s8745-01 etc kspd1065e

Si photodiodes with preamp
S8745-01
S8746-01
Photodiode and preamp integrated with
feedback resistance and capacitance
The S8745-01 and S8746-01 are low-noise sensors consisting of Si photodiode, op amp, and feedback resistance and capacitance, all integrated into a small package. By simply connecting to a power supply, the S8745-01 and S8746-01 can be
used in low-light-level measurement such as analytical equipment and measurement equipment. The photosensitive area
of the photodiode is internally connected to the GND terminal making it highly resistant to EMC noise.
Features
Applications
Si photodiode for UV to near IR precision photometry
Spectrophotometry
Small metal package with quartz window
S8745-01: TO-5
S8746-01: TO-8
General-purpose optical measurement
Photosensitive area
S8745-01: 2.4 × 2.4 mm
S8746-01: 5.8 × 5.8 mm
FET input operational amplifier with low power
dissipation
Built-in Rf=1 GΩ and Cf=5 pF
Variable gain with an externally connected resistor
Low noise and NEP
Package with shielding effect
Resistant to EMC noise
The S8745-01 and S8746-01 may be damaged by electro static discharge, etc. Please see precautions in the last page.
Absolute maximum ratings (Ta=25 °C)
Parameter
Supply voltage (op amp)
Power dissipation
Operating temperature
Storage temperature
Symbol
Vcc
P
Topr
Tstg
Value
±20
500
-20 to +60
-30 to +80
Unit
V
mW
°C
°C
Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the
product within the absolute maximum ratings.
www.hamamatsu.com
1
Si photodiodes with preamp
S8745-01, S8746-01
Electrical and optical characteristics (Typ. Ta=25 °C, Vcc=±15 V, RL=1 MΩ, unless otherwise noted)
Parameter
Spectral response range
Peak sensitivity wavelength
Feedback resistance (built-in)
Feedback capacitance (built-in)
Symbol
λ
λp
Rf
Cf
Photosensitivity
S
Output noise voltage
Vn
Noise equivalent power
NEP
Output offset voltage
Cutoff frequency
Output voltage swing
Supply current
Vos
fc
Vo
Icc
Condition
λ=200 nm
λ=λp
Dark state, f=10 Hz
Dark state, f=20 Hz
λ=λp, f=10 Hz
λ=λp, f=20 Hz
Dark state
-3 dB
Dark state
S8745-01
S8746-01
190 to 1100
960
1
5
0.12
0.52
6
5
11
11
V/nW
7
6
15
15
±4
32
13
0.3
Unit
nm
nm
GΩ
pF
μV rms/Hz1/2
fW/Hz1/2
mV
Hz
V
mA
[Figure 1] Spectral response
0.6
[Typ.Ta=25 °C, Rf=1 GΩ (built-in), Cf=5 pF (built-in)]
Photosensitivity (V/nW)
0.5
0.4
0.3
0.2
0.1
0
190
400
600
800
1000
1200
Wavelength (nm)
KSPDB0232EA
The built-in feedback resistance and capacitance of the S8745-01 and S8746-01 are 1 GΩ and 5 pF, respectively. This combination provides a sensitivity of about 0.1 to 0.5 V/nW in the wavelength range of 190 to 1100 nm.
2
S8745-01, S8746-01
Si photodiodes with preamp
[Figure 2] Gain-frequency characteristics
S8745-01
104
S8746-01
[Typ. Ta=25 °C, Vcc=±15 V, Cf=5 pF (built-in), RL=1 MΩ]
104
[Typ. Ta=25 °C, Vcc=±15 V, Cf=5 pF (built-in), RL=1 MΩ]
S8746-01
+111 MΩ
(External connected)
103
Current-to-voltage conversion gain (MΩ)
Current-to-voltage conversion gain (MΩ)
S8745-01
+11 MΩ
(External
connected)
102
101
100
+1 MΩ
(External connected)
10-1
10-2
0.01
0.1
1
10
+111 MΩ
(External connected)
103
+11 MΩ
(External
connected)
102
101
100
+1 MΩ
(External connected)
10-1
10-2
0.01
100
0.1
1
Frequency (kHz)
10
100
Frequency (kHz)
KSPDB0233EA
KSPDB0234EA
The current-to-voltage conversion gain can be varied by connecting an external feedback resistor between pins 4 and 6 for the S874501, and between pins 9 and 12 for the S8746-01 [Figure 5]. Figure 2 shows the frequency response characteristics of the S8745-01 and
S8746-01 with or without an externally connected feedback resistor. Because the S8745-01 and S8746-01 have a built-in resistor of 1
GΩ, for example the total feedback resistance will be converted to 100 MΩ by externally connecting a resistor of 111 MΩ. Choose the
desired constant according to the incident light level to be detected.
Note: If the external feedback resistor is 1 MΩ or less, gain peaking may occur in the frequency response. Therefore, be sure to
connect a matched feedback capacitor for phase compensation.
[Figure 3] Output noise voltage vs. frequency
S8745-01
[Typ. Ta=25 °C, Vcc=±15 V, Cf=5 pF (built-in), RL=1 MΩ, dark state]
S8745-01
+111 MΩ
(External connected)
10
+11 MΩ
(External connected)
1
0.1
+1 MΩ
(External connected)
0.01
0.001
0.01
0.1
1
10
100
100
Output noise voltage (µV rms/Hz1/2)
Output noise voltage (µV rms/Hz1/2)
100
S8746-01
1000
Frequency (kHz)
[Typ. Ta=25 °C, Vcc=±15 V, Cf=5 pF (built-in), RL=1 MΩ, dark state]
S8746-01
+111 MΩ
(External connected)
10
1
0.1
0.01
0.001
+1 MΩ
(External
connected)
+11 MΩ
(External
connected)
0.01
0.1
1
10
100
1000
Frequency (kHz)
KSPDB0235EA
KSPDB0236EA
3
S8745-01, S8746-01
Si photodiodes with preamp
Output noise voltage and NEP (noise equivalent power) characteristics allow you to check whether the device can detect the low-level
light you want to measure. Since NEP is given by the equation (1) as shown at the right, NEP at wavelengths other than λp can be
easily calculated from Figure 1 and Figures 4.
Note: When the S8745-01 and S8746-01 are used only with the internal current-to-voltage gain, it is recommended that the "-IN" lead
(pin 6 for the S8745-01; pin 9 for the S8746-01) be cut off to a short length in order to reduce the influence of external noise as
much as possible.
NEP(f,λ)=
Vn(f)
Gl-V(f) ∙ Ssi(λ)
=
NEP(f, λp) ∙ S(λp)
… (1)
S(λ)
NEP(f, λ) : NEP at frequency and wavelength to be detected
NEP(f, λp): NEP at peak wavelength [Figure 4]
GI-V(f)
: Current-to-voltage conversion gain [Figure 2]
Ssi(λ)
: Sensitivity of Si photodiode
S(λ)
: Sensitivity of S8745-01 and S8746-01 [Figure 1]
S(λp)
: Sensitivity of S8745-01 and S8746-01 at peak wavelength, 0.5 V/nW
Vn(f)
: Output noise voltage [Figure 3]
[Figure 4] NEP vs. frequency
S8745-01
[Typ. Ta=25 °C, Vcc=±15 V, Cf=5 pF (built-in), RL=1 MΩ, dark state, λ=λp]
+1 MΩ
(External connected)
NEP (fW/Hz1/2)
105
104
[Typ. Ta=25 °C, Vcc=±15 V, Cf=5 pF (built-in), RL=1 MΩ, dark state, λ=λp]
+1 MΩ
(External connected)
105
+11 MΩ
(External connected)
+111 MΩ
(External connected)
103
102
101
0.001
106
NEP (fW/Hz1/2)
106
S8746-01
+11 MΩ
(External connected)
104
+111 MΩ
(External connected)
103
102
S8746-01
S8745-01
0.01
0.1
1
10
100
1000
Frequency (kHz)
101
0.001
0.01
0.1
1
10
100
1000
Frequency (kHz)
KSPDB0237EA
KSPDB0238EA
4
S8745-01, S8746-01
Si photodiodes with preamp
[Figure 5] Application circuit examples
S8745-01
Vcc+
Rf
(External connected)
0.1 µF
TO-5
Package
Rf=1 GΩ (Built-in)
Cf=5 pF (Built-in)
Photodiode
Window
(Quartz)
+
RL
RL is the input impedance to
the next-stage circuit when
viewed from the OUT terminal.
0.1 µF
NC
VccKSPDC0048EA
S8746-01
Vcc+
Rf
(External connected)
0.1 µF
To-8
Package
Rf=1 GΩ (Built-in)
Cf=5 pF (Built-in)
Photodiode
Window
(Quartz)
+
RL
RL is the input impedance to
the next-stage circuit when
viewed from the OUT terminal.
0.1 µF
NC
VccKSPDC0049EA
5
Si photodiodes with preamp
S8745-01, S8746-01
The S8745-01 and S8746-01 use a package with the guard ring effect provided. To make it effective during measurement, the package
leads (pin 5 for the S8745-01; pins 5 and 11 for the S8746-01) should be connected to the ground line.
When a feedback resistor is externally connected, it is necessary to provide a guard ring on the circuit board or to provide a teflon
standoff for the leads.
Note: A tantalum or ceramic capacitor of 0.1 to 10 μF must be connected to the supply voltage leads (pins 3 and 9 for the S8745-01;
pins 1 and 4 for the S8746-01) as a bypass capacitor used to prevent the device from oscillation.
[Figure 6] Dimensional outlines (unit: mm)
15.2 ± 0.3
8.2 ± 0.1
14.0 ± 0.2
Window
10.0 ± 0.2
6.4 ± 0.2
9.15 ± 0.2
1.2 max.
(13.5)
NC
NC
Vcc+
OUT
CASE
-IN
NC
+IN
VccGND
10.16 ± 0.2
5.84 ± 0.2
0.45
Lead
5.08 ± 0.2
0.45
Lead
Photosensitive
surface
(20)
0.5 max.
Photosensitive
surface
3.45
4.7
Window
3.0 ± 0.1
(2) S8746-01
5.1 ± 0.2
(1) S8745-01
Vcc+
NC
NC
VccCASE
+IN
NC
NC
-IN
GND
CASE
OUT
5.08 ± 0.2
Bottom view
10.16 ± 0.2
KSPDA0158EA
Bottom View
KSPDA0159EA
6
Si photodiodes with preamp
S8745-01, S8746-01
Precautions
ESD
The S8745-01 and S8746-01 may be damaged or their performance may deteriorate by such factors as electro static discharge from
the human body, surge voltages from measurement equipment, leakage voltages from soldering irons and packing materials. As a
countermeasure against electro static discharge, the device, operator, work place and measuring jigs must all be set at the same
potential. The following precautions must be observed during use:
∙ To protect the device from electro static discharge which accumulate on the operator or the operator's clothes, use a wrist strap or
similar tools to ground the operator's body via a high impedance resistor (1 MΩ).
∙ A semiconductive sheet (1 MΩ to 100 MΩ) should be laid on both the work table and the floor in the work area.
∙ When soldering, use an electrically grounded soldering iron with an isolation resistance of more than 10 MΩ.
∙ For containers and packing, use of a conductive material or aluminum foil is effective. When using an antistatic material, use one with
a resistance of 0.1 MΩ/cm2 to 1 GΩ/cm2.
Wiring
If electric current or voltage is applied in reverse polarity to an electronic device such as a preamplifier, this can degrade device
performance or destroy the device. Always check the wiring and dimensional outline to avoid misconnection.
Against UV light exposure
∙ When UV light irradiation is applied, the product characteristics may degrade. Such examples include degradation of the product’s UV
sensitivity and increase in dark current. This phenomenon varies depending on the irradiation level, irradiation intensity, usage time,
and ambient environment and also varies depending on the product model. Before employing the product, we recommend that you
check the tolerance under the ultraviolet light environment that the product will be used in.
∙ Exposure to UV light may cause the characteristics to degrade due to gas released from the resin bonding the product’s component
materials. As such, we recommend that you avoid applying UV light directly on the resin and apply it on only the inside of the
photosensitive area by using an aperture or the like.
Related information
http://www.hamamatsu.com/sp/ssd/doc_en.html
Precautions
∙ Disclaimer
∙ Metal, ceramic, plastic package products
Technical information
∙ Si photodiode / Application circuit examples
Information described in this material is current as of October, 2015.
Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the
information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always
contact us for the delivery specification sheet to check the latest specifications.
The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that
one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use.
Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission.
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HAMAMATSU PHOTONICS K.K., Solid State Division
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Cat. No. KSPD1065E04 Oct. 2015 DN
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