PHOTODIODE Si APD S4402 φ1 mm quadrant APD Features Applications l Uniform element characteristics Quadrant format on one chip with φ1 mm active area ensures uniform characteristics between elements. l Single power supply operation Allows easy and simple operation. l Low-light-level detection l Laser beam positioning ■ General ratings Parameter Window material Active area size Effective active area Symbol A - Value Borosilicate glass φ1 mm/4 0.17 (per 1 element) Unit mm mm2 Symbol Topr Tstg Value -20 to +60 -55 to +100 Unit °C °C ■ Absolute maximum ratings Parameter Operating temperature Storage temperature ■ Electrical and optical characteristics (Ta=25 °C) Parameter Spectral response range Peak sensitivity wavelength Photo sensitivity Quantum efficiency Breakdown voltage Temperature coefficient of VBR Dark current Symbol λ λp S QE VBR ID Cut-off frequency fc Terminal capacitance Ct Excess noise figure x Condition M=100 λ=800 nm, M=1 λ=800 nm, M=1 IR=100 µA M=100 M=100, λ=800 nm RL=50 Ω, -3 dB M=100, f=1 MHz M=50, f=10 kHz Io=10 nA Min. - Typ. 400 to 1000 800 0.5 75 150 0.65 0.4 Max. 200 2.0 Unit nm nm A/W % V V/°C nA - 310 - MHz - 8 - pF - 0.35 - - 1 Si APD ■ Spectral response S4402 ■ Dark current vs. reverse voltage (Typ. Ta=25 ˚C) 0.7 (Typ. Ta=25 ˚C) 100 nA 10 nA 0.5 DARK CURRENT PHOTO SENSITIVITY (A/W) 0.6 0.4 0.3 0.2 1 nA 100 pA 0.1 0 200 400 600 800 10 pA 1000 50 0 WAVELENGTH (nm) 100 150 200 REVERSE VOLTAGE (V) KAPDB0046EA ■ Terminal capacitance vs. reverse voltage ■ Gain vs. reverse voltage (Typ. Ta=25 ˚C, f=1 MHz) 1 nF (Typ. Ta=25 ˚C) 103 102 100 pF GAIN TERMINAL CAPACITANCE KAPDB0047EA 101 10 pF 100 1 pF -2 10 -1 10 0 1 10 10 2 3 10 10 10-1 0 50 REVERSE VOLTAGE (V) 100 150 200 REVERSE VOLTAGE (V) KAPDB0048EA ■ Cross-talk example KAPDB0049EA ■ Dimensional outline (unit: mm) (Ta=25 ˚C, λ=800 nm, M=100) 9.2 ± 0.2 0.07 1.3 8.2 ± 0.1 10 0.8 PHOTOSENSITIVE SURFACE STAND OFF 13 RELATIVE SENSITIVITY (%) WINDOW 3.0 MIN. 4.6 ± 0.2 100 1 5.8 0.1 0.07 0.45 LEAD 1 DETAILS OF ACTIVE AREA (DESIGN DIMENSION) 3.5 0 200 400 600 800 1000 1200 POSITION (µm) KAPDB0050EA CASE GND KAPDA0021EA Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2005 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, http://www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 2 Cat. No. KAPD1002E02 Mar. 2005 DN