PHOTODIODE Si photodiode with preamp S7998 Photodiode (3 × 3 mm)/preamplifier assembly in compact package S7998 is a UV to near IR detector using a 3 × 3 mm photodiode integrated with preamplifier. The photodiode chip and the preamplifier are assembled at high density by direct bump connections. The preamplifier bias current is so small that a high feedback resistance of 1 GΩ can be used. Built-in feedback resistance types and metal package types are also available upon request. Features Applications l Compact ceramic package: 13.2 × 7.37 mm l Uses a UV to near IR Si photodiode (3 × 3 mm) for high-precision photometry l Precision photometry l General photometry l Uses a low bias current preamplifier: Ib=64 pA Max. l Low noise l Low current consumption ■ Absolute maximum ratings (Ta=25 °C) Parameter Preamp supply voltage Photodiode reverse voltage Operating temperature Storage temperature Symbol Vcc VR Topr Tstg Value ±6 5 -20 to +60 -20 to +80 Unit V V °C °C ■ Electrical and optical characteristics of photodiode (Ta=25 °C) Parameter Spectral response range Peak sensitivity wavelength Photo sensitivity Dark current Shunt resistance Terminal capacitance Symbol l lp S ID Rsh Ct Condition l=200 nm l=lp VR=10 mV VR=10 mV VR=0 V, f=10 kHz Min. 0.1 - Typ. 190 to 1100 880 0.12 0.43 50 0.2 120 Max. 250 - Unit nm nm A/W A/W pA GW pF Typ. ±0.7 4 ±1 0.5 ±4.9 1.3 33 1.5 1.3 Max. ±5 ±64 32 1.7 Unit mV µV/°C pA pA V MHz nVrms/Hz1/2 fA/Hz1/2 mA ■ Electrical and optical characteristics of preamp (Ta=25 °C, Vcc=±5 V) Parameter Symbol Condition Input offset voltage Vos Input offset voltage temperature drift DVos Input bias current Ib Input offset current Ios Output voltage amplitude Vo RL=2 kW Gain bandwidth GBW Equivalent noise input voltage Vn f=10 kHz Equivalent noise input current In f=10 kHz Supply current Icc Min. ±4.8 - 1 Si photodiode with preamp ■ Spectral response (photodiode only) ■ Frequency response (Typ. Ta=25 ˚C) (Typ. Ta=25 ˚C) 0.7 10 Rf=100 kΩ Cf=200 pF (EXTERNALLY CONNECTED) 0 RELATIVE OUTPUT (dB) PHOTO SENSITIVITY (A/W) 0.6 0.5 0.4 0.3 0.2 Rf=10 MΩ Cf=10 pF (EXTERNALLY CONNECTED) -10 -20 -30 Rf=1 GΩ Cf=0.5 pF (EXTERNALLY CONNECTED) -40 0.1 0 190 400 600 800 1000 -50 0.01 1200 0.1 WAVELENGTH (nm) 1 10 100 1000 10000 FREQUENCY (kHz) KSPDB0191EA ■ Output noise characteristics 10 NOISE EQUIVALENT POWER NEP (fW/Hz1/2) OUTPUT NOISE DENSITY (µVrms/Hz1/2) 10 Rf=10 MΩ Cf=10 pF (EXTERNALLY CONNECTED) 1 0.1 0.001 0.01 Rf=100 kΩ Cf=200 pF (EXTERNALLY CONNECTED) (Typ. Ta=25 ˚C) 7 106 105 10 4 Rf=100 kΩ Cf=200 pF (EXTERNALLY CONNECTED) 103 102 Rf=10 MΩ, Cf=10 pF (EXTERNALLY CONNECTED) Rf=1 GΩ, Cf=0.5 pF (EXTERNALLY CONNECTED) 1 0.1 1 10 100 1000 10000 FREQUENCY (kHz) 10 0.01 0.1 1 10 100 1000 10000 FREQUENCY (kHz) KSPDB0193EA 2 KSPDB0192EA ■ Noise equivalent power vs. frequency (Typ. Ta=25 ˚C) Rf=1 GΩ Cf=0.5 pF (EXTERNALLY CONNECTED) 100 0.01 S7998 KSPDB0194EA Si photodiode with preamp ■ Dimensional outline (unit: mm) ■ Application circuit example 13.2 ± 0.2 Vcc+ 3.0 (4.02) 7.37 ± 0.2 GLASS 12.2 × 7.2 × 5.0 PREAMP 0.905 0.46 ± 0.1 2.54 ± 0.15 P 2.54 × 3 =7.62 0.89 ± 0.3 ACTIVE AREA Cf 0.1 µF Rf 7.62 ± 0.3 (SPECIFIED AT THE LEAD ROOT) (0.9) 3.0 (4.5) 0.25 ± 0.1 (2.16) (5.2) S7998 PACKAGE + RL PHOTOSENSITIVE SURFACE CATHODE SL Vcc+ OUT SD Vcc+IN -IN (PD A) 0.1 µF Vcc- KSPDA0147EA KSPDC0040EA Precautions for use ● ESD S7998 may be damaged or their performance may deteriorate by such factors as electro static discharge from the human body, surge voltages from measurement equipment, leakage voltages from soldering irons and packing materials, etc. As a countermeasure against electro static discharge, the device, operator, work place and measuring jigs must all be set at the same potential. The following precautions must be observed during use: · To protect the device from electro static discharge which accumulate on the operator or the operator's clothes, use a wrist strap or similar tools to ground the operator's body via a high impedance resistor (1 MΩ). · A semiconductive sheet (1 MΩ to 100 MΩ) should be laid on both the work table and the floor in the work area. · When soldering, use an electrically grounded soldering iron with an isolation resistance of more than 10 MΩ. · For containers and packing, use of a conductive material or aluminum foil is effective. When using an antistatic material, use one with a resistance of 0.1 MΩ/cm2 to 1 GΩ/cm2. ● Wiring If electric current or voltage is applied in reverse polarity to an electronic device such as a preamplifier, this can degrade device performance or destroy the device. Always check the wiring and dimensional outline to avoid misconnection. Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2003 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, http://www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Cat. No. KSPD1053E02 Feb. 2003 DN