IR-enhanced Si PIN photodiodes S11499 series Large area, enhanced near IR sensitivity, using a MEMS technology HAMAMATSU has developed various types of Si detectors that offer enhanced near-infrared sensitivity due to a MEMS structure formed on the back side of the photodiode. The S11499 series is a family of Si PIN photodiodes with drastically improved sensitivity in the near infrared region at wavelengths longer than 900 nm. Compared to our conventional product, the S11499 series has much higher sensitivity to YAG laser light (1.06 μm). It also offers improved temperature characteristics of sensitivity at wavelengths longer than 950 nm. Features Applications High sensitivity: 0.6 A/W (λ=1060 nm) YAG laser monitor Large active area: φ5.0 mm (S11499-01) High reliability package: TO-5/TO-8 metal package Structure Parameter Package Window material Photosensitive area Effective photosensitive area S11499 TO-5 S11499-01 TO-8 Unit mm mm2 Borosilicate glass φ3.0 7.0 φ5.0 19.6 Absolute maximum ratings Parameter Reverse voltage Operating temperature Storage temperature Symbol Condition VR max. Ta=25 °C Topr Tstg S11499 S11499-01 Unit V °C °C 30 -40 to +100 -55 to +125 Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. Electrical and optical characteristics (Ta=25 °C) Parameter Symbol Spectral response range Peak sensitivity wavelength Photosensitivity Short circuit current Dark current λ λp S Isc ID Cutoff frequency fc Terminal capacitance Ct Condition λ=1060 nm 100 lx VR=20 V VR=20 V, -3 dB, RL=50 Ω, λ=830 nm VR=20 V, f=1 MHz Min. 0.54 6.0 - S11499 Typ. 360 to 1140 1000 0.6 7.8 0.05 Max. 5 Min. 0.54 15 - S11499-01 Typ. 360 to 1140 1000 0.6 21 0.1 Max. 10 nm nm A/W μA nA - 30 - - 15 - MHz - 13 - - 33 - pF www.hamamatsu.com Unit 1 Si PIN photodiodes S11499 series Spectral response Photosensitivity temperature characteristics (Typ. Ta=25 °C) Photosensitivity (A/W) QE=100% 0.6 0.4 Conventional type 0.2 (Typ.) 1.5 Temperature coefficient (%/°C) 0.8 S11499 series 0 300 400 500 600 700 800 900 1000 1100 1200 1.0 Conventional type 0.5 0 S11499 series -0.5 -1.0 600 Wavelength (nm) 700 800 900 1000 Wavelength (nm) KPINB0368EB KPINB0369EB Dark current vs. reverse voltage Terminal capacitance vs. reverse voltage (Typ. Ta=25 °C) 10 nA (Typ. Ta=25 °C, f=1 MHz) 1 nF S11499-01 100 pA S11499 10 pA 0.1 1 10 100 Reverse voltage (V) Terminal capacitance Dark current 1 nA 1 pA 0.01 1100 S11499-01 100 pF S11499 10 pF 1 pF 0.1 1 10 100 Reverse voltage (V) KPINB0370EA KPINB0371EA 2 Si PIN photodiodes S11499 series Dimensional outlines (unit: mm) S11499 Photosensitive area 3.0 13.9 ± 0.2 10.5 ± 0.1 X 9.1 ± 0.2 X 12.35 ± 0.1 5.9 ± 0.1 Y 8.1 ± 0.1 Y S11499-01 Glass Photosensitive surface 4.2 ± 0.2 Glass (15) 0.5 max. 0.45 Lead (20) 0.4 max. 2.8 2.5 Photosensitive surface 5.0 ± 0.2 Photosensitive area 5.0 0.45 Lead 5.08 ± 0.25 7.5 ± 0.2 Index mark ( 1.4) 1.5 max. Distance from photosensitive area center to cap center -0.3≤X≤+0.3 -0.3≤Y≤+0.3 1.0 max. Case The glass window may extend a maximum of 0.15 mm above the upper surface of the cap. KPINA0116EA Distance from photosensitive area center to cap center -0.4≤X≤+0.4 -0.4≤Y≤+0.4 Case The glass window may extend a maximum of 0.2 mm above the upper surface of the cap. KPINA0117EA Information described in this material is current as of June 2016. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J. 08807, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741 China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Cat. No. KPIN1082E04 Jun. 2016 DN 3