s10355-01 etc kspd1075e

Si photodiodes
S10355-01
S10356-01
Back-illuminated type photodiodes employing
CSP structure
The S10355-01 and S10356-01 are back-illuminated type photodiodes designed to minimize the dead areas at the device
edges by using a CSP (chip size package) structure. The CSP also allows using multiple devices in a tiled format.
Features
Applications
Allows multiple devices to be arranged in a tiled format
Tiled format minimizes the dead area between photodiodes and covers a large detection area.
General industrial mesurement
X-ray inspection system
Patterned electrodes for signal readout terminals
Lead pins and solder balls are available as signal readout terminals on the underside of the package.
Please contact us for details.
Easy coupling to scintillator
Maximizes the optical coupling efficiency to a scintillator since no wire leads exist on the photosensitive
surface, making these photodiodes ideal as detectors
for X-ray non-destructive inspection systems.
Structure
Parameter
Package size
Chip size
Photosensitive area
S10355-01
7.52 × 7.52
7.37 × 7.37
6.97 × 6.97
S10356-01
3×3
2.8 × 2.8
2.5 × 2.5
Unit
mm
mm
mm
Absolute maximum ratings
Parameter
Reverse voltage
Operating temperature
Storage temperature
Reflow soldering condition*
Symbol
Condition
VR max Ta=25 °C
Topr
Tstg
Tsol
Value
10
-20 to +60
-20 to +80
Peak temperature 240 °C (see page 3)
Unit
V
°C
°C
-
Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the
product within the absolute maximum ratings.
* JEDEC level 5a
Electrical and optical characteristics (Ta=25 °C)
Parameter
Symbol
Spectral response range
Peak sensitivity wavelength
λ
λp
Photo sensitivity
S
Short circuit current
Dark current
Isc
ID
Rise time
tr
Terminal capacitance
Ct
Condition
λ=960 nm
λ=540 nm
100 lx, 2856 K
VR=10 mV
VR=0 V, RL=1 kΩ
λ=650 nm
VR=0 V, f=10 kHz
S10355-01
Typ.
Max.
400 to 1100
960
0.55
0.59
0.35
0.37
30
40
0.1
1
Min.
S10356-01
Typ.
Max.
400 to 1100
960
0.55
0.59
0.35
0.37
4
5
0.01
0.3
Min.
Unit
nm
nm
A/W
A/W
μA
nA
-
20
-
-
15
-
μs
-
500
700
-
60
90
pF
www.hamamatsu.com
1
Si photodiodes
S10355-01, S10356-01
Spectral response
Sensitivity uniformity (S10356-01)
(Ta=25 °C, λ=690 nm, spot light size 20 µm, VR=0 V)
0.7
100
Relative sensitivity (%)
0.5
0.4
0.3
0.2
0
400
80
60
40
20
0.1
0
500
600
700
800
900
1000
0
1100
1000
Wavelength (nm)
2000
Position on photosensitive area (µm)
KSPDB0288ED
KSPDB0294EA
Dimensional outlines (unit: mm)
S10355-01
7.52 ± 0.1
Glass epoxy
(0.25)
1.0 ± 0.2
0.15
Photosensitive
surface
7.52 ± 0.1
Photosensitive area
(7.37)
(7.37)
(0.1)
P3.085 × 2=6.17
P3.085 × 2=6.17
Photosensitivity (A/W)
0.6
(8 ×) 1.0
(Au pattern)
Cathode
Anode
KSPDA0206EA
2
Si photodiodes
S10355-01, S10356-01
S10356-01
3.0 ± 0.1
(2.8)
3.0 ± 0.1
Photosensitive area
(2.8)
0.5 ± 0.15
(0.1)
0.15
(0.25)
Photosensitive
surface
Glass epoxy
(8 ×) 0.6
P1.1 × 2 = 2.2
(8 ×) 0.6
(Au pattern)
0.1
P1.1 × 2 = 2.2
Cathode
Anode
KSPDA0175ED
Example of measured temperature profile with our hot-air reflow oven for product testing
These products support lead-free soldering. After unpacking, store them in an environment at a temperature of 30 °C or less and a
humidity of 60% or less, and perform soldering within 24 hours.
300 °C
240 °C max.
Temperature
220 °C
190 °C
170 °C
Soldering
40 s max.
Preheat
70 to 90 s
Time
KPICB0171EA
3
Si photodiodes
S10355-01, S10356-01
Related information
www.hamamatsu.com/sp/ssd/doc_en.html
Precautions
∙ Notice
∙ Surface mount type products / Precautions
Technical information
∙ Si photodiode / Application circuit examples
Information described in this material is current as of December, 2013.
Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the
information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always
contact us for the delivery specification sheet to check the latest specifications.
Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or
a suffix "(Z)" which means developmental specifications.
The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that
one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product
use.
Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission.
www.hamamatsu.com
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J. 08807, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741
China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866
Cat. No. KSPD1075E09 Dec. 2013 DN
4