IR-enhanced Si PIN photodiode S12028 Enhanced near IR sensitivity, using a MEMS techonology The S12028 is Si PIN photodiode that offers enhanced near infrared sensitivity due to a MEMS structure formed on the backside of the photodiode. The S12028 offers significantly higher sensitivity than our previous product (S5821). Features Applications High sensitivity in near infrared range: 0.5 A/W (λ=1060 nm) Analytical instruments Photosensitive area: φ1.2 mm NOx detection High reliability package : 2-pin TO-18 YAG laser monitor Structure Parameter Photosensitive area Package Window material Specification φ1.2 TO-18 Borosilicate glass Unit mm - Absolute maximum ratings Parameter Reverse voltage Operating temperature Storage temperature Symbol VR max Topr Tstg Condition Ta=25 °C Specification 20 -40 to +100 -55 to +125 Unit V °C °C Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. Electrical and optical characteristics (Ta=25 °C) Parameter Spectral response range Peak sensitivity wavelength Photosensitivity Symbol λ λp S Short circuit current Dark current Isc ID Rise time tr Terminal Capacitance Ct Condition λ=λp, VR=10 V λ=1060 nm, VR=10 V 100 lx, 2856 K VR=10 V VR=10 V, RL=1 kΩ λ=1060 nm 10% to 90% VR=10 V, f=1 MHz Min. 0.55 0.4 - Typ. 360 to 1140 980 0.68 0.5 1.2 0.05 Max. 2 - 10 - μs - 4 6 pF www.hamamatsu.com Unit nm nm A/W μA nA 1 Si PIN photodiode S12028 Spectral response Photosensitivity temperature characteristics (Typ. Ta=25 °C, VR=10 V) 0.8 (Typ. VR=10 V) 1.5 S12028 0.6 Temperature coefficient (%/°C) Photosensitivity (A/W) 0.7 QE=100% 0.5 0.4 0.3 S5821 0.2 1.0 S5821 S12028 0.5 0 0.1 0 200 400 1000 800 600 -0.5 300 1200 400 500 600 700 800 900 1000 1100 1200 Wavelength (nm) Wavelength (nm) KPINB0376EB KPINB0377EB Dark current vs. reverse voltage Terminal capacitance vs. reverse voltage (Typ. Ta=25 °C) 10 nA Terminal capacitance Dark current 1 nA 100 pA (Typ. f=1 MHz) 1 nF 100 pF 10 pF 10 pA 1 pA 0.01 0.1 1 10 100 Reverse voltage (V) 1 pF 0.1 1 10 100 Reverse voltage (V) KPINB0378EA KPINB0379EA 2 Si PIN photodiode S12028 5.4 ± 0.2 Y 4.7 ± 0.1 3.0 ± 0.1 Dimensional outline (unit: mm) X 3.6 ± 0.2 Photosensitive area 1.2 (8.5) 2.8 Borosilicate glass Photosensitive surface ȁ0.45 Lead 1. 0 2.54 ± 0.2 1. 0 45° Connected to case Distance from photosensitive area center to cap center -0.2≤X≤+0.2 -0.2≤Y≤+0.2 The borosilicate glass window may extend a maximum of 0.2mm above the upper surface of the cap. KPINA0112EA Information described in this material is current as of October, 2012. Product specifications are subject to change without prior notice due to improvements or other reasons. Before assembly into final products, please contact us for the delivery specification sheet to check the latest information. Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or a suffix "(Z)" which means developmental specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Thorshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 China: Hamamatsu Photonics (China) Co., Ltd.: 1201 Tower B, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Cat. No.KPIN1083E01 Oct. 2012 DN 3