HAMAMATSU S4402

PHOTODIODE
Si APD
S4402
φ1 mm quadrant APD
Features
Applications
l Uniform element characteristics
Quadrant format on one chip with φ1 mm active area
ensures uniform characteristics between elements.
l Single power supply operation
Allows easy and simple operation.
l Low-light-level detection
l Laser beam positioning
■ General ratings
Parameter
Window material
Active area size
Effective active area
Symbol
A
-
Value
Borosilicate glass
φ1 mm/4
0.17 (per 1 element)
Unit
mm
mm2
Symbol
Topr
Tstg
Value
-20 to +60
-55 to +100
Unit
°C
°C
■ Absolute maximum ratings
Parameter
Operating temperature
Storage temperature
■ Electrical and optical characteristics (Ta=25 °C)
Parameter
Spectral response range
Peak sensitivity wavelength
Photo sensitivity
Quantum efficiency
Breakdown voltage
Temperature coefficient of VBR
Dark current
Symbol
λ
λp
S
QE
VBR
ID
Cut-off frequency
fc
Terminal capacitance
Ct
Excess noise figure
x
Condition
M=100
λ=800 nm, M=1
λ=800 nm, M=1
IR=100 µA
M=100
M=100, λ=800 nm
RL=50 Ω, -3 dB
M=100, f=1 MHz
M=50, f=10 kHz
Io=10 nA
Min.
-
Typ.
400 to 1000
800
0.5
75
150
0.65
0.4
Max.
200
2.0
Unit
nm
nm
A/W
%
V
V/°C
nA
-
310
-
MHz
-
8
-
pF
-
0.35
-
-
1
Si APD
■ Spectral response
S4402
■ Dark current vs. reverse voltage
(Typ. Ta=25 ˚C)
0.7
(Typ. Ta=25 ˚C)
100 nA
10 nA
0.5
DARK CURRENT
PHOTO SENSITIVITY (A/W)
0.6
0.4
0.3
0.2
1 nA
100 pA
0.1
0
200
400
600
800
10 pA
1000
50
0
WAVELENGTH (nm)
100
150
200
REVERSE VOLTAGE (V)
KAPDB0046EA
■ Terminal capacitance vs. reverse voltage
■ Gain vs. reverse voltage
(Typ. Ta=25 ˚C, f=1 MHz)
1 nF
(Typ. Ta=25 ˚C)
103
102
100 pF
GAIN
TERMINAL CAPACITANCE
KAPDB0047EA
101
10 pF
100
1 pF -2
10
-1
10
0
1
10
10
2
3
10
10
10-1
0
50
REVERSE VOLTAGE (V)
100
150
200
REVERSE VOLTAGE (V)
KAPDB0048EA
■ Cross-talk example
KAPDB0049EA
■ Dimensional outline (unit: mm)
(Ta=25 ˚C, λ=800 nm, M=100)
9.2 ± 0.2
0.07
1.3
8.2 ± 0.1
10
0.8
PHOTOSENSITIVE
SURFACE
STAND OFF
13
RELATIVE SENSITIVITY (%)
WINDOW
3.0 MIN.
4.6 ± 0.2
100
1
5.8
0.1
0.07
0.45
LEAD
1
DETAILS OF ACTIVE AREA
(DESIGN DIMENSION)
3.5
0
200
400
600
800
1000
1200
POSITION (µm)
KAPDB0050EA
CASE GND
KAPDA0021EA
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2005 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
2
Cat. No. KAPD1002E02
Mar. 2005 DN