +0.05 C0.5 0.25 -0.03 40 Window glass 23.84 ± 0.1 Window glass 9.66 ± 0.1 Photosensitive area 1.536 30.48 ± 0.35 9.91 ± 0.25 2.5 ± 0.1 S10200-02-01 0.457 ± 0.05 1.27 ± 0.1 * Distance from upper surface of window to photosensitive surface KMPDA0218EC 9 TDI-CCD image sensors S10200-02-01, S10201-04-01, S10202-08-01, S10202-16-01 Photosensitive area 1.536 40.64 ± 0.45 38.1 ± 0.43 Window glass 33 ± 0.1 3.44 ± 0.35 Photosensitive area 24.576 2.84 ± 0.3 21 20 3 ± 0.1 1.48 ± 0.15* +0.05 1 Index mark 0.25 -0.03 C0.5 10.16 ± 0.25 Window glass 9.66 ± 0.1 40 9.91 ± 0.25 2.5 ± 0.1 S10201-04-01 0.457 ± 0.05 1.27 ± 0.1 * Distance from upper surface of window to photosensitive surface KMPDA0219EC 2.4 ± 0.24 0.8 ± 0.05 100 51 C0.5 1 50 2.42 ± 0.2* 3 ± 0.3 Index mark 10.16 ± 0.25 Window glass 55 ± 0.1 Photosensitive area 49.152 +0.05 3.8 ± 0.38 0.25 -0.03 63.5 ± 0.64 Window glass 6.5 ± 0.1 Photosensitive area 1.536 66.04 ± 0.66 9.91 ± 0.25 2.5 ± 0.25 S10202-08-01, S10202-16-01 1.27 ± 0.13 0.42 ± 0.25 * Distance from upper surface of window to photosensitive surface KMPDA0220EC 10 TDI-CCD image sensors S10200-02-01, S10201-04-01, S10202-08-01, S10202-16-01 Pin connections S10200-02-01 Pin no. Symbol Function 1 P2V CCD vertical register clock-2 2 P3V CCD vertical register clock-3 3 P1V CCD vertical register clock-1 4 TGa Transfer gate-a 5 SSD Digital GND 6 NC No connection 7 SSA Analog GND 8 OSa1 Output transistor source-a 1 9 OD1 Output drain-1 10 OSa2 Output transistor source-a 2 11 NC No connection 12 NC No connection 13 OG Output gate 14 RD Reset drain 15 OFD Overflow drain 16 SSD Digital GND 17 RGa Reset gate-a 18 SGa Summing gate-a 19 P1Ha CCD horizontal register-a clock-1 20 P2Ha CCD horizontal register-a clock-2 21 P2Hb CCD horizontal register-b clock-2 22 P1Hb CCD horizontal register-b clock-1 23 SGb Summing gate-b 24 RGb Reset gate-b 25 SSD Digital GND 26 OFG Overflow gate 27 RD Reset drain 28 OG Output gate 29 NC No connection 30 NC No connection 31 OSb2 Output transistor source-b2 32 OD2 Output drain-2 33 OSb1 Output transistor source-b1 34 SSA Analog GND 35 NC No connection 36 SSD Digital GND 37 TGb Transfer gate-b 38 P1V CCD vertical register clock-1 39 P3V CCD vertical register clock-3 40 P2V CCD vertical register clock-2 Remark GND GND RL=2.2 kΩ +15 V RL=2.2 kΩ +6 V +14 V +9 V GND GND +5 V +14 V +6 V RL=2.2 kΩ +15 V RL=2.2 kΩ GND GND S10201-04-01 Pin no. Symbol Function 1 P2V CCD vertical register clock-2 2 P3V CCD vertical register clock-3 3 P1V CCD vertical register clock-1 4 TGa Transfer gate-a 5 SSD Digital GND 6 OSa1 Output transistor source-a1 7 SSA Analog GND 8 OSa2 Output transistor source-a2 9 OD1 Output drain-1 10 OSa3 Output transistor source-a3 11 OD3 Output drain-3 12 OSa4 Output transistor source-a4 13 OG Output gate 14 RD Reset drain 15 OFD Overflow drain 16 SSD Digital GND 17 RGa Reset gate-a 18 SGa Summing gate-a 19 P1Ha CCD horizontal register-a clock-1 20 P2Ha CCD horizontal register-a clock-2 21 P2Hb CCD horizontal register-b clock-2 22 P1Hb CCD horizontal register-b clock-1 23 SGb Summing gate-b 24 RGb Reset gate-b 25 SSD Digital GND 26 OFG Overflow gate 27 RD Reset drain 28 OG Output gate 29 OSb4 Output transistor source-b4 30 OD4 Output drain-4 31 OSb3 Output transistor source-b3 32 OD2 Output drain-2 33 OSb2 Output transistor source-b2 34 SSA Analog GND 35 OSb1 Output transistor source-b1 36 SSD Digital GND 37 TGb Transfer gate-b 38 P1V CCD vertical register clock-1 39 P3V CCD vertical register clock-3 40 P2V CCD vertical register clock-2 Remark GND RL=2.2 GND RL=2.2 +15 V RL=2.2 +15 V RL=2.2 +6 V +14 V +9 V GND GND +5 V +14 V +6 V RL=2.2 +15 V RL=2.2 +15 V RL=2.2 GND RL=2.2 GND kΩ kΩ kΩ kΩ kΩ kΩ kΩ kΩ 11 TDI-CCD image sensors Pin no. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 Symbol P1Ha1 P2Ha1 SGa1 RGa1 SSD SSA OFG OSa1 OFD NC RD OSa2 OG NC OD1 OSa3 NC NC OD3 OSa4 NC NC SSD TGa P2V P3V P1V SSD OSa5 OD5 NC NC OSa6 OD7 NC NC OSa7 OG NC RD OSa8 OFD NC OFG SSA SSD RGa2 SGa2 P2Ha2 P1Ha2 Function CCD horizontal register-a1 clock-1 CCD horizontal register-a1 clock-2 Summing gate-a1 Reset gate-a1 Digital GND Analog GND Overflow gate Output transistor source-a1 Overflow drain No connection Reset drain Output transistor source-a2 Output gate No connection Output drain-1 Output transistor source-a3 No connection No connection Output drain-3 Output transistor source-a4 No connection No connection Digital GND Transfer gate-a CCD vertical register clock-2 CCD vertical register clock-3 CCD vertical register clock-1 Digital GND Output transistor source-a5 Output drain-5 No connection No connection Output transistor source-a6 Output drain-7 No connection No connection Output transistor source-a7 Output gate No connection Reset drain Output transistor source-a8 Overflow drain No connection Overflow gate Analog GND Digital GND Reset gate-a2 Summing gate-a2 CCD horizontal register-a2 clock-2 CCD horizontal register-a2 clock-1 S10200-02-01, S10201-04-01, S10202-08-01, S10202-16-01 S10202-08-01 Remark Pin no. 51 52 53 54 GND 55 GND 56 +6 V 57 58 RL=2.2 kΩ +9 V 59 60 +14 V 61 62 RL=2.2 kΩ +6 V 63 64 +15 V 65 66 RL=2.2 kΩ 67 68 +15 V 69 70 RL=2.2 kΩ 71 72 GND 73 74 75 76 77 GND 78 79 RL=2.2 kΩ +15 V 80 81 82 83 RL=2.2 kΩ +15 V 84 85 86 87 RL=2.2 kΩ +6 V 88 89 +14 V 90 91 RL=2.2 kΩ +9 V 92 93 +5 V 94 GND 95 GND 96 97 98 99 100 Symbol P1Hb2 P2Hb2 SGb2 RGb2 SSD SSA OFG NC OFD OSb8 RD NC OG OSb7 NC NC OD8 OSb6 NC NC OD6 OSb5 SSD P1V P3V P2V TGb SSD NC NC OSb4 OD4 NC NC OSb3 OD2 NC OG OSb2 RD NC OFD OSb1 OFG SSA SSD RGb1 SGb1 P2Hb1 P1Hb1 Function CCD horizontal register-b2 clock-1 CCD horizontal register-b2 clock-2 Summing gate-b2 Reset gate-b2 Digital GND Analog GND Overflow gate No connection Overflow drain Output transistor source-b8 Reset drain No connection Output gate Output transistor source-b7 No connection No connection Output drain-8 Output transistor source-b6 No connection No connection Output drain-6 Output transistor source-b5 Digital GND CCD vertical register clock-1 CCD vertical register clock-3 CCD vertical register clock-2 Transfer gate-b Digital GND No connection No connection Output transistor source-b4 Output drain-4 No connection No connection Output transistor source-b3 Output drain-2 No connection Output gate Output transistor source-b2 Reset drain No connection Overflow drain Output transistor source-b1 Overflow gate Analog GND Digital GND Reset gate-b1 Summing gate-b1 CCD horizontal register-b1 clock-2 CCD horizontal register-b1 clock-1 Remark GND GND +5 V +9 V RL=2.2 kΩ +14 V +6 V RL=2.2 kΩ +15 V RL=2.2 kΩ +15 V RL=2.2 kΩ GND GND RL=2.2 kΩ +15 V RL=2.2 kΩ +15 V +6 V RL=2.2 kΩ +14 V +9 V RL=2.2 kΩ +5 V GND GND 12 TDI-CCD image sensors Pin no. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 Symbol P1Ha1 P2Ha1 SGa1 RGa1 SSD SSA OFG OSa1 OFD OSa2 RD OSa3 OG OSa4 OD1 OSa5 OD2 OSa6 OD5 OSa7 OD6 OSa8 SSD TGa P2V P3V P1V SSD OSa9 OD9 OSa10 OD10 OSa11 OD13 OSa12 OD14 OSa13 OG OSa14 RD OSa15 OFD OSa16 OFG SSA SSD RGa2 SGa2 P2Ha2 P1Ha2 Function CCD horizontal register-a1 clock-1 CCD horizontal register-a1 clock-2 Summing gate-a1 Reset gate-a1 Digital GND Analog GND Overflow gate Output transistor source-a1 Overflow drain Output transistor source-a2 Reset drain Output transistor source-a3 Output gate Output transistor source-a4 Output drain-1 Output transistor source-a5 Output drain-2 Output transistor source-a6 Output drain-5 Output transistor source-a7 Output drain-6 Output transistor source-a8 Digital GND Transfer gate-a CCD vertical register clock-2 CCD vertical register clock-3 CCD vertical register clock-1 Digital GND Output transistor source-a9 Output drain-9 Output transistor source-a10 Output drain-10 Output transistor source-a11 Output drain-13 Output transistor source-a12 Output drain-14 Output transistor source-a13 Output gate Output transistor source-a14 Reset drain Output transistor source-a15 Overflow drain Output transistor source-a16 Overflow gate Analog GND Digital GND Reset gate-a2 Summing gate-a2 CCD horizontal register-a2 clock-2 CCD horizontal register-a2 clock-1 S10200-02-01, S10201-04-01, S10202-08-01, S10202-16-01 S10202-16-01 Remark Pin no. 51 52 53 54 GND 55 GND 56 +5 V 57 58 RL=2.2 kΩ +9 V 59 60 RL=2.2 kΩ +14 V 61 62 RL=2.2 kΩ +6 V 63 64 RL=2.2 kΩ +15 V 65 66 RL=2.2 kΩ +15 V 67 68 RL=2.2 kΩ +15 V 69 70 RL=2.2 kΩ +15 V 71 72 RL=2.2 kΩ GND 73 74 75 76 77 GND 78 79 RL=2.2 kΩ +15 V 80 81 RL=2.2 kΩ +15 V 82 83 RL=2.2 kΩ +15 V 84 85 RL=2.2 kΩ +15 V 86 87 RL=2.2 kΩ +6 V 88 89 RL=2.2 kΩ +14 V 90 91 RL=2.2 kΩ +9 V 92 93 RL=2.2 kΩ +5 V 94 GND 95 GND 96 97 98 99 100 Symbol P1Hb2 P2Hb2 SGb2 RGb2 SSD SSA OFG OSb16 OFD OSb15 RD OSb14 OG OSb13 OD16 OSb12 OD15 OSb11 OD12 OSb10 OD11 OSb9 SSD P1V P3V P2V TGb SSD OSb8 OD8 OSb7 OD7 OSb6 OD4 OSb5 OD3 OSb4 OG OSb3 RD OSb2 OFD OSb1 OFG SSA SSD RGb1 SGb1 P2Hb1 P1Hb1 Function CCD horizontal register-b2 clock-1 CCD horizontal register-b2 clock-2 Summing gate-b2 Reset gate-b2 Digital GND Analog GND Overflow gate Output transistor source-b16 Overflow drain Output transistor source-b15 Reset drain Output transistor source-b14 Output gate Output transistor source-b13 Output drain-16 Output transistor source-b12 Output drain-15 Output transistor source-b11 Output drain-12 Output transistor source-b10 Output drain-11 Output transistor source-b9 Digital GND CCD vertical register clock-1 CCD vertical register clock-3 CCD vertical register clock-2 Transfer gate-b Digital GND Output transistor source-b8 Output drain-8 Output transistor source-b7 Output drain-7 Output transistor source-b6 Output drain-4 Output transistor source-b5 Output drain-3 Output transistor source-b4 Output gate Output transistor source-b3 Reset drain Output transistor source-b2 Overflow drain Output transistor source-b1 Overflow gate Analog GND Digital GND Reset gate-b1 Summing gate-b1 CCD horizontal register-b1 clock-2 CCD horizontal register-b1 clock-1 Remark GND GND +5 V RL=2.2 +9 V RL=2.2 +14 V RL=2.2 +6 V RL=2.2 +15 V RL=2.2 +15 V RL=2.2 +15 V RL=2.2 +15 V RL=2.2 GND GND RL=2.2 +15 V RL=2.2 +15 V RL=2.2 +15 V RL=2.2 +15 V RL=2.2 +6 V RL=2.2 +14 V RL=2.2 +9 V RL=2.2 +5 V GND GND kΩ kΩ kΩ kΩ kΩ kΩ kΩ kΩ kΩ kΩ kΩ kΩ kΩ kΩ kΩ kΩ 13 TDI-CCD image sensors S10200-02-01, S10201-04-01, S10202-08-01, S10202-16-01 Precautions (Electrostatic countermeasures) ∙ Handle these sensors with bare hands or wearing cotton gloves. In addition, wear anti-static clothing or use a wrist band with an earth ring, in order to prevent electrostatic damage due to electrical charges from friction. ∙ Avoid directly placing these sensors on a work-desk, etc. that may carry an electrostatic charge. ∙ Provide ground lines or ground connection with the work-floor, work-desk and work-bench to allow static electricity to discharge. ∙ Ground the tools used to handle these sensors, such as tweezers and soldering irons. It is not always necessary to provide all the electrostatic measures stated above. Implement these measures according to the amount of damage that occurs. Related information www.hamamatsu.com/sp/ssd/doc_en.html Precautions ∙ Disclamer ∙ Image sensors/Precautions TDI camera C10000 series The TDI camera C10000 series is useful in a wide range of imaging applications that require both high speed and high sensitivity, including in-line monitoring and inspection. Product information www.hamamatsu.com/all/en/C10000-801.html C10000-801 (With S10201-04-01) C10000-A01 (With S10201-04-01) Electrical and optical characteristics listed in the datasheet are the values when used under typical operating conditions. We recommend using the product under typical operating conditions. Product characteristics vary with operating conditions. Operating conditions specified in the datasheet show the adjustment range. They must be adjusted within the specified range. Information described in this material is current as of December, 2015. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J. 08807, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741 China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Cat. No. KMPD1098E10 Dec. 2015 DN 14