s12028 kpin1083e

IR-enhanced Si PIN photodiode
S12028
Enhanced near IR sensitivity, using a MEMS
techonology
The S12028 is Si PIN photodiode that offers enhanced near infrared sensitivity due to a MEMS structure formed on the backside of
the photodiode. The S12028 offers significantly higher sensitivity than our previous product (S5821).
Features
Applications
High sensitivity in near infrared range: 0.5 A/W (λ=1060 nm)
Analytical instruments
Photosensitive area: φ1.2 mm
NOx detection
High reliability package : 2-pin TO-18
YAG laser monitor
Structure
Parameter
Photosensitive area
Package
Window material
Specification
φ1.2
TO-18
Borosilicate glass
Unit
mm
-
Absolute maximum ratings
Parameter
Reverse voltage
Operating temperature
Storage temperature
Symbol
VR max
Topr
Tstg
Condition
Ta=25 °C
Specification
20
-40 to +100
-55 to +125
Unit
V
°C
°C
Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the
product within the absolute maximum ratings.
Electrical and optical characteristics (Ta=25 °C)
Parameter
Spectral response range
Peak sensitivity wavelength
Photosensitivity
Symbol
λ
λp
S
Short circuit current
Dark current
Isc
ID
Rise time
tr
Terminal Capacitance
Ct
Condition
λ=λp, VR=10 V
λ=1060 nm, VR=10 V
100 lx, 2856 K
VR=10 V
VR=10 V, RL=1 kΩ
λ=1060 nm
10% to 90%
VR=10 V, f=1 MHz
Min.
0.55
0.4
-
Typ.
360 to 1140
980
0.68
0.5
1.2
0.05
Max.
2
-
10
-
μs
-
4
6
pF
www.hamamatsu.com
Unit
nm
nm
A/W
μA
nA
1
Si PIN photodiode
S12028
Spectral response
Photosensitivity temperature characteristics
(Typ. Ta=25 °C, VR=10 V)
0.8
(Typ. VR=10 V)
1.5
S12028
0.6
Temperature coefficient (%/°C)
Photosensitivity (A/W)
0.7
QE=100%
0.5
0.4
0.3
S5821
0.2
1.0
S5821
S12028
0.5
0
0.1
0
200
400
1000
800
600
-0.5
300
1200
400 500 600 700
800 900 1000 1100 1200
Wavelength (nm)
Wavelength (nm)
KPINB0376EB
KPINB0377EB
Dark current vs. reverse voltage
Terminal capacitance vs. reverse voltage
(Typ. Ta=25 °C)
10 nA
Terminal capacitance
Dark current
1 nA
100 pA
(Typ. f=1 MHz)
1 nF
100 pF
10 pF
10 pA
1 pA
0.01
0.1
1
10
100
Reverse voltage (V)
1 pF
0.1
1
10
100
Reverse voltage (V)
KPINB0378EA
KPINB0379EA
2
Si PIN photodiode
S12028
5.4 ± 0.2
Y
4.7 ± 0.1
3.0 ± 0.1
Dimensional outline (unit: mm)
X
3.6 ± 0.2
Photosensitive area
1.2
(8.5)
2.8
Borosilicate glass
Photosensitive surface
ȁ0.45
Lead
1.
0
2.54 ± 0.2
1.
0
45°
Connected to case
Distance from photosensitive
area center to cap center
-0.2≤X≤+0.2
-0.2≤Y≤+0.2
The borosilicate glass window may
extend a maximum of 0.2mm
above the upper surface of the cap.
KPINA0112EA
Information described in this material is current as of October, 2012.
Product specifications are subject to change without prior notice due to improvements or other reasons. Before assembly into final products, please contact
us for the delivery specification sheet to check the latest information.
Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or
a suffix "(Z)" which means developmental specifications.
The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that
one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product
use.
Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission.
www.hamamatsu.com
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Thorshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
China: Hamamatsu Photonics (China) Co., Ltd.: 1201 Tower B, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866
Cat. No.KPIN1083E01 Oct. 2012 DN
3