s10200-02-01 etc kmpd1098e

TDI-CCD image sensors
S10200-02-01
S10201-04-01
S10202-08-01
S10202-16-01
Operating the back-thinned CCD in TDI mode
delivers high sensitivity.
TDI-CCD image sensers capture clear and bright images even under low-light-level conditions. During TDI (time delay integration) mode, the CCD captures an image of a moving object while transferring integrated signal charges synchronously with
the object movement. This operation mode dramatically boosts sensitivity to high levels even when capturing fast moving
objects. Our new TDI-CCD uses the back-thinned structure to achieve even higher quantum efficiency over a wide spectral
range from UV to near IR region (200 to 1100 nm).
Features
Applications
TDI mode gives high sensitivity
Sequential imaging of high-speed moving samples
High-speed, continuous image acquisition
Inspection tasks on electronic parts production line
Back-thinned structure ensures high sensitivity from UV to near IR
Semiconductor inspection
Multiple ports for high-speed line rate
Flow cytometery
Low noise
TDI mode
In FFT-CCD, signal charges in each line are vertically transferred during charge readout. TDI mode synchronizes this vertical
transfer timing with the movement of the object, so that signal charges are integrated a number of times equal to the number
of vertical stages of the CCD pixels. In the TDI mode, the signal charges must be transferred in the same direction at the same
speed as those of the object to be imaged. These speeds are expressed by the following equation:
v=f×d
f: vertical transfer frequency,
Schematic diagram showing integrated
exposure by TDI mode
Time1
Time2
Time3
First stage
·
·
·
·
·
Last stage M
Charge
In the right figure, when the first stage charges are transferred
to the second stage, an additional charges are produced in the
second stage by photoelectric conversion and accumulated.
When this operation is continuously repeated until reaching
the last stage M (the number of vertical stages), signal charges which are M times greater than the initial charges are accumulated. Since the signal charges on each line are output from
the CCD horizontal shift register, a two-dimensional image can
be continuously acquired. In this way the TDI mode achieves
sensitivity which is M times higher than linear image sensors
d: pixel size
Charge transfer
·
Object movement
v: object moving speed, charge transfer speed,
(S/N is improved M times). The TDI mode also improves
sensitivity variations compared to frame mode operation.
KMPDC0139EA
Selection guide
Number of
Number of
Number of
Pixel rate
Line rate
Vertical
Applicable*1
total pixels
effective pixels
camera
ports
(MHz/port)
(kHz)
transfer
(H × V)
(H × V)
2
3
1040 × 128
1024 × 128
2
S10200-02-01* *
2080 × 128
2048 × 128
4
C10000-801/-A01
S10201-04-01*2*3
50
30
Bi-directional
S10202-08-01
4160 × 128
4096 × 128
8
S10202-16-01
4224 × 128
4096 × 128
16
100
*1: The C10000 series cameras are products manufactured by Hamamatsu Photonics, System Division (refer to page 14).
*2: Temporary window type (S10200-02N-01, S10201-04N-01) is also available upon request.
*3: Light-shield mask type (S10200-02M-01, S10201-04M-01) for horizontal register shielding is also available upon request [see device
structure (P.7)]. The light-shield mask’s aperture size in the vertical direction is 96 pixels. The effect of the light-shield mask may
vary depending on the wavelength of the light source in use and the incident angle of light.
1
Type no.
www.hamamatsu.com
TDI-CCD image sensors
S10200-02-01, S10201-04-01, S10202-08-01, S10202-16-01
Structure
Parameter
Specification
12 × 12 μm
128
FW × 100 (min.)
3 phases
2 phases
Three-stage MOSFET source follower
Ceramic DIP (refer to dimensional outlines)
Quartz glass*4
Pixel size (H × V)
TDI stage
Anti-blooming
Vertical clock
Horizontal clock
Output circuit
Package
Window
*4: Resin sealing
Absolute maximum ratings (Ta=25 °C)
Parameter
Operating temperature*5 *6 *7
Storage temperature*7
Output transistor drain voltage
Reset drain voltage
Overflow drain voltage
Overflow gate voltage
Summing gate voltage
Output gate voltage
Reset gate voltage
Transfer gate voltage
Vertical clock voltage
Horizontal clock voltage
Symbol
Topr
Tstg
VOD
VRD
VOFD
VOFG
VSG
VOG
VRG
VTG
VP1V, VP2V, VP3V
VP1H, VP2H
Min.
-50
-50
-0.5
-0.5
-0.5
-10
-10
-10
-10
-10
-8
-10
Typ.
-
Max.
60
70
25
18
18
15
15
15
15
15
+8
15
Unit
°C
°C
V
V
V
V
V
V
V
V
V
V
*5: Package temperature
*6: The chip temperature may increase due to heating in high-speed operation. We recommend taking measures to dissipate heat as needed.
*7: No condensation
Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the
product within the absolute maximum ratings.
Operating conditions (TDI mode, Ta=25 °C)
Parameter
Output transistor drain voltage
Reset drain voltage
Output gate voltage
Substrate voltage
Overflow drain voltage
Overflow gate voltage
Vertical shift register clock voltage
Horizontal shift register clock voltage
Summing gate voltage
Reset gate voltage
Transfer gate voltage
External load resistance
High
Low
High
Low
High
Low
High
Low
High
Low
Symbol
VOD
VRD
VOG
VDGND, VAGND
VOFD
VOFG
VP1VH, VP2VH, VP3VH
VP1VL, VP2VL, VP3VL
VP1HH, VP2HH
VP1HL, VP2HL
VSGH
VSHL
VRGH
VRGL
VTGH
VTGL
RL
Min.
12
12
4
7
3
4
-6
4
-6
4
-6
7
-6
4
-6
2.0
Typ.
15
14
6
0
9
5
6
-5
6
-5
6
-5
8
0
6
-5
2.2
Max.
18
16
8
11
7
8
-4
8
-4
8
-4
9
8
-4
2.4
Unit
V
V
V
V
V
V
V
V
V
V
V
kΩ
2
TDI-CCD image sensors
S10200-02-01, S10201-04-01, S10202-08-01, S10202-16-01
Electrical characteristics [Ta=25 °C, fc=30 MHz, Typ. value in operating conditions table (P.2), unless otherwise noted]
Parameter
Signal output frequency
Vertical shift register
capacitance
Line rate
Horizontal shift register
capacitance
Transfer gate capacitance
Summing gate capacitance
Reset gate capacitance
Symbol
fc
S10200-02-01
S10201-04-01
S10202-08-01/-16-01
S10200-02-01
S10201-04-01
S10202-08-01
S10202-16-01
S10200-02-01
S10201-04-01
S10202-08-01/-16-01
S10200-02-01
S10201-04-01
S10202-08-01/-16-01
S10200-02-01
S10201-04-01
S10202-08-01/-16-01
S10200-02-01
S10201-04-01
S10202-08-01/-16-01
Charge transfer efficiency*8
DC output level*9
Output impedance*10
Output MOSFET supply current/node
Power consumption*9 *10
CP1V, CP2V, CP3V
LR
CP1H, CP2H
CTG
CSG
CRG
CTE
Vout
Zo
Ido
P
Min.
0.99995
-
Typ.
30
250
400
650
50
50
50
100
50
90
90
40
60
100
20
40
40
20
40
40
0.99999
11
150
8
120
Max.
40
12
-
Unit
MHz
pF
kHz
pF
pF
pF
pF
V
Ω
mA
mW/port
*8: Charge transfer efficiency per pixel, measured at half of the full well capacity
*9: The values depend on the load resistance. (VOD=15 V, Load resistance=2.2 kΩ)
*10: Power consumption of the on-chip amplifier plus load resistance
Electrical and optical characteristics [Ta=25 °C, fc=30 MHz, Typ. value in operating conditions table (P.2), unless otherwise noted]
Parameter
Saturation output voltage
Full well capacity*11
CCD node sensitivity
Dark current*11 *12
Readout noise
Dynamic range
Photoresponse nonuniformity*13
Spectral response range
Symbol
Vsat
FW
Sv
DS
Nr
DR
PRNU
λ
Min.
80
8.5
1777
-
Typ.
FW × Sv
100
9.5
30
35
2857
±3
200 to 1100
Max.
120
10.5
100
45
±10
-
Unit
V
keμV/ee-/pixel
e- rms
%
nm
*11: TDI mode
*12: Line rate 50 kHz, accumulated dark signal after 128-stage transfer
*13: Measured at half of the full well capacity, using LED light (peak emission wavelength: 660 nm), in TDI mode
Photoresponse nonuniformity (PRNU) =
Fixed pattern noise (peak to peak)
Signal
× 100 [%]
3
TDI-CCD image sensors
S10200-02-01, S10201-04-01, S10202-08-01, S10202-16-01
Spectral response (without window)*14
(Typ. Ta=25 °C)
7000
Back-thinned CCD
S10200-02-01
S10201-04-01
S10202-08-01
S10202-16-01
90
6000
80
Quantum efficiency (%)
Photosensitivity (V/µJ · cm2)
(Typ. Ta=25 °C)
100
5000
4000
3000
2000
70
60
50
40
30
20
1000
10
0
200
300 400
500 600
700 800 900 1000 1100
0
200
Wavelength (nm)
Front-illuminated CCD
300
400
500
600
700
800
900 1000 1100
Wavelength (nm)
KMPDB0268EB
KMPDB0269EC
*14: Spectral response with quartz window is decreased according to the spectral transmittance characteristics of window material.
Spectral transmittance characteristics of window material
(Typ. Ta=25 °C)
100
Transmittance (%)
80
60
40
20
0
200
300
400
500
600
700
800
900
1000
Wavelength (nm)
KMPDB0303EA
4
TDI-CCD image sensors
S10200-02-01, S10201-04-01, S10202-08-01, S10202-16-01
Sensor structure
S10200-02-01
OFD
OFG
DGND
OSb2
Bidirectional transfer
OSa2
OSa1
RG
RD
OD
AGND
OG
SG
P2H
P1H
512 pixels
TGb
P3V
P2V
P1V
TGa
128 pixels
OSb1
B port side
A port side
KAPDC0251EA
S10201-04-01
OFD
OFG
DGND
OSb4
OSb3
OSb2
TGb
P3V
P2V
P1V
TGa
Bidirectional transfer
OSa4
OSa3
OSa2
OSa1
RG
RD
OD
AGND
OG
SG
P2H
P1H
512 pixels
128 pixels
OSb1
B port side
A port side
KMPDC0260EA
5
TDI-CCD image sensors
S10200-02-01, S10201-04-01, S10202-08-01, S10202-16-01
S10202-08-01
OFD
OFG
DGND
OSb8
OSb5
OSb4
OSb3
OSb2
TGb
P3V
P2V
P1V
TGa
Bidirectional transfer
OSa8
OSa5
OSa4
OSa3
OSa2
OSa1
RG
RD
OD
AGND
OG
SG
P2H
P1H
512 pixels
128 pixels
OSb1
B port side
A port side
KMPDC0261EA
S10202-16-01
OSb16
OSb15
OSb9
OSb8
OSb7
OSb6
OSb5
OSb4
OSb3
OSb2
TGb
P3V
P2V
P1V
TGa
Bidirectional
transfer
OSa16
OSa15
OSa9
OSa8
OSa7
OSa6
OSa5
OSa4
OSa3
OSa2
RG
RD
OD
AGND
OG
SG
P2H
P1H
256 pixels
OSa1
OFD
OFG
DGND
128 pixels
OSb1
B port side
A port side
KMPDC0262EA
6
TDI-CCD image sensors
S10200-02-01, S10201-04-01, S10202-08-01, S10202-16-01
Device structure (typical example: S10202-08-01, conceptual drawing of top view)
OSb3
OSb6
OSb7
OSb8
OSa3
OSa6
OSa7
OSa8
OSa1
Thinning
128 TDI stages
OSb2
OSa2
OSb1
Thinning
8 blank pixels
512 pixels
V=128
H=512 × 8 (number of ports)
Note: When viewed from the direction of the incident light, the horizontal shift register is covered with a thick silicon layer (dead layer). However,
long-wavelength light passes through the silicon dead layer and may possibly be detected by the horizontal shift register. To prevent this,
provide light shield on that area as needed.
KMPDC0252EB
7
TDI-CCD image sensors
S10200-02-01, S10201-04-01, S10202-08-01, S10202-16-01
Timing chart
A port side readout
OSb
RGb HL
P2Hb, SGb HL
P1Hb HL
Tprv, Tpwv, Tpfv
Tovrv
TGb HL
Tovrv
P1V HL
Tprh, Tpwh, Tpfh
P2V HL
P3V HL
Tovr
Tprs, Tpws, Tpfs
TGa HL
S10200-02-01, S10201-04-01, S10202-08-01: 518
S10202-16-01: 262
P1Ha HL
519
263
520
264
1
3
3
2
4..517
4..261
P2Ha, SGa HL
Tprr, Tpwr, Tpfr
RGa HL
OSa
S510
S254
S511
S255
S512 : S10200-02-01, S10201-04-01, S10202-08-01
S256 : S10202-16-01
D1
D2
D3..D8, S1..S509
D3..D8, S1..S253
KMPDC0254EG
B port side readout
OSb
S510
S254
S511
S255
D1
S512 : S10200-02-01, S10201-04-01, S10202-08-01
S256 : S10202-16-01
D2
D3..D8, S1..S509
D3..D8, S1..S253
Tprr, Tpwr, Tpfr
RGb
H
L
Tprs, Tpws, Tpfs
P2Hb, SGb
H
L
Tovr
S10200-02-01, S10201-04-01, S10202-08-01:
S10202-16-01:
P1Hb HL
518
262
519
263
520
264
Tprh, Tpwh, Tpfh
1
2
3
3
4 ..517
4 ..261
Tprv, Tpwv, Tpfv
TGb
H
L
P1V
H
L
P2V
H
L
P3V
H
L
TGa
H
L
P1Ha
H
L
P2Ha, SGa
H
L
RGa
H
L
Tovrv
Tovrv
OSa
KMPDC0253EH
8
TDI-CCD image sensors
S10200-02-01, S10201-04-01, S10202-08-01, S10202-16-01
Parameter
Pulse width
P1V, 2V, 3V, TG
Rise and fall times
Overlap time
Pulse width*15
Rise and fall times*15
P1H, P2H
Duty ratio*15
Pulse width
SG
Rise and fall times
Duty ratio
Pulse width
RG
Rise and fall times
TG - P1H
Overlap time
Symbol
Tpwv
Tprv, Tpfv
Tovrv
Tpwh
Tprh, Tpfh
Tpws
Tprs, Tpfs
Tpwr
Tprr, Tpfr
Tovr
Min.
120
2
30
12.5
3
12.5
2
5
1
30
Typ.
770
10
300
16.5
6
50
16.5
4
50
6
2
1000
Max.
-
Unit
ns
ns
ns
ns
ns
%
ns
ns
%
ns
ns
ns
*15: Symmetrical clock pulses should be overlapped at 50% of maximum pulse amplitude.
Dimensional outlines (unit: mm)
27.94 ± 0.33
3.44 ± 0.35
Photosensitive area 12.288
2.84 ± 0.3
21
1
20
1.48 ± 0.15*
10.16 ± 0.25
3 ± 0.1
Index mark
+0.05
C0.5
0.25 -0.03
40
Window glass 23.84 ± 0.1
Window glass
9.66 ± 0.1
Photosensitive area 1.536
30.48 ± 0.35
9.91 ± 0.25
2.5 ± 0.1
S10200-02-01
0.457 ± 0.05
1.27 ± 0.1
* Distance from upper surface of window to photosensitive surface
KMPDA0218EC
9
TDI-CCD image sensors
S10200-02-01, S10201-04-01, S10202-08-01, S10202-16-01
Photosensitive area 1.536
40.64 ± 0.45
38.1 ± 0.43
Window glass 33 ± 0.1
3.44 ± 0.35
Photosensitive area 24.576
2.84 ± 0.3
21
20
3 ± 0.1
1.48 ± 0.15*
+0.05
1
Index mark
0.25 -0.03
C0.5
10.16 ± 0.25
Window glass
9.66 ± 0.1
40
9.91 ± 0.25
2.5 ± 0.1
S10201-04-01
0.457 ± 0.05
1.27 ± 0.1
* Distance from upper surface of window to photosensitive surface
KMPDA0219EC
2.4 ± 0.24
0.8 ± 0.05
100
51
C0.5
1
50
2.42 ± 0.2*
3 ± 0.3
Index mark
10.16 ± 0.25
Window glass 55 ± 0.1
Photosensitive area 49.152
+0.05
3.8 ± 0.38
0.25 -0.03
63.5 ± 0.64
Window glass
6.5 ± 0.1
Photosensitive area 1.536
66.04 ± 0.66
9.91 ± 0.25
2.5 ± 0.25
S10202-08-01, S10202-16-01
1.27 ± 0.13
0.42 ± 0.25
* Distance from upper surface of window to photosensitive surface
KMPDA0220EC
10
TDI-CCD image sensors
S10200-02-01, S10201-04-01, S10202-08-01, S10202-16-01
Pin connections
S10200-02-01
Pin no. Symbol
Function
1
P2V CCD vertical register clock-2
2
P3V CCD vertical register clock-3
3
P1V CCD vertical register clock-1
4
TGa Transfer gate-a
5
SSD Digital GND
6
NC
No connection
7
SSA Analog GND
8
OSa1 Output transistor source-a 1
9
OD1 Output drain-1
10
OSa2 Output transistor source-a 2
11
NC
No connection
12
NC
No connection
13
OG
Output gate
14
RD
Reset drain
15
OFD Overflow drain
16
SSD Digital GND
17
RGa Reset gate-a
18
SGa Summing gate-a
19
P1Ha CCD horizontal register-a clock-1
20
P2Ha CCD horizontal register-a clock-2
21
P2Hb CCD horizontal register-b clock-2
22
P1Hb CCD horizontal register-b clock-1
23
SGb Summing gate-b
24
RGb Reset gate-b
25
SSD Digital GND
26
OFG Overflow gate
27
RD
Reset drain
28
OG
Output gate
29
NC
No connection
30
NC
No connection
31
OSb2 Output transistor source-b2
32
OD2 Output drain-2
33
OSb1 Output transistor source-b1
34
SSA Analog GND
35
NC
No connection
36
SSD Digital GND
37
TGb Transfer gate-b
38
P1V CCD vertical register clock-1
39
P3V CCD vertical register clock-3
40
P2V CCD vertical register clock-2
Remark
GND
GND
RL=2.2 kΩ
+15 V
RL=2.2 kΩ
+6 V
+14 V
+9 V
GND
GND
+5 V
+14 V
+6 V
RL=2.2 kΩ
+15 V
RL=2.2 kΩ
GND
GND
S10201-04-01
Pin no. Symbol
Function
1
P2V CCD vertical register clock-2
2
P3V CCD vertical register clock-3
3
P1V CCD vertical register clock-1
4
TGa Transfer gate-a
5
SSD Digital GND
6
OSa1 Output transistor source-a1
7
SSA Analog GND
8
OSa2 Output transistor source-a2
9
OD1 Output drain-1
10
OSa3 Output transistor source-a3
11
OD3 Output drain-3
12
OSa4 Output transistor source-a4
13
OG
Output gate
14
RD
Reset drain
15
OFD Overflow drain
16
SSD Digital GND
17
RGa Reset gate-a
18
SGa Summing gate-a
19
P1Ha CCD horizontal register-a clock-1
20
P2Ha CCD horizontal register-a clock-2
21
P2Hb CCD horizontal register-b clock-2
22
P1Hb CCD horizontal register-b clock-1
23
SGb Summing gate-b
24
RGb Reset gate-b
25
SSD Digital GND
26
OFG Overflow gate
27
RD
Reset drain
28
OG
Output gate
29
OSb4 Output transistor source-b4
30
OD4 Output drain-4
31
OSb3 Output transistor source-b3
32
OD2 Output drain-2
33
OSb2 Output transistor source-b2
34
SSA Analog GND
35
OSb1 Output transistor source-b1
36
SSD Digital GND
37
TGb Transfer gate-b
38
P1V CCD vertical register clock-1
39
P3V CCD vertical register clock-3
40
P2V CCD vertical register clock-2
Remark
GND
RL=2.2
GND
RL=2.2
+15 V
RL=2.2
+15 V
RL=2.2
+6 V
+14 V
+9 V
GND
GND
+5 V
+14 V
+6 V
RL=2.2
+15 V
RL=2.2
+15 V
RL=2.2
GND
RL=2.2
GND
kΩ
kΩ
kΩ
kΩ
kΩ
kΩ
kΩ
kΩ
11
TDI-CCD image sensors
Pin no.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
Symbol
P1Ha1
P2Ha1
SGa1
RGa1
SSD
SSA
OFG
OSa1
OFD
NC
RD
OSa2
OG
NC
OD1
OSa3
NC
NC
OD3
OSa4
NC
NC
SSD
TGa
P2V
P3V
P1V
SSD
OSa5
OD5
NC
NC
OSa6
OD7
NC
NC
OSa7
OG
NC
RD
OSa8
OFD
NC
OFG
SSA
SSD
RGa2
SGa2
P2Ha2
P1Ha2
Function
CCD horizontal register-a1 clock-1
CCD horizontal register-a1 clock-2
Summing gate-a1
Reset gate-a1
Digital GND
Analog GND
Overflow gate
Output transistor source-a1
Overflow drain
No connection
Reset drain
Output transistor source-a2
Output gate
No connection
Output drain-1
Output transistor source-a3
No connection
No connection
Output drain-3
Output transistor source-a4
No connection
No connection
Digital GND
Transfer gate-a
CCD vertical register clock-2
CCD vertical register clock-3
CCD vertical register clock-1
Digital GND
Output transistor source-a5
Output drain-5
No connection
No connection
Output transistor source-a6
Output drain-7
No connection
No connection
Output transistor source-a7
Output gate
No connection
Reset drain
Output transistor source-a8
Overflow drain
No connection
Overflow gate
Analog GND
Digital GND
Reset gate-a2
Summing gate-a2
CCD horizontal register-a2 clock-2
CCD horizontal register-a2 clock-1
S10200-02-01, S10201-04-01, S10202-08-01, S10202-16-01
S10202-08-01
Remark Pin no.
51
52
53
54
GND
55
GND
56
+6 V
57
58
RL=2.2 kΩ
+9 V
59
60
+14 V
61
62
RL=2.2 kΩ
+6 V
63
64
+15 V
65
66
RL=2.2 kΩ
67
68
+15 V
69
70
RL=2.2 kΩ
71
72
GND
73
74
75
76
77
GND
78
79
RL=2.2 kΩ
+15 V
80
81
82
83
RL=2.2 kΩ
+15 V
84
85
86
87
RL=2.2 kΩ
+6 V
88
89
+14 V
90
91
RL=2.2 kΩ
+9 V
92
93
+5 V
94
GND
95
GND
96
97
98
99
100
Symbol
P1Hb2
P2Hb2
SGb2
RGb2
SSD
SSA
OFG
NC
OFD
OSb8
RD
NC
OG
OSb7
NC
NC
OD8
OSb6
NC
NC
OD6
OSb5
SSD
P1V
P3V
P2V
TGb
SSD
NC
NC
OSb4
OD4
NC
NC
OSb3
OD2
NC
OG
OSb2
RD
NC
OFD
OSb1
OFG
SSA
SSD
RGb1
SGb1
P2Hb1
P1Hb1
Function
CCD horizontal register-b2 clock-1
CCD horizontal register-b2 clock-2
Summing gate-b2
Reset gate-b2
Digital GND
Analog GND
Overflow gate
No connection
Overflow drain
Output transistor source-b8
Reset drain
No connection
Output gate
Output transistor source-b7
No connection
No connection
Output drain-8
Output transistor source-b6
No connection
No connection
Output drain-6
Output transistor source-b5
Digital GND
CCD vertical register clock-1
CCD vertical register clock-3
CCD vertical register clock-2
Transfer gate-b
Digital GND
No connection
No connection
Output transistor source-b4
Output drain-4
No connection
No connection
Output transistor source-b3
Output drain-2
No connection
Output gate
Output transistor source-b2
Reset drain
No connection
Overflow drain
Output transistor source-b1
Overflow gate
Analog GND
Digital GND
Reset gate-b1
Summing gate-b1
CCD horizontal register-b1 clock-2
CCD horizontal register-b1 clock-1
Remark
GND
GND
+5 V
+9 V
RL=2.2 kΩ
+14 V
+6 V
RL=2.2 kΩ
+15 V
RL=2.2 kΩ
+15 V
RL=2.2 kΩ
GND
GND
RL=2.2 kΩ
+15 V
RL=2.2 kΩ
+15 V
+6 V
RL=2.2 kΩ
+14 V
+9 V
RL=2.2 kΩ
+5 V
GND
GND
12
TDI-CCD image sensors
Pin no.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
Symbol
P1Ha1
P2Ha1
SGa1
RGa1
SSD
SSA
OFG
OSa1
OFD
OSa2
RD
OSa3
OG
OSa4
OD1
OSa5
OD2
OSa6
OD5
OSa7
OD6
OSa8
SSD
TGa
P2V
P3V
P1V
SSD
OSa9
OD9
OSa10
OD10
OSa11
OD13
OSa12
OD14
OSa13
OG
OSa14
RD
OSa15
OFD
OSa16
OFG
SSA
SSD
RGa2
SGa2
P2Ha2
P1Ha2
Function
CCD horizontal register-a1 clock-1
CCD horizontal register-a1 clock-2
Summing gate-a1
Reset gate-a1
Digital GND
Analog GND
Overflow gate
Output transistor source-a1
Overflow drain
Output transistor source-a2
Reset drain
Output transistor source-a3
Output gate
Output transistor source-a4
Output drain-1
Output transistor source-a5
Output drain-2
Output transistor source-a6
Output drain-5
Output transistor source-a7
Output drain-6
Output transistor source-a8
Digital GND
Transfer gate-a
CCD vertical register clock-2
CCD vertical register clock-3
CCD vertical register clock-1
Digital GND
Output transistor source-a9
Output drain-9
Output transistor source-a10
Output drain-10
Output transistor source-a11
Output drain-13
Output transistor source-a12
Output drain-14
Output transistor source-a13
Output gate
Output transistor source-a14
Reset drain
Output transistor source-a15
Overflow drain
Output transistor source-a16
Overflow gate
Analog GND
Digital GND
Reset gate-a2
Summing gate-a2
CCD horizontal register-a2 clock-2
CCD horizontal register-a2 clock-1
S10200-02-01, S10201-04-01, S10202-08-01, S10202-16-01
S10202-16-01
Remark Pin no.
51
52
53
54
GND
55
GND
56
+5 V
57
58
RL=2.2 kΩ
+9 V
59
60
RL=2.2 kΩ
+14 V
61
62
RL=2.2 kΩ
+6 V
63
64
RL=2.2 kΩ
+15 V
65
66
RL=2.2 kΩ
+15 V
67
68
RL=2.2 kΩ
+15 V
69
70
RL=2.2 kΩ
+15 V
71
72
RL=2.2 kΩ
GND
73
74
75
76
77
GND
78
79
RL=2.2 kΩ
+15 V
80
81
RL=2.2 kΩ
+15 V
82
83
RL=2.2 kΩ
+15 V
84
85
RL=2.2 kΩ
+15 V
86
87
RL=2.2 kΩ
+6 V
88
89
RL=2.2 kΩ
+14 V
90
91
RL=2.2 kΩ
+9 V
92
93
RL=2.2 kΩ
+5 V
94
GND
95
GND
96
97
98
99
100
Symbol
P1Hb2
P2Hb2
SGb2
RGb2
SSD
SSA
OFG
OSb16
OFD
OSb15
RD
OSb14
OG
OSb13
OD16
OSb12
OD15
OSb11
OD12
OSb10
OD11
OSb9
SSD
P1V
P3V
P2V
TGb
SSD
OSb8
OD8
OSb7
OD7
OSb6
OD4
OSb5
OD3
OSb4
OG
OSb3
RD
OSb2
OFD
OSb1
OFG
SSA
SSD
RGb1
SGb1
P2Hb1
P1Hb1
Function
CCD horizontal register-b2 clock-1
CCD horizontal register-b2 clock-2
Summing gate-b2
Reset gate-b2
Digital GND
Analog GND
Overflow gate
Output transistor source-b16
Overflow drain
Output transistor source-b15
Reset drain
Output transistor source-b14
Output gate
Output transistor source-b13
Output drain-16
Output transistor source-b12
Output drain-15
Output transistor source-b11
Output drain-12
Output transistor source-b10
Output drain-11
Output transistor source-b9
Digital GND
CCD vertical register clock-1
CCD vertical register clock-3
CCD vertical register clock-2
Transfer gate-b
Digital GND
Output transistor source-b8
Output drain-8
Output transistor source-b7
Output drain-7
Output transistor source-b6
Output drain-4
Output transistor source-b5
Output drain-3
Output transistor source-b4
Output gate
Output transistor source-b3
Reset drain
Output transistor source-b2
Overflow drain
Output transistor source-b1
Overflow gate
Analog GND
Digital GND
Reset gate-b1
Summing gate-b1
CCD horizontal register-b1 clock-2
CCD horizontal register-b1 clock-1
Remark
GND
GND
+5 V
RL=2.2
+9 V
RL=2.2
+14 V
RL=2.2
+6 V
RL=2.2
+15 V
RL=2.2
+15 V
RL=2.2
+15 V
RL=2.2
+15 V
RL=2.2
GND
GND
RL=2.2
+15 V
RL=2.2
+15 V
RL=2.2
+15 V
RL=2.2
+15 V
RL=2.2
+6 V
RL=2.2
+14 V
RL=2.2
+9 V
RL=2.2
+5 V
GND
GND
kΩ
kΩ
kΩ
kΩ
kΩ
kΩ
kΩ
kΩ
kΩ
kΩ
kΩ
kΩ
kΩ
kΩ
kΩ
kΩ
13
TDI-CCD image sensors
S10200-02-01, S10201-04-01, S10202-08-01, S10202-16-01
Precautions (Electrostatic countermeasures)
∙ Handle
these sensors with bare hands or wearing cotton gloves. In addition, wear anti-static clothing or use a wrist band with an earth
ring, in order to prevent electrostatic damage due to electrical charges from friction.
∙ Avoid directly placing these sensors on a work-desk, etc. that may carry an electrostatic charge.
∙ Provide ground lines or ground connection with the work-floor, work-desk and work-bench to allow static electricity to discharge.
∙ Ground the tools used to handle these sensors, such as tweezers and soldering irons.
It is not always necessary to provide all the electrostatic measures stated above. Implement these measures according to the amount of
damage that occurs.
Related information
www.hamamatsu.com/sp/ssd/doc_en.html
Precautions
∙ Disclamer
∙ Image sensors/Precautions
TDI camera C10000 series
The TDI camera C10000 series is useful in a wide range of
imaging applications that require both high speed and high
sensitivity, including in-line monitoring and inspection.
Product information
www.hamamatsu.com/all/en/C10000-801.html
C10000-801 (With S10201-04-01)
C10000-A01 (With S10201-04-01)
Electrical and optical characteristics listed in the datasheet are the values when used under typical operating conditions. We recommend using the
product under typical operating conditions. Product characteristics vary with operating conditions. Operating conditions specified in the datasheet show
the adjustment range. They must be adjusted within the specified range.
Information described in this material is current as of December, 2015.
Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the
information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always
contact us for the delivery specification sheet to check the latest specifications.
The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that
one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use.
Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission.
www.hamamatsu.com
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J. 08807, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741
China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866
Cat. No. KMPD1098E10 Dec. 2015 DN
14