Si photodiodes with preamp S8745-01 S8746-01 Photodiode and preamp integrated with feedback resistance and capacitance The S8745-01 and S8746-01 are low-noise sensors consisting of Si photodiode, op amp, and feedback resistance and capacitance, all integrated into a small package. By simply connecting to a power supply, the S8745-01 and S8746-01 can be used in low-light-level measurement such as analytical equipment and measurement equipment. The photosensitive area of the photodiode is internally connected to the GND terminal making it highly resistant to EMC noise. Features Applications Si photodiode for UV to near IR precision photometry Spectrophotometry Small metal package with quartz window S8745-01: TO-5 S8746-01: TO-8 General-purpose optical measurement Photosensitive area S8745-01: 2.4 × 2.4 mm S8746-01: 5.8 × 5.8 mm FET input operational amplifier with low power dissipation Built-in Rf=1 GΩ and Cf=5 pF Variable gain with an externally connected resistor Low noise and NEP Package with shielding effect Resistant to EMC noise The S8745-01 and S8746-01 may be damaged by electro static discharge, etc. Please see precautions in the last page. Absolute maximum ratings (Ta=25 °C) Parameter Supply voltage (op amp) Power dissipation Operating temperature Storage temperature Symbol Vcc P Topr Tstg Value ±20 500 -20 to +60 -30 to +80 Unit V mW °C °C Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. www.hamamatsu.com 1 Si photodiodes with preamp S8745-01, S8746-01 Electrical and optical characteristics (Typ. Ta=25 °C, Vcc=±15 V, RL=1 MΩ, unless otherwise noted) Parameter Spectral response range Peak sensitivity wavelength Feedback resistance (built-in) Feedback capacitance (built-in) Symbol λ λp Rf Cf Photosensitivity S Output noise voltage Vn Noise equivalent power NEP Output offset voltage Cutoff frequency Output voltage swing Supply current Vos fc Vo Icc Condition λ=200 nm λ=λp Dark state, f=10 Hz Dark state, f=20 Hz λ=λp, f=10 Hz λ=λp, f=20 Hz Dark state -3 dB Dark state S8745-01 S8746-01 190 to 1100 960 1 5 0.12 0.52 6 5 11 11 V/nW 7 6 15 15 ±4 32 13 0.3 Unit nm nm GΩ pF μV rms/Hz1/2 fW/Hz1/2 mV Hz V mA [Figure 1] Spectral response 0.6 [Typ.Ta=25 °C, Rf=1 GΩ (built-in), Cf=5 pF (built-in)] Photosensitivity (V/nW) 0.5 0.4 0.3 0.2 0.1 0 190 400 600 800 1000 1200 Wavelength (nm) KSPDB0232EA The built-in feedback resistance and capacitance of the S8745-01 and S8746-01 are 1 GΩ and 5 pF, respectively. This combination provides a sensitivity of about 0.1 to 0.5 V/nW in the wavelength range of 190 to 1100 nm. 2 S8745-01, S8746-01 Si photodiodes with preamp [Figure 2] Gain-frequency characteristics S8745-01 104 S8746-01 [Typ. Ta=25 °C, Vcc=±15 V, Cf=5 pF (built-in), RL=1 MΩ] 104 [Typ. Ta=25 °C, Vcc=±15 V, Cf=5 pF (built-in), RL=1 MΩ] S8746-01 +111 MΩ (External connected) 103 Current-to-voltage conversion gain (MΩ) Current-to-voltage conversion gain (MΩ) S8745-01 +11 MΩ (External connected) 102 101 100 +1 MΩ (External connected) 10-1 10-2 0.01 0.1 1 10 +111 MΩ (External connected) 103 +11 MΩ (External connected) 102 101 100 +1 MΩ (External connected) 10-1 10-2 0.01 100 0.1 1 Frequency (kHz) 10 100 Frequency (kHz) KSPDB0233EA KSPDB0234EA The current-to-voltage conversion gain can be varied by connecting an external feedback resistor between pins 4 and 6 for the S874501, and between pins 9 and 12 for the S8746-01 [Figure 5]. Figure 2 shows the frequency response characteristics of the S8745-01 and S8746-01 with or without an externally connected feedback resistor. Because the S8745-01 and S8746-01 have a built-in resistor of 1 GΩ, for example the total feedback resistance will be converted to 100 MΩ by externally connecting a resistor of 111 MΩ. Choose the desired constant according to the incident light level to be detected. Note: If the external feedback resistor is 1 MΩ or less, gain peaking may occur in the frequency response. Therefore, be sure to connect a matched feedback capacitor for phase compensation. [Figure 3] Output noise voltage vs. frequency S8745-01 [Typ. Ta=25 °C, Vcc=±15 V, Cf=5 pF (built-in), RL=1 MΩ, dark state] S8745-01 +111 MΩ (External connected) 10 +11 MΩ (External connected) 1 0.1 +1 MΩ (External connected) 0.01 0.001 0.01 0.1 1 10 100 100 Output noise voltage (µV rms/Hz1/2) Output noise voltage (µV rms/Hz1/2) 100 S8746-01 1000 Frequency (kHz) [Typ. Ta=25 °C, Vcc=±15 V, Cf=5 pF (built-in), RL=1 MΩ, dark state] S8746-01 +111 MΩ (External connected) 10 1 0.1 0.01 0.001 +1 MΩ (External connected) +11 MΩ (External connected) 0.01 0.1 1 10 100 1000 Frequency (kHz) KSPDB0235EA KSPDB0236EA 3 S8745-01, S8746-01 Si photodiodes with preamp Output noise voltage and NEP (noise equivalent power) characteristics allow you to check whether the device can detect the low-level light you want to measure. Since NEP is given by the equation (1) as shown at the right, NEP at wavelengths other than λp can be easily calculated from Figure 1 and Figures 4. Note: When the S8745-01 and S8746-01 are used only with the internal current-to-voltage gain, it is recommended that the "-IN" lead (pin 6 for the S8745-01; pin 9 for the S8746-01) be cut off to a short length in order to reduce the influence of external noise as much as possible. NEP(f,λ)= Vn(f) Gl-V(f) ∙ Ssi(λ) = NEP(f, λp) ∙ S(λp) … (1) S(λ) NEP(f, λ) : NEP at frequency and wavelength to be detected NEP(f, λp): NEP at peak wavelength [Figure 4] GI-V(f) : Current-to-voltage conversion gain [Figure 2] Ssi(λ) : Sensitivity of Si photodiode S(λ) : Sensitivity of S8745-01 and S8746-01 [Figure 1] S(λp) : Sensitivity of S8745-01 and S8746-01 at peak wavelength, 0.5 V/nW Vn(f) : Output noise voltage [Figure 3] [Figure 4] NEP vs. frequency S8745-01 [Typ. Ta=25 °C, Vcc=±15 V, Cf=5 pF (built-in), RL=1 MΩ, dark state, λ=λp] +1 MΩ (External connected) NEP (fW/Hz1/2) 105 104 [Typ. Ta=25 °C, Vcc=±15 V, Cf=5 pF (built-in), RL=1 MΩ, dark state, λ=λp] +1 MΩ (External connected) 105 +11 MΩ (External connected) +111 MΩ (External connected) 103 102 101 0.001 106 NEP (fW/Hz1/2) 106 S8746-01 +11 MΩ (External connected) 104 +111 MΩ (External connected) 103 102 S8746-01 S8745-01 0.01 0.1 1 10 100 1000 Frequency (kHz) 101 0.001 0.01 0.1 1 10 100 1000 Frequency (kHz) KSPDB0237EA KSPDB0238EA 4 S8745-01, S8746-01 Si photodiodes with preamp [Figure 5] Application circuit examples S8745-01 Vcc+ Rf (External connected) 0.1 µF TO-5 Package Rf=1 GΩ (Built-in) Cf=5 pF (Built-in) Photodiode Window (Quartz) + RL RL is the input impedance to the next-stage circuit when viewed from the OUT terminal. 0.1 µF NC VccKSPDC0048EA S8746-01 Vcc+ Rf (External connected) 0.1 µF To-8 Package Rf=1 GΩ (Built-in) Cf=5 pF (Built-in) Photodiode Window (Quartz) + RL RL is the input impedance to the next-stage circuit when viewed from the OUT terminal. 0.1 µF NC VccKSPDC0049EA 5 Si photodiodes with preamp S8745-01, S8746-01 The S8745-01 and S8746-01 use a package with the guard ring effect provided. To make it effective during measurement, the package leads (pin 5 for the S8745-01; pins 5 and 11 for the S8746-01) should be connected to the ground line. When a feedback resistor is externally connected, it is necessary to provide a guard ring on the circuit board or to provide a teflon standoff for the leads. Note: A tantalum or ceramic capacitor of 0.1 to 10 μF must be connected to the supply voltage leads (pins 3 and 9 for the S8745-01; pins 1 and 4 for the S8746-01) as a bypass capacitor used to prevent the device from oscillation. [Figure 6] Dimensional outlines (unit: mm) 15.2 ± 0.3 8.2 ± 0.1 14.0 ± 0.2 Window 10.0 ± 0.2 6.4 ± 0.2 9.15 ± 0.2 1.2 max. (13.5) NC NC Vcc+ OUT CASE -IN NC +IN VccGND 10.16 ± 0.2 5.84 ± 0.2 0.45 Lead 5.08 ± 0.2 0.45 Lead Photosensitive surface (20) 0.5 max. Photosensitive surface 3.45 4.7 Window 3.0 ± 0.1 (2) S8746-01 5.1 ± 0.2 (1) S8745-01 Vcc+ NC NC VccCASE +IN NC NC -IN GND CASE OUT 5.08 ± 0.2 Bottom view 10.16 ± 0.2 KSPDA0158EA Bottom View KSPDA0159EA 6 Si photodiodes with preamp S8745-01, S8746-01 Precautions ESD The S8745-01 and S8746-01 may be damaged or their performance may deteriorate by such factors as electro static discharge from the human body, surge voltages from measurement equipment, leakage voltages from soldering irons and packing materials. As a countermeasure against electro static discharge, the device, operator, work place and measuring jigs must all be set at the same potential. The following precautions must be observed during use: ∙ To protect the device from electro static discharge which accumulate on the operator or the operator's clothes, use a wrist strap or similar tools to ground the operator's body via a high impedance resistor (1 MΩ). ∙ A semiconductive sheet (1 MΩ to 100 MΩ) should be laid on both the work table and the floor in the work area. ∙ When soldering, use an electrically grounded soldering iron with an isolation resistance of more than 10 MΩ. ∙ For containers and packing, use of a conductive material or aluminum foil is effective. When using an antistatic material, use one with a resistance of 0.1 MΩ/cm2 to 1 GΩ/cm2. Wiring If electric current or voltage is applied in reverse polarity to an electronic device such as a preamplifier, this can degrade device performance or destroy the device. Always check the wiring and dimensional outline to avoid misconnection. Against UV light exposure ∙ When UV light irradiation is applied, the product characteristics may degrade. Such examples include degradation of the product’s UV sensitivity and increase in dark current. This phenomenon varies depending on the irradiation level, irradiation intensity, usage time, and ambient environment and also varies depending on the product model. Before employing the product, we recommend that you check the tolerance under the ultraviolet light environment that the product will be used in. ∙ Exposure to UV light may cause the characteristics to degrade due to gas released from the resin bonding the product’s component materials. As such, we recommend that you avoid applying UV light directly on the resin and apply it on only the inside of the photosensitive area by using an aperture or the like. Related information http://www.hamamatsu.com/sp/ssd/doc_en.html Precautions ∙ Disclaimer ∙ Metal, ceramic, plastic package products Technical information ∙ Si photodiode / Application circuit examples Information described in this material is current as of October, 2015. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J. 08807, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741 China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Cat. No. KSPD1065E04 Oct. 2015 DN 7