s11499 series kpin1082e

IR-enhanced Si PIN photodiodes
S11499 series
Large area, enhanced near IR sensitivity,
using a MEMS technology
HAMAMATSU has developed various types of Si detectors that offer enhanced near-infrared sensitivity due to a MEMS structure formed on the back side of the photodiode. The S11499 series is a family of Si PIN photodiodes with drastically improved sensitivity in the near infrared region at wavelengths longer than 900 nm. Compared to our conventional product, the
S11499 series has much higher sensitivity to YAG laser light (1.06 μm). It also offers improved temperature characteristics
of sensitivity at wavelengths longer than 950 nm.
Features
Applications
High sensitivity: 0.6 A/W (λ=1060 nm)
YAG laser monitor
Large active area: φ5.0 mm (S11499-01)
High reliability package: TO-5/TO-8 metal package
Structure
Parameter
Package
Window material
Photosensitive area
Effective photosensitive area
S11499
TO-5
S11499-01
TO-8
Unit
mm
mm2
Borosilicate glass
φ3.0
7.0
φ5.0
19.6
Absolute maximum ratings
Parameter
Reverse voltage
Operating temperature
Storage temperature
Symbol
Condition
VR max. Ta=25 °C
Topr
Tstg
S11499
S11499-01
Unit
V
°C
°C
30
-40 to +100
-55 to +125
Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the
product within the absolute maximum ratings.
Electrical and optical characteristics (Ta=25 °C)
Parameter
Symbol
Spectral response range
Peak sensitivity wavelength
Photosensitivity
Short circuit current
Dark current
λ
λp
S
Isc
ID
Cutoff frequency
fc
Terminal capacitance
Ct
Condition
λ=1060 nm
100 lx
VR=20 V
VR=20 V, -3 dB,
RL=50 Ω, λ=830 nm
VR=20 V, f=1 MHz
Min.
0.54
6.0
-
S11499
Typ.
360 to 1140
1000
0.6
7.8
0.05
Max.
5
Min.
0.54
15
-
S11499-01
Typ.
360 to 1140
1000
0.6
21
0.1
Max.
10
nm
nm
A/W
μA
nA
-
30
-
-
15
-
MHz
-
13
-
-
33
-
pF
www.hamamatsu.com
Unit
1
Si PIN photodiodes
S11499 series
Spectral response
Photosensitivity temperature characteristics
(Typ. Ta=25 °C)
Photosensitivity (A/W)
QE=100%
0.6
0.4
Conventional type
0.2
(Typ.)
1.5
Temperature coefficient (%/°C)
0.8
S11499 series
0
300 400 500 600 700 800 900 1000 1100 1200
1.0
Conventional type
0.5
0
S11499 series
-0.5
-1.0
600
Wavelength (nm)
700
800
900
1000
Wavelength (nm)
KPINB0368EB
KPINB0369EB
Dark current vs. reverse voltage
Terminal capacitance vs. reverse voltage
(Typ. Ta=25 °C)
10 nA
(Typ. Ta=25 °C, f=1 MHz)
1 nF
S11499-01
100 pA
S11499
10 pA
0.1
1
10
100
Reverse voltage (V)
Terminal capacitance
Dark current
1 nA
1 pA
0.01
1100
S11499-01
100 pF
S11499
10 pF
1 pF
0.1
1
10
100
Reverse voltage (V)
KPINB0370EA
KPINB0371EA
2
Si PIN photodiodes
S11499 series
Dimensional outlines (unit: mm)
S11499
Photosensitive area
3.0
13.9 ± 0.2
10.5 ± 0.1
X
9.1 ± 0.2
X
12.35 ± 0.1
5.9 ± 0.1
Y
8.1 ± 0.1
Y
S11499-01
Glass
Photosensitive surface
4.2 ± 0.2
Glass
(15)
0.5 max.
0.45
Lead
(20)
0.4 max.
2.8
2.5
Photosensitive surface
5.0 ± 0.2
Photosensitive area
5.0
0.45
Lead
5.08 ± 0.25
7.5 ± 0.2
Index mark ( 1.4)
1.5 max.
Distance from photosensitive
area center to cap center
-0.3≤X≤+0.3
-0.3≤Y≤+0.3
1.0 max.
Case
The glass window may extend
a maximum of 0.15 mm above
the upper surface of the cap.
KPINA0116EA
Distance from photosensitive
area center to cap center
-0.4≤X≤+0.4
-0.4≤Y≤+0.4
Case
The glass window may extend
a maximum of 0.2 mm above
the upper surface of the cap.
KPINA0117EA
Information described in this material is current as of June 2016.
Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the
information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always
contact us for the delivery specification sheet to check the latest specifications.
The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that
one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use.
Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission.
www.hamamatsu.com
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J. 08807, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741
China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866
Cat. No. KPIN1082E04 Jun. 2016 DN
3