PHOTODIODE Si PIN photodiode S6036 series f7 mm lens plastic package S6036 series is Si PIN photodiode molded into a plastic package with a f7 mm lens. Two types are available: S6036 of clear plastic package and S6036-01 of visible-cut package. Features Applications l Plastic package with f7 mm lens l High-speed response: 25 MHz Typ. (VR=12 V, λ=850 nm) l High sensitivity: 0.56 A/W (λ=λp) l Directivity: ±25˚ (half angle) l S6036-01: visible-cut type l Spatial light transmission l Optical communications l Optical data link l High-speed optical measurement l Optical switches l Laser radars ■ Absolute maximum ratings Parameter Reverse voltage Operating temperature Storage temperature Symbol VR Max. Topr Tstg Value 35 -25 to +85 -40 to +100 Unit V °C °C ■ Electrical and optical characteristics (Ta=25 °C) Parameter Spectral response range Peak sensitivity wavelength Photo sensitivity Short circuit current Dark current Temperature coefficient of dark current λ - λp S Isc ID 0.51 24 - S6036 Typ. 320 to 1100 960 0.56 30 0.1 - 1.15 - - 10 25 - - 15 ±25 30 - Symbol Condition λ=λp 100 lx, 2856 K VR=12 V TCID Cut-off frequency fc Terminal capacitance Half angle Ct - VR=12 V, RL=50 Ω λ=850 nm, -3 dB VR=12 V, f=1 MHz Min. Max. Min. - - 10 0.51 13 - S6036-01 Typ. 760 to 1100 960 0.56 17 0.1 Max. Unit - nm 10 nm A/W µA nA 1.15 - times/°C 10 25 - MHz - 15 ±25 30 - pF degree Si PIN photodiode ■ Spectral response ■ Dark current vs. reverse voltage (Typ. Ta=25 ˚C) 1 nA 0.5 DARK CURRENT PHOTO SENSITIVITY (A/W) QE=100 % S6036 0.4 0.3 0.2 100 pA 10 pA S6036-01 0.1 0 200 400 600 800 1 pA 0.01 1000 WAVELENGTH (nm) 1 10 REVERSE VOLTAGE (V) ■ Directivity (Typ. Ta=25 ˚C, f=1 MHz) 1 nF 0.1 KPINB0350EA ■ Terminal capacitance vs. reverse voltage 20˚ 30˚ TERMINAL CAPACITANCE (Typ. Ta=25 ˚C) 10 nA 0.7 0.6 S6036 series 10˚ 0˚ 10˚ 100 KPINB0351EA (Typ. Ta=25 ˚C) 20˚ 100 % 30˚ 80 % 100 pF 40˚ 40˚ 60 % 50˚ 50˚ 40 % 10 pF 60˚ 60˚ 70˚ 1 pF 0.1 1 10 20 % 70˚ 80˚ 80˚ 90˚ 90˚ 100 REVERSE VOLTAGE (V) RELATIVE SENSITIVITY KPINB0352EA KPINB0353EA ■ Dimensional outline (unit: mm, tolerance unless otherwise noted: ±0.1) 1.95 0.8 (0.95) 3.25 0.2 MAX. 5.0 (5.0) 0.5 2.3 ± 0.3 14.3 ± 1.0 5.0 7.0 (3.75) 7.9 ± 0.2 8.75 ± 0.5 CENTER OF LENS 5.08 0.5 KPINA0047EA Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2007 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Cat. No. KSPD1078E01 Sept. 2007 DN