SO T8 9 PBHV8115X 150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor 9 December 2013 Product data sheet 1. General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62) medium power and flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV9115X. 2. Features and benefits • • • • • • High voltage Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC AEC-Q101 qualified Medium power SMD plastic package 3. Applications • • • • • • LED driver for LED chain module LCD backlighting High Intensity Discharge (HID) front lighting Automotive motor management Hook switch for wired telecom Switch Mode Power Supply (SMPS) 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - 150 V IC collector current - - 1 A hFE DC current gain 100 250 - VCE = 10 V; IC = 50 mA; Tamb = 25 °C Scan or click this QR code to view the latest information for this product PBHV8115X NXP Semiconductors 150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 E emitter 2 C collector 3 B base Simplified outline Graphic symbol 2 3 3 2 1 SOT89 1 sym042 6. Ordering information Table 3. Ordering information Type number PBHV8115X Package Name Description Version SOT89 plastic surface-mounted package; die pad for good heat transfer; SOT89 3 leads 7. Marking Table 4. Marking codes Type number Marking code [1] PBHV8115X %4F [1] PBHV8115X Product data sheet % = placeholder for manufacturing site code All information provided in this document is subject to legal disclaimers. 9 December 2013 © NXP N.V. 2013. All rights reserved 2 / 14 PBHV8115X NXP Semiconductors 150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCBO collector-base voltage open emitter - 400 V VCEO collector-emitter voltage open base - 150 V VEBO emitter-base voltage open collector - 6 V IC collector current - 1 A ICM peak collector current - 2 A IBM peak base current - 400 mA Ptot total power dissipation [1] - 0.52 W [2] - 1.5 W single pulse; tp ≤ 1 ms Tamb ≤ 25 °C Tj junction temperature - 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C [1] [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm . 006aab846 2.0 Ptot (W) 1.6 (1) 1.2 0.8 (2) 0.4 0.0 - 75 - 25 25 (1) FR4 PCB, mounting pad for collector 6 cm (2) FR4 PCB, standard footprint Fig. 1. 75 125 175 Tamb (°C) 2 Power derating curves PBHV8115X Product data sheet All information provided in this document is subject to legal disclaimers. 9 December 2013 © NXP N.V. 2013. All rights reserved 3 / 14 PBHV8115X NXP Semiconductors 150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Rth(j-a) thermal resistance from junction to ambient Rth(j-sp) Conditions in free air Min Typ Max Unit [1] - - 240 K/W [2] - - 83 K/W - - 20 K/W thermal resistance from junction to solder point [1] [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 006aab847 103 Zth(j-a) (K/W) 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm . duty cycle = 1 102 0.75 0.33 0.5 0.2 0.1 10 1 0.05 0.02 0.01 0 10- 1 10- 5 10- 4 10- 3 10- 2 10- 1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 006aab848 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.5 0.2 10 0.75 0.33 0.1 0.05 1 0 10- 1 10- 5 0.02 0.01 10- 4 10- 3 10- 2 FR4 PCB, mounting pad for collector 6 cm Fig. 3. 10- 1 1 10 102 tp (s) 103 2 Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBHV8115X Product data sheet All information provided in this document is subject to legal disclaimers. 9 December 2013 © NXP N.V. 2013. All rights reserved 4 / 14 PBHV8115X NXP Semiconductors 150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit ICBO collector-base cut-off current VCB = 120 V; IE = 0 A; Tamb = 25 °C - - 100 nA VCB = 120 V; IE = 0 A; Tj = 150 °C - - 10 µA ICES collector-emitter cut-off VCE = 120 V; VBE = 0 V; Tamb = 25 °C current - - 100 nA IEBO emitter-base cut-off current VEB = 4 V; IC = 0 A; Tamb = 25 °C - - 100 nA hFE DC current gain VCE = 10 V; IC = 50 mA; Tamb = 25 °C 100 250 - VCE = 10 V; IC = 100 mA; pulsed; 100 250 - 50 160 - 10 30 - IC = 100 mA; IB = 20 mA; Tamb = 25 °C - 33 50 mV IC = 100 mA; IB = 10 mA; Tamb = 25 °C - 40 60 mV IC = 1 A; IB = 0.2 A; pulsed; tp ≤ 300 µs; - 225 350 mV tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C VCE = 10 V; IC = 0.5 A; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C VCE = 10 V; IC = 1 A; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C VCEsat collector-emitter saturation voltage δ ≤ 0.02 ; Tamb = 25 °C VBEsat base-emitter saturation IC = 1 A; IB = 200 mA; pulsed; voltage tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C - 1.1 1.2 V td delay time VCC = 6 V; IC = 0.5 A; IBon = 0.1 A; - 7 - ns tr rise time IBoff = -0.1 A; Tamb = 25 °C - 565 - ns ton turn-on time - 572 - ns ts storage time - 1530 - ns tf fall time - 700 - ns toff turn-off time - 2230 - ns fT transition frequency - 30 - MHz - 5.7 - pF - 150 - pF VCE = 10 V; IC = 10 mA; f = 100 MHz; Tamb = 25 °C Cc collector capacitance VCB = 20 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 °C Ce emitter capacitance VEB = 0.5 V; IC = 0 A; ic = 0 A; f = 1 MHz; Tamb = 25 °C PBHV8115X Product data sheet All information provided in this document is subject to legal disclaimers. 9 December 2013 © NXP N.V. 2013. All rights reserved 5 / 14 PBHV8115X NXP Semiconductors 150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor 006aab158 500 2.0 IC (A) hFE 400 1.6 270 240 210 180 150 120 1.2 90 (1) 300 (2) 006aab159 IB (mA) = 300 60 200 0.8 30 (3) 100 0 10- 1 0.4 1 10 102 0 103 104 IC (mA) VCE = 10 V Fig. 5. (2) Tamb = 25 °C 2 3 4 VCE (V) 5 Collector current as a function of collectoremitter voltage; typical values (3) Tamb = -55 °C DC current gain as a function of collector current; typical values 006aab160 1.2 006aab161 1.3 VBE (V) VBEsat (V) (1) 0.8 0.9 0 10- 1 (1) (2) (2) (3) (3) 0.4 Fig. 6. 1 Tamb = 25 °C (1) Tamb = 100 °C Fig. 4. 0 0.5 1 10 102 0.1 10- 1 103 104 IC (mA) 1 10 VCE = 10 V IC/IB = 5 (1) Tamb = -55 °C (1) Tamb = -55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = 100 °C (3) Tamb = 100 °C Base-emitter voltage as a function of collector current; typical values PBHV8115X Product data sheet Fig. 7. 103 104 IC (mA) Base-emitter saturation voltage as a function of collector current; typical values All information provided in this document is subject to legal disclaimers. 9 December 2013 102 © NXP N.V. 2013. All rights reserved 6 / 14 PBHV8115X NXP Semiconductors 150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor 006aab162 1 006aab163 10 VCEsat (V) VCEsat (V) 1 10- 1 (1) (2) 10- 1 (1) (2) 10- 2 (3) 10- 2 10- 3 10- 1 Fig. 8. 1 10 102 10- 3 10- 1 103 104 IC (mA) (3) 1 IC/IB = 5 Tamb = 25 °C (1) Tamb = 100 °C (1) IC/IB = 20 (2) Tamb = 25 °C (2) IC/IB = 10 (3) Tamb = -55 °C (3) IC/IB = 5 Collector-emitter saturation voltage as a function of collector current; typical values 006aab164 103 Fig. 9. 102 102 10 10 (3) (3) 10 102 (1) (2) 1 (1) (2) 1 10- 1 10- 1 103 104 IC (mA) 1 IC/IB = 5 Tamb = 25 °C (1) Tamb = 100 °C (1) IC/IB = 20 (2) Tamb = 25 °C (2) IC/IB = 10 (3) Tamb = -55 °C (3) IC/IB = 5 Fig. 10. Collector-emitter saturation resistance as a function of collector current; typical values PBHV8115X Product data sheet 103 104 IC (mA) 006aab165 103 RCEsat (Ω) 10- 1 10- 1 102 Collector-emitter saturation voltage as a function of collector current; typical values RCEsat (Ω) 1 10 10 102 103 104 IC (mA) Fig. 11. Collector-emitter saturation resistance as a function of collector current; typical values All information provided in this document is subject to legal disclaimers. 9 December 2013 © NXP N.V. 2013. All rights reserved 7 / 14 PBHV8115X NXP Semiconductors 150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor 11. Test information IB input pulse (idealized waveform) 90 % IBon (100 %) 10 % IBoff output pulse (idealized waveform) IC 90 % IC (100 %) 10 % t td ts tr ton tf toff 006aaa003 Fig. 12. BISS transistor switching time definition VBB RB VCC RC Vo (probe) oscilloscope 450 Ω (probe) 450 Ω R2 VI oscilloscope DUT R1 mlb826 Fig. 13. Test circuit for switching times 11.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. PBHV8115X Product data sheet All information provided in this document is subject to legal disclaimers. 9 December 2013 © NXP N.V. 2013. All rights reserved 8 / 14 PBHV8115X NXP Semiconductors 150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor 12. Package outline Plastic surface-mounted package; exposed die pad for good heat transfer; 3 leads SOT89 B D A bp3 E 1 2 HE Lp 3 c bp2 w M B bp1 e1 e 0 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A bp1 bp2 bp3 c D E e e1 HE Lp w mm 1.6 1.4 0.48 0.35 0.53 0.40 1.8 1.4 0.44 0.23 4.6 4.4 2.6 2.4 3.0 1.5 4.25 3.75 1.2 0.8 0.13 OUTLINE VERSION REFERENCES IEC SOT89 JEDEC JEITA TO-243 SC-62 EUROPEAN PROJECTION ISSUE DATE 06-03-16 06-08-29 Fig. 14. Package outline SOT89 PBHV8115X Product data sheet All information provided in this document is subject to legal disclaimers. 9 December 2013 © NXP N.V. 2013. All rights reserved 9 / 14 PBHV8115X NXP Semiconductors 150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor 13. Soldering 4.75 2.25 2 1.9 1.2 0.2 0.85 solder lands 1.7 1.2 4.6 solder resist 0.5 1 (3×) 4.85 occupied area 1.1 (2×) 1.5 solder paste Dimensions in mm 1.5 0.6 (3×) 0.7 (3×) 3.95 sot089_fr Fig. 15. Reflow soldering footprint for SOT89 6.6 2.4 3.5 solder lands 7.6 0.5 solder resist occupied area 1.8 (2×) Dimensions in mm preferred transport direction during soldering 1.9 1.5 (2×) 1.9 0.7 5.3 sot089_fw Fig. 16. Wave soldering footprint for SOT89 PBHV8115X Product data sheet All information provided in this document is subject to legal disclaimers. 9 December 2013 © NXP N.V. 2013. All rights reserved 10 / 14 PBHV8115X NXP Semiconductors 150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PBHV8115X v.1 20131209 Product data sheet - - PBHV8115X Product data sheet All information provided in this document is subject to legal disclaimers. 9 December 2013 © NXP N.V. 2013. All rights reserved 11 / 14 PBHV8115X NXP Semiconductors 150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 15. Legal information 15.1 Data sheet status Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Document status [1][2] Product status [3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] [2] [3] Definition Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 15.2 Definitions Preview — The document is a preview version only. The document is still subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. 15.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. NXP Semiconductors takes no responsibility for the content in this document if provided by an information source outside of NXP Semiconductors. PBHV8115X Product data sheet Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use in automotive applications — This NXP Semiconductors product has been qualified for use in automotive applications. Unless otherwise agreed in writing, the product is not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. All information provided in this document is subject to legal disclaimers. 9 December 2013 © NXP N.V. 2013. All rights reserved 12 / 14 PBHV8115X NXP Semiconductors 150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 15.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV, FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse, QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. PBHV8115X Product data sheet All information provided in this document is subject to legal disclaimers. 9 December 2013 © NXP N.V. 2013. All rights reserved 13 / 14 PBHV8115X NXP Semiconductors 150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor 16. Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Marking ................................................................... 2 8 Limiting values .......................................................3 9 Thermal characteristics .........................................4 10 Characteristics ....................................................... 5 11 11.1 Test information ..................................................... 8 Quality information ............................................... 8 12 Package outline ..................................................... 9 13 Soldering .............................................................. 10 14 Revision history ................................................... 11 15 15.1 15.2 15.3 15.4 Legal information .................................................12 Data sheet status ............................................... 12 Definitions ...........................................................12 Disclaimers .........................................................12 Trademarks ........................................................ 13 © NXP N.V. 2013. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 9 December 2013 PBHV8115X Product data sheet All information provided in this document is subject to legal disclaimers. 9 December 2013 © NXP N.V. 2013. All rights reserved 14 / 14