PBHV9115X 150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor Rev. 01 — 10 March 2010 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat Surface-Mounted Device (SMD) plastic package. 1.2 Features and benefits High voltage Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC 1.3 Applications LED driver for LED chain module LCD backlighting Automotive motor management Hook switch for wired telecom Switch Mode Power Supply (SMPS) 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit open base - - −150 V - - −1 A 100 220 - VCEO collector-emitter voltage IC collector current hFE DC current gain VCE = −10 V; IC = −50 mA 2. Pinning information Table 2. Pinning Pin Description 1 emitter 2 collector 3 base Simplified outline Graphic symbol 2 3 3 2 1 1 sym079 PBHV9115X NXP Semiconductors 150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor 3. Ordering information Table 3. Ordering information Type number PBHV9115X Package Name Description Version SC-62 plastic surface-mounted package; collector pad for good heat transfer; 3 leads SOT89 4. Marking Table 4. Marking codes Type number Marking code[1] PBHV9115X *4G [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). PBHV9115X_1 Product data sheet Symbol Parameter Conditions Min Max Unit VCBO collector-base voltage open emitter - −200 V VCEO collector-emitter voltage open base - −150 V VCESM collector-emitter peak voltage VBE = 0 V - −200 V VEBO emitter-base voltage open collector - −6 V IC collector current - −1 A ICM peak collector current single pulse; tp ≤ 1 ms - −2 A IBM peak base current single pulse; tp ≤ 1 ms - −400 mA Ptot total power dissipation Tamb ≤ 25 °C [1] 520 mW [2] 1.5 W Tj junction temperature - 150 °C Tamb ambient temperature −55 +150 °C Tstg storage temperature −65 +150 °C [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for collector 6 cm2. All information provided in this document is subject to legal disclaimers. Rev. 01 — 10 March 2010 © NXP B.V. 2010. All rights reserved. 2 of 13 PBHV9115X NXP Semiconductors 150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor 006aab846 2.0 Ptot (W) 1.6 (1) 1.2 0.8 (2) 0.4 0.0 −75 −25 25 75 125 175 Tamb (°C) (1) FR4 PCB, mounting pad for collector 6 cm2 (2) FR4 PCB, standard footprint Fig 1. Power derating curves 6. Thermal characteristics Table 6. Symbol Rth(j-a) Rth(j-sp) PBHV9115X_1 Product data sheet Thermal characteristics Parameter thermal resistance from junction to ambient Conditions in free air thermal resistance from junction to solder point Min Typ Max [1] Unit - - 240 K/W [2] - - 80 K/W - - 20 K/W [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for collector 6 cm2. All information provided in this document is subject to legal disclaimers. Rev. 01 — 10 March 2010 © NXP B.V. 2010. All rights reserved. 3 of 13 PBHV9115X NXP Semiconductors 150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor 006aab847 103 Zth(j-a) (K/W) duty cycle = 1 0.75 102 0.5 0.33 0.2 0.1 0.05 10 0.02 0.01 0 1 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 006aab848 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.5 0.33 0.2 10 0.1 0.05 1 0 10−1 10−5 0.02 0.01 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, mounting pad for collector 6 cm2 Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBHV9115X_1 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 — 10 March 2010 © NXP B.V. 2010. All rights reserved. 4 of 13 PBHV9115X NXP Semiconductors 150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor 7. Characteristics Table 7. Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit ICBO collector-base cut-off current VCB = −120 V; IE = 0 A - - −100 nA VCB = −120 V; IE = 0 A; Tj = 150 °C - - −10 μA ICES collector-emitter cut-off current VCE = −120 V; VBE = 0 V - - −100 nA IEBO emitter-base cut-off current VEB = −4 V; IC = 0 A - - −100 nA hFE DC current gain VCE = −10 V IC = −50 mA VCEsat Product data sheet 220 - [1] 100 220 - IC = −1 A [1] 10 30 - IC = −100 mA; IB = −10 mA [1] - −60 −120 mV IC = −100 mA; IB = −20 mA [1] - −50 −100 mV IC = −500 mA; IB = −50 mA [1] - −200 −300 mV [1] - −1 −1.2 V - 8 - ns - 282 - ns - 290 - ns VBEsat base-emitter saturation voltage IC = −1 A; IB = −100 mA td delay time VCC = −6 V; IC = −0.5 A; IBon = −0.1 A; IBoff = 0.1 A tr rise time ton turn-on time ts storage time - 430 - ns tf fall time - 300 - ns toff turn-off time - 730 - ns fT transition frequency VCE = −10 V; IC = −10 mA; f = 100 MHz - 115 - MHz Cc collector capacitance VCB = −20 V; IE = ie = 0 A; f = 1 MHz - 10 - pF Ce emitter capacitance VEB = −0.5 V; IC = ic = 0 A; f = 1 MHz - 150 - pF [1] PBHV9115X_1 collector-emitter saturation voltage 100 IC = −100 mA Pulse test: tp ≤ 300 μs; δ ≤ 0.02. All information provided in this document is subject to legal disclaimers. Rev. 01 — 10 March 2010 © NXP B.V. 2010. All rights reserved. 5 of 13 PBHV9115X NXP Semiconductors 150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor 006aab166 400 hFE 006aab849 −2.0 IB (mA) = −300 IC (A) (1) −1.5 300 −200 −150 (2) −100 −1.0 200 −50 (3) −20 −0.5 100 −10 −2 0 −10−1 −1 −10 −102 0.0 −103 −104 IC (mA) 0 VCE = −10 V −1 −2 −3 −5 −1 −4 −5 VCE (V) Tamb = 25 °C (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 4. DC current gain as a function of collector current; typical values 006aab168 −1.2 VBE (V) Fig 5. Collector current as a function of collector-emitter voltage; typical values 006aab850 −1.3 VBEsat (V) (1) −0.8 −0.9 (2) (1) (3) (2) −0.4 −0.5 0 −10−1 −1 −10 −102 −103 −104 IC (mA) (3) −0.1 −10−1 VCE = −10 V −1 (1) Tamb = −55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = 100 °C (3) Tamb = 100 °C Base-emitter voltage as a function of collector current; typical values PBHV9115X_1 Product data sheet −102 −103 IC (mA) IC/IB = 10 (1) Tamb = −55 °C Fig 6. −10 Fig 7. Base-emitter saturation voltage as a function of collector current; typical values All information provided in this document is subject to legal disclaimers. Rev. 01 — 10 March 2010 © NXP B.V. 2010. All rights reserved. 6 of 13 PBHV9115X NXP Semiconductors 150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor 006aab851 −1 006aab852 −1 VCEsat (V) VCEsat (V) −10−1 −10−1 (1) (2) (1) (2) (3) (3) −10−2 −10−1 −1 −10 −102 −103 IC (mA) −10−2 −10−1 −1 −102 −103 IC (mA) Tamb = 25 °C IC/IB = 10 (1) Tamb = 100 °C (1) IC/IB = 50 (2) Tamb = 25 °C (2) IC/IB = 20 (3) Tamb = −55 °C (3) IC/IB = 10 Fig 8. −10 Collector-emitter saturation voltage as a function of collector current; typical values 006aab853 103 Fig 9. Collector-emitter saturation voltage as a function of collector current; typical values 006aab854 103 RCEsat (Ω) RCEsat (Ω) 102 102 10 10 (1) (2) (1) (2) 1 1 (3) (3) 10−1 −10−1 −1 −10 −102 −103 −104 IC (mA) 10−1 −10−1 −1 (1) IC/IB = 50 (2) Tamb = 25 °C (2) IC/IB = 20 (3) Tamb = −55 °C (3) IC/IB = 10 Fig 10. Collector-emitter saturation resistance as a function of collector current; typical values Product data sheet −102 −103 −104 IC (mA) Tamb = 25 °C IC/IB = 10 (1) Tamb = 100 °C PBHV9115X_1 −10 Fig 11. Collector-emitter saturation resistance as a function of collector current; typical values All information provided in this document is subject to legal disclaimers. Rev. 01 — 10 March 2010 © NXP B.V. 2010. All rights reserved. 7 of 13 PBHV9115X NXP Semiconductors 150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor 8. Test information VBB VCC RB oscilloscope RC Vo (probe) 450 Ω (probe) 450 Ω oscilloscope R2 VI DUT R1 mgd624 Fig 12. Test circuit for switching times 9. Package outline 4.6 4.4 1.8 1.4 1.6 1.4 2.6 2.4 4.25 3.75 1 2 1.2 0.8 3 0.53 0.40 1.5 0.48 0.35 0.44 0.23 3 Dimensions in mm 06-08-29 Fig 13. Package outline SOT89 (SC-62/TO-243) 10. Packing information Table 8. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number PBHV9115X [1] PBHV9115X_1 Product data sheet Package Description SOT89 Packing quantity 1000 4000 8 mm pitch, 12 mm tape and reel; T1 [2] -115 -135 8 mm pitch, 12 mm tape and reel; T3 [3] -120 - For further information and the availability of packing methods, see Section 14. [2] T1: normal taping [3] T3: 90° taping All information provided in this document is subject to legal disclaimers. Rev. 01 — 10 March 2010 © NXP B.V. 2010. All rights reserved. 8 of 13 PBHV9115X NXP Semiconductors 150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor 11. Soldering 4.75 2.25 2 1.9 1.2 0.2 0.85 solder lands 1.7 1.2 4.6 solder resist 0.5 4.85 solder paste occupied area 1 (3×) 1.1 (2×) 1.5 Dimensions in mm 1.5 0.6 (3×) 0.7 (3×) 3.95 sot089_fr Fig 14. Reflow soldering footprint SOT89 (SC-62/TO-243) 6.6 2.4 3.5 solder lands 7.6 0.5 solder resist occupied area 1.8 (2×) Dimensions in mm preferred transport direction during soldering 1.9 1.5 (2×) 1.9 0.7 5.3 sot089_fw Fig 15. Wave soldering footprint SOT89 (SC-62/TO-243) PBHV9115X_1 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 — 10 March 2010 © NXP B.V. 2010. All rights reserved. 9 of 13 PBHV9115X NXP Semiconductors 150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor 12. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes PBHV9115X_1 20100310 Product data sheet - - PBHV9115X_1 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 — 10 March 2010 © NXP B.V. 2010. All rights reserved. 10 of 13 PBHV9115X NXP Semiconductors 150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 13.2 Definitions Draft — The document is a draft version only. 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This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or PBHV9115X_1 Product data sheet malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on a weakness or default in the customer application/use or the application/use of customer’s third party customer(s) (hereinafter both referred to as “Application”). It is customer’s sole responsibility to check whether the NXP Semiconductors product is suitable and fit for the Application planned. Customer has to do all necessary testing for the Application in order to avoid a default of the Application and the product. NXP Semiconductors does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. 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NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. All information provided in this document is subject to legal disclaimers. Rev. 01 — 10 March 2010 © NXP B.V. 2010. All rights reserved. 11 of 13 PBHV9115X NXP Semiconductors 150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. 13.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 14. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] PBHV9115X_1 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 — 10 March 2010 © NXP B.V. 2010. All rights reserved. 12 of 13 PBHV9115X NXP Semiconductors 150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Packing information . . . . . . . . . . . . . . . . . . . . . 8 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Contact information. . . . . . . . . . . . . . . . . . . . . 12 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 10 March 2010 Document identifier: PBHV9115X_1