PHOTODIODE Si PIN photodiode S9055 series Flat response characteristics up to high frequency bands S9055 series Si PIN photodiodes deliver a high-speed response exceeding 1 GHz at low bias voltage (VR=2 V). Their low capacitance (less than 1 pF) makes them ideal for combination with high-speed trans-impedance amplifiers. Features Applications l Optical fiber communications l High-speed measurement system l Optical inter-connection l Flat response characteristics up to high frequency bands Frequency flatness: -0.5 dB Max. (VR=2 V, λ=830 nm, f=100 MHz) l High-speed response S9055: 1.5 GHz (VR=2 V, -3 dB) S9055-01: 2 GHz (VR=2 V, -3 dB) l Low capacitance S9055: 0.8 pF (VR=2 V) S9055-01: 0.5 pF (VR=2 V) l Highly reliable package: 3-pin TO-18 package ■ General rating / absolute maximum ratings (Ta=25 °C) Parameter Active area Reverse voltage Operating temperature Storage temperature Symbol VR Max. Topr Tstg S9055 φ0.2 S9055-01 φ0.1 Unit mm V °C °C 20 -40 to +100 -55 to +125 ■ Electrical and optical characteristics (Ta=25 °C) Parameter Symbol Spectral response range Peak sensitivity wavelength Photo sensitivity Dark current Terminal capacitance λ λp S ID Ct Cut-off frequency fc Frequency flatness - Condition λ=850 nm VR=2 V VR=2 V, f=1 MHz VR=2 V, RL=25 Ω -3dB VR=2 V, λ=850 nm f=100 MHz S9055 Typ. Max. 320 to 1000 700 0.2 0.25 1 100 0.8 1.2 Min. S9055-01 Typ. Max. 320 to 1000 700 0.2 0.25 1 100 0.5 0.75 nm nm A/W pA pF Min. Unit 1.0 1.5 - 1.5 2 - GHz - - -0.5 - - -0.5 dB 1 Si PIN photodiode ■ Spectral response ■ Dark current vs. reverse voltage (Typ. Ta=25 ˚C) ■ Terminal capacitance vs. reverse voltage (Typ. Ta=25 ˚C) 100 pA S9055 series (Typ. Ta=25 ˚C) 10 pF 0.3 0.2 TERMINAL CAPACITANCE DARK CURRENT PHOTO SENSITIVITY (A/W) 0.4 10 pA 1 pA 0.1 0 200 600 400 800 100 fA 0.01 1200 1000 WAVELENGTH (nm) 1 0.1 100 10 REVERSE VOLTAGE (V) S9055 1 pF S9055-01 100 fF 0.1 1 100 10 REVERSE VOLTAGE (V) KPINB0276EB KPINB0275EB KPINB0274EA ■ Frequency characteristics λ=410 nm λ=830 nm (Typ. Ta=25 ˚C, VR=2 V, RL=25 Ω) 5 (Typ. Ta=25 ˚C, VR=2 V, RL=25 Ω) 5 S9055-01 RELATIVE OUTPUT (dB) RELATIVE OUTPUT (dB) S9055-01 0 -5 S9055 -10 -15 100 kHz 1 MHz 10 MHz 100 MHz 1 GHz 10 GHz 0 -5 S9055 -10 -15 100 kHz 1 MHz 10 MHz 100 MHz 1 GHz 10 GHz FREQUENCY FREQUENCY KPINB0277EB KPINB0278EB ■ Dimensional outline (unit: mm) 0.45 LEAD 3.6 ± 0.2 2.7 PHOTOSENSITIVE SURFACE 5.4 ± 0.2 4.7 ± 0.1 13.5 WINDOW 3.0 ± 0.1 2.54 ± 0.2 CASE The glass window does not extend beyond the upper edge of cap but may be recessed a maximum of 0.1 mm from the cap edge. KPINA0071EA Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2006 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 2 Cat. No. KPIN1065E04 Apr. 2006 DN