Si photodiodes S10355-01 S10356-01 Back-illuminated type photodiodes employing CSP structure The S10355-01 and S10356-01 are back-illuminated type photodiodes designed to minimize the dead areas at the device edges by using a CSP (chip size package) structure. The CSP also allows using multiple devices in a tiled format. Features Applications Allows multiple devices to be arranged in a tiled format Tiled format minimizes the dead area between photodiodes and covers a large detection area. General industrial mesurement X-ray inspection system Patterned electrodes for signal readout terminals Lead pins and solder balls are available as signal readout terminals on the underside of the package. Please contact us for details. Easy coupling to scintillator Maximizes the optical coupling efficiency to a scintillator since no wire leads exist on the photosensitive surface, making these photodiodes ideal as detectors for X-ray non-destructive inspection systems. Structure Parameter Package size Chip size Photosensitive area S10355-01 7.52 × 7.52 7.37 × 7.37 6.97 × 6.97 S10356-01 3×3 2.8 × 2.8 2.5 × 2.5 Unit mm mm mm Absolute maximum ratings Parameter Reverse voltage Operating temperature Storage temperature Reflow soldering condition* Symbol Condition VR max Ta=25 °C Topr Tstg Tsol Value 10 -20 to +60 -20 to +80 Peak temperature 240 °C (see page 3) Unit V °C °C - Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. * JEDEC level 5a Electrical and optical characteristics (Ta=25 °C) Parameter Symbol Spectral response range Peak sensitivity wavelength λ λp Photo sensitivity S Short circuit current Dark current Isc ID Rise time tr Terminal capacitance Ct Condition λ=960 nm λ=540 nm 100 lx, 2856 K VR=10 mV VR=0 V, RL=1 kΩ λ=650 nm VR=0 V, f=10 kHz S10355-01 Typ. Max. 400 to 1100 960 0.55 0.59 0.35 0.37 30 40 0.1 1 Min. S10356-01 Typ. Max. 400 to 1100 960 0.55 0.59 0.35 0.37 4 5 0.01 0.3 Min. Unit nm nm A/W A/W μA nA - 20 - - 15 - μs - 500 700 - 60 90 pF www.hamamatsu.com 1 Si photodiodes S10355-01, S10356-01 Spectral response Sensitivity uniformity (S10356-01) (Ta=25 °C, λ=690 nm, spot light size 20 µm, VR=0 V) 0.7 100 Relative sensitivity (%) 0.5 0.4 0.3 0.2 0 400 80 60 40 20 0.1 0 500 600 700 800 900 1000 0 1100 1000 Wavelength (nm) 2000 Position on photosensitive area (µm) KSPDB0288ED KSPDB0294EA Dimensional outlines (unit: mm) S10355-01 7.52 ± 0.1 Glass epoxy (0.25) 1.0 ± 0.2 0.15 Photosensitive surface 7.52 ± 0.1 Photosensitive area (7.37) (7.37) (0.1) P3.085 × 2=6.17 P3.085 × 2=6.17 Photosensitivity (A/W) 0.6 (8 ×) 1.0 (Au pattern) Cathode Anode KSPDA0206EA 2 Si photodiodes S10355-01, S10356-01 S10356-01 3.0 ± 0.1 (2.8) 3.0 ± 0.1 Photosensitive area (2.8) 0.5 ± 0.15 (0.1) 0.15 (0.25) Photosensitive surface Glass epoxy (8 ×) 0.6 P1.1 × 2 = 2.2 (8 ×) 0.6 (Au pattern) 0.1 P1.1 × 2 = 2.2 Cathode Anode KSPDA0175ED Example of measured temperature profile with our hot-air reflow oven for product testing These products support lead-free soldering. After unpacking, store them in an environment at a temperature of 30 °C or less and a humidity of 60% or less, and perform soldering within 24 hours. 300 °C 240 °C max. Temperature 220 °C 190 °C 170 °C Soldering 40 s max. Preheat 70 to 90 s Time KPICB0171EA 3 Si photodiodes S10355-01, S10356-01 Related information www.hamamatsu.com/sp/ssd/doc_en.html Precautions ∙ Notice ∙ Surface mount type products / Precautions Technical information ∙ Si photodiode / Application circuit examples Information described in this material is current as of December, 2013. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or a suffix "(Z)" which means developmental specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J. 08807, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741 China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Cat. No. KSPD1075E09 Dec. 2013 DN 4