Switching Diodes MA6X123 (MA123) Silicon epitaxial planar type Unit : mm For switching circuit 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 6 2 1 (0.65) 3 0.30+0.10 –0.05 1.1+0.2 –0.1 Rating Unit Reverse voltage (DC) VR 80 V Peak reverse voltage VRM 80 V Average forward current*1 IF 100 mA Peak forward current*1 IFM 225 mA Non-repetitive peak forward surge current*1,2 IFSM 500 mA Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 0 to 0.1 Symbol 1.1+0.3 –0.1 10° ■ Absolute Maximum Ratings Ta = 25°C Parameter 0.4±0.2 1.50+0.25 –0.05 5 2.8+0.2 –0.3 4 • Four-element contained in one package, allowing high-density mounting • Centrosymmetrical wiring, allowing to free from the taping direction • Short reverse recovery time trr • Small terminal capacitance, Ct 5° ■ Features 0.16+0.10 –0.06 1 : Anode 1 2 : Anode 2 3 : Cathode 3,4 4 : Anode 3 5 : Anode 2 6 : Cathode 1,2 Mini6-G2 Package Marking Symbol: M2B Internal Connection Note) *1 : Value for single diode *2 : t = 1 s 6 1 5 2 4 3 ■ Electrical Characteristics Ta = 25°C Parameter Symbol Conditions Min Typ Max Unit 100 nA IR VR = 75 V Forward voltage (DC) VF IF = 100 mA Reverse voltage (DC) VR IR = 100 µA Terminal capacitance Ct VR = 0 V, f = 1 MHz 2 pF trr IF = 10 mA, VR = 6 V Irr = 0.1 · IR, RL = 100 Ω 3 ns Reverse current (DC) Reverse recovery time* 1.2 80 V V Note) 1. Rated input/output frequency: 100 MHz 2. * : trr measuring circuit Bias Application Unit N-50BU Input Pulse tp tr 10% A VR Pulse Generator (PG-10N) Rs = 50 Ω W.F.Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 µs tr = 0.35 ns δ = 0.05 Output Pulse t IF trr t Irr = 0.1 · IR IF = 10 mA VR = 6 V RL = 100 Ω Note) The part number in the parenthesis shows conventional part number. 109 MA6X123 Switching Diodes IF VF IR V R 103 102 102 10 VF Ta 1.6 Ta = 150°C 100°C 10 25°C − 20°C 1 10−1 1.4 Forward voltage VF (V) Reverse current IR (µA) Forward current IF (mA) Ta = 150°C 100°C 1 10–1 25°C 1.2 1.0 IF = 100 mA 0.8 0.6 10 mA 0.4 3 mA 10–2 0.2 10−2 0 0.2 0.4 0.6 0.8 1.0 1.2 10–3 0 Forward voltage VF (V) 20 IR Ta 10−2 80 120 0 40 160 Ambient temperature Ta (°C) 200 1.0 0.5 0 20 40 60 80 120 160 200 IF(surge) tW 1.5 0 80 Ambient temperature Ta (°C) 1 000 Forward surge current IF(surge) (A) Terminal capacitance Ct (pF) Reverse current IR (µA) 10−1 40 0 −40 120 f = 1 MHz Ta = 25°C 35 V 1 0 100 Ct VR 1V 10 110 80 2.0 VR = 75 V −40 60 Reverse voltage VR (V) 102 10−3 40 100 Reverse voltage VR (V) 120 Ta = 25°C IF(surge) tW Non repetitive 300 100 30 10 3 1 0.3 0.1 0.03 0.1 0.3 1 3 Pulse width tW (ms) 10 30 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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